{"id":"https://openalex.org/W2752159144","doi":"https://doi.org/10.1587/elex.14.20170784","title":"A radiation harden enhanced Quatro (RHEQ) SRAM cell","display_name":"A radiation harden enhanced Quatro (RHEQ) SRAM cell","publication_year":2017,"publication_date":"2017-01-01","ids":{"openalex":"https://openalex.org/W2752159144","doi":"https://doi.org/10.1587/elex.14.20170784","mag":"2752159144"},"language":"en","primary_location":{"id":"doi:10.1587/elex.14.20170784","is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.14.20170784","pdf_url":"https://www.jstage.jst.go.jp/article/elex/14/18/14_14.20170784/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"diamond","oa_url":"https://www.jstage.jst.go.jp/article/elex/14/18/14_14.20170784/_pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5075966974","display_name":"Chunyu Peng","orcid":"https://orcid.org/0000-0003-2408-5048"},"institutions":[{"id":"https://openalex.org/I143868143","display_name":"Anhui University","ror":"https://ror.org/05th6yx34","country_code":"CN","type":"education","lineage":["https://openalex.org/I143868143"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Chunyu Peng","raw_affiliation_strings":["School of Electronics and Information Engineering, Anhui University"],"affiliations":[{"raw_affiliation_string":"School of Electronics and Information Engineering, Anhui University","institution_ids":["https://openalex.org/I143868143"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100324483","display_name":"Ziyang Chen","orcid":"https://orcid.org/0000-0002-2467-8372"},"institutions":[{"id":"https://openalex.org/I143868143","display_name":"Anhui University","ror":"https://ror.org/05th6yx34","country_code":"CN","type":"education","lineage":["https://openalex.org/I143868143"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Ziyang Chen","raw_affiliation_strings":["School of Electronics and Information Engineering, Anhui University"],"affiliations":[{"raw_affiliation_string":"School of Electronics and Information Engineering, Anhui University","institution_ids":["https://openalex.org/I143868143"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100636097","display_name":"Jingbo Zhang","orcid":"https://orcid.org/0000-0002-6672-2650"},"institutions":[{"id":"https://openalex.org/I890469752","display_name":"Ministry of Industry and Information Technology","ror":"https://ror.org/0385nmy68","country_code":"CN","type":"government","lineage":["https://openalex.org/I890469752"]},{"id":"https://openalex.org/I143868143","display_name":"Anhui University","ror":"https://ror.org/05th6yx34","country_code":"CN","type":"education","lineage":["https://openalex.org/I143868143"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jingbo Zhang","raw_affiliation_strings":["Industry Development and Promotion Center, Ministry of Industry and Information Technology of the Peoples Republic China","School of Electronics and Information Engineering, Anhui University"],"affiliations":[{"raw_affiliation_string":"Industry Development and Promotion Center, Ministry of Industry and Information Technology of the Peoples Republic China","institution_ids":["https://openalex.org/I890469752"]},{"raw_affiliation_string":"School of Electronics and Information Engineering, Anhui University","institution_ids":["https://openalex.org/I143868143"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5056761251","display_name":"Songsong Xiao","orcid":"https://orcid.org/0000-0003-3249-2401"},"institutions":[{"id":"https://openalex.org/I143868143","display_name":"Anhui University","ror":"https://ror.org/05th6yx34","country_code":"CN","type":"education","lineage":["https://openalex.org/I143868143"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Songsong Xiao","raw_affiliation_strings":["School of Electronics and Information Engineering, Anhui University"],"affiliations":[{"raw_affiliation_string":"School of Electronics and Information Engineering, Anhui University","institution_ids":["https://openalex.org/I143868143"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5078666701","display_name":"Changyong Liu","orcid":"https://orcid.org/0000-0003-3919-0713"},"institutions":[{"id":"https://openalex.org/I143868143","display_name":"Anhui University","ror":"https://ror.org/05th6yx34","country_code":"CN","type":"education","lineage":["https://openalex.org/I143868143"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Changyong Liu","raw_affiliation_strings":["School of Electronics and Information Engineering, Anhui University"],"affiliations":[{"raw_affiliation_string":"School of Electronics and Information Engineering, Anhui University","institution_ids":["https://openalex.org/I143868143"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5037391840","display_name":"Xiulong Wu","orcid":"https://orcid.org/0000-0002-5012-2570"},"institutions":[{"id":"https://openalex.org/I143868143","display_name":"Anhui University","ror":"https://ror.org/05th6yx34","country_code":"CN","type":"education","lineage":["https://openalex.org/I143868143"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xiulong Wu","raw_affiliation_strings":["School of Electronics and Information Engineering, Anhui University"],"affiliations":[{"raw_affiliation_string":"School of Electronics and Information Engineering, Anhui University","institution_ids":["https://openalex.org/I143868143"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5072637140","display_name":"Zhiting Lin","orcid":"https://orcid.org/0000-0002-3314-1606"},"institutions":[{"id":"https://openalex.org/I143868143","display_name":"Anhui University","ror":"https://ror.org/05th6yx34","country_code":"CN","type":"education","lineage":["https://openalex.org/I143868143"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zhiting Lin","raw_affiliation_strings":["School of Electronics and Information Engineering, Anhui University"],"affiliations":[{"raw_affiliation_string":"School of Electronics and Information Engineering, Anhui University","institution_ids":["https://openalex.org/I143868143"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":7,"corresponding_author_ids":["https://openalex.org/A5075966974"],"corresponding_institution_ids":["https://openalex.org/I143868143"],"apc_list":null,"apc_paid":null,"fwci":1.4545,"has_fulltext":true,"cited_by_count":18,"citation_normalized_percentile":{"value":0.83455335,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":"14","issue":"18","first_page":"20170784","last_page":"20170784"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11032","display_name":"VLSI and Analog Circuit Testing","score":0.9944999814033508,"subfield":{"id":"https://openalex.org/subfields/1708","display_name":"Hardware and Architecture"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9932000041007996,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/pmos-logic","display_name":"PMOS logic","score":0.9096724390983582},{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.7326245307922363},{"id":"https://openalex.org/keywords/noise-margin","display_name":"Noise margin","score":0.6985429525375366},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5974847078323364},{"id":"https://openalex.org/keywords/node","display_name":"Node (physics)","score":0.5308602452278137},{"id":"https://openalex.org/keywords/single-event-upset","display_name":"Single event upset","score":0.5046504735946655},{"id":"https://openalex.org/keywords/noise-immunity","display_name":"Noise immunity","score":0.46291664242744446},{"id":"https://openalex.org/keywords/event","display_name":"Event (particle physics)","score":0.4571191966533661},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4234354496002197},{"id":"https://openalex.org/keywords/memory-cell","display_name":"Memory cell","score":0.417660653591156},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4116396903991699},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4093918800354004},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.28800517320632935},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2529325485229492},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.2242806851863861},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.1962316632270813}],"concepts":[{"id":"https://openalex.org/C27050352","wikidata":"https://www.wikidata.org/wiki/Q173605","display_name":"PMOS logic","level":4,"score":0.9096724390983582},{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.7326245307922363},{"id":"https://openalex.org/C179499742","wikidata":"https://www.wikidata.org/wiki/Q1324892","display_name":"Noise margin","level":4,"score":0.6985429525375366},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5974847078323364},{"id":"https://openalex.org/C62611344","wikidata":"https://www.wikidata.org/wiki/Q1062658","display_name":"Node (physics)","level":2,"score":0.5308602452278137},{"id":"https://openalex.org/C2780073065","wikidata":"https://www.wikidata.org/wiki/Q1476733","display_name":"Single event upset","level":3,"score":0.5046504735946655},{"id":"https://openalex.org/C2988494973","wikidata":"https://www.wikidata.org/wiki/Q179448","display_name":"Noise immunity","level":3,"score":0.46291664242744446},{"id":"https://openalex.org/C2779662365","wikidata":"https://www.wikidata.org/wiki/Q5416694","display_name":"Event (particle physics)","level":2,"score":0.4571191966533661},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4234354496002197},{"id":"https://openalex.org/C2776638159","wikidata":"https://www.wikidata.org/wiki/Q18343761","display_name":"Memory cell","level":4,"score":0.417660653591156},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4116396903991699},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4093918800354004},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.28800517320632935},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2529325485229492},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2242806851863861},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.1962316632270813},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C66938386","wikidata":"https://www.wikidata.org/wiki/Q633538","display_name":"Structural engineering","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1587/elex.14.20170784","is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.14.20170784","pdf_url":"https://www.jstage.jst.go.jp/article/elex/14/18/14_14.20170784/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.1587/elex.14.20170784","is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.14.20170784","pdf_url":"https://www.jstage.jst.go.jp/article/elex/14/18/14_14.20170784/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"},"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.8899999856948853}],"awards":[{"id":"https://openalex.org/G2087396116","display_name":null,"funder_award_id":"China","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G3085993365","display_name":null,"funder_award_id":"(Grant No.","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G3146078022","display_name":null,"funder_award_id":"61571012","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G3317480652","display_name":null,"funder_award_id":"Science","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G4503984353","display_name":null,"funder_award_id":"61474001","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G5249178904","display_name":null,"funder_award_id":"Grant No. 6","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G5606181573","display_name":null,"funder_award_id":"61674002","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G5994120800","display_name":null,"funder_award_id":"Natural","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G7726157001","display_name":null,"funder_award_id":"Grant No.","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G936389535","display_name":null,"funder_award_id":"614740","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"}],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"}],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2752159144.pdf","grobid_xml":"https://content.openalex.org/works/W2752159144.grobid-xml"},"referenced_works_count":16,"referenced_works":["https://openalex.org/W1965462790","https://openalex.org/W1979452306","https://openalex.org/W1998173167","https://openalex.org/W2050431855","https://openalex.org/W2089197452","https://openalex.org/W2097272801","https://openalex.org/W2102290905","https://openalex.org/W2117061601","https://openalex.org/W2138815251","https://openalex.org/W2141068710","https://openalex.org/W2153751624","https://openalex.org/W2169622577","https://openalex.org/W2325687255","https://openalex.org/W2481976636","https://openalex.org/W2494978579","https://openalex.org/W2550596389"],"related_works":["https://openalex.org/W3092287005","https://openalex.org/W2407149664","https://openalex.org/W2019966534","https://openalex.org/W2164952409","https://openalex.org/W2065432247","https://openalex.org/W2037207937","https://openalex.org/W2546663484","https://openalex.org/W3005034829","https://openalex.org/W2131303554","https://openalex.org/W3025112485"],"abstract_inverted_index":{"This":[0],"paper":[1],"intends":[2],"to":[3,63,73],"present":[4],"a":[5,52],"novel":[6,49],"radiation-hardened":[7],"SRAM":[8],"cell":[9],"by":[10],"using":[11],"the":[12,26,33,40,48,74,84],"PMOS":[13,17],"transistors":[14],"stacked":[15],"(each":[16],"is":[18,61],"split":[19],"into":[20],"two":[21],"same":[22],"sizes)":[23],"and":[24],"changing":[25],"inner":[27],"topological":[28],"structure":[29,88],"on":[30],"basis":[31],"of":[32,66],"Quatro-10T.":[34],"Combined":[35],"with":[36,83],"layout-level":[37],"optimization":[38],"design,":[39],"3-D":[41],"TCAD":[42],"mixed-mode":[43],"simulation":[44],"results":[45],"show":[46],"that":[47],"design":[50],"has":[51],"great":[53],"single":[54],"event":[55],"upset":[56],"(SEU)":[57],"immune.":[58],"Simultaneously,":[59],"it":[60],"found":[62],"be":[64],"tolerant":[65],"partial":[67],"single-event":[68],"multiple-node":[69],"upsets":[70],"(SEMNUs)":[71],"due":[72],"charge":[75],"sharing":[76],"among":[77],"off-PMOS":[78],"transistors.":[79],"In":[80],"addition,":[81],"compared":[82],"Quatro-10T,":[85],"our":[86],"proposed":[87],"exhibits":[89],"larger":[90],"static":[91],"noise":[92],"margin":[93],"(SNM)":[94],"as":[95,97],"well":[96],"lower":[98],"power":[99],"consumption":[100],"in":[101],"65":[102],"nm":[103],"COMS":[104],"technology.":[105]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":2},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":4},{"year":2019,"cited_by_count":4},{"year":2018,"cited_by_count":2}],"updated_date":"2026-03-18T14:38:29.013473","created_date":"2025-10-10T00:00:00"}
