{"id":"https://openalex.org/W2739303084","doi":"https://doi.org/10.1587/elex.14.20170559","title":"A new Inter-electrode coupling capacitance extraction method for deep-submicron AlGaN/GaN HEMTs","display_name":"A new Inter-electrode coupling capacitance extraction method for deep-submicron AlGaN/GaN HEMTs","publication_year":2017,"publication_date":"2017-01-01","ids":{"openalex":"https://openalex.org/W2739303084","doi":"https://doi.org/10.1587/elex.14.20170559","mag":"2739303084"},"language":"en","primary_location":{"id":"doi:10.1587/elex.14.20170559","is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.14.20170559","pdf_url":"https://www.jstage.jst.go.jp/article/elex/14/15/14_14.20170559/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"diamond","oa_url":"https://www.jstage.jst.go.jp/article/elex/14/15/14_14.20170559/_pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5101514957","display_name":"Xiaodong Zhao","orcid":"https://orcid.org/0000-0002-2257-7631"},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Xiaodong Zhao","raw_affiliation_strings":["School of Electronic Engineering, University of Electronic Science and Technology of China"],"affiliations":[{"raw_affiliation_string":"School of Electronic Engineering, University of Electronic Science and Technology of China","institution_ids":["https://openalex.org/I150229711"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100705952","display_name":"Yuehang Xu","orcid":"https://orcid.org/0000-0003-1706-2681"},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yuehang Xu","raw_affiliation_strings":["School of Electronic Engineering, University of Electronic Science and Technology of China"],"affiliations":[{"raw_affiliation_string":"School of Electronic Engineering, University of Electronic Science and Technology of China","institution_ids":["https://openalex.org/I150229711"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5020076100","display_name":"Zhang Wen","orcid":"https://orcid.org/0000-0003-3381-8987"},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zhang Wen","raw_affiliation_strings":["School of Electronic Engineering, University of Electronic Science and Technology of China"],"affiliations":[{"raw_affiliation_string":"School of Electronic Engineering, University of Electronic Science and Technology of China","institution_ids":["https://openalex.org/I150229711"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5050889655","display_name":"Yonghao Jia","orcid":"https://orcid.org/0000-0003-4887-2839"},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yonghao Jia","raw_affiliation_strings":["School of Electronic Engineering, University of Electronic Science and Technology of China"],"affiliations":[{"raw_affiliation_string":"School of Electronic Engineering, University of Electronic Science and Technology of China","institution_ids":["https://openalex.org/I150229711"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5010424412","display_name":"Tiedi Zhang","orcid":"https://orcid.org/0000-0003-2028-6037"},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Tiedi Zhang","raw_affiliation_strings":["School of Electronic Engineering, University of Electronic Science and Technology of China"],"affiliations":[{"raw_affiliation_string":"School of Electronic Engineering, University of Electronic Science and Technology of China","institution_ids":["https://openalex.org/I150229711"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5081115024","display_name":"Bo Yan","orcid":"https://orcid.org/0000-0003-0256-9682"},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Bo Yan","raw_affiliation_strings":["School of Electronic Engineering, University of Electronic Science and Technology of China"],"affiliations":[{"raw_affiliation_string":"School of Electronic Engineering, University of Electronic Science and Technology of China","institution_ids":["https://openalex.org/I150229711"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5115587961","display_name":"Ruimin Xu","orcid":null},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Ruimin Xu","raw_affiliation_strings":["School of Electronic Engineering, University of Electronic Science and Technology of China"],"affiliations":[{"raw_affiliation_string":"School of Electronic Engineering, University of Electronic Science and Technology of China","institution_ids":["https://openalex.org/I150229711"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":7,"corresponding_author_ids":["https://openalex.org/A5101514957"],"corresponding_institution_ids":["https://openalex.org/I150229711"],"apc_list":null,"apc_paid":null,"fwci":0.4176,"has_fulltext":true,"cited_by_count":8,"citation_normalized_percentile":{"value":0.6337481,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":"14","issue":"15","first_page":"20170559","last_page":"20170559"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.7968102097511292},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.7669895887374878},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7438656091690063},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.7378255724906921},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.6858696937561035},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6759446859359741},{"id":"https://openalex.org/keywords/coupling","display_name":"Coupling (piping)","score":0.5142016410827637},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.5044773817062378},{"id":"https://openalex.org/keywords/signal","display_name":"SIGNAL (programming language)","score":0.4780628979206085},{"id":"https://openalex.org/keywords/extraction","display_name":"Extraction (chemistry)","score":0.4276480972766876},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.40176117420196533},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.20506122708320618},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.19346770644187927},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.18718722462654114},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.10523754358291626},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.09110480546951294},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.09033727645874023},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.08348089456558228},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.07697874307632446}],"concepts":[{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.7968102097511292},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.7669895887374878},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7438656091690063},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.7378255724906921},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6858696937561035},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6759446859359741},{"id":"https://openalex.org/C131584629","wikidata":"https://www.wikidata.org/wiki/Q4308705","display_name":"Coupling (piping)","level":2,"score":0.5142016410827637},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.5044773817062378},{"id":"https://openalex.org/C2779843651","wikidata":"https://www.wikidata.org/wiki/Q7390335","display_name":"SIGNAL (programming language)","level":2,"score":0.4780628979206085},{"id":"https://openalex.org/C4725764","wikidata":"https://www.wikidata.org/wiki/Q844704","display_name":"Extraction (chemistry)","level":2,"score":0.4276480972766876},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.40176117420196533},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.20506122708320618},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.19346770644187927},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.18718722462654114},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.10523754358291626},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.09110480546951294},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.09033727645874023},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.08348089456558228},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.07697874307632446},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1587/elex.14.20170559","is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.14.20170559","pdf_url":"https://www.jstage.jst.go.jp/article/elex/14/15/14_14.20170559/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.1587/elex.14.20170559","is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.14.20170559","pdf_url":"https://www.jstage.jst.go.jp/article/elex/14/15/14_14.20170559/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"},"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2739303084.pdf","grobid_xml":"https://content.openalex.org/works/W2739303084.grobid-xml"},"referenced_works_count":13,"referenced_works":["https://openalex.org/W1495315316","https://openalex.org/W1976003708","https://openalex.org/W1992553426","https://openalex.org/W2066560481","https://openalex.org/W2099408414","https://openalex.org/W2136181622","https://openalex.org/W2288920214","https://openalex.org/W2337316441","https://openalex.org/W2519255709","https://openalex.org/W2589307080","https://openalex.org/W2593577643","https://openalex.org/W2607221316","https://openalex.org/W4231585656"],"related_works":["https://openalex.org/W2568972147","https://openalex.org/W2472160638","https://openalex.org/W3133008552","https://openalex.org/W2424786073","https://openalex.org/W3113886925","https://openalex.org/W3112282132","https://openalex.org/W1972936611","https://openalex.org/W2336122482","https://openalex.org/W3036107016","https://openalex.org/W4378894925"],"abstract_inverted_index":{"The":[0,44,116],"accurate":[1],"extraction":[2,96],"of":[3,17,27,58,70,133],"inter-electrode":[4],"coupling":[5],"capacitances":[6],"(IECCs)":[7],"is":[8,42],"a":[9,24,106,110],"difficult":[10],"but":[11,91],"important":[12],"issue":[13],"in":[14,87],"small-signal":[15,107],"modeling":[16,132],"highly":[18],"scaled":[19],"transistors.":[20],"In":[21],"this":[22,77,102,121],"paper,":[23],"new":[25],"method":[26,45,78,122],"determining":[28,65],"the":[29,47,56,66,74,83,94,131],"IECCs":[30,62],"for":[31,98,109],"deep-submicron":[32],"aluminium":[33],"gallium":[34],"nitride/gallium":[35],"nitride":[36],"(AlGaN/GaN)":[37],"high":[38,124],"electron\u2013mobility":[39],"transistors":[40],"(HEMTs)":[41],"proposed.":[43],"uses":[46],"pinch-off":[48],"S-parameters":[49],"under":[50],"large":[51],"drain":[52],"bias":[53],"to":[54,130],"eliminate":[55],"influence":[57],"intrinsic":[59,99],"capacitance":[60],"on":[61],"extraction,":[63],"thereby":[64],"reliable":[67],"starting":[68],"value":[69,89,97],"IECCs.":[71],"Compared":[72],"with":[73],"conventional":[75],"method,":[76,103],"not":[79],"only":[80],"greatly":[81],"reduces":[82],"parameter":[84],"searching":[85],"range":[86],"final":[88],"optimization":[90],"also":[92],"avoids":[93],"non-physical":[95],"parameters.":[100],"Using":[101],"we":[104],"build":[105],"model":[108],"0.15":[111],"\u00b5m":[112],"gate-length":[113],"GaN":[114,135],"HEMT.":[115],"measured":[117],"data":[118],"show":[119],"that":[120],"has":[123],"precision":[125],"and":[126],"can":[127],"be":[128],"applied":[129],"millimeter-wave":[134],"HEMTs.":[136]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":3},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}