{"id":"https://openalex.org/W2522427505","doi":"https://doi.org/10.1587/elex.13.20162002","title":"Recent progress in compound semiconductor electron devices","display_name":"Recent progress in compound semiconductor electron devices","publication_year":2016,"publication_date":"2016-01-01","ids":{"openalex":"https://openalex.org/W2522427505","doi":"https://doi.org/10.1587/elex.13.20162002","mag":"2522427505"},"language":"en","primary_location":{"id":"doi:10.1587/elex.13.20162002","is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.13.20162002","pdf_url":"https://www.jstage.jst.go.jp/article/elex/13/18/13_13.20162002/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"diamond","oa_url":"https://www.jstage.jst.go.jp/article/elex/13/18/13_13.20162002/_pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5030379928","display_name":"Yasuyuki Miyamoto","orcid":"https://orcid.org/0000-0002-2676-7264"},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698"]}],"countries":["JP"],"is_corresponding":true,"raw_author_name":"Yasuyuki Miyamoto","raw_affiliation_strings":["Department of Electrical and Electronic Engineering, Tokyo Institute of Technology","Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, Tokyo Institute of Technology","institution_ids":["https://openalex.org/I114531698"]},{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552, Japan","institution_ids":["https://openalex.org/I114531698"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5030379928"],"corresponding_institution_ids":["https://openalex.org/I114531698"],"apc_list":null,"apc_paid":null,"fwci":0.2048,"has_fulltext":true,"cited_by_count":3,"citation_normalized_percentile":{"value":0.60786868,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":"13","issue":"18","first_page":"20162002","last_page":"20162002"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10382","display_name":"Quantum and electron transport phenomena","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/compound-semiconductor","display_name":"Compound semiconductor","score":0.6460686326026917},{"id":"https://openalex.org/keywords/semiconductor","display_name":"Semiconductor","score":0.5895573496818542},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5021717548370361},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.49063482880592346},{"id":"https://openalex.org/keywords/semiconductor-device","display_name":"Semiconductor device","score":0.4406067728996277},{"id":"https://openalex.org/keywords/engineering-physics","display_name":"Engineering physics","score":0.42521360516548157},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.3979875445365906},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.2785857617855072}],"concepts":[{"id":"https://openalex.org/C86537342","wikidata":"https://www.wikidata.org/wiki/Q2659774","display_name":"Compound semiconductor","level":4,"score":0.6460686326026917},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.5895573496818542},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5021717548370361},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.49063482880592346},{"id":"https://openalex.org/C79635011","wikidata":"https://www.wikidata.org/wiki/Q175805","display_name":"Semiconductor device","level":3,"score":0.4406067728996277},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.42521360516548157},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.3979875445365906},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2785857617855072},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1587/elex.13.20162002","is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.13.20162002","pdf_url":"https://www.jstage.jst.go.jp/article/elex/13/18/13_13.20162002/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.1587/elex.13.20162002","is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.13.20162002","pdf_url":"https://www.jstage.jst.go.jp/article/elex/13/18/13_13.20162002/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"},"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.5}],"awards":[{"id":"https://openalex.org/G4428350902","display_name":"Exploration of breakthrough in terahertz-device performance by understanding the radiation mechanism from view point of electron travelling and transition","funder_award_id":"16H06292","funder_id":"https://openalex.org/F4320334764","funder_display_name":"Japan Society for the Promotion of Science"},{"id":"https://openalex.org/G6280646911","display_name":"Complementary vertical tunnel FET aiming for low voltage and high speed operation by heterostructure design and miniaturization","funder_award_id":"26249046","funder_id":"https://openalex.org/F4320334764","funder_display_name":"Japan Society for the Promotion of Science"}],"funders":[{"id":"https://openalex.org/F4320320912","display_name":"Ministry of Education, Culture, Sports, Science and Technology","ror":"https://ror.org/048rj2z13"},{"id":"https://openalex.org/F4320334764","display_name":"Japan Society for the Promotion of Science","ror":"https://ror.org/00hhkn466"}],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2522427505.pdf","grobid_xml":"https://content.openalex.org/works/W2522427505.grobid-xml"},"referenced_works_count":52,"referenced_works":["https://openalex.org/W1551792495","https://openalex.org/W1560632350","https://openalex.org/W1578592071","https://openalex.org/W1859594946","https://openalex.org/W1949171770","https://openalex.org/W1965817159","https://openalex.org/W1966891534","https://openalex.org/W1969141180","https://openalex.org/W1969584769","https://openalex.org/W1988790801","https://openalex.org/W1992964988","https://openalex.org/W1993353738","https://openalex.org/W1998340256","https://openalex.org/W1999797824","https://openalex.org/W2001775719","https://openalex.org/W2010780476","https://openalex.org/W2014435987","https://openalex.org/W2015637525","https://openalex.org/W2016280111","https://openalex.org/W2018018428","https://openalex.org/W2018495830","https://openalex.org/W2029666313","https://openalex.org/W2032262202","https://openalex.org/W2044965380","https://openalex.org/W2050521635","https://openalex.org/W2056969540","https://openalex.org/W2057306736","https://openalex.org/W2082117934","https://openalex.org/W2085727239","https://openalex.org/W2086414227","https://openalex.org/W2092387864","https://openalex.org/W2094547007","https://openalex.org/W2097294853","https://openalex.org/W2113231617","https://openalex.org/W2114001304","https://openalex.org/W2118465650","https://openalex.org/W2122578700","https://openalex.org/W2124251488","https://openalex.org/W2134855173","https://openalex.org/W2142655520","https://openalex.org/W2144056948","https://openalex.org/W2146144262","https://openalex.org/W2154249635","https://openalex.org/W2158892965","https://openalex.org/W2164322464","https://openalex.org/W2165108684","https://openalex.org/W2169301346","https://openalex.org/W2169512069","https://openalex.org/W2288234485","https://openalex.org/W2332379034","https://openalex.org/W2500854597","https://openalex.org/W2546049333"],"related_works":["https://openalex.org/W1964541249","https://openalex.org/W2132668091","https://openalex.org/W2056022460","https://openalex.org/W2024400607","https://openalex.org/W2092751749","https://openalex.org/W4206499228","https://openalex.org/W1989216939","https://openalex.org/W2804684724","https://openalex.org/W3140594124","https://openalex.org/W2245119942"],"abstract_inverted_index":{"Compound":[0],"semiconductor":[1,21,50,93],"electronic":[2],"devices":[3,22,34,51,94],"have":[4,13],"the":[5,46,67,88,104,114,119,125,133,143],"capability":[6],"to":[7],"provide":[8],"high-speed":[9],"operation":[10],"as":[11,25,31,60,80,103,142],"they":[12],"higher":[14],"mobility":[15],"than":[16],"Si.":[17],"At":[18],"present,":[19],"compound":[20,42,49,92],"are":[23],"popular":[24],"parts":[26],"of":[27,39,48,55,77,91,127],"consumer":[28,96],"electronics":[29],"such":[30,102],"wireless":[32],"communication":[33],"or":[35],"satellite":[36],"television.":[37],"Introduction":[38],"wide":[40],"bandgap":[41],"semiconductors":[43],"has":[44,72],"increased":[45],"use":[47],"in":[52,95],"base":[53],"stations":[54],"cellular":[56],"phone":[57],"systems":[58],"and":[59,98,124],"replacements":[61],"for":[62,83,146],"vacuum":[63],"tubes.":[64],"More":[65],"recently,":[66],"research":[68],"on":[69],"InGaAs":[70,110,120,140],"MOSFET":[71,141],"been":[73],"directed":[74],"towards":[75],"realization":[76],"its":[78,99],"potential":[79],"an":[81],"alternative":[82],"silicon.":[84],"This":[85],"review":[86],"explains":[87],"present":[89],"commercialization":[90],"electronics,":[97],"state-of-art":[100],"results":[101],"529-GHz":[105],"dynamic":[106],"frequency":[107],"divider":[108],"using":[109],"heterojunction":[111],"bipolar":[112],"transistors,":[113],"1-THz":[115],"amplification":[116],"provided":[117,131],"by":[118,132],"highelectron-mobility":[121],"transistor":[122],"(HEMT),":[123],"power":[126],"3":[128],"Wmm":[129],"-1":[130],"GaN":[134],"HEMT":[135],"at":[136],"96":[137],"GHz.":[138],"The":[139],"next":[144],"candidate":[145],"logic":[147],"circuit":[148],"components,":[149],"is":[150],"also":[151],"explained.":[152]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2019,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}