{"id":"https://openalex.org/W2419120981","doi":"https://doi.org/10.1587/elex.13.20160483","title":"&lt;i&gt;C&lt;/i&gt;-band general Class-J power amplifier using GaN HEMT","display_name":"&lt;i&gt;C&lt;/i&gt;-band general Class-J power amplifier using GaN HEMT","publication_year":2016,"publication_date":"2016-01-01","ids":{"openalex":"https://openalex.org/W2419120981","doi":"https://doi.org/10.1587/elex.13.20160483","mag":"2419120981"},"language":"en","primary_location":{"id":"doi:10.1587/elex.13.20160483","is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.13.20160483","pdf_url":"https://www.jstage.jst.go.jp/article/elex/13/12/13_13.20160483/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"diamond","oa_url":"https://www.jstage.jst.go.jp/article/elex/13/12/13_13.20160483/_pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5112198763","display_name":"Zhebin Hu","orcid":null},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zhebin Hu","raw_affiliation_strings":["School of Electronic Engineering, University of Electronic Science and Technology of China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electronic Engineering, University of Electronic Science and Technology of China","institution_ids":["https://openalex.org/I150229711"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5027732448","display_name":"Chaoyi Huang","orcid":"https://orcid.org/0000-0003-4860-9934"},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Chaoyi Huang","raw_affiliation_strings":["School of Electronic Engineering, University of Electronic Science and Technology of China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electronic Engineering, University of Electronic Science and Technology of China","institution_ids":["https://openalex.org/I150229711"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5090412543","display_name":"Songbai He","orcid":"https://orcid.org/0000-0002-1770-7569"},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Songbai He","raw_affiliation_strings":["School of Electronic Engineering, University of Electronic Science and Technology of China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electronic Engineering, University of Electronic Science and Technology of China","institution_ids":["https://openalex.org/I150229711"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5078656438","display_name":"Fei You","orcid":"https://orcid.org/0000-0001-7708-4618"},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Fei You","raw_affiliation_strings":["School of Electronic Engineering, University of Electronic Science and Technology of China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electronic Engineering, University of Electronic Science and Technology of China","institution_ids":["https://openalex.org/I150229711"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103690507","display_name":"Shuyi Xie","orcid":null},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Shuyi Xie","raw_affiliation_strings":["School of Electronic Engineering, University of Electronic Science and Technology of China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electronic Engineering, University of Electronic Science and Technology of China","institution_ids":["https://openalex.org/I150229711"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5101851380","display_name":"Haodong Lin","orcid":"https://orcid.org/0000-0002-0219-9602"},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Haodong Lin","raw_affiliation_strings":["School of Electronic Engineering, University of Electronic Science and Technology of China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electronic Engineering, University of Electronic Science and Technology of China","institution_ids":["https://openalex.org/I150229711"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I150229711"],"apc_list":null,"apc_paid":null,"fwci":0.5867,"has_fulltext":true,"cited_by_count":8,"citation_normalized_percentile":{"value":0.71094785,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":"13","issue":"12","first_page":"20160483","last_page":"20160483"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9980000257492065,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9969000220298767,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.8707362413406372},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.7101393342018127},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4871525466442108},{"id":"https://openalex.org/keywords/class","display_name":"Class (philosophy)","score":0.45959505438804626},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.44031038880348206},{"id":"https://openalex.org/keywords/rf-power-amplifier","display_name":"RF power amplifier","score":0.41676419973373413},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.41422414779663086},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4096916913986206},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.35497355461120605},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.31646931171417236},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.16654178500175476},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.1555142104625702},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.04622316360473633}],"concepts":[{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.8707362413406372},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.7101393342018127},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4871525466442108},{"id":"https://openalex.org/C2777212361","wikidata":"https://www.wikidata.org/wiki/Q5127848","display_name":"Class (philosophy)","level":2,"score":0.45959505438804626},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.44031038880348206},{"id":"https://openalex.org/C196054291","wikidata":"https://www.wikidata.org/wiki/Q7276624","display_name":"RF power amplifier","level":4,"score":0.41676419973373413},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.41422414779663086},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4096916913986206},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.35497355461120605},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.31646931171417236},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.16654178500175476},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.1555142104625702},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.04622316360473633},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.0},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1587/elex.13.20160483","is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.13.20160483","pdf_url":"https://www.jstage.jst.go.jp/article/elex/13/12/13_13.20160483/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.1587/elex.13.20160483","is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.13.20160483","pdf_url":"https://www.jstage.jst.go.jp/article/elex/13/12/13_13.20160483/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"},"sustainable_development_goals":[{"score":0.6100000143051147,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[{"id":"https://openalex.org/G3360615898","display_name":null,"funder_award_id":"61271036 and 61571080","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G4408158103","display_name":"\u52a8\u6001\u6709\u6e90\u8d1f\u8f7d\u4f18\u5316\u4e0e\u77ac\u65f6\u5305\u7edc\u5e45\u5ea6\u5206\u6bb5\u7684\u5bbd\u5e26\u9ad8\u6548\u7387\u53d1\u5c04\u673a\u7814\u7a76","funder_award_id":"61571080","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G5670938523","display_name":"\u57fa\u4e8e\u5b9e\u9891\u6280\u672f\u7684\u9ad8\u6548\u7387\u5bbd\u5e26\u529f\u7387\u653e\u5927\u5668\u7814\u7a76","funder_award_id":"61271036","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"}],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"}],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2419120981.pdf","grobid_xml":"https://content.openalex.org/works/W2419120981.grobid-xml"},"referenced_works_count":11,"referenced_works":["https://openalex.org/W1565235666","https://openalex.org/W1626955342","https://openalex.org/W1996322867","https://openalex.org/W2052061829","https://openalex.org/W2090729248","https://openalex.org/W2105007723","https://openalex.org/W2111378114","https://openalex.org/W2161874091","https://openalex.org/W2165594312","https://openalex.org/W2168607441","https://openalex.org/W2328194623"],"related_works":["https://openalex.org/W2135585773","https://openalex.org/W2992500859","https://openalex.org/W2020176219","https://openalex.org/W2112818350","https://openalex.org/W2124233491","https://openalex.org/W2116357337","https://openalex.org/W2338393604","https://openalex.org/W2162628894","https://openalex.org/W2096138168","https://openalex.org/W2084074909"],"abstract_inverted_index":{"In":[0],"this":[1],"paper,":[2],"a":[3,10,21,44],"C-band":[4],"wideband":[5,35,45],"power":[6],"amplifier":[7,71],"(PA)":[8],"using":[9],"GaN":[11],"HEMT":[12],"is":[13,31,53],"proposed.":[14],"The":[15,70],"general":[16],"Class-J":[17],"mode,":[18],"which":[19],"offer":[20],"bigger":[22],"design":[23],"space":[24],"for":[25,67],"the":[26,40,58,68],"fundamental":[27],"and":[28,55,61,76],"harmonic":[29,60],"terminations,":[30],"introduced":[32],"to":[33,38,50,84],"implement":[34],"PA.":[36],"Then,":[37],"verify":[39],"mechanism":[41],"mentioned":[42],"above,":[43],"PA":[46],"operating":[47],"from":[48,82],"3.5":[49,83],"6.0":[51],"GHz":[52],"proposed":[54],"fabricated.":[56],"Meanwhile,":[57],"load/source":[59],"baseband":[62],"impedances":[63],"are":[64],"also":[65],"considered":[66],"linearity.":[69],"exhibits":[72],"8\u201311":[73],"dB":[74],"gain":[75],"51%\u201364%":[77],"drain":[78],"efficiency":[79],"(DE)":[80],"covering":[81],"5.5":[85],"GHz.":[86]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":2},{"year":2019,"cited_by_count":3},{"year":2017,"cited_by_count":1}],"updated_date":"2026-07-31T08:31:51.225901","created_date":"2025-10-10T00:00:00"}
