{"id":"https://openalex.org/W1976003708","doi":"https://doi.org/10.1587/elex.11.20140613","title":"Equivalent circuit model of millimeter-wave AlGaN/GaN HEMTs","display_name":"Equivalent circuit model of millimeter-wave AlGaN/GaN HEMTs","publication_year":2014,"publication_date":"2014-01-01","ids":{"openalex":"https://openalex.org/W1976003708","doi":"https://doi.org/10.1587/elex.11.20140613","mag":"1976003708"},"language":"en","primary_location":{"id":"doi:10.1587/elex.11.20140613","is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.11.20140613","pdf_url":"https://www.jstage.jst.go.jp/article/elex/11/17/11_11.20140613/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"diamond","oa_url":"https://www.jstage.jst.go.jp/article/elex/11/17/11_11.20140613/_pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5103397993","display_name":"Xiaobin Luo","orcid":null},"institutions":[{"id":"https://openalex.org/I125839683","display_name":"Beijing Institute of Technology","ror":"https://ror.org/01skt4w74","country_code":"CN","type":"education","lineage":["https://openalex.org/I125839683","https://openalex.org/I890469752"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Luo Xiaobin","raw_affiliation_strings":["Laboratory of Millimeter-wave and Terahertz Technology, Beijing Institute of Technology"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Laboratory of Millimeter-wave and Terahertz Technology, Beijing Institute of Technology","institution_ids":["https://openalex.org/I125839683"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5005880086","display_name":"Weihua Yu","orcid":"https://orcid.org/0000-0002-8974-0763"},"institutions":[{"id":"https://openalex.org/I125839683","display_name":"Beijing Institute of Technology","ror":"https://ror.org/01skt4w74","country_code":"CN","type":"education","lineage":["https://openalex.org/I125839683","https://openalex.org/I890469752"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yu Weihua","raw_affiliation_strings":["Laboratory of Millimeter-wave and Terahertz Technology, Beijing Institute of Technology"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Laboratory of Millimeter-wave and Terahertz Technology, Beijing Institute of Technology","institution_ids":["https://openalex.org/I125839683"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109944664","display_name":"Xin Lv","orcid":null},"institutions":[{"id":"https://openalex.org/I125839683","display_name":"Beijing Institute of Technology","ror":"https://ror.org/01skt4w74","country_code":"CN","type":"education","lineage":["https://openalex.org/I125839683","https://openalex.org/I890469752"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Lv Xin","raw_affiliation_strings":["Laboratory of Millimeter-wave and Terahertz Technology, Beijing Institute of Technology"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Laboratory of Millimeter-wave and Terahertz Technology, Beijing Institute of Technology","institution_ids":["https://openalex.org/I125839683"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112308095","display_name":"Lv Yuanjie","orcid":null},"institutions":[{"id":"https://openalex.org/I4210160974","display_name":"Hebei Semiconductor Research Institute","ror":"https://ror.org/050777m95","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210160974"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Lv Yuanjie","raw_affiliation_strings":["National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute","institution_ids":["https://openalex.org/I4210160974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112051175","display_name":"Dun Shaobo","orcid":null},"institutions":[{"id":"https://openalex.org/I4210160974","display_name":"Hebei Semiconductor Research Institute","ror":"https://ror.org/050777m95","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210160974"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Dun Shaobo","raw_affiliation_strings":["National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute","institution_ids":["https://openalex.org/I4210160974"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5112107481","display_name":"Feng Zhihong","orcid":null},"institutions":[{"id":"https://openalex.org/I4210160974","display_name":"Hebei Semiconductor Research Institute","ror":"https://ror.org/050777m95","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210160974"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Feng Zhihong","raw_affiliation_strings":["National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute","institution_ids":["https://openalex.org/I4210160974"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":6,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.8264,"has_fulltext":true,"cited_by_count":9,"citation_normalized_percentile":{"value":0.71910561,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":96},"biblio":{"volume":"11","issue":"17","first_page":"20140613","last_page":"20140613"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.995199978351593,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.9235865473747253},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6077015399932861},{"id":"https://openalex.org/keywords/extremely-high-frequency","display_name":"Extremely high frequency","score":0.5977539420127869},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.597595751285553},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5856497287750244},{"id":"https://openalex.org/keywords/oscillation","display_name":"Oscillation (cell signaling)","score":0.5734111070632935},{"id":"https://openalex.org/keywords/millimeter","display_name":"Millimeter","score":0.5522178411483765},{"id":"https://openalex.org/keywords/small-signal-model","display_name":"Small-signal model","score":0.528310239315033},{"id":"https://openalex.org/keywords/equivalent-circuit","display_name":"Equivalent circuit","score":0.5224027633666992},{"id":"https://openalex.org/keywords/harmonic-balance","display_name":"Harmonic balance","score":0.4931730628013611},{"id":"https://openalex.org/keywords/large-signal-model","display_name":"Large-signal model","score":0.48803773522377014},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.4727942645549774},{"id":"https://openalex.org/keywords/signal","display_name":"SIGNAL (programming language)","score":0.4466648995876312},{"id":"https://openalex.org/keywords/wide-bandgap-semiconductor","display_name":"Wide-bandgap semiconductor","score":0.4142736792564392},{"id":"https://openalex.org/keywords/nonlinear-system","display_name":"Nonlinear system","score":0.3855047821998596},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.25481417775154114},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.2134343385696411},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.14885926246643066},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.1278969943523407},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.12184610962867737},{"id":"https://openalex.org/keywords/optics","display_name":"Optics","score":0.1175396740436554},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.07338294386863708},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.06102302670478821}],"concepts":[{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.9235865473747253},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6077015399932861},{"id":"https://openalex.org/C45764600","wikidata":"https://www.wikidata.org/wiki/Q570342","display_name":"Extremely high frequency","level":2,"score":0.5977539420127869},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.597595751285553},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5856497287750244},{"id":"https://openalex.org/C2778439541","wikidata":"https://www.wikidata.org/wiki/Q7106412","display_name":"Oscillation (cell signaling)","level":2,"score":0.5734111070632935},{"id":"https://openalex.org/C109792285","wikidata":"https://www.wikidata.org/wiki/Q174789","display_name":"Millimeter","level":2,"score":0.5522178411483765},{"id":"https://openalex.org/C2781038218","wikidata":"https://www.wikidata.org/wiki/Q1773875","display_name":"Small-signal model","level":3,"score":0.528310239315033},{"id":"https://openalex.org/C23572009","wikidata":"https://www.wikidata.org/wiki/Q964981","display_name":"Equivalent circuit","level":3,"score":0.5224027633666992},{"id":"https://openalex.org/C121758426","wikidata":"https://www.wikidata.org/wiki/Q5659248","display_name":"Harmonic balance","level":3,"score":0.4931730628013611},{"id":"https://openalex.org/C2779542357","wikidata":"https://www.wikidata.org/wiki/Q6489019","display_name":"Large-signal model","level":3,"score":0.48803773522377014},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.4727942645549774},{"id":"https://openalex.org/C2779843651","wikidata":"https://www.wikidata.org/wiki/Q7390335","display_name":"SIGNAL (programming language)","level":2,"score":0.4466648995876312},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.4142736792564392},{"id":"https://openalex.org/C158622935","wikidata":"https://www.wikidata.org/wiki/Q660848","display_name":"Nonlinear system","level":2,"score":0.3855047821998596},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.25481417775154114},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2134343385696411},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.14885926246643066},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.1278969943523407},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.12184610962867737},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.1175396740436554},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.07338294386863708},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.06102302670478821},{"id":"https://openalex.org/C54355233","wikidata":"https://www.wikidata.org/wiki/Q7162","display_name":"Genetics","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C86803240","wikidata":"https://www.wikidata.org/wiki/Q420","display_name":"Biology","level":0,"score":0.0},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1587/elex.11.20140613","is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.11.20140613","pdf_url":"https://www.jstage.jst.go.jp/article/elex/11/17/11_11.20140613/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.1587/elex.11.20140613","is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.11.20140613","pdf_url":"https://www.jstage.jst.go.jp/article/elex/11/17/11_11.20140613/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"},"sustainable_development_goals":[{"score":0.6600000262260437,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[{"id":"https://openalex.org/G4151285367","display_name":null,"funder_award_id":"61306113","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"}],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"},{"id":"https://openalex.org/F4320335442","display_name":"Beijing Higher Education Young Elite Teacher Project","ror":null}],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W1976003708.pdf","grobid_xml":"https://content.openalex.org/works/W1976003708.grobid-xml"},"referenced_works_count":5,"referenced_works":["https://openalex.org/W338393456","https://openalex.org/W2099064873","https://openalex.org/W2112265040","https://openalex.org/W2116884970","https://openalex.org/W2150237098"],"related_works":["https://openalex.org/W2472160638","https://openalex.org/W3209950509","https://openalex.org/W2559825181","https://openalex.org/W2036016074","https://openalex.org/W3088454288","https://openalex.org/W2466508933","https://openalex.org/W4313611767","https://openalex.org/W2613044742","https://openalex.org/W4377089489","https://openalex.org/W1975307200"],"abstract_inverted_index":{"A":[0,54],"2":[1,19],"\u00d7":[2],"50":[3],"AlGaN/GaN":[4],"High":[5],"Electron":[6],"Mobility":[7],"Transistor":[8],"(HEMT)":[9],"is":[10,42,59,93],"designed":[11],"and":[12,18,50,69],"fabricated":[13],"with":[14],"0.1":[15],"\u00b5m":[16,20],"gate-length":[17],"source-drain":[21],"distance":[22],"in":[23],"the":[24,46,63,81,85,91,96],"paper.":[25],"The":[26,36,66,88],"maximum":[27],"frequency":[28],"of":[29,84,90],"oscillation":[30],"(fmax)":[31],"may":[32],"reach":[33],"177":[34],"GHz.":[35],"small":[37],"signal":[38,57],"equivalent":[39],"circuit":[40],"model":[41,58,92],"obtained":[43],"by":[44,79],"using":[45],"open-short":[47],"test":[48],"structure":[49],"reverse":[51],"cut-off":[52],"method.":[53],"novel":[55],"large":[56],"constructed":[60],"based":[61],"on":[62],"SDD":[64],"form.":[65],"new":[67],"I-V":[68],"C-V":[70],"expressions":[71],"are":[72],"proposed":[73],"to":[74,107],"complete":[75],"nonlinear":[76],"fitting":[77],"accurately":[78],"contrasting":[80],"measure":[82],"results":[83],"GaN":[86,109],"HEMT.":[87],"convergence":[89],"good":[94],"during":[95],"harmonic":[97],"balance":[98],"simulation.":[99],"So":[100],"this":[101],"modeling":[102],"method":[103],"can":[104],"be":[105],"applied":[106],"millimeter-wave":[108],"HEMTs.":[110]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2021,"cited_by_count":2},{"year":2017,"cited_by_count":2},{"year":2015,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}