{"id":"https://openalex.org/W1992964988","doi":"https://doi.org/10.1587/elex.11.20140567","title":"Channel thickness dependence on InGaAs MOSFET with n-InP source for high current density","display_name":"Channel thickness dependence on InGaAs MOSFET with n-InP source for high current density","publication_year":2014,"publication_date":"2014-01-01","ids":{"openalex":"https://openalex.org/W1992964988","doi":"https://doi.org/10.1587/elex.11.20140567","mag":"1992964988"},"language":"en","primary_location":{"id":"doi:10.1587/elex.11.20140567","is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.11.20140567","pdf_url":"https://www.jstage.jst.go.jp/article/elex/11/14/11_11.20140567/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"diamond","oa_url":"https://www.jstage.jst.go.jp/article/elex/11/14/11_11.20140567/_pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5109198464","display_name":"Kazuto Ohsawa","orcid":null},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698"]}],"countries":["JP"],"is_corresponding":true,"raw_author_name":"Kazuto Ohsawa","raw_affiliation_strings":["Department of Physical Electronics, Tokyo Institute of Technology"],"affiliations":[{"raw_affiliation_string":"Department of Physical Electronics, Tokyo Institute of Technology","institution_ids":["https://openalex.org/I114531698"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102267890","display_name":"Atsushi Kato","orcid":null},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Atsushi Kato","raw_affiliation_strings":["Department of Physical Electronics, Tokyo Institute of Technology"],"affiliations":[{"raw_affiliation_string":"Department of Physical Electronics, Tokyo Institute of Technology","institution_ids":["https://openalex.org/I114531698"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103267865","display_name":"Toru Kanazawa","orcid":"https://orcid.org/0000-0002-0808-7062"},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Toru Kanazawa","raw_affiliation_strings":["Department of Physical Electronics, Tokyo Institute of Technology"],"affiliations":[{"raw_affiliation_string":"Department of Physical Electronics, Tokyo Institute of Technology","institution_ids":["https://openalex.org/I114531698"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5006150893","display_name":"Eiji Uehara","orcid":null},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Eiji Uehara","raw_affiliation_strings":["Department of Physical Electronics, Tokyo Institute of Technology"],"affiliations":[{"raw_affiliation_string":"Department of Physical Electronics, Tokyo Institute of Technology","institution_ids":["https://openalex.org/I114531698"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5030379928","display_name":"Yasuyuki Miyamoto","orcid":"https://orcid.org/0000-0002-2676-7264"},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Yasuyuki Miyamoto","raw_affiliation_strings":["Department of Physical Electronics, Tokyo Institute of Technology"],"affiliations":[{"raw_affiliation_string":"Department of Physical Electronics, Tokyo Institute of Technology","institution_ids":["https://openalex.org/I114531698"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5109198464"],"corresponding_institution_ids":["https://openalex.org/I114531698"],"apc_list":null,"apc_paid":null,"fwci":0.6385,"has_fulltext":true,"cited_by_count":3,"citation_normalized_percentile":{"value":0.72725862,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":96},"biblio":{"volume":"11","issue":"14","first_page":"20140567","last_page":"20140567"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7363622784614563},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.7074500918388367},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.5860694646835327},{"id":"https://openalex.org/keywords/substrate","display_name":"Substrate (aquarium)","score":0.5484673380851746},{"id":"https://openalex.org/keywords/current-density","display_name":"Current density","score":0.5473412275314331},{"id":"https://openalex.org/keywords/channel","display_name":"Channel (broadcasting)","score":0.5340059995651245},{"id":"https://openalex.org/keywords/current","display_name":"Current (fluid)","score":0.5165671110153198},{"id":"https://openalex.org/keywords/epitaxy","display_name":"Epitaxy","score":0.4804362952709198},{"id":"https://openalex.org/keywords/doping","display_name":"Doping","score":0.46511462330818176},{"id":"https://openalex.org/keywords/electron-mobility","display_name":"Electron mobility","score":0.4610857367515564},{"id":"https://openalex.org/keywords/indium-gallium-arsenide","display_name":"Indium gallium arsenide","score":0.43062546849250793},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.34543707966804504},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.3250086307525635},{"id":"https://openalex.org/keywords/gallium-arsenide","display_name":"Gallium arsenide","score":0.300899863243103},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.28791874647140503},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.23294275999069214},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.0865340530872345},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.06738704442977905},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.0625164806842804}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7363622784614563},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.7074500918388367},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.5860694646835327},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.5484673380851746},{"id":"https://openalex.org/C207740977","wikidata":"https://www.wikidata.org/wiki/Q234072","display_name":"Current density","level":2,"score":0.5473412275314331},{"id":"https://openalex.org/C127162648","wikidata":"https://www.wikidata.org/wiki/Q16858953","display_name":"Channel (broadcasting)","level":2,"score":0.5340059995651245},{"id":"https://openalex.org/C148043351","wikidata":"https://www.wikidata.org/wiki/Q4456944","display_name":"Current (fluid)","level":2,"score":0.5165671110153198},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.4804362952709198},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.46511462330818176},{"id":"https://openalex.org/C106782819","wikidata":"https://www.wikidata.org/wiki/Q6501076","display_name":"Electron mobility","level":2,"score":0.4610857367515564},{"id":"https://openalex.org/C2779769603","wikidata":"https://www.wikidata.org/wiki/Q2618059","display_name":"Indium gallium arsenide","level":3,"score":0.43062546849250793},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.34543707966804504},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.3250086307525635},{"id":"https://openalex.org/C510052550","wikidata":"https://www.wikidata.org/wiki/Q422819","display_name":"Gallium arsenide","level":2,"score":0.300899863243103},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.28791874647140503},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.23294275999069214},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0865340530872345},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.06738704442977905},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0625164806842804},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.0},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1587/elex.11.20140567","is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.11.20140567","pdf_url":"https://www.jstage.jst.go.jp/article/elex/11/14/11_11.20140567/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.1587/elex.11.20140567","is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.11.20140567","pdf_url":"https://www.jstage.jst.go.jp/article/elex/11/14/11_11.20140567/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"},"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.44999998807907104}],"awards":[{"id":"https://openalex.org/G2983449479","display_name":null,"funder_award_id":"Scientific Research","funder_id":"https://openalex.org/F4320334764","funder_display_name":"Japan Society for the Promotion of Science"},{"id":"https://openalex.org/G3236194794","display_name":null,"funder_award_id":"Grant-in-Aid","funder_id":"https://openalex.org/F4320334764","funder_display_name":"Japan Society for the Promotion of Science"},{"id":"https://openalex.org/G3459562248","display_name":null,"funder_award_id":"Grant","funder_id":"https://openalex.org/F4320334764","funder_display_name":"Japan Society for the Promotion of Science"},{"id":"https://openalex.org/G4789093758","display_name":null,"funder_award_id":"MEXT/JSPS","funder_id":"https://openalex.org/F4320334764","funder_display_name":"Japan Society for the Promotion of Science"},{"id":"https://openalex.org/G4874944895","display_name":null,"funder_award_id":"-in-Aid","funder_id":"https://openalex.org/F4320334764","funder_display_name":"Japan Society for the Promotion of Science"},{"id":"https://openalex.org/G6267471473","display_name":null,"funder_award_id":"Grant-in-Aid","funder_id":"https://openalex.org/F4320320912","funder_display_name":"Ministry of Education, Culture, Sports, Science and Technology"},{"id":"https://openalex.org/G7167128334","display_name":null,"funder_award_id":"Grant-in-Aid for Scientific Researc","funder_id":"https://openalex.org/F4320334764","funder_display_name":"Japan Society for the Promotion of Science"},{"id":"https://openalex.org/G7337825077","display_name":null,"funder_award_id":"Grant-in-Aid for Sc","funder_id":"https://openalex.org/F4320334764","funder_display_name":"Japan Society for the Promotion of Science"},{"id":"https://openalex.org/G7599130655","display_name":null,"funder_award_id":"Grant","funder_id":"https://openalex.org/F4320320912","funder_display_name":"Ministry of Education, Culture, Sports, Science and Technology"},{"id":"https://openalex.org/G8759943101","display_name":null,"funder_award_id":"rant-in-Aid for Scientific Research","funder_id":"https://openalex.org/F4320334764","funder_display_name":"Japan Society for the Promotion of Science"}],"funders":[{"id":"https://openalex.org/F4320320912","display_name":"Ministry of Education, Culture, Sports, Science and Technology","ror":"https://ror.org/048rj2z13"},{"id":"https://openalex.org/F4320334764","display_name":"Japan Society for the Promotion of Science","ror":"https://ror.org/00hhkn466"}],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W1992964988.pdf","grobid_xml":"https://content.openalex.org/works/W1992964988.grobid-xml"},"referenced_works_count":6,"referenced_works":["https://openalex.org/W1981175552","https://openalex.org/W1984020673","https://openalex.org/W2050521635","https://openalex.org/W2073323794","https://openalex.org/W2150784308","https://openalex.org/W2204644117"],"related_works":["https://openalex.org/W2314105963","https://openalex.org/W3138240700","https://openalex.org/W345035432","https://openalex.org/W2899510081","https://openalex.org/W3023883798","https://openalex.org/W3169342982","https://openalex.org/W2474959077","https://openalex.org/W1990249806","https://openalex.org/W2077186442","https://openalex.org/W850557098"],"abstract_inverted_index":{"InGaAs":[0,71],"is":[1,41],"a":[2,22,28,37,52,63,74,82,104],"promising":[3],"material":[4],"that":[5],"can":[6],"replace":[7],"the":[8,34,79,98],"current":[9,25,55,84],"Si":[10,75],"nMOSFET":[11],"in":[12,32,62],"CMOS":[13],"because":[14],"of":[15,36,86,97,107],"its":[16],"high":[17,23,53],"electron":[18],"mobility.":[19],"To":[20],"realize":[21],"drain":[24,54,83],"density":[26,85],"at":[27,89],"low":[29],"supply":[30],"voltage":[31],"InGaAs,":[33],"introduction":[35],"heavily":[38],"doped":[39],"source":[40,49],"essential.":[42],"We":[43],"introduced":[44,68],"an":[45],"epitaxially":[46],"grown":[47],"n-InP":[48],"and":[50,94],"obtained":[51],"density.":[56],"However,":[57],"short-channel":[58,99],"effects":[59,100],"were":[60,101],"observed":[61,102],"previous":[64],"study;":[65],"thus,":[66],"we":[67],"extremely-thin-body":[69],"III\u2013V\u2013OI":[70],"MOSFETs":[72],"on":[73],"substrate.":[76],"Accounting":[77],"for":[78,103],"channel-thickness":[80],"dependence,":[81],"2.04":[87],"A/mm":[88],"VD":[90],"=":[91],"0.5":[92],"V":[93],"clear":[95],"suppression":[96],"channel":[105],"thickness":[106],"10":[108],"nm.":[109]},"counts_by_year":[{"year":2016,"cited_by_count":2},{"year":2014,"cited_by_count":1}],"updated_date":"2026-04-10T15:06:20.359241","created_date":"2025-10-10T00:00:00"}