{"id":"https://openalex.org/W1972662665","doi":"https://doi.org/10.1587/elex.10.20130647","title":"A new dual asymmetric bit-line sense amplifier for low-voltage dynamic random access memory","display_name":"A new dual asymmetric bit-line sense amplifier for low-voltage dynamic random access memory","publication_year":2013,"publication_date":"2013-01-01","ids":{"openalex":"https://openalex.org/W1972662665","doi":"https://doi.org/10.1587/elex.10.20130647","mag":"1972662665"},"language":"en","primary_location":{"id":"doi:10.1587/elex.10.20130647","is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.10.20130647","pdf_url":"https://www.jstage.jst.go.jp/article/elex/10/18/10_10.20130647/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"bronze","oa_url":"https://www.jstage.jst.go.jp/article/elex/10/18/10_10.20130647/_pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5028025580","display_name":"Kyong Jun Noh","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kyong Jun Noh","raw_affiliation_strings":["Department of Electronic and Electrical Eng. SungKyunKwan University","System LSI Business, Device Solution, Samsung Electronics"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronic and Electrical Eng. SungKyunKwan University","institution_ids":[]},{"raw_affiliation_string":"System LSI Business, Device Solution, Samsung Electronics","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5044201544","display_name":"Jung Han Kim","orcid":"https://orcid.org/0000-0002-6678-2282"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jung Han Kim","raw_affiliation_strings":["System LSI Business, Device Solution, Samsung Electronics"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"System LSI Business, Device Solution, Samsung Electronics","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5073637751","display_name":"Cheol Ha Lee","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Cheol Ha Lee","raw_affiliation_strings":["System LSI Business, Device Solution, Samsung Electronics"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"System LSI Business, Device Solution, Samsung Electronics","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5037827523","display_name":"Jun\u2010Dong Cho","orcid":"https://orcid.org/0000-0001-7015-8274"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Jun Dong Cho","raw_affiliation_strings":["Department of Electronic and Electrical Eng. SungKyunKwan University"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronic and Electrical Eng. SungKyunKwan University","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":true,"cited_by_count":2,"citation_normalized_percentile":{"value":0.05500119,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":"10","issue":"18","first_page":"20130647","last_page":"20130647"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/sense-amplifier","display_name":"Sense amplifier","score":0.9173402190208435},{"id":"https://openalex.org/keywords/sense","display_name":"Sense (electronics)","score":0.638680100440979},{"id":"https://openalex.org/keywords/nmos-logic","display_name":"NMOS logic","score":0.6334437131881714},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5392336845397949},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.5184778571128845},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.497957706451416},{"id":"https://openalex.org/keywords/dram","display_name":"Dram","score":0.48394137620925903},{"id":"https://openalex.org/keywords/overhead","display_name":"Overhead (engineering)","score":0.4738005995750427},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4468650221824646},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4105139374732971},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.21983551979064941},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.1963512897491455},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.16379064321517944},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.12289237976074219}],"concepts":[{"id":"https://openalex.org/C32666082","wikidata":"https://www.wikidata.org/wiki/Q7450979","display_name":"Sense amplifier","level":3,"score":0.9173402190208435},{"id":"https://openalex.org/C143141573","wikidata":"https://www.wikidata.org/wiki/Q7450971","display_name":"Sense (electronics)","level":2,"score":0.638680100440979},{"id":"https://openalex.org/C197162436","wikidata":"https://www.wikidata.org/wiki/Q83908","display_name":"NMOS logic","level":4,"score":0.6334437131881714},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5392336845397949},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.5184778571128845},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.497957706451416},{"id":"https://openalex.org/C7366592","wikidata":"https://www.wikidata.org/wiki/Q1255620","display_name":"Dram","level":2,"score":0.48394137620925903},{"id":"https://openalex.org/C2779960059","wikidata":"https://www.wikidata.org/wiki/Q7113681","display_name":"Overhead (engineering)","level":2,"score":0.4738005995750427},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4468650221824646},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4105139374732971},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.21983551979064941},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.1963512897491455},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.16379064321517944},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.12289237976074219}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1587/elex.10.20130647","is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.10.20130647","pdf_url":"https://www.jstage.jst.go.jp/article/elex/10/18/10_10.20130647/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.1587/elex.10.20130647","is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.10.20130647","pdf_url":"https://www.jstage.jst.go.jp/article/elex/10/18/10_10.20130647/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"},"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.8999999761581421,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[{"id":"https://openalex.org/F4320332195","display_name":"Samsung","ror":"https://ror.org/04w3jy968"}],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W1972662665.pdf","grobid_xml":"https://content.openalex.org/works/W1972662665.grobid-xml"},"referenced_works_count":2,"referenced_works":["https://openalex.org/W2069406659","https://openalex.org/W2112127942"],"related_works":["https://openalex.org/W2154176871","https://openalex.org/W1985059941","https://openalex.org/W2740703383","https://openalex.org/W1607126780","https://openalex.org/W2029990318","https://openalex.org/W2601845499","https://openalex.org/W2117344730","https://openalex.org/W4231592364","https://openalex.org/W2900372418","https://openalex.org/W1989206638"],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"a":[3,114],"new":[4],"dual":[5],"asymmetric":[6,69],"bit-line":[7,20,25,39,57,81],"sense":[8,62,71,77,109],"amplifier":[9,78,110],"to":[10,53,93,113,143,150],"cope":[11],"with":[12],"the":[13,54,100,106,118,137],"recent":[14],"need":[15],"for":[16,23,79],"GND":[17,36,80,144],"or":[18,37],"VDD":[19,38],"pre-charge":[21,40,58,82,145],"scheme":[22,146],"improving":[24],"sensing":[26,122],"margin":[27],"and":[28,50,73,84,96,124,133,136],"speed":[29],"of":[30,47,67,108,139],"contemporary":[31],"low-voltage":[32],"DRAM.":[33],"The":[34],"existing":[35],"schemes":[41],"have":[42,127],"some":[43],"disadvantages":[44],"in":[45,105],"terms":[46],"power,":[48,97],"area":[49,101],"practicality,":[51],"compared":[52],"conventional":[55,115],"VDD/2":[56,116],"scheme.":[59],"Our":[60],"proposed":[61],"amplifier,":[63],"which":[64],"is":[65],"composed":[66],"two":[68],"PMOS":[70],"amplifiers":[72],"one":[74],"symmetric":[75],"NMOS":[76],"scheme,":[83,117],"several":[85],"circuit":[86],"optimization":[87],"techniques":[88],"provide":[89],"excellent":[90],"results":[91],"regarding":[92],"stability,":[94],"speed,":[95],"while":[98],"keeping":[99],"overhead":[102],"under":[103],"1%":[104],"size":[107],"region.":[111],"Compared":[112],"charge":[119],"sharing":[120],"time,":[121,123],"pre-charging":[125],"time":[126],"been":[128,148],"improved":[129],"by":[130],"20%,":[131,134],"47%,":[132],"respectively":[135],"increase":[138],"power":[140],"consumption":[141],"due":[142],"has":[147],"minimized":[149],"22.2%.":[151]},"counts_by_year":[{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":1}],"updated_date":"2026-08-08T01:25:22.217667","created_date":"2025-10-10T00:00:00"}