{"id":"https://openalex.org/W1986482477","doi":"https://doi.org/10.1177/003754979306000206","title":"Process-Dependent Circuit Modeling and Simulation of SOI JFETs: Digital VLSI Applications","display_name":"Process-Dependent Circuit Modeling and Simulation of SOI JFETs: Digital VLSI Applications","publication_year":1993,"publication_date":"1993-02-01","ids":{"openalex":"https://openalex.org/W1986482477","doi":"https://doi.org/10.1177/003754979306000206","mag":"1986482477"},"language":"en","primary_location":{"id":"doi:10.1177/003754979306000206","is_oa":false,"landing_page_url":"https://doi.org/10.1177/003754979306000206","pdf_url":null,"source":{"id":"https://openalex.org/S32573412","display_name":"SIMULATION","issn_l":"0037-5497","issn":["0037-5497","1741-3133"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320017","host_organization_name":"SAGE Publishing","host_organization_lineage":["https://openalex.org/P4310320017"],"host_organization_lineage_names":["SAGE Publishing"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"SIMULATION","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5059878361","display_name":"H.S. Abdel-Aty-Zohdy","orcid":null},"institutions":[{"id":"https://openalex.org/I177721651","display_name":"Oakland University","ror":"https://ror.org/01ythxj32","country_code":"US","type":"education","lineage":["https://openalex.org/I177721651"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Hoda S. Abdel-Aty-Zohdy","raw_affiliation_strings":["Microelectronics Systems Design Laboratory Department of Electrical and Systems Engineering, Oakland University Rochester, Michigan 48309-4401"],"affiliations":[{"raw_affiliation_string":"Microelectronics Systems Design Laboratory Department of Electrical and Systems Engineering, Oakland University Rochester, Michigan 48309-4401","institution_ids":["https://openalex.org/I177721651"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5016339562","display_name":"Ihab Talkhan","orcid":null},"institutions":[{"id":"https://openalex.org/I177721651","display_name":"Oakland University","ror":"https://ror.org/01ythxj32","country_code":"US","type":"education","lineage":["https://openalex.org/I177721651"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Ihab E. Talkhan","raw_affiliation_strings":["Microelectronics Systems Design Laboratory Department of Electrical and Systems Engineering, Oakland University Rochester, Michigan 48309-4401"],"affiliations":[{"raw_affiliation_string":"Microelectronics Systems Design Laboratory Department of Electrical and Systems Engineering, Oakland University Rochester, Michigan 48309-4401","institution_ids":["https://openalex.org/I177721651"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5059878361"],"corresponding_institution_ids":["https://openalex.org/I177721651"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.09932353,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"60","issue":"2","first_page":"113","last_page":"126"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/jfet","display_name":"JFET","score":0.9917062520980835},{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"Silicon on insulator","score":0.8696854114532471},{"id":"https://openalex.org/keywords/fabrication","display_name":"Fabrication","score":0.6068561673164368},{"id":"https://openalex.org/keywords/channel","display_name":"Channel (broadcasting)","score":0.46248704195022583},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4537232220172882},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.43755194544792175},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.43350574374198914},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4178794026374817},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4140284061431885},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.36890560388565063},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.3288017511367798},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.24958404898643494},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.23855280876159668},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.21748420596122742}],"concepts":[{"id":"https://openalex.org/C2778484494","wikidata":"https://www.wikidata.org/wiki/Q385520","display_name":"JFET","level":5,"score":0.9917062520980835},{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.8696854114532471},{"id":"https://openalex.org/C136525101","wikidata":"https://www.wikidata.org/wiki/Q5428139","display_name":"Fabrication","level":3,"score":0.6068561673164368},{"id":"https://openalex.org/C127162648","wikidata":"https://www.wikidata.org/wiki/Q16858953","display_name":"Channel (broadcasting)","level":2,"score":0.46248704195022583},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4537232220172882},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.43755194544792175},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.43350574374198914},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4178794026374817},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4140284061431885},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.36890560388565063},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.3288017511367798},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.24958404898643494},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.23855280876159668},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.21748420596122742},{"id":"https://openalex.org/C71924100","wikidata":"https://www.wikidata.org/wiki/Q11190","display_name":"Medicine","level":0,"score":0.0},{"id":"https://openalex.org/C142724271","wikidata":"https://www.wikidata.org/wiki/Q7208","display_name":"Pathology","level":1,"score":0.0},{"id":"https://openalex.org/C204787440","wikidata":"https://www.wikidata.org/wiki/Q188504","display_name":"Alternative medicine","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1177/003754979306000206","is_oa":false,"landing_page_url":"https://doi.org/10.1177/003754979306000206","pdf_url":null,"source":{"id":"https://openalex.org/S32573412","display_name":"SIMULATION","issn_l":"0037-5497","issn":["0037-5497","1741-3133"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320017","host_organization_name":"SAGE Publishing","host_organization_lineage":["https://openalex.org/P4310320017"],"host_organization_lineage_names":["SAGE Publishing"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"SIMULATION","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.550000011920929,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":13,"referenced_works":["https://openalex.org/W632522619","https://openalex.org/W1651707596","https://openalex.org/W2046022087","https://openalex.org/W2078973392","https://openalex.org/W2089615922","https://openalex.org/W2126519359","https://openalex.org/W2129298496","https://openalex.org/W2135990763","https://openalex.org/W2145750057","https://openalex.org/W2151419001","https://openalex.org/W2578045866","https://openalex.org/W3022448274","https://openalex.org/W4239319182"],"related_works":["https://openalex.org/W1965671135","https://openalex.org/W2582132882","https://openalex.org/W2914685182","https://openalex.org/W2041060175","https://openalex.org/W1980580338","https://openalex.org/W2045810370","https://openalex.org/W2046924379","https://openalex.org/W2118054461","https://openalex.org/W2119969520","https://openalex.org/W2480705602"],"abstract_inverted_index":{"Accurate":[0],"circuit":[1],"modeling":[2],"and":[3,9,41,88,102,120],"simulation":[4],"of":[5,77],"Silicon-on-Insulator":[6],"(SOI)":[7],"enhancement":[8],"depletion":[10],"Junction":[11],"Field-Effect":[12],"transis":[13],"tors":[14],"(JFETs)":[15],"is":[16,32,37,65],"presented.":[17],"The":[18],"nonuniformity":[19],"in":[20,39,53],"FET":[21],"device":[22,118],"parameters":[23,50,82,119],"along":[24],"the":[25],"channel":[26,98,104],"depth":[27],"(due":[28],"to":[29,71],"fabrication":[30,48],"processes),":[31],"taken":[33],"into":[34],"account.":[35],"This":[36],"typical":[38],"SOI":[40,47,86],"other":[42],"thin-film":[43],"struc":[44],"tures.":[45],"Since":[46],"processes":[49],"are":[51,69,83,110],"represented,":[52],"our":[54],"model,":[55],"by":[56],"a":[57,97],"closed":[58],"form":[59],"mobility":[60],"variation,":[61],"improved":[62],"model":[63],"accuracy":[64],"guaranteed.":[66],"Simulation":[67],"results":[68],"found":[70],"be":[72],"within":[73],"less":[74],"than":[75],"3%":[76],"actual":[78],"measurements.":[79],"Small-signal":[80],"circuit-model":[81],"determined":[84],"for":[85,91],"FJETs":[87],"then":[89],"evaluated":[90],"further":[92],"logic":[93],"applications.":[94,122],"Inverters":[95],"with":[96,113],"Enhancenient-JFET":[99],"(E-JFET)":[100],"drivers":[101],"n-":[103],"depletion-JFET":[105],"loads":[106],"(E/D":[107],"invert":[108],"ers)":[109],"also":[111],"considered":[112],"different":[114],"supply":[115],"voltage":[116],"values,":[117],"digital":[121]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}