{"id":"https://openalex.org/W2069295211","doi":"https://doi.org/10.1155/1998/94915","title":"A \u03b2\u2010SiC MOSFET Monte Carlo Simulator IncludingInversion Layer Quantization","display_name":"A \u03b2\u2010SiC MOSFET Monte Carlo Simulator IncludingInversion Layer Quantization","publication_year":1998,"publication_date":"1998-01-01","ids":{"openalex":"https://openalex.org/W2069295211","doi":"https://doi.org/10.1155/1998/94915","mag":"2069295211"},"language":"en","primary_location":{"id":"doi:10.1155/1998/94915","is_oa":true,"landing_page_url":"https://doi.org/10.1155/1998/94915","pdf_url":"https://downloads.hindawi.com/archive/1998/094915.pdf","source":{"id":"https://openalex.org/S81291924","display_name":"VLSI design","issn_l":"1026-7123","issn":["1026-7123","1065-514X","1563-5171"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319869","host_organization_name":"Hindawi Publishing Corporation","host_organization_lineage":["https://openalex.org/P4310319869"],"host_organization_lineage_names":["Hindawi Publishing Corporation"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"VLSI Design","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"hybrid","oa_url":"https://downloads.hindawi.com/archive/1998/094915.pdf","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5042360201","display_name":"F. G\u00e1miz","orcid":"https://orcid.org/0000-0002-5072-7924"},"institutions":[{"id":"https://openalex.org/I173304897","display_name":"Universidad de Granada","ror":"https://ror.org/04njjy449","country_code":"ES","type":"education","lineage":["https://openalex.org/I173304897"]}],"countries":["ES"],"is_corresponding":true,"raw_author_name":"F. G\u00e1miz","raw_affiliation_strings":["Departamento de Electr\u00f3nica y Tecnolog\u013aa de Computadores, Universidad de Granada, Facultad de Cieneias, Avd. Fuentenueva s/n"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Departamento de Electr\u00f3nica y Tecnolog\u013aa de Computadores, Universidad de Granada, Facultad de Cieneias, Avd. Fuentenueva s/n","institution_ids":["https://openalex.org/I173304897"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5009851819","display_name":"J.B. Rold\u00e1n","orcid":"https://orcid.org/0000-0003-1662-6457"},"institutions":[{"id":"https://openalex.org/I173304897","display_name":"Universidad de Granada","ror":"https://ror.org/04njjy449","country_code":"ES","type":"education","lineage":["https://openalex.org/I173304897"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"J. B. Rold\u00e1n","raw_affiliation_strings":["Departamento de Electr\u00f3nica y Tecnolog\u013aa de Computadores, Universidad de Granada, Facultad de Cieneias, Avd. Fuentenueva s/n"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Departamento de Electr\u00f3nica y Tecnolog\u013aa de Computadores, Universidad de Granada, Facultad de Cieneias, Avd. Fuentenueva s/n","institution_ids":["https://openalex.org/I173304897"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5017556403","display_name":"J. A. L\u00f3pez\u2010Villanueva","orcid":"https://orcid.org/0000-0003-0334-0863"},"institutions":[{"id":"https://openalex.org/I173304897","display_name":"Universidad de Granada","ror":"https://ror.org/04njjy449","country_code":"ES","type":"education","lineage":["https://openalex.org/I173304897"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"J. A. L\u00f3pez-Villanueva","raw_affiliation_strings":["Departamento de Electr\u00f3nica y Tecnolog\u013aa de Computadores, Universidad de Granada, Facultad de Cieneias, Avd. Fuentenueva s/n"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Departamento de Electr\u00f3nica y Tecnolog\u013aa de Computadores, Universidad de Granada, Facultad de Cieneias, Avd. Fuentenueva s/n","institution_ids":["https://openalex.org/I173304897"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5042360201"],"corresponding_institution_ids":["https://openalex.org/I173304897"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":true,"cited_by_count":1,"citation_normalized_percentile":{"value":0.16832071,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":"8","issue":"1-4","first_page":"257","last_page":"260"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9988999962806702,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/velocity-overshoot","display_name":"Velocity overshoot","score":0.8789483308792114},{"id":"https://openalex.org/keywords/monte-carlo-method","display_name":"Monte Carlo method","score":0.647513747215271},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.6342028975486755},{"id":"https://openalex.org/keywords/saturation-velocity","display_name":"Saturation velocity","score":0.5874460339546204},{"id":"https://openalex.org/keywords/computational-physics","display_name":"Computational physics","score":0.5309706926345825},{"id":"https://openalex.org/keywords/electron-mobility","display_name":"Electron mobility","score":0.5249409675598145},{"id":"https://openalex.org/keywords/inversion","display_name":"Inversion (geology)","score":0.5242293477058411},{"id":"https://openalex.org/keywords/condensed-matter-physics","display_name":"Condensed matter physics","score":0.4996192455291748},{"id":"https://openalex.org/keywords/electron","display_name":"Electron","score":0.4853576719760895},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4653865396976471},{"id":"https://openalex.org/keywords/phonon-scattering","display_name":"Phonon scattering","score":0.4576919972896576},{"id":"https://openalex.org/keywords/drift-velocity","display_name":"Drift velocity","score":0.4492798447608948},{"id":"https://openalex.org/keywords/scattering","display_name":"Scattering","score":0.4152841567993164},{"id":"https://openalex.org/keywords/statistical-physics","display_name":"Statistical physics","score":0.4104064106941223},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.375274658203125},{"id":"https://openalex.org/keywords/phonon","display_name":"Phonon","score":0.33715111017227173},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.16341522336006165},{"id":"https://openalex.org/keywords/optics","display_name":"Optics","score":0.15165174007415771},{"id":"https://openalex.org/keywords/quantum-mechanics","display_name":"Quantum mechanics","score":0.14769533276557922},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.1398220658302307},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.11898595094680786}],"concepts":[{"id":"https://openalex.org/C2779364907","wikidata":"https://www.wikidata.org/wiki/Q2512560","display_name":"Velocity overshoot","level":3,"score":0.8789483308792114},{"id":"https://openalex.org/C19499675","wikidata":"https://www.wikidata.org/wiki/Q232207","display_name":"Monte Carlo method","level":2,"score":0.647513747215271},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.6342028975486755},{"id":"https://openalex.org/C151431374","wikidata":"https://www.wikidata.org/wiki/Q7426597","display_name":"Saturation velocity","level":4,"score":0.5874460339546204},{"id":"https://openalex.org/C30475298","wikidata":"https://www.wikidata.org/wiki/Q909554","display_name":"Computational physics","level":1,"score":0.5309706926345825},{"id":"https://openalex.org/C106782819","wikidata":"https://www.wikidata.org/wiki/Q6501076","display_name":"Electron mobility","level":2,"score":0.5249409675598145},{"id":"https://openalex.org/C1893757","wikidata":"https://www.wikidata.org/wiki/Q3653001","display_name":"Inversion (geology)","level":3,"score":0.5242293477058411},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.4996192455291748},{"id":"https://openalex.org/C147120987","wikidata":"https://www.wikidata.org/wiki/Q2225","display_name":"Electron","level":2,"score":0.4853576719760895},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4653865396976471},{"id":"https://openalex.org/C65053842","wikidata":"https://www.wikidata.org/wiki/Q7187311","display_name":"Phonon scattering","level":3,"score":0.4576919972896576},{"id":"https://openalex.org/C131751877","wikidata":"https://www.wikidata.org/wiki/Q909891","display_name":"Drift velocity","level":3,"score":0.4492798447608948},{"id":"https://openalex.org/C191486275","wikidata":"https://www.wikidata.org/wiki/Q210028","display_name":"Scattering","level":2,"score":0.4152841567993164},{"id":"https://openalex.org/C121864883","wikidata":"https://www.wikidata.org/wiki/Q677916","display_name":"Statistical physics","level":1,"score":0.4104064106941223},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.375274658203125},{"id":"https://openalex.org/C24169881","wikidata":"https://www.wikidata.org/wiki/Q186608","display_name":"Phonon","level":2,"score":0.33715111017227173},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.16341522336006165},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.15165174007415771},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.14769533276557922},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.1398220658302307},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.11898595094680786},{"id":"https://openalex.org/C105795698","wikidata":"https://www.wikidata.org/wiki/Q12483","display_name":"Statistics","level":1,"score":0.0},{"id":"https://openalex.org/C109007969","wikidata":"https://www.wikidata.org/wiki/Q749565","display_name":"Structural basin","level":2,"score":0.0},{"id":"https://openalex.org/C86803240","wikidata":"https://www.wikidata.org/wiki/Q420","display_name":"Biology","level":0,"score":0.0},{"id":"https://openalex.org/C151730666","wikidata":"https://www.wikidata.org/wiki/Q7205","display_name":"Paleontology","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1155/1998/94915","is_oa":true,"landing_page_url":"https://doi.org/10.1155/1998/94915","pdf_url":"https://downloads.hindawi.com/archive/1998/094915.pdf","source":{"id":"https://openalex.org/S81291924","display_name":"VLSI design","issn_l":"1026-7123","issn":["1026-7123","1065-514X","1563-5171"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319869","host_organization_name":"Hindawi Publishing Corporation","host_organization_lineage":["https://openalex.org/P4310319869"],"host_organization_lineage_names":["Hindawi Publishing Corporation"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"VLSI Design","raw_type":"journal-article"},{"id":"pmh:oai:digibug.ugr.es:10481/98131","is_oa":true,"landing_page_url":"https://hdl.handle.net/10481/98131","pdf_url":null,"source":{"id":"https://openalex.org/S4306400567","display_name":"Institutional Repository of the University of Granada (University of Granada)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I173304897","host_organization_name":"Universidad de Granada","host_organization_lineage":["https://openalex.org/I173304897"],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"journal article"}],"best_oa_location":{"id":"doi:10.1155/1998/94915","is_oa":true,"landing_page_url":"https://doi.org/10.1155/1998/94915","pdf_url":"https://downloads.hindawi.com/archive/1998/094915.pdf","source":{"id":"https://openalex.org/S81291924","display_name":"VLSI design","issn_l":"1026-7123","issn":["1026-7123","1065-514X","1563-5171"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319869","host_organization_name":"Hindawi Publishing Corporation","host_organization_lineage":["https://openalex.org/P4310319869"],"host_organization_lineage_names":["Hindawi Publishing Corporation"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"VLSI Design","raw_type":"journal-article"},"sustainable_development_goals":[{"score":0.8299999833106995,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2069295211.pdf","grobid_xml":"https://content.openalex.org/works/W2069295211.grobid-xml"},"referenced_works_count":5,"referenced_works":["https://openalex.org/W277224379","https://openalex.org/W2012116026","https://openalex.org/W2033231312","https://openalex.org/W2088811762","https://openalex.org/W4233562110"],"related_works":["https://openalex.org/W4243587197","https://openalex.org/W2001801768","https://openalex.org/W4239748387","https://openalex.org/W2000104029","https://openalex.org/W2195786792","https://openalex.org/W1593899322","https://openalex.org/W4308213914","https://openalex.org/W2128531959","https://openalex.org/W2160698600","https://openalex.org/W2069606515"],"abstract_inverted_index":{"Electron":[0],"transport":[1,42],"properties":[2],"in":[3,79],"SiC":[4,50],"quantized":[5],"inversion":[6,56],"layers":[7],"have":[8,63],"been":[9,20,64],"studied":[10],"by":[11],"means":[12],"of":[13,25,33,49],"a":[14,30],"Monte":[15],"Carlo":[16],"procedure.":[17],"It":[18],"has":[19],"observed":[21],"that":[22,70],"the":[23,34,38,46,67,94],"contribution":[24],"polaroptical":[26],"phonon":[27],"scattering":[28],"produces":[29],"significant":[31],"influence":[32],"effective\u2010electric":[35],"field":[36,41],"on":[37],"high":[39],"longitudinal":[40],"regime,":[43],"this":[44],"being":[45],"main":[47],"difference":[48],"with":[51],"respect":[52],"to":[53],"standard":[54],"Si":[55,80],"layers.":[57],"The":[58,82],"energy\u2010":[59],"and":[60,66],"momentum\u2010relaxation":[61],"times":[62],"calculated":[65],"results":[68],"suggest":[69],"electron":[71,83],"velocity":[72,96],"overshoot":[73],"effects":[74],"are":[75],"less":[76],"important":[77],"than":[78],"MOSFETs.":[81],"mobility":[84],"is":[85,97],"not":[86],"very":[87],"different":[88],"from":[89],"their":[90],"silicon":[91],"counterparts,":[92],"but":[93],"saturation":[95],"higher.":[98]},"counts_by_year":[{"year":2018,"cited_by_count":1}],"updated_date":"2026-05-21T06:26:12.895304","created_date":"2025-10-10T00:00:00"}