{"id":"https://openalex.org/W2142346273","doi":"https://doi.org/10.1155/1998/70460","title":"Beating in the RHEED Intensity Oscillationsduring Surfactant Mediated GaAsMolecular Beam Epitaxy: Process Physicsand Modeling","display_name":"Beating in the RHEED Intensity Oscillationsduring Surfactant Mediated GaAsMolecular Beam Epitaxy: Process Physicsand Modeling","publication_year":1998,"publication_date":"1998-01-01","ids":{"openalex":"https://openalex.org/W2142346273","doi":"https://doi.org/10.1155/1998/70460","mag":"2142346273"},"language":"en","primary_location":{"id":"doi:10.1155/1998/70460","is_oa":true,"landing_page_url":"https://doi.org/10.1155/1998/70460","pdf_url":null,"source":{"id":"https://openalex.org/S81291924","display_name":"VLSI design","issn_l":"1026-7123","issn":["1026-7123","1065-514X","1563-5171"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319869","host_organization_name":"Hindawi Publishing Corporation","host_organization_lineage":["https://openalex.org/P4310319869"],"host_organization_lineage_names":["Hindawi Publishing Corporation"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"VLSI Design","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"hybrid","oa_url":"https://doi.org/10.1155/1998/70460","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5010448498","display_name":"Vamsee K. Pamula","orcid":"https://orcid.org/0000-0002-2062-8634"},"institutions":[{"id":"https://openalex.org/I133999245","display_name":"University of Nevada, Las Vegas","ror":"https://ror.org/0406gha72","country_code":"US","type":"education","lineage":["https://openalex.org/I133999245"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Vamsee K. Pamula","raw_affiliation_strings":["Department of Electrical and Computer Engineering, University of Nevada, Las Vegas"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, University of Nevada, Las Vegas","institution_ids":["https://openalex.org/I133999245"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5013712373","display_name":"Rama Venkat","orcid":"https://orcid.org/0000-0001-5976-4468"},"institutions":[{"id":"https://openalex.org/I133999245","display_name":"University of Nevada, Las Vegas","ror":"https://ror.org/0406gha72","country_code":"US","type":"education","lineage":["https://openalex.org/I133999245"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"R. Venkat","raw_affiliation_strings":["Department of Electrical and Computer Engineering, University of Nevada, Las Vegas"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, University of Nevada, Las Vegas","institution_ids":["https://openalex.org/I133999245"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5010448498"],"corresponding_institution_ids":["https://openalex.org/I133999245"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.19616798,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"6","issue":"1-4","first_page":"405","last_page":"408"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T13418","display_name":"Photocathodes and Microchannel Plates","score":0.9939000010490417,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T13418","display_name":"Photocathodes and Microchannel Plates","score":0.9939000010490417,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.9925000071525574,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12039","display_name":"Electron and X-Ray Spectroscopy Techniques","score":0.9905999898910522,"subfield":{"id":"https://openalex.org/subfields/2508","display_name":"Surfaces, Coatings and Films"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/reflection-high-energy-electron-diffraction","display_name":"Reflection high-energy electron diffraction","score":0.9418766498565674},{"id":"https://openalex.org/keywords/electron-diffraction","display_name":"Electron diffraction","score":0.8073863387107849},{"id":"https://openalex.org/keywords/molecular-beam-epitaxy","display_name":"Molecular beam epitaxy","score":0.7569611072540283},{"id":"https://openalex.org/keywords/oscillation","display_name":"Oscillation (cell signaling)","score":0.683428168296814},{"id":"https://openalex.org/keywords/monolayer","display_name":"Monolayer","score":0.646267294883728},{"id":"https://openalex.org/keywords/reflection","display_name":"Reflection (computer programming)","score":0.5320098400115967},{"id":"https://openalex.org/keywords/intensity","display_name":"Intensity (physics)","score":0.5173156261444092},{"id":"https://openalex.org/keywords/diffraction","display_name":"Diffraction","score":0.5162056088447571},{"id":"https://openalex.org/keywords/epitaxy","display_name":"Epitaxy","score":0.4896896183490753},{"id":"https://openalex.org/keywords/electron","display_name":"Electron","score":0.46961742639541626},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.44702649116516113},{"id":"https://openalex.org/keywords/condensed-matter-physics","display_name":"Condensed matter physics","score":0.3681091070175171},{"id":"https://openalex.org/keywords/atomic-physics","display_name":"Atomic physics","score":0.351798951625824},{"id":"https://openalex.org/keywords/molecular-physics","display_name":"Molecular physics","score":0.3416869640350342},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.33091890811920166},{"id":"https://openalex.org/keywords/optics","display_name":"Optics","score":0.3233947157859802},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.2954649031162262},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.17214611172676086},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.11765643954277039},{"id":"https://openalex.org/keywords/nuclear-physics","display_name":"Nuclear physics","score":0.061103492975234985}],"concepts":[{"id":"https://openalex.org/C200096950","wikidata":"https://www.wikidata.org/wiki/Q455003","display_name":"Reflection high-energy electron diffraction","level":4,"score":0.9418766498565674},{"id":"https://openalex.org/C77557913","wikidata":"https://www.wikidata.org/wiki/Q864822","display_name":"Electron diffraction","level":3,"score":0.8073863387107849},{"id":"https://openalex.org/C3792809","wikidata":"https://www.wikidata.org/wiki/Q898542","display_name":"Molecular beam epitaxy","level":4,"score":0.7569611072540283},{"id":"https://openalex.org/C2778439541","wikidata":"https://www.wikidata.org/wiki/Q7106412","display_name":"Oscillation (cell signaling)","level":2,"score":0.683428168296814},{"id":"https://openalex.org/C7070889","wikidata":"https://www.wikidata.org/wiki/Q902488","display_name":"Monolayer","level":2,"score":0.646267294883728},{"id":"https://openalex.org/C65682993","wikidata":"https://www.wikidata.org/wiki/Q1056451","display_name":"Reflection (computer programming)","level":2,"score":0.5320098400115967},{"id":"https://openalex.org/C93038891","wikidata":"https://www.wikidata.org/wiki/Q1061524","display_name":"Intensity (physics)","level":2,"score":0.5173156261444092},{"id":"https://openalex.org/C207114421","wikidata":"https://www.wikidata.org/wiki/Q133900","display_name":"Diffraction","level":2,"score":0.5162056088447571},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.4896896183490753},{"id":"https://openalex.org/C147120987","wikidata":"https://www.wikidata.org/wiki/Q2225","display_name":"Electron","level":2,"score":0.46961742639541626},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.44702649116516113},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.3681091070175171},{"id":"https://openalex.org/C184779094","wikidata":"https://www.wikidata.org/wiki/Q26383","display_name":"Atomic physics","level":1,"score":0.351798951625824},{"id":"https://openalex.org/C41999313","wikidata":"https://www.wikidata.org/wiki/Q489328","display_name":"Molecular physics","level":1,"score":0.3416869640350342},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.33091890811920166},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.3233947157859802},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2954649031162262},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.17214611172676086},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.11765643954277039},{"id":"https://openalex.org/C185544564","wikidata":"https://www.wikidata.org/wiki/Q81197","display_name":"Nuclear physics","level":1,"score":0.061103492975234985},{"id":"https://openalex.org/C55493867","wikidata":"https://www.wikidata.org/wiki/Q7094","display_name":"Biochemistry","level":1,"score":0.0},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.0},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0}],"mesh":[],"locations_count":3,"locations":[{"id":"doi:10.1155/1998/70460","is_oa":true,"landing_page_url":"https://doi.org/10.1155/1998/70460","pdf_url":null,"source":{"id":"https://openalex.org/S81291924","display_name":"VLSI design","issn_l":"1026-7123","issn":["1026-7123","1065-514X","1563-5171"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319869","host_organization_name":"Hindawi Publishing Corporation","host_organization_lineage":["https://openalex.org/P4310319869"],"host_organization_lineage_names":["Hindawi Publishing Corporation"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"VLSI Design","raw_type":"journal-article"},{"id":"pmh:oai:digitalscholarship.unlv.edu:ece_fac_articles-1015","is_oa":false,"landing_page_url":"https://digitalscholarship.unlv.edu/ece_fac_articles/16","pdf_url":null,"source":{"id":"https://openalex.org/S4377196371","display_name":"Digital Scholarship - UNLV (University of Nevada Reno)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I134113660","host_organization_name":"University of Nevada, Reno","host_organization_lineage":["https://openalex.org/I134113660"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Electrical and Computer Engineering Faculty Publications","raw_type":"text"},{"id":"pmh:oai:oasis.library.unlv.edu:ece_fac_articles-1015","is_oa":false,"landing_page_url":"https://oasis.library.unlv.edu/ece_fac_articles/16","pdf_url":null,"source":{"id":"https://openalex.org/S4377196371","display_name":"Digital Scholarship - UNLV (University of Nevada Reno)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I134113660","host_organization_name":"University of Nevada, Reno","host_organization_lineage":["https://openalex.org/I134113660"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Electrical & Computer Engineering Faculty Research","raw_type":"article"}],"best_oa_location":{"id":"doi:10.1155/1998/70460","is_oa":true,"landing_page_url":"https://doi.org/10.1155/1998/70460","pdf_url":null,"source":{"id":"https://openalex.org/S81291924","display_name":"VLSI design","issn_l":"1026-7123","issn":["1026-7123","1065-514X","1563-5171"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319869","host_organization_name":"Hindawi Publishing Corporation","host_organization_lineage":["https://openalex.org/P4310319869"],"host_organization_lineage_names":["Hindawi Publishing Corporation"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"VLSI Design","raw_type":"journal-article"},"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.8100000023841858}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":3,"referenced_works":["https://openalex.org/W2045279709","https://openalex.org/W2076356609","https://openalex.org/W2086581262"],"related_works":["https://openalex.org/W1820058048","https://openalex.org/W2326000370","https://openalex.org/W2062436698","https://openalex.org/W2044856226","https://openalex.org/W2080290649","https://openalex.org/W1968266131","https://openalex.org/W1966548408","https://openalex.org/W2061854419","https://openalex.org/W1984615951","https://openalex.org/W2011076501"],"abstract_inverted_index":{"In":[0,73,89],"a":[1,28,53,79,103],"recent":[2],"work,":[3,75],"beating":[4,33,46],"in":[5],"the":[6,40,64,92,96,108,117,122,127,130,134,137,140,159],"reflection":[7],"high":[8],"energy":[9],"electron":[10,118],"diffraction":[11],"(RHEED)":[12],"intensity":[13],"oscillations":[14,142],"were":[15,151],"observed":[16,47],"during":[17],"molecular":[18],"beam":[19],"epitaxial":[20],"(MBE)":[21],"growth":[22,84],"of":[23,32,66,83,129,136,139],"GaAs":[24,93,109],"with":[25,44,69,155],"Sn":[26,41,71,97,113,123,144,149],"as":[27],"surfactant.":[29],"The":[30],"strength":[31],"is":[34,98,161],"found":[35],"to":[36,61,85,100,107],"be":[37],"dependent":[38],"on":[39,143],"submonolayer":[42,145],"coverage":[43],"strong":[45],"for":[48,147],"0.4":[49],"monolayer":[50],"coverage.":[51,72],"For":[52],"fixed":[54],"temperature":[55],"and":[56,126,153,158],"flux":[57],"ratio":[58],"(":[59],"Ga":[60],"As":[62],"),":[63],"period":[65],"oscillation":[67],"decreases":[68],"increasing":[70],"this":[74,87],"we":[76],"have":[77],"developed":[78],"rate":[80,105],"equation":[81],"model":[82],"investigate":[86],"phenomenon.":[88],"our":[90],"model,":[91],"covered":[94,111,124],"by":[95,112],"assumed":[99],"grow":[101],"at":[102],"faster":[104],"compared":[106,154],"not":[110],".":[114],"Assuming":[115],"that":[116],"beams":[119],"reflected":[120],"from":[121],"surface":[125,131],"rest":[128],"are":[132],"incoherent,":[133],"results":[135],"dependence":[138],"RHEED":[141],"coverages":[146,150],"various":[148],"obtained":[152],"experimental":[156],"data":[157],"agreement":[160],"good.":[162]},"counts_by_year":[],"updated_date":"2026-05-21T06:26:12.895304","created_date":"2025-10-10T00:00:00"}