{"id":"https://openalex.org/W2009630454","doi":"https://doi.org/10.1155/1998/61608","title":"Two\u2010dimensional Modelling of HEMTs Using Multigrids with Quantum Correction","display_name":"Two\u2010dimensional Modelling of HEMTs Using Multigrids with Quantum Correction","publication_year":1998,"publication_date":"1998-01-01","ids":{"openalex":"https://openalex.org/W2009630454","doi":"https://doi.org/10.1155/1998/61608","mag":"2009630454"},"language":"en","primary_location":{"id":"doi:10.1155/1998/61608","is_oa":true,"landing_page_url":"https://doi.org/10.1155/1998/61608","pdf_url":"https://downloads.hindawi.com/archive/1998/061608.pdf","source":{"id":"https://openalex.org/S81291924","display_name":"VLSI design","issn_l":"1026-7123","issn":["1026-7123","1065-514X","1563-5171"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319869","host_organization_name":"Hindawi Publishing Corporation","host_organization_lineage":["https://openalex.org/P4310319869"],"host_organization_lineage_names":["Hindawi Publishing Corporation"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"VLSI Design","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"hybrid","oa_url":"https://downloads.hindawi.com/archive/1998/061608.pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5056814746","display_name":"E. A. B. Cole","orcid":null},"institutions":[{"id":"https://openalex.org/I130828816","display_name":"University of Leeds","ror":"https://ror.org/024mrxd33","country_code":"GB","type":"education","lineage":["https://openalex.org/I130828816"]}],"countries":["GB"],"is_corresponding":true,"raw_author_name":"Eric A. B. Cole","raw_affiliation_strings":["Centre for Nano-Device Modelling, University of Leeds, UK","Department of Applied Mathematics, University of Leeds, UK"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Centre for Nano-Device Modelling, University of Leeds, UK","institution_ids":["https://openalex.org/I130828816"]},{"raw_affiliation_string":"Department of Applied Mathematics, University of Leeds, UK","institution_ids":["https://openalex.org/I130828816"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5006588841","display_name":"Tobias Boettcher","orcid":null},"institutions":[{"id":"https://openalex.org/I130828816","display_name":"University of Leeds","ror":"https://ror.org/024mrxd33","country_code":"GB","type":"education","lineage":["https://openalex.org/I130828816"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"Tobias Boettcher","raw_affiliation_strings":["Centre for Nano-Device Modelling, University of Leeds, UK","Department of Applied Mathematics, University of Leeds, UK","School of Electronic and Electrical Engineering, University of Leeds, UK"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Centre for Nano-Device Modelling, University of Leeds, UK","institution_ids":["https://openalex.org/I130828816"]},{"raw_affiliation_string":"Department of Applied Mathematics, University of Leeds, UK","institution_ids":["https://openalex.org/I130828816"]},{"raw_affiliation_string":"School of Electronic and Electrical Engineering, University of Leeds, UK","institution_ids":["https://openalex.org/I130828816"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5042506465","display_name":"C.M. Snowden","orcid":"https://orcid.org/0000-0002-5137-9116"},"institutions":[{"id":"https://openalex.org/I130828816","display_name":"University of Leeds","ror":"https://ror.org/024mrxd33","country_code":"GB","type":"education","lineage":["https://openalex.org/I130828816"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"Christopher M. Snowden","raw_affiliation_strings":["Centre for Nano-Device Modelling, University of Leeds, UK","School of Electronic and Electrical Engineering, University of Leeds, UK"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Centre for Nano-Device Modelling, University of Leeds, UK","institution_ids":["https://openalex.org/I130828816"]},{"raw_affiliation_string":"School of Electronic and Electrical Engineering, University of Leeds, UK","institution_ids":["https://openalex.org/I130828816"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5056814746"],"corresponding_institution_ids":["https://openalex.org/I130828816"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":true,"cited_by_count":4,"citation_normalized_percentile":{"value":0.08626792,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":"8","issue":"1-4","first_page":"29","last_page":"34"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.9983999729156494,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.9983999729156494,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9952999949455261,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9860000014305115,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/isothermal-process","display_name":"Isothermal process","score":0.7258279919624329},{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.6409767270088196},{"id":"https://openalex.org/keywords/multigrid-method","display_name":"Multigrid method","score":0.6201544404029846},{"id":"https://openalex.org/keywords/poissons-equation","display_name":"Poisson's equation","score":0.6139261722564697},{"id":"https://openalex.org/keywords/current-density","display_name":"Current density","score":0.5795340538024902},{"id":"https://openalex.org/keywords/poisson-distribution","display_name":"Poisson distribution","score":0.5662801861763},{"id":"https://openalex.org/keywords/current","display_name":"Current (fluid)","score":0.5429584383964539},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.48188310861587524},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.4578063189983368},{"id":"https://openalex.org/keywords/schr\u00f6dingers-cat","display_name":"Schr\u00f6dinger's cat","score":0.4519946873188019},{"id":"https://openalex.org/keywords/perpendicular","display_name":"Perpendicular","score":0.4461973011493683},{"id":"https://openalex.org/keywords/quantum","display_name":"Quantum","score":0.43398919701576233},{"id":"https://openalex.org/keywords/mathematical-analysis","display_name":"Mathematical analysis","score":0.41282349824905396},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.3494299650192261},{"id":"https://openalex.org/keywords/condensed-matter-physics","display_name":"Condensed matter physics","score":0.3483818471431732},{"id":"https://openalex.org/keywords/applied-mathematics","display_name":"Applied mathematics","score":0.3256474733352661},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.31374576687812805},{"id":"https://openalex.org/keywords/quantum-mechanics","display_name":"Quantum mechanics","score":0.26776403188705444},{"id":"https://openalex.org/keywords/geometry","display_name":"Geometry","score":0.2076416313648224},{"id":"https://openalex.org/keywords/differential-equation","display_name":"Differential equation","score":0.17405200004577637},{"id":"https://openalex.org/keywords/thermodynamics","display_name":"Thermodynamics","score":0.10657098889350891},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.09056481719017029},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.07792210578918457},{"id":"https://openalex.org/keywords/statistics","display_name":"Statistics","score":0.07495230436325073}],"concepts":[{"id":"https://openalex.org/C133347239","wikidata":"https://www.wikidata.org/wiki/Q486921","display_name":"Isothermal process","level":2,"score":0.7258279919624329},{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.6409767270088196},{"id":"https://openalex.org/C137119250","wikidata":"https://www.wikidata.org/wiki/Q1413101","display_name":"Multigrid method","level":3,"score":0.6201544404029846},{"id":"https://openalex.org/C96716743","wikidata":"https://www.wikidata.org/wiki/Q827688","display_name":"Poisson's equation","level":2,"score":0.6139261722564697},{"id":"https://openalex.org/C207740977","wikidata":"https://www.wikidata.org/wiki/Q234072","display_name":"Current density","level":2,"score":0.5795340538024902},{"id":"https://openalex.org/C100906024","wikidata":"https://www.wikidata.org/wiki/Q205692","display_name":"Poisson distribution","level":2,"score":0.5662801861763},{"id":"https://openalex.org/C148043351","wikidata":"https://www.wikidata.org/wiki/Q4456944","display_name":"Current (fluid)","level":2,"score":0.5429584383964539},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.48188310861587524},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.4578063189983368},{"id":"https://openalex.org/C194800363","wikidata":"https://www.wikidata.org/wiki/Q8588","display_name":"Schr\u00f6dinger's cat","level":2,"score":0.4519946873188019},{"id":"https://openalex.org/C199631012","wikidata":"https://www.wikidata.org/wiki/Q205034","display_name":"Perpendicular","level":2,"score":0.4461973011493683},{"id":"https://openalex.org/C84114770","wikidata":"https://www.wikidata.org/wiki/Q46344","display_name":"Quantum","level":2,"score":0.43398919701576233},{"id":"https://openalex.org/C134306372","wikidata":"https://www.wikidata.org/wiki/Q7754","display_name":"Mathematical analysis","level":1,"score":0.41282349824905396},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3494299650192261},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.3483818471431732},{"id":"https://openalex.org/C28826006","wikidata":"https://www.wikidata.org/wiki/Q33521","display_name":"Applied mathematics","level":1,"score":0.3256474733352661},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.31374576687812805},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.26776403188705444},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.2076416313648224},{"id":"https://openalex.org/C78045399","wikidata":"https://www.wikidata.org/wiki/Q11214","display_name":"Differential equation","level":2,"score":0.17405200004577637},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.10657098889350891},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.09056481719017029},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.07792210578918457},{"id":"https://openalex.org/C105795698","wikidata":"https://www.wikidata.org/wiki/Q12483","display_name":"Statistics","level":1,"score":0.07495230436325073},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0}],"mesh":[],"locations_count":3,"locations":[{"id":"doi:10.1155/1998/61608","is_oa":true,"landing_page_url":"https://doi.org/10.1155/1998/61608","pdf_url":"https://downloads.hindawi.com/archive/1998/061608.pdf","source":{"id":"https://openalex.org/S81291924","display_name":"VLSI design","issn_l":"1026-7123","issn":["1026-7123","1065-514X","1563-5171"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319869","host_organization_name":"Hindawi Publishing Corporation","host_organization_lineage":["https://openalex.org/P4310319869"],"host_organization_lineage_names":["Hindawi Publishing Corporation"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"VLSI Design","raw_type":"journal-article"},{"id":"pmh:oai:alma.44SUR_INST:11138854590002346","is_oa":false,"landing_page_url":"https://openresearch.surrey.ac.uk/esploro/outputs/journalArticle/Two-dimensional-modelling-of-HEMTs-using-multigrids/99512351502346","pdf_url":null,"source":{"id":"https://openalex.org/S4210197018","display_name":"View","issn_l":"2688-268X","issn":["2688-268X","2688-3988"],"is_oa":false,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310320595","host_organization_name":"Wiley","host_organization_lineage":["https://openalex.org/P4310320595"],"host_organization_lineage_names":["Wiley"],"type":"journal"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"text"},{"id":"pmh:oai:epubs.surrey.ac.uk:814244","is_oa":false,"landing_page_url":"http://epubs.surrey.ac.uk/814244/","pdf_url":null,"source":{"id":"https://openalex.org/S4306400680","display_name":"Surrey Research Insight Open Access (The University of Surrey)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I28290843","host_organization_name":"University of Surrey","host_organization_lineage":["https://openalex.org/I28290843"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"Article"}],"best_oa_location":{"id":"doi:10.1155/1998/61608","is_oa":true,"landing_page_url":"https://doi.org/10.1155/1998/61608","pdf_url":"https://downloads.hindawi.com/archive/1998/061608.pdf","source":{"id":"https://openalex.org/S81291924","display_name":"VLSI design","issn_l":"1026-7123","issn":["1026-7123","1065-514X","1563-5171"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319869","host_organization_name":"Hindawi Publishing Corporation","host_organization_lineage":["https://openalex.org/P4310319869"],"host_organization_lineage_names":["Hindawi Publishing Corporation"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"VLSI Design","raw_type":"journal-article"},"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2009630454.pdf","grobid_xml":"https://content.openalex.org/works/W2009630454.grobid-xml"},"referenced_works_count":1,"referenced_works":["https://openalex.org/W588157396"],"related_works":["https://openalex.org/W2077078424","https://openalex.org/W2182328658","https://openalex.org/W1519938374","https://openalex.org/W2356816331","https://openalex.org/W2307054062","https://openalex.org/W2344267562","https://openalex.org/W2054004413","https://openalex.org/W1632720046","https://openalex.org/W2042128780","https://openalex.org/W2041113042"],"abstract_inverted_index":{"The":[0],"two\u2010dimensional":[1],"multi\u2010layered":[2],"HEMT":[3],"is":[4,23,36,57,89],"modelled":[5],"isothermally":[6],"by":[7,41],"solving":[8,42],"the":[9,17,26,33,43,51,78,86],"Poisson":[10,27],"and":[11,28],"current":[12,29,79],"continuity":[13,30],"equations":[14,31],"consistently":[15],"with":[16],"Schr\u00f6dinger":[18,44],"equation.":[19],"A":[20,54,73],"multigrid":[21],"method":[22,75],"used":[24],"on":[25],"while":[32],"electron":[34],"density":[35,80],"calculated":[37],"at":[38],"each":[39],"level":[40],"equation":[45],"in":[46],"onedimensional":[47],"slices":[48],"perpendicular":[49],"to":[50,64,85],"layer":[52,97],"structure.":[53],"correction":[55],"factor":[56],"introduced":[58],"which":[59,81],"enables":[60],"relatively":[61],"accurate":[62],"solutions":[63],"be":[65,83],"obtained":[66],"using":[67,94],"a":[68,95],"low":[69],"number":[70],"of":[71],"eigensolutions.":[72],"novel":[74],"for":[76],"discretising":[77],"can":[82],"generalised":[84],"non\u2010isothermal":[87],"case":[88],"described.":[90],"Results":[91],"are":[92],"illustrated":[93],"two":[96],"AlGaAs\u2010GaAs":[98],"HEMT.":[99]},"counts_by_year":[{"year":2017,"cited_by_count":1}],"updated_date":"2026-05-21T06:26:12.895304","created_date":"2025-10-10T00:00:00"}