{"id":"https://openalex.org/W2041773756","doi":"https://doi.org/10.1155/1998/29629","title":"RF Performance of Si/SiGe MODFETs:A Simulation Study","display_name":"RF Performance of Si/SiGe MODFETs:A Simulation Study","publication_year":1998,"publication_date":"1998-01-01","ids":{"openalex":"https://openalex.org/W2041773756","doi":"https://doi.org/10.1155/1998/29629","mag":"2041773756"},"language":"en","primary_location":{"id":"doi:10.1155/1998/29629","is_oa":true,"landing_page_url":"https://doi.org/10.1155/1998/29629","pdf_url":"https://downloads.hindawi.com/archive/1998/029629.pdf","source":{"id":"https://openalex.org/S81291924","display_name":"VLSI design","issn_l":"1026-7123","issn":["1026-7123","1065-514X","1563-5171"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319869","host_organization_name":"Hindawi Publishing Corporation","host_organization_lineage":["https://openalex.org/P4310319869"],"host_organization_lineage_names":["Hindawi Publishing Corporation"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"VLSI Design","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"hybrid","oa_url":"https://downloads.hindawi.com/archive/1998/029629.pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5070060702","display_name":"S. Roy","orcid":"https://orcid.org/0000-0002-2238-9542"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"S. Roy","raw_affiliation_strings":["Nanoelectronics Research Centre, Devartment of Electronics and Electrical Engineering, Glasgow University, Glasgow"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Nanoelectronics Research Centre, Devartment of Electronics and Electrical Engineering, Glasgow University, Glasgow","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110740755","display_name":"A. Asenov","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"A. Asenov","raw_affiliation_strings":["Nanoelectronics Research Centre, Devartment of Electronics and Electrical Engineering, Glasgow University, Glasgow"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Nanoelectronics Research Centre, Devartment of Electronics and Electrical Engineering, Glasgow University, Glasgow","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5060159886","display_name":"S. Babiker","orcid":null},"institutions":[],"countries":[],"is_corresponding":true,"raw_author_name":"S. Babiker","raw_affiliation_strings":["Nanoelectronics Research Centre, Devartment of Electronics and Electrical Engineering, Glasgow University, Glasgow"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Nanoelectronics Research Centre, Devartment of Electronics and Electrical Engineering, Glasgow University, Glasgow","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5005198907","display_name":"John R. Barker","orcid":"https://orcid.org/0000-0001-9248-2470"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"J. R. Barker","raw_affiliation_strings":["Nanoelectronics Research Centre, Devartment of Electronics and Electrical Engineering, Glasgow University, Glasgow"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Nanoelectronics Research Centre, Devartment of Electronics and Electrical Engineering, Glasgow University, Glasgow","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5055179578","display_name":"S. P. Beaumont","orcid":"https://orcid.org/0000-0001-8517-2183"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"S. P. Beaumont","raw_affiliation_strings":["Nanoelectronics Research Centre, Devartment of Electronics and Electrical Engineering, Glasgow University, Glasgow"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Nanoelectronics Research Centre, Devartment of Electronics and Electrical Engineering, Glasgow University, Glasgow","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":["https://openalex.org/A5060159886"],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":true,"cited_by_count":0,"citation_normalized_percentile":{"value":0.14161247,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"8","issue":"1-4","first_page":"325","last_page":"330"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/velocity-overshoot","display_name":"Velocity overshoot","score":0.8403545618057251},{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.7683320045471191},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6437197923660278},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6429217457771301},{"id":"https://openalex.org/keywords/microwave","display_name":"Microwave","score":0.5640400648117065},{"id":"https://openalex.org/keywords/figure-of-merit","display_name":"Figure of merit","score":0.5388382077217102},{"id":"https://openalex.org/keywords/overshoot","display_name":"Overshoot (microwave communication)","score":0.4917450249195099},{"id":"https://openalex.org/keywords/noise","display_name":"Noise (video)","score":0.47685182094573975},{"id":"https://openalex.org/keywords/noise-figure","display_name":"Noise figure","score":0.4493159353733063},{"id":"https://openalex.org/keywords/contact-resistance","display_name":"Contact resistance","score":0.4456760883331299},{"id":"https://openalex.org/keywords/monte-carlo-method","display_name":"Monte Carlo method","score":0.3978020250797272},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.3496442139148712},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.32845795154571533},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.24005374312400818},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.1867152750492096},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.1854480803012848},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1729276478290558},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.1348171830177307},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.07852450013160706},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.0650978684425354},{"id":"https://openalex.org/keywords/quantum-mechanics","display_name":"Quantum mechanics","score":0.05748280882835388}],"concepts":[{"id":"https://openalex.org/C2779364907","wikidata":"https://www.wikidata.org/wiki/Q2512560","display_name":"Velocity overshoot","level":3,"score":0.8403545618057251},{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.7683320045471191},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6437197923660278},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6429217457771301},{"id":"https://openalex.org/C44838205","wikidata":"https://www.wikidata.org/wiki/Q127995","display_name":"Microwave","level":2,"score":0.5640400648117065},{"id":"https://openalex.org/C130277099","wikidata":"https://www.wikidata.org/wiki/Q3676605","display_name":"Figure of merit","level":2,"score":0.5388382077217102},{"id":"https://openalex.org/C2780323453","wikidata":"https://www.wikidata.org/wiki/Q7113957","display_name":"Overshoot (microwave communication)","level":2,"score":0.4917450249195099},{"id":"https://openalex.org/C99498987","wikidata":"https://www.wikidata.org/wiki/Q2210247","display_name":"Noise (video)","level":3,"score":0.47685182094573975},{"id":"https://openalex.org/C112806910","wikidata":"https://www.wikidata.org/wiki/Q746825","display_name":"Noise figure","level":4,"score":0.4493159353733063},{"id":"https://openalex.org/C123671423","wikidata":"https://www.wikidata.org/wiki/Q332329","display_name":"Contact resistance","level":3,"score":0.4456760883331299},{"id":"https://openalex.org/C19499675","wikidata":"https://www.wikidata.org/wiki/Q232207","display_name":"Monte Carlo method","level":2,"score":0.3978020250797272},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.3496442139148712},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.32845795154571533},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.24005374312400818},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.1867152750492096},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.1854480803012848},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1729276478290558},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.1348171830177307},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.07852450013160706},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0650978684425354},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.05748280882835388},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C115961682","wikidata":"https://www.wikidata.org/wiki/Q860623","display_name":"Image (mathematics)","level":2,"score":0.0},{"id":"https://openalex.org/C105795698","wikidata":"https://www.wikidata.org/wiki/Q12483","display_name":"Statistics","level":1,"score":0.0},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.0},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1155/1998/29629","is_oa":true,"landing_page_url":"https://doi.org/10.1155/1998/29629","pdf_url":"https://downloads.hindawi.com/archive/1998/029629.pdf","source":{"id":"https://openalex.org/S81291924","display_name":"VLSI design","issn_l":"1026-7123","issn":["1026-7123","1065-514X","1563-5171"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319869","host_organization_name":"Hindawi Publishing Corporation","host_organization_lineage":["https://openalex.org/P4310319869"],"host_organization_lineage_names":["Hindawi Publishing Corporation"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"VLSI Design","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.1155/1998/29629","is_oa":true,"landing_page_url":"https://doi.org/10.1155/1998/29629","pdf_url":"https://downloads.hindawi.com/archive/1998/029629.pdf","source":{"id":"https://openalex.org/S81291924","display_name":"VLSI design","issn_l":"1026-7123","issn":["1026-7123","1065-514X","1563-5171"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319869","host_organization_name":"Hindawi Publishing Corporation","host_organization_lineage":["https://openalex.org/P4310319869"],"host_organization_lineage_names":["Hindawi Publishing Corporation"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"VLSI Design","raw_type":"journal-article"},"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2041773756.pdf","grobid_xml":"https://content.openalex.org/works/W2041773756.grobid-xml"},"referenced_works_count":6,"referenced_works":["https://openalex.org/W1966222594","https://openalex.org/W2046617661","https://openalex.org/W2081695894","https://openalex.org/W2121682905","https://openalex.org/W2137173887","https://openalex.org/W2494575927"],"related_works":["https://openalex.org/W2342281165","https://openalex.org/W1998472806","https://openalex.org/W3151445257","https://openalex.org/W2016005853","https://openalex.org/W2388306591","https://openalex.org/W2532762275","https://openalex.org/W2540727651","https://openalex.org/W2049563694","https://openalex.org/W2538947270","https://openalex.org/W2122295865"],"abstract_inverted_index":{"The":[0],"microwave":[1],"performance":[2,116],"potential":[3],"of":[4,14,54,65,114,118],"Si/SiGe":[5],"pseudomorphic":[6,18,120],"MODFETs":[7],"are":[8],"studied,":[9],"in":[10,85,98],"comparison":[11],"to":[12,26,45,96],"state":[13],"the":[15,47,51,63,76,83,115,119],"art":[16],"InGaAs":[17],"HEMTs.":[19],"Both":[20,70],"devices":[21,71],"have":[22],"equivalent":[23],"structures":[24],"corresponding":[25],"a":[27,105],"physical":[28],"HEMT":[29],"used":[30],"for":[31],"calibration.":[32],"We":[33],"use":[34],"an":[35],"RF":[36,52],"analysis":[37],"technique":[38],"based":[39],"on":[40,108],"transient":[41],"Monte":[42],"Carlo":[43],"simulations":[44],"estimate":[46],"intrinsic":[48],"noise":[49,86],"figures,":[50],"figures":[53,87],"merit":[55],"f":[56,59,89,102],"T":[57,90],"and":[58,62,67,88],"max":[60,103],",":[61],"effect":[64],"contact":[66,110],"gate":[68,77],"resistances.":[69],"exhibit":[72],"velocity":[73],"overshoot":[74],"below":[75],"region.":[78],"It":[79],"is":[80],"shown":[81],"that":[82],"difference":[84],"values":[91],"can":[92],"be":[93],"mainly":[94],"attributed":[95],"differences":[97],"device":[99,109],"channel":[100],"velocity,":[101],"exhibits":[104],"strong":[106],"dependence":[107],"resistance,":[111],"eroding":[112],"some":[113],"advantage":[117],"HEMT.":[121]},"counts_by_year":[],"updated_date":"2026-05-21T06:26:12.895304","created_date":"2025-10-10T00:00:00"}