{"id":"https://openalex.org/W2092084147","doi":"https://doi.org/10.1155/1998/27636","title":"Plasma Process Modeling for Integrated CircuitsManufacturing","display_name":"Plasma Process Modeling for Integrated CircuitsManufacturing","publication_year":1998,"publication_date":"1998-01-01","ids":{"openalex":"https://openalex.org/W2092084147","doi":"https://doi.org/10.1155/1998/27636","mag":"2092084147"},"language":"en","primary_location":{"id":"doi:10.1155/1998/27636","is_oa":true,"landing_page_url":"https://doi.org/10.1155/1998/27636","pdf_url":"https://downloads.hindawi.com/archive/1998/027636.pdf","source":{"id":"https://openalex.org/S81291924","display_name":"VLSI design","issn_l":"1026-7123","issn":["1026-7123","1065-514X","1563-5171"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319869","host_organization_name":"Hindawi Publishing Corporation","host_organization_lineage":["https://openalex.org/P4310319869"],"host_organization_lineage_names":["Hindawi Publishing Corporation"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"VLSI Design","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"hybrid","oa_url":"https://downloads.hindawi.com/archive/1998/027636.pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5010735432","display_name":"M. Meyyappan","orcid":"https://orcid.org/0000-0001-9202-412X"},"institutions":[],"countries":[],"is_corresponding":true,"raw_author_name":"M. Meyyappan","raw_affiliation_strings":["Scientific Research Associates, Inc. P.O. Box 1058"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Scientific Research Associates, Inc. P.O. Box 1058","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5062370303","display_name":"T. R. Govindan","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"T. R. Govindan","raw_affiliation_strings":["Scientific Research Associates, Inc. P.O. Box 1058"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Scientific Research Associates, Inc. P.O. Box 1058","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5010735432"],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":true,"cited_by_count":0,"citation_normalized_percentile":{"value":0.18853703,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"6","issue":"1-4","first_page":"409","last_page":"412"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10781","display_name":"Plasma Diagnostics and Applications","score":0.9408000111579895,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10781","display_name":"Plasma Diagnostics and Applications","score":0.9408000111579895,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/plasma","display_name":"Plasma","score":0.6951062679290771},{"id":"https://openalex.org/keywords/etching","display_name":"Etching (microfabrication)","score":0.5855182409286499},{"id":"https://openalex.org/keywords/flux","display_name":"Flux (metallurgy)","score":0.526168704032898},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5256591439247131},{"id":"https://openalex.org/keywords/process","display_name":"Process (computing)","score":0.5234581828117371},{"id":"https://openalex.org/keywords/deposition","display_name":"Deposition (geology)","score":0.5168755054473877},{"id":"https://openalex.org/keywords/plasma-etching","display_name":"Plasma etching","score":0.5084332823753357},{"id":"https://openalex.org/keywords/ion","display_name":"Ion","score":0.45105424523353577},{"id":"https://openalex.org/keywords/cad","display_name":"CAD","score":0.4310517907142639},{"id":"https://openalex.org/keywords/integrated-circuit","display_name":"Integrated circuit","score":0.41279900074005127},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3550427556037903},{"id":"https://openalex.org/keywords/nuclear-engineering","display_name":"Nuclear engineering","score":0.3381379544734955},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.3040578365325928},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.2501850128173828},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.22411179542541504},{"id":"https://openalex.org/keywords/engineering-drawing","display_name":"Engineering drawing","score":0.20148006081581116},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.16046440601348877},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.15340778231620789},{"id":"https://openalex.org/keywords/nuclear-physics","display_name":"Nuclear physics","score":0.14048010110855103},{"id":"https://openalex.org/keywords/metallurgy","display_name":"Metallurgy","score":0.1018441915512085},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.07320553064346313},{"id":"https://openalex.org/keywords/geology","display_name":"Geology","score":0.059200167655944824}],"concepts":[{"id":"https://openalex.org/C82706917","wikidata":"https://www.wikidata.org/wiki/Q10251","display_name":"Plasma","level":2,"score":0.6951062679290771},{"id":"https://openalex.org/C100460472","wikidata":"https://www.wikidata.org/wiki/Q2368605","display_name":"Etching (microfabrication)","level":3,"score":0.5855182409286499},{"id":"https://openalex.org/C68709404","wikidata":"https://www.wikidata.org/wiki/Q1134475","display_name":"Flux (metallurgy)","level":2,"score":0.526168704032898},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5256591439247131},{"id":"https://openalex.org/C98045186","wikidata":"https://www.wikidata.org/wiki/Q205663","display_name":"Process (computing)","level":2,"score":0.5234581828117371},{"id":"https://openalex.org/C64297162","wikidata":"https://www.wikidata.org/wiki/Q1987070","display_name":"Deposition (geology)","level":3,"score":0.5168755054473877},{"id":"https://openalex.org/C107187091","wikidata":"https://www.wikidata.org/wiki/Q2392011","display_name":"Plasma etching","level":4,"score":0.5084332823753357},{"id":"https://openalex.org/C145148216","wikidata":"https://www.wikidata.org/wiki/Q36496","display_name":"Ion","level":2,"score":0.45105424523353577},{"id":"https://openalex.org/C194789388","wikidata":"https://www.wikidata.org/wiki/Q17855283","display_name":"CAD","level":2,"score":0.4310517907142639},{"id":"https://openalex.org/C530198007","wikidata":"https://www.wikidata.org/wiki/Q80831","display_name":"Integrated circuit","level":2,"score":0.41279900074005127},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3550427556037903},{"id":"https://openalex.org/C116915560","wikidata":"https://www.wikidata.org/wiki/Q83504","display_name":"Nuclear engineering","level":1,"score":0.3381379544734955},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.3040578365325928},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.2501850128173828},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.22411179542541504},{"id":"https://openalex.org/C199639397","wikidata":"https://www.wikidata.org/wiki/Q1788588","display_name":"Engineering drawing","level":1,"score":0.20148006081581116},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.16046440601348877},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.15340778231620789},{"id":"https://openalex.org/C185544564","wikidata":"https://www.wikidata.org/wiki/Q81197","display_name":"Nuclear physics","level":1,"score":0.14048010110855103},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.1018441915512085},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.07320553064346313},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.059200167655944824},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0},{"id":"https://openalex.org/C2816523","wikidata":"https://www.wikidata.org/wiki/Q180184","display_name":"Sediment","level":2,"score":0.0},{"id":"https://openalex.org/C151730666","wikidata":"https://www.wikidata.org/wiki/Q7205","display_name":"Paleontology","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1155/1998/27636","is_oa":true,"landing_page_url":"https://doi.org/10.1155/1998/27636","pdf_url":"https://downloads.hindawi.com/archive/1998/027636.pdf","source":{"id":"https://openalex.org/S81291924","display_name":"VLSI design","issn_l":"1026-7123","issn":["1026-7123","1065-514X","1563-5171"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319869","host_organization_name":"Hindawi Publishing Corporation","host_organization_lineage":["https://openalex.org/P4310319869"],"host_organization_lineage_names":["Hindawi Publishing Corporation"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"VLSI Design","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.1155/1998/27636","is_oa":true,"landing_page_url":"https://doi.org/10.1155/1998/27636","pdf_url":"https://downloads.hindawi.com/archive/1998/027636.pdf","source":{"id":"https://openalex.org/S81291924","display_name":"VLSI design","issn_l":"1026-7123","issn":["1026-7123","1065-514X","1563-5171"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319869","host_organization_name":"Hindawi Publishing Corporation","host_organization_lineage":["https://openalex.org/P4310319869"],"host_organization_lineage_names":["Hindawi Publishing Corporation"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"VLSI Design","raw_type":"journal-article"},"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.8399999737739563}],"awards":[],"funders":[],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2092084147.pdf","grobid_xml":"https://content.openalex.org/works/W2092084147.grobid-xml"},"referenced_works_count":1,"referenced_works":["https://openalex.org/W1508157396"],"related_works":["https://openalex.org/W2035159056","https://openalex.org/W4385893457","https://openalex.org/W2157530652","https://openalex.org/W2162159501","https://openalex.org/W2081447987","https://openalex.org/W2093286625","https://openalex.org/W4249204785","https://openalex.org/W2044493643","https://openalex.org/W2024255856","https://openalex.org/W2149580532"],"abstract_inverted_index":{"A":[0],"reactor":[1],"model":[2],"for":[3],"plasma\u2010based":[4],"deposition":[5],"and":[6,21],"etching":[7],"is":[8],"presented.":[9],"Two\u2010dimensional":[10],"results":[11],"are":[12,30],"discussed":[13],"in":[14],"terms":[15],"of":[16],"plasma":[17],"density,":[18],"ion":[19,22],"flux,":[20],"energy.":[23],"Approaches":[24],"to":[25],"develop":[26],"rapid":[27],"CAD\u2010type":[28],"models":[29],"discussed.":[31]},"counts_by_year":[],"updated_date":"2026-05-21T06:26:12.895304","created_date":"2025-10-10T00:00:00"}