{"id":"https://openalex.org/W2055191697","doi":"https://doi.org/10.1147/rd.242.0235","title":"Properties of AuIn<sub>2</sub> Resistors for Josephson Integrated Circuits","display_name":"Properties of AuIn<sub>2</sub> Resistors for Josephson Integrated Circuits","publication_year":1980,"publication_date":"1980-03-01","ids":{"openalex":"https://openalex.org/W2055191697","doi":"https://doi.org/10.1147/rd.242.0235","mag":"2055191697"},"language":"en","primary_location":{"id":"doi:10.1147/rd.242.0235","is_oa":false,"landing_page_url":"https://doi.org/10.1147/rd.242.0235","pdf_url":null,"source":{"id":"https://openalex.org/S4210219925","display_name":"IBM Journal of Research and Development","issn_l":"0018-8646","issn":["0018-8646","2151-8556"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320652","host_organization_name":"IBM","host_organization_lineage":["https://openalex.org/P4310320652"],"host_organization_lineage_names":["IBM"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IBM Journal of Research and Development","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5079159747","display_name":"C. J. Kircher","orcid":null},"institutions":[{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"C. J. Kircher","raw_affiliation_strings":["IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598, USA","IBM Thomas J. Watson Research Center, Yorktown Heights, New York"],"affiliations":[{"raw_affiliation_string":"IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598, USA","institution_ids":["https://openalex.org/I4210114115"]},{"raw_affiliation_string":"IBM Thomas J. Watson Research Center, Yorktown Heights, New York","institution_ids":["https://openalex.org/I4210114115"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5102777392","display_name":"S. K. Lahiri","orcid":"https://orcid.org/0009-0004-1930-8977"},"institutions":[{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"S. K. Lahiri","raw_affiliation_strings":["IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598, USA","IBM Thomas J. Watson Research Center, Yorktown Heights, New York"],"affiliations":[{"raw_affiliation_string":"IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598, USA","institution_ids":["https://openalex.org/I4210114115"]},{"raw_affiliation_string":"IBM Thomas J. Watson Research Center, Yorktown Heights, New York","institution_ids":["https://openalex.org/I4210114115"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5079159747"],"corresponding_institution_ids":["https://openalex.org/I4210114115"],"apc_list":null,"apc_paid":null,"fwci":1.7901,"has_fulltext":false,"cited_by_count":22,"citation_normalized_percentile":{"value":0.82844529,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":99},"biblio":{"volume":"24","issue":"2","first_page":"235","last_page":"242"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T13531","display_name":"Surface and Thin Film Phenomena","score":0.9987000226974487,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12588","display_name":"Electronic and Structural Properties of Oxides","score":0.9973000288009644,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/resistor","display_name":"Resistor","score":0.7833856344223022},{"id":"https://openalex.org/keywords/electrical-resistivity-and-conductivity","display_name":"Electrical resistivity and conductivity","score":0.7338670492172241},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5607904195785522},{"id":"https://openalex.org/keywords/analytical-chemistry","display_name":"Analytical Chemistry (journal)","score":0.4815559685230255},{"id":"https://openalex.org/keywords/grain-size","display_name":"Grain size","score":0.43690264225006104},{"id":"https://openalex.org/keywords/microstructure","display_name":"Microstructure","score":0.4259113669395447},{"id":"https://openalex.org/keywords/mineralogy","display_name":"Mineralogy","score":0.33533090353012085},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.26857465505599976},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.2669721245765686},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.2285458743572235},{"id":"https://openalex.org/keywords/organic-chemistry","display_name":"Organic chemistry","score":0.12686797976493835},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.07256141304969788}],"concepts":[{"id":"https://openalex.org/C137488568","wikidata":"https://www.wikidata.org/wiki/Q5321","display_name":"Resistor","level":3,"score":0.7833856344223022},{"id":"https://openalex.org/C69990965","wikidata":"https://www.wikidata.org/wiki/Q65402698","display_name":"Electrical resistivity and conductivity","level":2,"score":0.7338670492172241},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5607904195785522},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.4815559685230255},{"id":"https://openalex.org/C192191005","wikidata":"https://www.wikidata.org/wiki/Q466491","display_name":"Grain size","level":2,"score":0.43690264225006104},{"id":"https://openalex.org/C87976508","wikidata":"https://www.wikidata.org/wiki/Q1498213","display_name":"Microstructure","level":2,"score":0.4259113669395447},{"id":"https://openalex.org/C199289684","wikidata":"https://www.wikidata.org/wiki/Q83353","display_name":"Mineralogy","level":1,"score":0.33533090353012085},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.26857465505599976},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.2669721245765686},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.2285458743572235},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.12686797976493835},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.07256141304969788},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1147/rd.242.0235","is_oa":false,"landing_page_url":"https://doi.org/10.1147/rd.242.0235","pdf_url":null,"source":{"id":"https://openalex.org/S4210219925","display_name":"IBM Journal of Research and Development","issn_l":"0018-8646","issn":["0018-8646","2151-8556"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320652","host_organization_name":"IBM","host_organization_lineage":["https://openalex.org/P4310320652"],"host_organization_lineage_names":["IBM"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IBM Journal of Research and Development","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":4,"referenced_works":["https://openalex.org/W1489718736","https://openalex.org/W1534790618","https://openalex.org/W2031498913","https://openalex.org/W3020833317"],"related_works":["https://openalex.org/W3200817179","https://openalex.org/W1960166976","https://openalex.org/W2058940780","https://openalex.org/W1992708211","https://openalex.org/W2380067098","https://openalex.org/W1548152478","https://openalex.org/W2137172615","https://openalex.org/W2106247205","https://openalex.org/W2543503210","https://openalex.org/W2020186742"],"abstract_inverted_index":{"The":[0,30,48,168,269],"influences":[1],"of":[2,12,97,106,114,137,162,173,211,213],"film":[3,145],"thickness":[4,72,102],"and":[5,10,37,62,147,186,215,219,249],"composition":[6,92],"on":[7],"the":[8,71,91,100,134,154,171,182,197,205,217,280],"resistivity":[9,49,172,206],"microstructure":[11],"AuIn":[13,107,138,174],"<inf":[14,108,139,175],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[15,68,109,140,176,243,247,262,266],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</inf>":[16,110,141,177],"films,":[17],"which":[18],"are":[19],"used":[20,202],"as":[21,65,90,274,279],"resistors":[22],"in":[23,99,116,121,127],"Josephson":[24],"integrated":[25],"circuits,":[26],"have":[27],"been":[28],"investigated.":[29],"films":[31,61,142,158,178],"were":[32,87,179],"prepared":[33],"by":[34],"evaporating":[35],"Au":[36],"In":[38],"layers":[39],"onto":[40],"SiO-coated":[41],"Si":[42],"wafers":[43],"held":[44],"at":[45,50],"348":[46],"K.":[47],"4.2":[51],"K":[52],"was":[53,93,194,225],"found":[54,195],"to":[55,63,82,203],"be":[56,201],"\u22485":[57],"\u00b5\u03a9-cm":[58],"for":[59,153,160,208,227],"40-nm-thick":[60],"vary":[64],"\u2248d":[66],"<sup":[67,242,246,261,265],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">\u22120.76</sup>":[69],"over":[70],"range":[73,210],"30\u2013250":[74],"nm.":[75],"Corresponding":[76],"sheet":[77],"resistances":[78],"ranged":[79],"from":[80,104],"0.05":[81],"2":[83],"\u03a9/\u25a1.":[84],"Resistivity":[85],"changes":[86],"also":[88],"observed":[89],"altered.":[94],"A":[95,118],"decrease":[96,126],"\u224810%":[98],"In/Au":[101,122,156,166],"ratio":[103,123,157],"that":[105,133,196],"produced":[111,124],"an":[112],"increase":[113,120],"\u224850%":[115],"resistivity.":[117,128],"similar":[119],"\u226410%":[125],"Electron":[129],"microscopy":[130],"analysis":[131],"revealed":[132],"grain":[135,189,276],"size":[136],"increases":[143],"with":[144],"thickness,":[146],"is":[148,272],"approximately":[149],"two":[150],"times":[151],"smaller":[152],"low":[155],"than":[159],"those":[161],"nominal":[163],"or":[164],"larger":[165],"ratios.":[167],"factors":[169],"governing":[170],"analyzed":[180],"using":[181],"Fuchs":[183],"surface":[184],"scattering":[185,191,278,282],"Mayadas-Shatzkes":[187],"(M-S)":[188],"boundary":[190,277],"theories.":[192],"It":[193],"M-S":[198],"theory":[199],"can":[200],"explain":[204],"data":[207],"a":[209],"choices":[212],"r":[214,231,250],"p,":[216],"grain-boundary-reflection":[218],"surface-reflection":[220],"coefficients,":[221],"respectively.":[222],"Reasonable":[223],"agreement":[224],"obtained":[226],"parameter":[228],"values":[229],"between":[230],"=":[232,235,238,251,254,257],"0.31,":[233],"p":[234,253],"0,":[236],"\u03c1l":[237,256],"3":[239],"\u00d7":[240,259],"10":[241,260],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">\u221211</sup>":[244,263],"\u03a9-cm":[245,264],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</sup>":[248,267],"0.74,":[252],"1,":[255],"0.8":[258],".":[268],"available":[270],"evidence":[271],"interpreted":[273],"favoring":[275],"dominant":[281],"mechanism.":[283]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2015,"cited_by_count":1},{"year":2012,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}