{"id":"https://openalex.org/W2057756761","doi":"https://doi.org/10.1145/2483028.2483078","title":"Variability evaluation of feedback circuits used in nanoelectronic Memristive/CMOS circuits","display_name":"Variability evaluation of feedback circuits used in nanoelectronic Memristive/CMOS circuits","publication_year":2013,"publication_date":"2013-05-02","ids":{"openalex":"https://openalex.org/W2057756761","doi":"https://doi.org/10.1145/2483028.2483078","mag":"2057756761"},"language":"en","primary_location":{"id":"doi:10.1145/2483028.2483078","is_oa":false,"landing_page_url":"https://doi.org/10.1145/2483028.2483078","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the 23rd ACM international conference on Great lakes symposium on VLSI","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5033971238","display_name":"Arne Heittmann","orcid":null},"institutions":[{"id":"https://openalex.org/I887968799","display_name":"RWTH Aachen University","ror":"https://ror.org/04xfq0f34","country_code":"DE","type":"education","lineage":["https://openalex.org/I887968799"]}],"countries":["DE"],"is_corresponding":true,"raw_author_name":"Arne Heittmann","raw_affiliation_strings":["RWTH Aachen University, Aachen, Germany","RWTH-Aachen University, Aachen, Germany"],"affiliations":[{"raw_affiliation_string":"RWTH Aachen University, Aachen, Germany","institution_ids":["https://openalex.org/I887968799"]},{"raw_affiliation_string":"RWTH-Aachen University, Aachen, Germany","institution_ids":["https://openalex.org/I887968799"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5103870395","display_name":"Tobias G. Noll","orcid":null},"institutions":[{"id":"https://openalex.org/I887968799","display_name":"RWTH Aachen University","ror":"https://ror.org/04xfq0f34","country_code":"DE","type":"education","lineage":["https://openalex.org/I887968799"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Tobias G. Noll","raw_affiliation_strings":["RWTH Aachen University, Aachen, Germany","RWTH-Aachen University, Aachen, Germany"],"affiliations":[{"raw_affiliation_string":"RWTH Aachen University, Aachen, Germany","institution_ids":["https://openalex.org/I887968799"]},{"raw_affiliation_string":"RWTH-Aachen University, Aachen, Germany","institution_ids":["https://openalex.org/I887968799"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5033971238"],"corresponding_institution_ids":["https://openalex.org/I887968799"],"apc_list":null,"apc_paid":null,"fwci":0.2402,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.61685741,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"137","last_page":"142"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9975000023841858,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11601","display_name":"Neuroscience and Neural Engineering","score":0.9969000220298767,"subfield":{"id":"https://openalex.org/subfields/2804","display_name":"Cellular and Molecular Neuroscience"},"field":{"id":"https://openalex.org/fields/28","display_name":"Neuroscience"},"domain":{"id":"https://openalex.org/domains/1","display_name":"Life Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/nmos-logic","display_name":"NMOS logic","score":0.6927651762962341},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.6562407612800598},{"id":"https://openalex.org/keywords/resistor","display_name":"Resistor","score":0.630774199962616},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.6091815829277039},{"id":"https://openalex.org/keywords/spice","display_name":"Spice","score":0.6044588685035706},{"id":"https://openalex.org/keywords/monte-carlo-method","display_name":"Monte Carlo method","score":0.6040666103363037},{"id":"https://openalex.org/keywords/resistive-random-access-memory","display_name":"Resistive random-access memory","score":0.5269138216972351},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.5106821656227112},{"id":"https://openalex.org/keywords/kinetic-monte-carlo","display_name":"Kinetic Monte Carlo","score":0.5071771144866943},{"id":"https://openalex.org/keywords/conductance","display_name":"Conductance","score":0.4912850260734558},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.45647484064102173},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3813597559928894},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.31698423624038696},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.21150779724121094},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.17246806621551514},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.16199231147766113},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.1357443928718567},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.12014222145080566},{"id":"https://openalex.org/keywords/condensed-matter-physics","display_name":"Condensed matter physics","score":0.09819063544273376}],"concepts":[{"id":"https://openalex.org/C197162436","wikidata":"https://www.wikidata.org/wiki/Q83908","display_name":"NMOS logic","level":4,"score":0.6927651762962341},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.6562407612800598},{"id":"https://openalex.org/C137488568","wikidata":"https://www.wikidata.org/wiki/Q5321","display_name":"Resistor","level":3,"score":0.630774199962616},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6091815829277039},{"id":"https://openalex.org/C2780077345","wikidata":"https://www.wikidata.org/wiki/Q16891888","display_name":"Spice","level":2,"score":0.6044588685035706},{"id":"https://openalex.org/C19499675","wikidata":"https://www.wikidata.org/wiki/Q232207","display_name":"Monte Carlo method","level":2,"score":0.6040666103363037},{"id":"https://openalex.org/C182019814","wikidata":"https://www.wikidata.org/wiki/Q1143830","display_name":"Resistive random-access memory","level":3,"score":0.5269138216972351},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5106821656227112},{"id":"https://openalex.org/C45786274","wikidata":"https://www.wikidata.org/wiki/Q3333611","display_name":"Kinetic Monte Carlo","level":3,"score":0.5071771144866943},{"id":"https://openalex.org/C121932024","wikidata":"https://www.wikidata.org/wiki/Q5159376","display_name":"Conductance","level":2,"score":0.4912850260734558},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.45647484064102173},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3813597559928894},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.31698423624038696},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.21150779724121094},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.17246806621551514},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.16199231147766113},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.1357443928718567},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.12014222145080566},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.09819063544273376},{"id":"https://openalex.org/C105795698","wikidata":"https://www.wikidata.org/wiki/Q12483","display_name":"Statistics","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1145/2483028.2483078","is_oa":false,"landing_page_url":"https://doi.org/10.1145/2483028.2483078","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the 23rd ACM international conference on Great lakes symposium on VLSI","raw_type":"proceedings-article"},{"id":"pmh:oai:publications.rwth-aachen.de:226702","is_oa":false,"landing_page_url":"http://publications.rwth-aachen.de/search?p=id:%22RWTH-CONV-204122%22","pdf_url":null,"source":{"id":"https://openalex.org/S4306401362","display_name":"RWTH Publications (RWTH Aachen)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I887968799","host_organization_name":"RWTH Aachen University","host_organization_lineage":["https://openalex.org/I887968799"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"The proceedings of the 2013 ACM international conference of the Great Lakes Symposium on VLSI 2013 : May 2 - 3, 2013, Paris, France / Jos\u00e9 L. Ayala<br/>2013 ACM international conference of the Great Lakes Symposium on VLSI 2013, Paris, France, 2013-05-02 - 2013-05-03","raw_type":"info:eu-repo/semantics/publishedVersion"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.5699999928474426,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":19,"referenced_works":["https://openalex.org/W1969282681","https://openalex.org/W2007898123","https://openalex.org/W2009604146","https://openalex.org/W2028868915","https://openalex.org/W2031039947","https://openalex.org/W2032302252","https://openalex.org/W2032567996","https://openalex.org/W2067242107","https://openalex.org/W2074357625","https://openalex.org/W2093122352","https://openalex.org/W2120544688","https://openalex.org/W2120557145","https://openalex.org/W2142704184","https://openalex.org/W2157061035","https://openalex.org/W2157729981","https://openalex.org/W2157926305","https://openalex.org/W2165930573","https://openalex.org/W2166432809","https://openalex.org/W4243832265"],"related_works":["https://openalex.org/W2217098757","https://openalex.org/W3208688275","https://openalex.org/W2088771128","https://openalex.org/W2204879205","https://openalex.org/W3195722497","https://openalex.org/W2368486130","https://openalex.org/W2051630841","https://openalex.org/W1980301972","https://openalex.org/W2167784970","https://openalex.org/W2587448511"],"abstract_inverted_index":{"One":[0],"significant":[1],"challenge":[2],"in":[3,140,148],"the":[4,22,25,37,56,78,97,101,117,137,163,170,173,181,193],"design":[5],"of":[6,27,80,172,192],"nanoelectronic":[7],"circuits":[8],"which":[9,33,76,111],"comprise":[10],"resistive":[11],"switches":[12],"(RS)":[13],"beyond":[14],"10":[15],"nm":[16],"feature":[17],"size":[18],"is":[19,44,185],"to":[20,94,142,160,168],"control":[21],"variability":[23,43,143],"and":[24,132,180,184],"irreproducibility":[26],"RS":[28,179,194],"device":[29,183],"conductance.":[30],"For":[31],"RS,":[32],"are":[34],"based":[35],"on":[36,60,116],"electrochemical":[38,53,82,118],"metallization":[39],"effect":[40],"(ECM),":[41],"this":[42],"-":[45,48],"amongst":[46],"others":[47],"caused":[49],"by":[50,84,107,152],"random":[51],"discrete":[52],"reactions":[54,83],"during":[55,100],"filament":[57,102],"growth.":[58],"Based":[59],"a":[61,67,85,108,113,189],"physical":[62],"model":[63,73],"for":[64,123],"ECM":[65],"cells":[66],"1D":[68],"Monte":[69,153],"Carlo":[70,154],"circuit":[71,89],"simulation":[72,90],"was":[74,92,157],"derived":[75],"models":[77],"occurrence":[79],"individual":[81],"Poisson":[86],"process.":[87],"By":[88],"it":[91],"possible":[93,159],"show":[95,161],"that":[96,162],"conductance":[98,165],"variation":[99,166],"growth":[103],"can":[104],"be":[105,169],"controlled":[106],"regulating":[109,138,182],"device,":[110],"establishes":[112],"negative":[114],"feedback":[115],"reaction":[119],"rate.":[120],"In":[121],"particular,":[122],"three":[124],"different":[125],"load":[126],"types":[127],"(current":[128],"source,":[129],"linear":[130],"resistor,":[131],"source":[133],"coupled":[134],"NMOS":[135],"transistor)":[136],"properties":[139],"regard":[141],"reduction":[144],"(and":[145],"partly":[146],"observed":[147],"experiments)":[149],"were":[150],"shown":[151],"simulation.":[155],"It":[156],"especially":[158],"obtained":[164],"appears":[167],"consequence":[171],"respective":[174],"dynamic":[175],"joint":[176],"interaction":[177],"between":[178],"-in":[186],"turn-":[187],"not":[188],"predetermined":[190],"property":[191],"alone.":[195]},"counts_by_year":[{"year":2014,"cited_by_count":1}],"updated_date":"2026-04-04T16:13:02.066488","created_date":"2025-10-10T00:00:00"}