{"id":"https://openalex.org/W4411552953","doi":"https://doi.org/10.1145/3736548.3737828","title":"Revisiting Memory Hierarchies with CMM-H: Use Device-side Caching to Integrate DRAM and SSD for a Hybrid CXL Memory","display_name":"Revisiting Memory Hierarchies with CMM-H: Use Device-side Caching to Integrate DRAM and SSD for a Hybrid CXL Memory","publication_year":2025,"publication_date":"2025-06-23","ids":{"openalex":"https://openalex.org/W4411552953","doi":"https://doi.org/10.1145/3736548.3737828"},"language":"en","primary_location":{"id":"doi:10.1145/3736548.3737828","is_oa":true,"landing_page_url":"https://doi.org/10.1145/3736548.3737828","pdf_url":null,"source":null,"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the 17th ACM Workshop on Hot Topics in Storage and File Systems","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://doi.org/10.1145/3736548.3737828","any_repository_has_fulltext":null},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5041663829","display_name":"Mohammadreza Soltaniyeh","orcid":"https://orcid.org/0000-0002-2608-7322"},"institutions":[{"id":"https://openalex.org/I100625452","display_name":"ON Semiconductor (United States)","ror":"https://ror.org/03nw6pt28","country_code":"US","type":"company","lineage":["https://openalex.org/I100625452"]},{"id":"https://openalex.org/I4210101778","display_name":"Samsung (United States)","ror":"https://ror.org/01bfbvm65","country_code":"US","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4210101778"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Mohammadreza Soltaniyeh","raw_affiliation_strings":["Memory Solutoins Lab, Samsung Semiconductor, Inc., San Jose, CA, USA"],"raw_orcid":"https://orcid.org/0000-0002-2608-7322","affiliations":[{"raw_affiliation_string":"Memory Solutoins Lab, Samsung Semiconductor, Inc., San Jose, CA, USA","institution_ids":["https://openalex.org/I100625452","https://openalex.org/I4210101778"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111321047","display_name":"Gongjin Sun","orcid":"https://orcid.org/0009-0002-5420-1361"},"institutions":[{"id":"https://openalex.org/I100625452","display_name":"ON Semiconductor (United States)","ror":"https://ror.org/03nw6pt28","country_code":"US","type":"company","lineage":["https://openalex.org/I100625452"]},{"id":"https://openalex.org/I4210101778","display_name":"Samsung (United States)","ror":"https://ror.org/01bfbvm65","country_code":"US","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4210101778"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Gongjin Sun","raw_affiliation_strings":["Memory Solutoins Lab, Samsung Semiconductor, Inc., San Jose, CA, USA"],"raw_orcid":"https://orcid.org/0009-0002-5420-1361","affiliations":[{"raw_affiliation_string":"Memory Solutoins Lab, Samsung Semiconductor, Inc., San Jose, CA, USA","institution_ids":["https://openalex.org/I100625452","https://openalex.org/I4210101778"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5089599626","display_name":"Xuebin Yao","orcid":null},"institutions":[{"id":"https://openalex.org/I100625452","display_name":"ON Semiconductor (United States)","ror":"https://ror.org/03nw6pt28","country_code":"US","type":"company","lineage":["https://openalex.org/I100625452"]},{"id":"https://openalex.org/I4210101778","display_name":"Samsung (United States)","ror":"https://ror.org/01bfbvm65","country_code":"US","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4210101778"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Xuebin Yao","raw_affiliation_strings":["Memory Solutoins Lab, Samsung Semiconductor, Inc., San Jose, CA, USA"],"raw_orcid":"https://orcid.org/0009-0008-2731-4807","affiliations":[{"raw_affiliation_string":"Memory Solutoins Lab, Samsung Semiconductor, Inc., San Jose, CA, USA","institution_ids":["https://openalex.org/I100625452","https://openalex.org/I4210101778"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5046127616","display_name":"Amir Beygi","orcid":null},"institutions":[{"id":"https://openalex.org/I100625452","display_name":"ON Semiconductor (United States)","ror":"https://ror.org/03nw6pt28","country_code":"US","type":"company","lineage":["https://openalex.org/I100625452"]},{"id":"https://openalex.org/I4210101778","display_name":"Samsung (United States)","ror":"https://ror.org/01bfbvm65","country_code":"US","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4210101778"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Amir Beygi","raw_affiliation_strings":["Memory Solutoins Lab, Samsung Semiconductor, Inc., San Jose, CA, USA"],"raw_orcid":"https://orcid.org/0009-0005-9621-4656","affiliations":[{"raw_affiliation_string":"Memory Solutoins Lab, Samsung Semiconductor, Inc., San Jose, CA, USA","institution_ids":["https://openalex.org/I100625452","https://openalex.org/I4210101778"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5118596423","display_name":"Ramdas Kachare","orcid":null},"institutions":[{"id":"https://openalex.org/I100625452","display_name":"ON Semiconductor (United States)","ror":"https://ror.org/03nw6pt28","country_code":"US","type":"company","lineage":["https://openalex.org/I100625452"]},{"id":"https://openalex.org/I4210101778","display_name":"Samsung (United States)","ror":"https://ror.org/01bfbvm65","country_code":"US","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4210101778"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Ramdas Kachare","raw_affiliation_strings":["Memory Solutoins Lab, Samsung Semiconductor, Inc., San Jose, CA, USA"],"raw_orcid":"https://orcid.org/0009-0007-0909-8488","affiliations":[{"raw_affiliation_string":"Memory Solutoins Lab, Samsung Semiconductor, Inc., San Jose, CA, USA","institution_ids":["https://openalex.org/I100625452","https://openalex.org/I4210101778"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Dongwan Zhao","orcid":"https://orcid.org/0009-0001-0336-0234"},"institutions":[{"id":"https://openalex.org/I100625452","display_name":"ON Semiconductor (United States)","ror":"https://ror.org/03nw6pt28","country_code":"US","type":"company","lineage":["https://openalex.org/I100625452"]},{"id":"https://openalex.org/I4210101778","display_name":"Samsung (United States)","ror":"https://ror.org/01bfbvm65","country_code":"US","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4210101778"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Dongwan Zhao","raw_affiliation_strings":["Memory Solutoins Lab, Samsung Semiconductor, Inc., San Jose, CA, USA"],"raw_orcid":"https://orcid.org/0009-0001-0336-0234","affiliations":[{"raw_affiliation_string":"Memory Solutoins Lab, Samsung Semiconductor, Inc., San Jose, CA, USA","institution_ids":["https://openalex.org/I100625452","https://openalex.org/I4210101778"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5029871760","display_name":"Hingkwan Huen","orcid":null},"institutions":[{"id":"https://openalex.org/I100625452","display_name":"ON Semiconductor (United States)","ror":"https://ror.org/03nw6pt28","country_code":"US","type":"company","lineage":["https://openalex.org/I100625452"]},{"id":"https://openalex.org/I4210101778","display_name":"Samsung (United States)","ror":"https://ror.org/01bfbvm65","country_code":"US","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4210101778"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Hingkwan Huen","raw_affiliation_strings":["Memory Solutoins Lab, Samsung Semiconductor, Inc., San Jose, CA, USA"],"raw_orcid":"https://orcid.org/0009-0000-8193-1867","affiliations":[{"raw_affiliation_string":"Memory Solutoins Lab, Samsung Semiconductor, Inc., San Jose, CA, USA","institution_ids":["https://openalex.org/I100625452","https://openalex.org/I4210101778"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Andrew Chang","orcid":"https://orcid.org/0009-0004-5786-1730"},"institutions":[{"id":"https://openalex.org/I100625452","display_name":"ON Semiconductor (United States)","ror":"https://ror.org/03nw6pt28","country_code":"US","type":"company","lineage":["https://openalex.org/I100625452"]},{"id":"https://openalex.org/I4210101778","display_name":"Samsung (United States)","ror":"https://ror.org/01bfbvm65","country_code":"US","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4210101778"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Andrew Chang","raw_affiliation_strings":["Memory Solutoins Lab, Samsung Semiconductor, Inc., San Jose, CA, USA"],"raw_orcid":"https://orcid.org/0009-0004-5786-1730","affiliations":[{"raw_affiliation_string":"Memory Solutoins Lab, Samsung Semiconductor, Inc., San Jose, CA, USA","institution_ids":["https://openalex.org/I100625452","https://openalex.org/I4210101778"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5118596424","display_name":"Senthil Murugesapandian","orcid":null},"institutions":[{"id":"https://openalex.org/I100625452","display_name":"ON Semiconductor (United States)","ror":"https://ror.org/03nw6pt28","country_code":"US","type":"company","lineage":["https://openalex.org/I100625452"]},{"id":"https://openalex.org/I4210101778","display_name":"Samsung (United States)","ror":"https://ror.org/01bfbvm65","country_code":"US","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4210101778"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Senthil Murugesapandian","raw_affiliation_strings":["Memory Solutoins Lab, Samsung Semiconductor, Inc., San Jose, CA, USA"],"raw_orcid":"https://orcid.org/0009-0009-0403-8704","affiliations":[{"raw_affiliation_string":"Memory Solutoins Lab, Samsung Semiconductor, Inc., San Jose, CA, USA","institution_ids":["https://openalex.org/I100625452","https://openalex.org/I4210101778"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5004481931","display_name":"Caroline Kahn","orcid":null},"institutions":[{"id":"https://openalex.org/I100625452","display_name":"ON Semiconductor (United States)","ror":"https://ror.org/03nw6pt28","country_code":"US","type":"company","lineage":["https://openalex.org/I100625452"]},{"id":"https://openalex.org/I4210101778","display_name":"Samsung (United States)","ror":"https://ror.org/01bfbvm65","country_code":"US","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4210101778"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Caroline Kahn","raw_affiliation_strings":["Memory Solutoins Lab, Samsung Semiconductor, Inc., San Jose, CA, USA"],"raw_orcid":"https://orcid.org/0009-0003-0601-0410","affiliations":[{"raw_affiliation_string":"Memory Solutoins Lab, Samsung Semiconductor, Inc., San Jose, CA, USA","institution_ids":["https://openalex.org/I100625452","https://openalex.org/I4210101778"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":10,"corresponding_author_ids":["https://openalex.org/A5041663829"],"corresponding_institution_ids":["https://openalex.org/I100625452","https://openalex.org/I4210101778"],"apc_list":null,"apc_paid":null,"fwci":6.7583,"has_fulltext":false,"cited_by_count":5,"citation_normalized_percentile":{"value":0.96734813,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":91,"max":100},"biblio":{"volume":null,"issue":null,"first_page":"45","last_page":"51"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11181","display_name":"Advanced Data Storage Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/1705","display_name":"Computer Networks and Communications"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11181","display_name":"Advanced Data Storage Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/1705","display_name":"Computer Networks and Communications"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10054","display_name":"Parallel Computing and Optimization Techniques","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/1708","display_name":"Hardware and Architecture"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11269","display_name":"Algorithms and Data Compression","score":0.9957000017166138,"subfield":{"id":"https://openalex.org/subfields/1702","display_name":"Artificial Intelligence"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/dram","display_name":"Dram","score":0.8946685791015625},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.7511210441589355},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.5121560096740723},{"id":"https://openalex.org/keywords/random-access-memory","display_name":"Random access memory","score":0.502422571182251},{"id":"https://openalex.org/keywords/non-volatile-random-access-memory","display_name":"Non-volatile random-access memory","score":0.46813854575157166},{"id":"https://openalex.org/keywords/semiconductor-memory","display_name":"Semiconductor memory","score":0.44302451610565186},{"id":"https://openalex.org/keywords/parallel-computing","display_name":"Parallel computing","score":0.3770849108695984},{"id":"https://openalex.org/keywords/operating-system","display_name":"Operating system","score":0.3608589470386505},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.3414527475833893},{"id":"https://openalex.org/keywords/computer-architecture","display_name":"Computer architecture","score":0.3377259373664856},{"id":"https://openalex.org/keywords/memory-refresh","display_name":"Memory refresh","score":0.2666294574737549},{"id":"https://openalex.org/keywords/computer-memory","display_name":"Computer memory","score":0.20636311173439026}],"concepts":[{"id":"https://openalex.org/C7366592","wikidata":"https://www.wikidata.org/wiki/Q1255620","display_name":"Dram","level":2,"score":0.8946685791015625},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.7511210441589355},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.5121560096740723},{"id":"https://openalex.org/C2994168587","wikidata":"https://www.wikidata.org/wiki/Q5295","display_name":"Random access memory","level":2,"score":0.502422571182251},{"id":"https://openalex.org/C34172316","wikidata":"https://www.wikidata.org/wiki/Q499024","display_name":"Non-volatile random-access memory","level":5,"score":0.46813854575157166},{"id":"https://openalex.org/C98986596","wikidata":"https://www.wikidata.org/wiki/Q1143031","display_name":"Semiconductor memory","level":2,"score":0.44302451610565186},{"id":"https://openalex.org/C173608175","wikidata":"https://www.wikidata.org/wiki/Q232661","display_name":"Parallel computing","level":1,"score":0.3770849108695984},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.3608589470386505},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.3414527475833893},{"id":"https://openalex.org/C118524514","wikidata":"https://www.wikidata.org/wiki/Q173212","display_name":"Computer architecture","level":1,"score":0.3377259373664856},{"id":"https://openalex.org/C87907426","wikidata":"https://www.wikidata.org/wiki/Q6815755","display_name":"Memory refresh","level":4,"score":0.2666294574737549},{"id":"https://openalex.org/C92855701","wikidata":"https://www.wikidata.org/wiki/Q5830907","display_name":"Computer memory","level":3,"score":0.20636311173439026}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1145/3736548.3737828","is_oa":true,"landing_page_url":"https://doi.org/10.1145/3736548.3737828","pdf_url":null,"source":null,"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the 17th ACM Workshop on Hot Topics in Storage and File Systems","raw_type":"proceedings-article"}],"best_oa_location":{"id":"doi:10.1145/3736548.3737828","is_oa":true,"landing_page_url":"https://doi.org/10.1145/3736548.3737828","pdf_url":null,"source":null,"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the 17th ACM Workshop on Hot Topics in Storage and File Systems","raw_type":"proceedings-article"},"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.5400000214576721,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":15,"referenced_works":["https://openalex.org/W1983545421","https://openalex.org/W4282555269","https://openalex.org/W4312304862","https://openalex.org/W4312783897","https://openalex.org/W4315630617","https://openalex.org/W4316660797","https://openalex.org/W4318541517","https://openalex.org/W4318767786","https://openalex.org/W4319866214","https://openalex.org/W4327930439","https://openalex.org/W4361194512","https://openalex.org/W4388581093","https://openalex.org/W4391250471","https://openalex.org/W4394946262","https://openalex.org/W4399677840"],"related_works":["https://openalex.org/W2169710001","https://openalex.org/W3209704453","https://openalex.org/W2390049373","https://openalex.org/W2917388298","https://openalex.org/W2469797321","https://openalex.org/W1992635254","https://openalex.org/W2065778483","https://openalex.org/W3096220267","https://openalex.org/W2163893587","https://openalex.org/W2532920256"],"abstract_inverted_index":{"Emerging":[0],"data-intensive":[1],"applications":[2],"increasingly":[3],"demand":[4],"large-scale,":[5],"cost-effective,":[6],"and":[7,20,54,69,80],"high-performance":[8],"memory":[9,28,78,87],"solutions.":[10],"Samsung's":[11],"CXL":[12,77,86],"Memory":[13],"Module-Hybrid":[14],"(CMM-H)":[15],"uniquely":[16],"integrates":[17],"DDR":[18],"DRAM":[19],"NAND":[21],"flash":[22],"storage":[23],"within":[24],"a":[25,41],"single":[26],"CXL-attached":[27],"device":[29],"for":[30,84],"higher":[31],"capacity":[32],"while":[33],"keeping":[34],"still":[35],"high":[36],"performance.":[37],"This":[38],"paper":[39],"provides":[40,81],"comprehensive":[42],"exploration":[43],"of":[44,61],"the":[45,59],"CMM-H":[46,62],"module,":[47],"detailing":[48],"its":[49,67],"architectural":[50],"design,":[51],"operational":[52],"workflow,":[53],"caching":[55],"mechanisms.":[56],"We":[57],"evaluate":[58],"performance":[60],"through":[63],"extensive":[64],"experiments,":[65],"highlighting":[66],"benefits":[68],"limitations.":[70],"Our":[71],"study":[72],"contributes":[73],"insights":[74],"into":[75],"hybrid":[76],"architectures":[79],"valuable":[82],"guidance":[83],"future":[85],"design":[88],"improvements.":[89]},"counts_by_year":[{"year":2026,"cited_by_count":4},{"year":2025,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}