{"id":"https://openalex.org/W4394898243","doi":"https://doi.org/10.1145/3650400.3650668","title":"Improvement of reverse recovery characteristics through integration of MOS-barrier Schottky diode in SiC superjunction structure","display_name":"Improvement of reverse recovery characteristics through integration of MOS-barrier Schottky diode in SiC superjunction structure","publication_year":2023,"publication_date":"2023-10-20","ids":{"openalex":"https://openalex.org/W4394898243","doi":"https://doi.org/10.1145/3650400.3650668"},"language":"en","primary_location":{"id":"doi:10.1145/3650400.3650668","is_oa":false,"landing_page_url":"https://doi.org/10.1145/3650400.3650668","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the 2023 7th International Conference on Electronic Information Technology and Computer Engineering","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5089365058","display_name":"K. W. Zhang","orcid":"https://orcid.org/0009-0001-7943-0809"},"institutions":[{"id":"https://openalex.org/I37796252","display_name":"Beijing University of Technology","ror":"https://ror.org/037b1pp87","country_code":"CN","type":"education","lineage":["https://openalex.org/I37796252"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Kang Zhang","raw_affiliation_strings":["Faculty of Information Technology Beijing University of Technology, China"],"raw_orcid":"https://orcid.org/0009-0001-7943-0809","affiliations":[{"raw_affiliation_string":"Faculty of Information Technology Beijing University of Technology, China","institution_ids":["https://openalex.org/I37796252"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5079345272","display_name":"Yu Wu","orcid":"https://orcid.org/0000-0002-5847-946X"},"institutions":[{"id":"https://openalex.org/I37796252","display_name":"Beijing University of Technology","ror":"https://ror.org/037b1pp87","country_code":"CN","type":"education","lineage":["https://openalex.org/I37796252"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yu Wu","raw_affiliation_strings":["Faculty of Information Technology Beijing University of Technology, China"],"raw_orcid":"https://orcid.org/0000-0002-5847-946X","affiliations":[{"raw_affiliation_string":"Faculty of Information Technology Beijing University of Technology, China","institution_ids":["https://openalex.org/I37796252"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5028423721","display_name":"Dongqing Hu","orcid":"https://orcid.org/0000-0002-2793-3594"},"institutions":[{"id":"https://openalex.org/I37796252","display_name":"Beijing University of Technology","ror":"https://ror.org/037b1pp87","country_code":"CN","type":"education","lineage":["https://openalex.org/I37796252"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Dongqing Hu","raw_affiliation_strings":["Faculty of Information Technology Beijing University of Technology, China"],"raw_orcid":"https://orcid.org/0000-0002-2793-3594","affiliations":[{"raw_affiliation_string":"Faculty of Information Technology Beijing University of Technology, China","institution_ids":["https://openalex.org/I37796252"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5050388987","display_name":"Yunpeng Jia","orcid":"https://orcid.org/0009-0004-8340-3215"},"institutions":[{"id":"https://openalex.org/I37796252","display_name":"Beijing University of Technology","ror":"https://ror.org/037b1pp87","country_code":"CN","type":"education","lineage":["https://openalex.org/I37796252"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yunpeng Jia","raw_affiliation_strings":["Faculty of Information Technology Beijing University of Technology, China"],"raw_orcid":"https://orcid.org/0009-0004-8340-3215","affiliations":[{"raw_affiliation_string":"Faculty of Information Technology Beijing University of Technology, China","institution_ids":["https://openalex.org/I37796252"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5089278783","display_name":"Xintian Zhou","orcid":null},"institutions":[{"id":"https://openalex.org/I37796252","display_name":"Beijing University of Technology","ror":"https://ror.org/037b1pp87","country_code":"CN","type":"education","lineage":["https://openalex.org/I37796252"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xintian Zhou","raw_affiliation_strings":["Faculty of Information Technology Beijing University of Technology, China"],"raw_orcid":"https://orcid.org/0000-0001-9926-947X","affiliations":[{"raw_affiliation_string":"Faculty of Information Technology Beijing University of Technology, China","institution_ids":["https://openalex.org/I37796252"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I37796252"],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1601","last_page":"1608"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":0.9961000084877014,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.9958000183105469,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.8064712285995483},{"id":"https://openalex.org/keywords/schottky-diode","display_name":"Schottky diode","score":0.7926759123802185},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.7615863084793091},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.6900222301483154},{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.6775196194648743},{"id":"https://openalex.org/keywords/schottky-barrier","display_name":"Schottky barrier","score":0.6686474084854126},{"id":"https://openalex.org/keywords/reverse-leakage-current","display_name":"Reverse leakage current","score":0.5358816981315613},{"id":"https://openalex.org/keywords/step-recovery-diode","display_name":"Step recovery diode","score":0.45433834195137024},{"id":"https://openalex.org/keywords/metal\u2013semiconductor-junction","display_name":"Metal\u2013semiconductor junction","score":0.4382711946964264},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.36680370569229126},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.3453432619571686},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.2676423192024231}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8064712285995483},{"id":"https://openalex.org/C205200001","wikidata":"https://www.wikidata.org/wiki/Q176066","display_name":"Schottky diode","level":3,"score":0.7926759123802185},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.7615863084793091},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.6900222301483154},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.6775196194648743},{"id":"https://openalex.org/C16115445","wikidata":"https://www.wikidata.org/wiki/Q2391942","display_name":"Schottky barrier","level":3,"score":0.6686474084854126},{"id":"https://openalex.org/C20615193","wikidata":"https://www.wikidata.org/wiki/Q2309288","display_name":"Reverse leakage current","level":4,"score":0.5358816981315613},{"id":"https://openalex.org/C188855776","wikidata":"https://www.wikidata.org/wiki/Q120271","display_name":"Step recovery diode","level":4,"score":0.45433834195137024},{"id":"https://openalex.org/C5667319","wikidata":"https://www.wikidata.org/wiki/Q1924839","display_name":"Metal\u2013semiconductor junction","level":4,"score":0.4382711946964264},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.36680370569229126},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.3453432619571686},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.2676423192024231},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1145/3650400.3650668","is_oa":false,"landing_page_url":"https://doi.org/10.1145/3650400.3650668","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the 2023 7th International Conference on Electronic Information Technology and Computer Engineering","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.8999999761581421,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W1964535485","https://openalex.org/W2136250228","https://openalex.org/W2897655480","https://openalex.org/W2945777048","https://openalex.org/W2958892473","https://openalex.org/W3000267022","https://openalex.org/W3005749740","https://openalex.org/W3132380020","https://openalex.org/W3139210310"],"related_works":["https://openalex.org/W2147656057","https://openalex.org/W1540585561","https://openalex.org/W2917180890","https://openalex.org/W2349347676","https://openalex.org/W2911343812","https://openalex.org/W2170019241","https://openalex.org/W1981646027","https://openalex.org/W2015042827","https://openalex.org/W4200007379","https://openalex.org/W1982617917"],"abstract_inverted_index":{"In":[0],"this":[1],"paper,":[2],"a":[3,34,41,66,70,80,109,115,143],"novel":[4],"SiC":[5],"superjunction":[6,110],"metal-oxide-semiconductor":[7],"field-effect":[8],"transistor":[9],"(MOSFET)":[10],"with":[11,170],"integrated":[12],"MOS":[13,81],"junction":[14],"barrier":[15],"Schottky":[16,35,116,135],"diode":[17,72,127,136,152,182],"(MJBS)":[18],"is":[19,25,46,73,102,140,229],"proposed,":[20],"in":[21,57,74],"which":[22,118],"the":[23,29,38,49,58,61,75,91,94,98,121,125,134,145,150,158,171,175,180,185,193,198,210,223],"n-pillar":[24,92],"directly":[26],"connected":[27,47],"to":[28,32,48,64,78,108],"source":[30,50,95],"electrode":[31,51],"form":[33,65,79],"contact":[36],"at":[37],"top,":[39],"and":[40,69,97,163,189,192,203,219,222],"part":[42],"of":[43,60,124,133,149,209],"polycrystalline":[44],"silicon":[45],"by":[52,104,179,216,231],"inserting":[53],"an":[54],"oxide":[55],"layer":[56],"centre":[59],"trench":[62],"gate":[63,68],"split":[67],"body":[71,151,173],"on":[76],"state":[77],"channel":[82,181],"electron":[83],"accumulation":[84],"layer,":[85],"electrons":[86],"can":[87,153],"easily":[88],"flow":[89],"from":[90],"into":[93],"contact,":[96,117],"turn-on":[99],"voltage":[100],"Vth":[101],"reduced":[103,215,230],"61.":[105],"3%":[106],"compared":[107],"MOSFET":[111],"that":[112,197],"only":[113],"forms":[114],"further":[119,164],"reduces":[120],"static":[122],"loss":[123,227],"built-in":[126],"when":[128],"it":[129],"conducts.":[130],"The":[131],"conduction":[132,177],"during":[137],"reverse":[138,159,166,186,199,205],"recovery":[139,160,167,187,200,206],"enhanced.":[141],"As":[142],"result,":[144],"hole":[146],"injection":[147],"efficiency":[148],"be":[154],"reduced,":[155],"thereby":[156],"lowering":[157],"charge":[161,201],"(Qrr)":[162,202],"suppressing":[165],"oscillations.":[168],"Compared":[169],"parasitic":[172],"diode,":[174],"unipolar":[176],"generated":[178],"effectively":[183],"optimises":[184],"performance":[188],"switching":[190,225],"characteristics,":[191],"simulation":[194],"results":[195],"show":[196],"peak":[204],"current":[207],"(Irrm)":[208],"proposed":[211],"SJ":[212],"MOSFETs":[213],"are":[214],"about":[217],"74.9%":[218],"69.7%,":[220],"respectively,":[221],"total":[224],"energy":[226],"ESW":[228],"73.6%.":[232]},"counts_by_year":[{"year":2025,"cited_by_count":1}],"updated_date":"2026-07-14T23:27:15.235271","created_date":"2025-10-10T00:00:00"}