{"id":"https://openalex.org/W4205291526","doi":"https://doi.org/10.1145/3501409.3501422","title":"Investigation of 1200 V 4H-SiC Junction Barrier Schottky Diode with Built-in MOSFET","display_name":"Investigation of 1200 V 4H-SiC Junction Barrier Schottky Diode with Built-in MOSFET","publication_year":2021,"publication_date":"2021-10-22","ids":{"openalex":"https://openalex.org/W4205291526","doi":"https://doi.org/10.1145/3501409.3501422"},"language":"en","primary_location":{"id":"doi:10.1145/3501409.3501422","is_oa":false,"landing_page_url":"https://doi.org/10.1145/3501409.3501422","pdf_url":null,"source":{"id":"https://openalex.org/S4363608789","display_name":"Proceedings of the 2021 5th International Conference on Electronic Information Technology and Computer Engineering","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the 2021 5th International Conference on Electronic Information Technology and Computer Engineering","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5067083098","display_name":"Yingying Lei","orcid":null},"institutions":[{"id":"https://openalex.org/I37796252","display_name":"Beijing University of Technology","ror":"https://ror.org/037b1pp87","country_code":"CN","type":"education","lineage":["https://openalex.org/I37796252"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yingying Lei","raw_affiliation_strings":["Beijing University of Technology, Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Beijing University of Technology, Beijing, China","institution_ids":["https://openalex.org/I37796252"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5013596621","display_name":"Yu Wu","orcid":"https://orcid.org/0000-0002-2648-562X"},"institutions":[{"id":"https://openalex.org/I37796252","display_name":"Beijing University of Technology","ror":"https://ror.org/037b1pp87","country_code":"CN","type":"education","lineage":["https://openalex.org/I37796252"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yu Wu","raw_affiliation_strings":["Beijing University of Technology, Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Beijing University of Technology, Beijing, China","institution_ids":["https://openalex.org/I37796252"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5089278783","display_name":"Xintian Zhou","orcid":null},"institutions":[{"id":"https://openalex.org/I37796252","display_name":"Beijing University of Technology","ror":"https://ror.org/037b1pp87","country_code":"CN","type":"education","lineage":["https://openalex.org/I37796252"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xintian Zhou","raw_affiliation_strings":["Beijing University of Technology, Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Beijing University of Technology, Beijing, China","institution_ids":["https://openalex.org/I37796252"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100457381","display_name":"Meng Liu","orcid":"https://orcid.org/0000-0001-6450-0969"},"institutions":[{"id":"https://openalex.org/I37796252","display_name":"Beijing University of Technology","ror":"https://ror.org/037b1pp87","country_code":"CN","type":"education","lineage":["https://openalex.org/I37796252"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Meng Liu","raw_affiliation_strings":["Beijing University of Technology, Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Beijing University of Technology, Beijing, China","institution_ids":["https://openalex.org/I37796252"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100406119","display_name":"Xinyu Li","orcid":"https://orcid.org/0000-0003-1332-9203"},"institutions":[{"id":"https://openalex.org/I37796252","display_name":"Beijing University of Technology","ror":"https://ror.org/037b1pp87","country_code":"CN","type":"education","lineage":["https://openalex.org/I37796252"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xinyu Li","raw_affiliation_strings":["Beijing University of Technology, Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Beijing University of Technology, Beijing, China","institution_ids":["https://openalex.org/I37796252"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5016577846","display_name":"Xingyu Fang","orcid":null},"institutions":[{"id":"https://openalex.org/I37796252","display_name":"Beijing University of Technology","ror":"https://ror.org/037b1pp87","country_code":"CN","type":"education","lineage":["https://openalex.org/I37796252"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xingyu Fang","raw_affiliation_strings":["Beijing University of Technology, Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Beijing University of Technology, Beijing, China","institution_ids":["https://openalex.org/I37796252"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5105412549","display_name":"Kai Zhao","orcid":"https://orcid.org/0000-0002-0977-5094"},"institutions":[{"id":"https://openalex.org/I37796252","display_name":"Beijing University of Technology","ror":"https://ror.org/037b1pp87","country_code":"CN","type":"education","lineage":["https://openalex.org/I37796252"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Kai Zhao","raw_affiliation_strings":["Beijing University of Technology, Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Beijing University of Technology, Beijing, China","institution_ids":["https://openalex.org/I37796252"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5051044069","display_name":"Zhong Zheng","orcid":"https://orcid.org/0000-0002-1741-0554"},"institutions":[{"id":"https://openalex.org/I37796252","display_name":"Beijing University of Technology","ror":"https://ror.org/037b1pp87","country_code":"CN","type":"education","lineage":["https://openalex.org/I37796252"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zheng Zhong","raw_affiliation_strings":["Beijing University of Technology, Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Beijing University of Technology, Beijing, China","institution_ids":["https://openalex.org/I37796252"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":8,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.21433766,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"65","last_page":"70"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10624","display_name":"Silicon and Solar Cell Technologies","score":0.998199999332428,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7990882396697998},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.7510086894035339},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.7112542390823364},{"id":"https://openalex.org/keywords/breakdown-voltage","display_name":"Breakdown voltage","score":0.6899039149284363},{"id":"https://openalex.org/keywords/schottky-barrier","display_name":"Schottky barrier","score":0.676749050617218},{"id":"https://openalex.org/keywords/doping","display_name":"Doping","score":0.6526981592178345},{"id":"https://openalex.org/keywords/schottky-diode","display_name":"Schottky diode","score":0.6429758071899414},{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.5335282683372498},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.5117483139038086},{"id":"https://openalex.org/keywords/metal\u2013semiconductor-junction","display_name":"Metal\u2013semiconductor junction","score":0.4366548955440521},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3986222445964813},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.3339298963546753},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.10140565037727356},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.09964755177497864},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.05571851134300232}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7990882396697998},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.7510086894035339},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.7112542390823364},{"id":"https://openalex.org/C119321828","wikidata":"https://www.wikidata.org/wiki/Q1267190","display_name":"Breakdown voltage","level":3,"score":0.6899039149284363},{"id":"https://openalex.org/C16115445","wikidata":"https://www.wikidata.org/wiki/Q2391942","display_name":"Schottky barrier","level":3,"score":0.676749050617218},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.6526981592178345},{"id":"https://openalex.org/C205200001","wikidata":"https://www.wikidata.org/wiki/Q176066","display_name":"Schottky diode","level":3,"score":0.6429758071899414},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.5335282683372498},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.5117483139038086},{"id":"https://openalex.org/C5667319","wikidata":"https://www.wikidata.org/wiki/Q1924839","display_name":"Metal\u2013semiconductor junction","level":4,"score":0.4366548955440521},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3986222445964813},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3339298963546753},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.10140565037727356},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.09964755177497864},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.05571851134300232},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1145/3501409.3501422","is_oa":false,"landing_page_url":"https://doi.org/10.1145/3501409.3501422","pdf_url":null,"source":{"id":"https://openalex.org/S4363608789","display_name":"Proceedings of the 2021 5th International Conference on Electronic Information Technology and Computer Engineering","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the 2021 5th International Conference on Electronic Information Technology and Computer Engineering","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/6","score":0.4099999964237213,"display_name":"Clean water and sanitation"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":12,"referenced_works":["https://openalex.org/W1596672649","https://openalex.org/W1863762518","https://openalex.org/W1922820527","https://openalex.org/W1988386704","https://openalex.org/W2035068443","https://openalex.org/W2108356978","https://openalex.org/W2137374832","https://openalex.org/W2159665859","https://openalex.org/W2737262326","https://openalex.org/W2765694951","https://openalex.org/W2990177142","https://openalex.org/W3008079471"],"related_works":["https://openalex.org/W2147656057","https://openalex.org/W1981646027","https://openalex.org/W1540585561","https://openalex.org/W2917180890","https://openalex.org/W4200007379","https://openalex.org/W2911343812","https://openalex.org/W2349347676","https://openalex.org/W2170019241","https://openalex.org/W2003109201","https://openalex.org/W2614156624"],"abstract_inverted_index":{"A":[0],"novel":[1],"1200":[2],"V":[3],"4H-SiC":[4],"junction":[5],"barrier":[6],"Schottky":[7],"diode":[8],"(JBS)":[9],"with":[10,18,35],"built-in":[11],"MOSFET(MJBS)":[12],"structure":[13],"is":[14,71],"proposed":[15,33],"and":[16,26,32,49,88],"simulated":[17],"Sentaurus":[19],"TCAD.":[20],"The":[21,41],"characteristics":[22,53],"of":[23,29,56,83,92,100],"forward":[24,46],"conduction":[25],"reverse":[27,51],"blocking":[28],"conventional":[30],"JBS":[31],"MJBS":[34,42],"different":[36],"channel":[37,75,101],"widths":[38],"are":[39],"investigated.":[40],"exhibits":[43],"a":[44,66],"lower":[45],"voltage":[47],"drop":[48],"better":[50],"breakdown":[52,95],"than":[54],"that":[55],"the":[57,80,84,90,98],"JBS,":[58],"which":[59,77],"attributes":[60],"to":[61,97],"high-reliability":[62],"applications.":[63],"In":[64],"addition,":[65],"local":[67],"heavy":[68],"doping":[69,102],"concentration":[70],"adopted":[72],"in":[73],"MOSFET":[74],"region,":[76],"can":[78],"reduce":[79,89],"on-state":[81],"resistance":[82],"gate":[85],"accumulation":[86],"layer":[87],"possibility":[91],"early":[93],"device":[94],"due":[96],"increase":[99],"concentration.":[103]},"counts_by_year":[],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}