{"id":"https://openalex.org/W3168928034","doi":"https://doi.org/10.1145/3456415.3456467","title":"Design of a Novel S-band Broadband CW Self-biased GaN Power Amplifier for Communication","display_name":"Design of a Novel S-band Broadband CW Self-biased GaN Power Amplifier for Communication","publication_year":2021,"publication_date":"2021-02-25","ids":{"openalex":"https://openalex.org/W3168928034","doi":"https://doi.org/10.1145/3456415.3456467","mag":"3168928034"},"language":"en","primary_location":{"id":"doi:10.1145/3456415.3456467","is_oa":false,"landing_page_url":"https://doi.org/10.1145/3456415.3456467","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 9th International Conference on Communications and Broadband Networking","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5071698935","display_name":"Luchuan Zhang","orcid":null},"institutions":[{"id":"https://openalex.org/I76569877","display_name":"Southeast University","ror":"https://ror.org/04ct4d772","country_code":"CN","type":"education","lineage":["https://openalex.org/I76569877"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Luchuan Zhang","raw_affiliation_strings":["Southeast University, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Southeast University, China","institution_ids":["https://openalex.org/I76569877"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5035553431","display_name":"Shichang Zhong","orcid":"https://orcid.org/0000-0003-1678-0139"},"institutions":[{"id":"https://openalex.org/I2799736854","display_name":"Nanjing Institute of Technology","ror":"https://ror.org/00n6txq60","country_code":"CN","type":"education","lineage":["https://openalex.org/I2799736854"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Shichang Zhong","raw_affiliation_strings":["Nanjing Electronic Devices Institute, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Nanjing Electronic Devices Institute, China","institution_ids":["https://openalex.org/I2799736854"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101753000","display_name":"Yue Chen","orcid":"https://orcid.org/0000-0001-8337-9367"},"institutions":[{"id":"https://openalex.org/I2799736854","display_name":"Nanjing Institute of Technology","ror":"https://ror.org/00n6txq60","country_code":"CN","type":"education","lineage":["https://openalex.org/I2799736854"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yue Chen","raw_affiliation_strings":["Nanjing Electronic Devices Institute, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Nanjing Electronic Devices Institute, China","institution_ids":["https://openalex.org/I2799736854"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5035979347","display_name":"Shijun Tang","orcid":null},"institutions":[{"id":"https://openalex.org/I2799736854","display_name":"Nanjing Institute of Technology","ror":"https://ror.org/00n6txq60","country_code":"CN","type":"education","lineage":["https://openalex.org/I2799736854"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Shijun Tang","raw_affiliation_strings":["Nanjing Electronic Devices Institute, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Nanjing Electronic Devices Institute, China","institution_ids":["https://openalex.org/I2799736854"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5044518246","display_name":"Chunmei Sun","orcid":null},"institutions":[{"id":"https://openalex.org/I2799736854","display_name":"Nanjing Institute of Technology","ror":"https://ror.org/00n6txq60","country_code":"CN","type":"education","lineage":["https://openalex.org/I2799736854"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Chunmei Sun","raw_affiliation_strings":["Nanjing Electronic Devices Institute, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Nanjing Electronic Devices Institute, China","institution_ids":["https://openalex.org/I2799736854"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.1612,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.51327327,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":"26","issue":null,"first_page":"314","last_page":"318"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/broadband","display_name":"Broadband","score":0.7831887006759644},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.7459384202957153},{"id":"https://openalex.org/keywords/power-bandwidth","display_name":"Power bandwidth","score":0.6171818971633911},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.6169033646583557},{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.5906650424003601},{"id":"https://openalex.org/keywords/power-added-efficiency","display_name":"Power-added efficiency","score":0.5031728148460388},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.4759792387485504},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.44764044880867004},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.40759220719337463},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.39487165212631226},{"id":"https://openalex.org/keywords/rf-power-amplifier","display_name":"RF power amplifier","score":0.3564794659614563},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.28144556283950806},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.2569953203201294},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2558732032775879},{"id":"https://openalex.org/keywords/bandwidth","display_name":"Bandwidth (computing)","score":0.24683108925819397},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.24374878406524658},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.2431250810623169}],"concepts":[{"id":"https://openalex.org/C509933004","wikidata":"https://www.wikidata.org/wiki/Q194163","display_name":"Broadband","level":2,"score":0.7831887006759644},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.7459384202957153},{"id":"https://openalex.org/C191907038","wikidata":"https://www.wikidata.org/wiki/Q7236476","display_name":"Power bandwidth","level":5,"score":0.6171818971633911},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.6169033646583557},{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.5906650424003601},{"id":"https://openalex.org/C129231560","wikidata":"https://www.wikidata.org/wiki/Q7236462","display_name":"Power-added efficiency","level":5,"score":0.5031728148460388},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.4759792387485504},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.44764044880867004},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.40759220719337463},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.39487165212631226},{"id":"https://openalex.org/C196054291","wikidata":"https://www.wikidata.org/wiki/Q7276624","display_name":"RF power amplifier","level":4,"score":0.3564794659614563},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.28144556283950806},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.2569953203201294},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2558732032775879},{"id":"https://openalex.org/C2776257435","wikidata":"https://www.wikidata.org/wiki/Q1576430","display_name":"Bandwidth (computing)","level":2,"score":0.24683108925819397},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.24374878406524658},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.2431250810623169},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1145/3456415.3456467","is_oa":false,"landing_page_url":"https://doi.org/10.1145/3456415.3456467","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 9th International Conference on Communications and Broadband Networking","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.8700000047683716,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":8,"referenced_works":["https://openalex.org/W1977257372","https://openalex.org/W2007311093","https://openalex.org/W2120078152","https://openalex.org/W2152743386","https://openalex.org/W2154802800","https://openalex.org/W2732832567","https://openalex.org/W2928739462","https://openalex.org/W4240551595"],"related_works":["https://openalex.org/W2355154599","https://openalex.org/W2357901411","https://openalex.org/W2091782502","https://openalex.org/W147564418","https://openalex.org/W2591212050","https://openalex.org/W3088179638","https://openalex.org/W3132736789","https://openalex.org/W202103422","https://openalex.org/W2540318259","https://openalex.org/W2191969814"],"abstract_inverted_index":{"In":[0],"this":[1],"paper,":[2],"a":[3],"S-band":[4],"broadband":[5],"internally":[6],"matched":[7],"power":[8,40,47,53],"amplifier":[9],"is":[10,28,41],"designed":[11],"based":[12],"on":[13],"GaN":[14],"HEMT":[15],"using":[16],"internal-matching":[17],"method":[18],"in":[19],"input":[20],"and":[21,52],"output":[22,39],"respectively.":[23],"A":[24],"single-power-supplied":[25],"self-biased":[26],"structure":[27],"adopted":[29],"to":[30,66],"provide":[31],"instantaneous":[32],"protection.":[33],"Test":[34],"results":[35],"show":[36],"that":[37],"the":[38,46,59],"more":[42],"than":[43],"20W":[44],"with":[45],"gain":[48],"of":[49,61],"over":[50,56],"15dB":[51],"added":[54],"efficiency":[55],"58%":[57],"at":[58],"condition":[60],"Vds=32V,continuous":[62],"wave":[63],"from":[64],"2.2GHz":[65],"2.6GHz.":[67]},"counts_by_year":[{"year":2022,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}