{"id":"https://openalex.org/W3128541142","doi":"https://doi.org/10.1145/3443467.3443865","title":"Mechanism Analysis and Experimental Verification of IGBT Avalanche Breakdown","display_name":"Mechanism Analysis and Experimental Verification of IGBT Avalanche Breakdown","publication_year":2020,"publication_date":"2020-11-06","ids":{"openalex":"https://openalex.org/W3128541142","doi":"https://doi.org/10.1145/3443467.3443865","mag":"3128541142"},"language":"en","primary_location":{"id":"doi:10.1145/3443467.3443865","is_oa":false,"landing_page_url":"https://doi.org/10.1145/3443467.3443865","pdf_url":null,"source":{"id":"https://openalex.org/S4306523680","display_name":"Proceedings of the 2020 4th International Conference on Electronic Information Technology and Computer Engineering","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the 2020 4th International Conference on Electronic Information Technology and Computer Engineering","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100696804","display_name":"Bo Wang","orcid":"https://orcid.org/0000-0001-9199-0799"},"institutions":[{"id":"https://openalex.org/I4210105877","display_name":"Wuhan Donghu University","ror":"https://ror.org/017swdq34","country_code":"CN","type":"education","lineage":["https://openalex.org/I4210105877"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Bo Wang","raw_affiliation_strings":["Mechanical and Electrical Engineering, Wuhan Donghu University, Wuhan, China"],"affiliations":[{"raw_affiliation_string":"Mechanical and Electrical Engineering, Wuhan Donghu University, Wuhan, China","institution_ids":["https://openalex.org/I4210105877"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100643167","display_name":"Yong Tang","orcid":"https://orcid.org/0000-0002-9954-4563"},"institutions":[{"id":"https://openalex.org/I4210105877","display_name":"Wuhan Donghu University","ror":"https://ror.org/017swdq34","country_code":"CN","type":"education","lineage":["https://openalex.org/I4210105877"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yong Tang","raw_affiliation_strings":["Mechanical and Electrical Engineering, Wuhan Donghu University, Wuhan, China"],"affiliations":[{"raw_affiliation_string":"Mechanical and Electrical Engineering, Wuhan Donghu University, Wuhan, China","institution_ids":["https://openalex.org/I4210105877"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5100696804"],"corresponding_institution_ids":["https://openalex.org/I4210105877"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.31607247,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"845","last_page":"849"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":0.9980999827384949,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/insulated-gate-bipolar-transistor","display_name":"Insulated-gate bipolar transistor","score":0.9108664989471436},{"id":"https://openalex.org/keywords/avalanche-diode","display_name":"Avalanche diode","score":0.769751787185669},{"id":"https://openalex.org/keywords/avalanche-breakdown","display_name":"Avalanche breakdown","score":0.7250871658325195},{"id":"https://openalex.org/keywords/breakdown-voltage","display_name":"Breakdown voltage","score":0.6869341135025024},{"id":"https://openalex.org/keywords/voltage-spike","display_name":"Voltage spike","score":0.558731198310852},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5149298906326294},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4944889545440674},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.44804537296295166},{"id":"https://openalex.org/keywords/waveform","display_name":"Waveform","score":0.4136626720428467},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.40824106335639954},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.16759231686592102},{"id":"https://openalex.org/keywords/capacitor","display_name":"Capacitor","score":0.09096422791481018}],"concepts":[{"id":"https://openalex.org/C28285623","wikidata":"https://www.wikidata.org/wiki/Q176110","display_name":"Insulated-gate bipolar transistor","level":3,"score":0.9108664989471436},{"id":"https://openalex.org/C95341827","wikidata":"https://www.wikidata.org/wiki/Q175898","display_name":"Avalanche diode","level":4,"score":0.769751787185669},{"id":"https://openalex.org/C33652038","wikidata":"https://www.wikidata.org/wiki/Q175906","display_name":"Avalanche breakdown","level":4,"score":0.7250871658325195},{"id":"https://openalex.org/C119321828","wikidata":"https://www.wikidata.org/wiki/Q1267190","display_name":"Breakdown voltage","level":3,"score":0.6869341135025024},{"id":"https://openalex.org/C200980170","wikidata":"https://www.wikidata.org/wiki/Q2025787","display_name":"Voltage spike","level":4,"score":0.558731198310852},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5149298906326294},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4944889545440674},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.44804537296295166},{"id":"https://openalex.org/C197424946","wikidata":"https://www.wikidata.org/wiki/Q1165717","display_name":"Waveform","level":3,"score":0.4136626720428467},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.40824106335639954},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.16759231686592102},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.09096422791481018}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1145/3443467.3443865","is_oa":false,"landing_page_url":"https://doi.org/10.1145/3443467.3443865","pdf_url":null,"source":{"id":"https://openalex.org/S4306523680","display_name":"Proceedings of the 2020 4th International Conference on Electronic Information Technology and Computer Engineering","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the 2020 4th International Conference on Electronic Information Technology and Computer Engineering","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.5,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":2,"referenced_works":["https://openalex.org/W2002071358","https://openalex.org/W2170461862"],"related_works":["https://openalex.org/W2171642780","https://openalex.org/W2151805512","https://openalex.org/W2170908383","https://openalex.org/W260021465","https://openalex.org/W1989882053","https://openalex.org/W2101068421","https://openalex.org/W2130878627","https://openalex.org/W2043131647","https://openalex.org/W2007282075","https://openalex.org/W2125115493"],"abstract_inverted_index":{"Avalanche":[0],"breakdown":[1,36,46,90,96],"voltage":[2,22,47,71,84],"of":[3,24,44,48,62,98],"insulated":[4],"gate":[5],"bipolar":[6],"transistor(IGBT)":[7],"is":[8,73,80,100],"an":[9],"important":[10],"electrical":[11],"parameter":[12],"in":[13,65],"the":[14,19,25,41,60,66,78,94],"device":[15],"manual,":[16],"which":[17],"reflects":[18],"forward":[20],"blocking":[21],"capability":[23],"device.":[26],"Based":[27],"on":[28],"IGBT":[29,49,79,99],"cell":[30],"structure":[31],"and":[32,56,68,85],"PN":[33],"junction":[34],"avalanche":[35,45,89,95],"principle,":[37],"this":[38],"paper":[39],"analyzes":[40],"calculation":[42],"expressions":[43],"with":[50],"three":[51],"common":[52],"structures:":[53],"non-punch-through(NPT),":[54],"punch-through(PT)":[55],"field-terminated(FS).":[57],"Due":[58],"to":[59,75],"existence":[61],"distributed":[63],"inductance":[64],"circuit":[67],"device,":[69],"a":[70],"spike":[72],"easy":[74],"occur":[76],"when":[77],"turned":[81],"off.":[82],"The":[83],"current":[86],"waveforms":[87],"during":[88],"are":[91],"analyzed.":[92],"Finally,":[93],"mechanism":[97],"verified":[101],"by":[102],"experiments.":[103]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}