{"id":"https://openalex.org/W2978700850","doi":"https://doi.org/10.1145/3338852.3339865","title":"An innovative strategy to reduce die area of robust OTA by using iMTGSPICE and diamond layout style for MOSFETs","display_name":"An innovative strategy to reduce die area of robust OTA by using iMTGSPICE and diamond layout style for MOSFETs","publication_year":2019,"publication_date":"2019-08-26","ids":{"openalex":"https://openalex.org/W2978700850","doi":"https://doi.org/10.1145/3338852.3339865","mag":"2978700850"},"language":"en","primary_location":{"id":"doi:10.1145/3338852.3339865","is_oa":false,"landing_page_url":"https://doi.org/10.1145/3338852.3339865","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the 32nd Symposium on Integrated Circuits and Systems Design","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5022483965","display_name":"Jos\u00e9 Roberto Banin J\u00fanior","orcid":"https://orcid.org/0000-0003-1418-4093"},"institutions":[{"id":"https://openalex.org/I139221136","display_name":"Centro Universit\u00e1rio FEI","ror":"https://ror.org/007kf5222","country_code":"BR","type":"education","lineage":["https://openalex.org/I139221136"]}],"countries":["BR"],"is_corresponding":true,"raw_author_name":"Jos\u00e9 Roberto Banin J\u00fanior","raw_affiliation_strings":["FEI University Center, S\u00e3o B. do Campo, SP, Brazil"],"affiliations":[{"raw_affiliation_string":"FEI University Center, S\u00e3o B. do Campo, SP, Brazil","institution_ids":["https://openalex.org/I139221136"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5075015699","display_name":"Rodrigo Alves de Lima Moreto","orcid":"https://orcid.org/0000-0002-7527-6517"},"institutions":[{"id":"https://openalex.org/I139221136","display_name":"Centro Universit\u00e1rio FEI","ror":"https://ror.org/007kf5222","country_code":"BR","type":"education","lineage":["https://openalex.org/I139221136"]}],"countries":["BR"],"is_corresponding":false,"raw_author_name":"Rodrigo Alves de Lima Moreto","raw_affiliation_strings":["FEI University Center, S\u00e3o B. do Campo, SP, Brazil"],"affiliations":[{"raw_affiliation_string":"FEI University Center, S\u00e3o B. do Campo, SP, Brazil","institution_ids":["https://openalex.org/I139221136"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5057701797","display_name":"Gabriel Augusto da Silva","orcid":null},"institutions":[{"id":"https://openalex.org/I139221136","display_name":"Centro Universit\u00e1rio FEI","ror":"https://ror.org/007kf5222","country_code":"BR","type":"education","lineage":["https://openalex.org/I139221136"]}],"countries":["BR"],"is_corresponding":false,"raw_author_name":"Gabriel Augusto da Silva","raw_affiliation_strings":["FEI University Center, S\u00e3o B. do Campo, SP, Brazil"],"affiliations":[{"raw_affiliation_string":"FEI University Center, S\u00e3o B. do Campo, SP, Brazil","institution_ids":["https://openalex.org/I139221136"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5075626456","display_name":"Carlos Eduardo Thomaz","orcid":"https://orcid.org/0000-0001-5566-1963"},"institutions":[{"id":"https://openalex.org/I139221136","display_name":"Centro Universit\u00e1rio FEI","ror":"https://ror.org/007kf5222","country_code":"BR","type":"education","lineage":["https://openalex.org/I139221136"]}],"countries":["BR"],"is_corresponding":false,"raw_author_name":"Carlos Eduardo Thomaz","raw_affiliation_strings":["FEI University Center, S\u00e3o B. do Campo, SP, Brazil"],"affiliations":[{"raw_affiliation_string":"FEI University Center, S\u00e3o B. do Campo, SP, Brazil","institution_ids":["https://openalex.org/I139221136"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5016699988","display_name":"Salvador Pinillos Gimenez","orcid":"https://orcid.org/0000-0002-3616-9559"},"institutions":[{"id":"https://openalex.org/I139221136","display_name":"Centro Universit\u00e1rio FEI","ror":"https://ror.org/007kf5222","country_code":"BR","type":"education","lineage":["https://openalex.org/I139221136"]}],"countries":["BR"],"is_corresponding":false,"raw_author_name":"Salvador Pinillos Gimenez","raw_affiliation_strings":["FEI University Center, S\u00e3o B. do Campo, SP, Brazil"],"affiliations":[{"raw_affiliation_string":"FEI University Center, S\u00e3o B. do Campo, SP, Brazil","institution_ids":["https://openalex.org/I139221136"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5022483965"],"corresponding_institution_ids":["https://openalex.org/I139221136"],"apc_list":null,"apc_paid":null,"fwci":0.3577,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.61378662,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"6"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11338","display_name":"Advancements in Photolithography Techniques","score":0.9987999796867371,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.8117554783821106},{"id":"https://openalex.org/keywords/transconductance","display_name":"Transconductance","score":0.749741792678833},{"id":"https://openalex.org/keywords/die","display_name":"Die (integrated circuit)","score":0.6135334968566895},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.5188209414482117},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5167657136917114},{"id":"https://openalex.org/keywords/diamond","display_name":"Diamond","score":0.493052214384079},{"id":"https://openalex.org/keywords/reduction","display_name":"Reduction (mathematics)","score":0.4745505750179291},{"id":"https://openalex.org/keywords/integrated-circuit","display_name":"Integrated circuit","score":0.4518430531024933},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3523680567741394},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.34210216999053955},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.31878146529197693},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.2648269236087799},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.22778120636940002},{"id":"https://openalex.org/keywords/mechanical-engineering","display_name":"Mechanical engineering","score":0.07793515920639038},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.07488974928855896},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.059551388025283813}],"concepts":[{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.8117554783821106},{"id":"https://openalex.org/C2779283907","wikidata":"https://www.wikidata.org/wiki/Q1632964","display_name":"Transconductance","level":4,"score":0.749741792678833},{"id":"https://openalex.org/C111106434","wikidata":"https://www.wikidata.org/wiki/Q1072430","display_name":"Die (integrated circuit)","level":2,"score":0.6135334968566895},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.5188209414482117},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5167657136917114},{"id":"https://openalex.org/C2776921476","wikidata":"https://www.wikidata.org/wiki/Q5283","display_name":"Diamond","level":2,"score":0.493052214384079},{"id":"https://openalex.org/C111335779","wikidata":"https://www.wikidata.org/wiki/Q3454686","display_name":"Reduction (mathematics)","level":2,"score":0.4745505750179291},{"id":"https://openalex.org/C530198007","wikidata":"https://www.wikidata.org/wiki/Q80831","display_name":"Integrated circuit","level":2,"score":0.4518430531024933},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3523680567741394},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.34210216999053955},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.31878146529197693},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.2648269236087799},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.22778120636940002},{"id":"https://openalex.org/C78519656","wikidata":"https://www.wikidata.org/wiki/Q101333","display_name":"Mechanical engineering","level":1,"score":0.07793515920639038},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.07488974928855896},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.059551388025283813},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1145/3338852.3339865","is_oa":false,"landing_page_url":"https://doi.org/10.1145/3338852.3339865","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the 32nd Symposium on Integrated Circuits and Systems Design","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Industry, innovation and infrastructure","id":"https://metadata.un.org/sdg/9","score":0.5600000023841858}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":19,"referenced_works":["https://openalex.org/W304026244","https://openalex.org/W326588891","https://openalex.org/W1528549966","https://openalex.org/W1553373771","https://openalex.org/W1980263206","https://openalex.org/W2026260354","https://openalex.org/W2028017617","https://openalex.org/W2033756824","https://openalex.org/W2046328375","https://openalex.org/W2062164238","https://openalex.org/W2090130832","https://openalex.org/W2160785341","https://openalex.org/W2167034725","https://openalex.org/W2312597752","https://openalex.org/W2493943245","https://openalex.org/W2546926269","https://openalex.org/W2585329946","https://openalex.org/W2895593336","https://openalex.org/W2900799046"],"related_works":["https://openalex.org/W2548900738","https://openalex.org/W2366149815","https://openalex.org/W2024541028","https://openalex.org/W2551134471","https://openalex.org/W2536554518","https://openalex.org/W2157112210","https://openalex.org/W2166559311","https://openalex.org/W2544451817","https://openalex.org/W2501578203","https://openalex.org/W2113108952"],"abstract_inverted_index":{"This":[0],"paper":[1],"describes":[2],"a":[3,11,27,75,84],"pioneering":[4],"design":[5],"and":[6,35],"optimization":[7,47],"methodology":[8],"that":[9],"provides":[10],"remarkable":[12,76],"die":[13,81],"area":[14,82],"reduction":[15,77],"of":[16,44,71,78,83,92,98],"robust":[17,85],"analog":[18,50],"Complementary":[19],"Metal-Oxide-Semiconductor":[20],"(CMOS)":[21],"Integrated":[22],"Circuits":[23],"(ICs)":[24],"by":[25,61],"using":[26,62],"computational":[28],"tool":[29],"based":[30],"on":[31],"artificial":[32],"intelligence":[33],"(iMTGSPICE)":[34],"the":[36,79,90,103],"Diamond":[37,93],"layout":[38],"style":[39],"for":[40,49,55],"MOSFETs.":[41,109],"The":[42,68],"validation":[43],"this":[45,72],"innovative":[46],"strategy":[48],"CMOS":[51,65],"ICs":[52,66],"was":[53],"made":[54],"an":[56],"Operational":[57],"Transconductance":[58],"Amplifiers":[59],"(OTA)":[60],"180":[63],"nm":[64],"technology.":[67],"main":[69],"finding":[70],"work":[73],"reports":[74],"total":[80],"OTA":[86],"around":[87],"30%,":[88],"regarding":[89],"use":[91],"MOSFETs":[94],"with":[95,106],"alfa":[96],"angles":[97],"45\u00b0":[99],"when":[100],"compared":[101],"to":[102],"one":[104],"implemented":[105],"standard":[107],"rectangular":[108]},"counts_by_year":[{"year":2022,"cited_by_count":2},{"year":2020,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}