{"id":"https://openalex.org/W2954068246","doi":"https://doi.org/10.1145/3330089.3330471","title":"Device and Circuit Level Performance Analysis of a New Nanoscale DGJL MOSFET Design Using an Accurate Numerical Computation","display_name":"Device and Circuit Level Performance Analysis of a New Nanoscale DGJL MOSFET Design Using an Accurate Numerical Computation","publication_year":2018,"publication_date":"2018-12-26","ids":{"openalex":"https://openalex.org/W2954068246","doi":"https://doi.org/10.1145/3330089.3330471","mag":"2954068246"},"language":"en","primary_location":{"id":"doi:10.1145/3330089.3330471","is_oa":false,"landing_page_url":"https://doi.org/10.1145/3330089.3330471","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the 7th International Conference on Software Engineering and New Technologies","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5058994417","display_name":"Elasaad Chebaki","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Elasaad Chebaki","raw_affiliation_strings":["Advanced Electronics Laboratory (LEA), Department of Electronics, Batna, Algeria"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Electronics Laboratory (LEA), Department of Electronics, Batna, Algeria","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5044226348","display_name":"F. Djeffal","orcid":"https://orcid.org/0000-0003-0742-5864"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Faycal Djeffal","raw_affiliation_strings":["Advanced Electronics Laboratory (LEA), Department of Electronics, Batna, Algeria"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Electronics Laboratory (LEA), Department of Electronics, Batna, Algeria","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5074477100","display_name":"Toufik Bentrcia","orcid":"https://orcid.org/0000-0001-8069-314X"},"institutions":[{"id":"https://openalex.org/I162489102","display_name":"University of Batna 1","ror":"https://ror.org/04hrbe508","country_code":"DZ","type":"education","lineage":["https://openalex.org/I162489102"]}],"countries":["DZ"],"is_corresponding":false,"raw_author_name":"Toufik Bentrcia","raw_affiliation_strings":["Department of Physics, University of Batna 1, Batna, Algeria"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Physics, University of Batna 1, Batna, Algeria","institution_ids":["https://openalex.org/I162489102"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5029535671","display_name":"H. Ferhati","orcid":null},"institutions":[{"id":"https://openalex.org/I162489102","display_name":"University of Batna 1","ror":"https://ror.org/04hrbe508","country_code":"DZ","type":"education","lineage":["https://openalex.org/I162489102"]}],"countries":["DZ"],"is_corresponding":false,"raw_author_name":"Hichem Ferhati","raw_affiliation_strings":["Advanced Electronics Laboratory (LEA), Department of Electronics, University of Batna 2, Batna, Algeria"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Electronics Laboratory (LEA), Department of Electronics, University of Batna 2, Batna, Algeria","institution_ids":["https://openalex.org/I162489102"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.20466231,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"5"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9962000250816345,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.7603923678398132},{"id":"https://openalex.org/keywords/inverter","display_name":"Inverter","score":0.5857716798782349},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5549705624580383},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5499120950698853},{"id":"https://openalex.org/keywords/computation","display_name":"Computation","score":0.5184190273284912},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.5111022591590881},{"id":"https://openalex.org/keywords/circuit-design","display_name":"Circuit design","score":0.4617239832878113},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.4127996563911438},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3172837495803833},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.24425244331359863},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.2044144868850708},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.18079224228858948},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.0953652560710907}],"concepts":[{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.7603923678398132},{"id":"https://openalex.org/C11190779","wikidata":"https://www.wikidata.org/wiki/Q664575","display_name":"Inverter","level":3,"score":0.5857716798782349},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5549705624580383},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5499120950698853},{"id":"https://openalex.org/C45374587","wikidata":"https://www.wikidata.org/wiki/Q12525525","display_name":"Computation","level":2,"score":0.5184190273284912},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.5111022591590881},{"id":"https://openalex.org/C190560348","wikidata":"https://www.wikidata.org/wiki/Q3245116","display_name":"Circuit design","level":2,"score":0.4617239832878113},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.4127996563911438},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3172837495803833},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.24425244331359863},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.2044144868850708},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.18079224228858948},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.0953652560710907},{"id":"https://openalex.org/C11413529","wikidata":"https://www.wikidata.org/wiki/Q8366","display_name":"Algorithm","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1145/3330089.3330471","is_oa":false,"landing_page_url":"https://doi.org/10.1145/3330089.3330471","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the 7th International Conference on Software Engineering and New Technologies","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/9","display_name":"Industry, innovation and infrastructure","score":0.44999998807907104}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":12,"referenced_works":["https://openalex.org/W1973421655","https://openalex.org/W1994195018","https://openalex.org/W2068945108","https://openalex.org/W2085145591","https://openalex.org/W2091226303","https://openalex.org/W2116048161","https://openalex.org/W2136969437","https://openalex.org/W2143152577","https://openalex.org/W2213474302","https://openalex.org/W2271706785","https://openalex.org/W2460353635","https://openalex.org/W3147083597"],"related_works":["https://openalex.org/W2367891013","https://openalex.org/W2007108787","https://openalex.org/W2084837496","https://openalex.org/W2103570580","https://openalex.org/W2373210218","https://openalex.org/W3147659851","https://openalex.org/W3119861251","https://openalex.org/W3019679473","https://openalex.org/W2891188466","https://openalex.org/W2226796451"],"abstract_inverted_index":{"This":[0],"paper":[1],"shows":[2],"a":[3],"new":[4],"Double":[5],"Gate":[6],"Junctionless":[7],"(DGJL)":[8],"MOSFET":[9,102],"design":[10,86,109],"based":[11,37,99],"on":[12,38,88,100,148],"both":[13],"highly":[14,77],"doped":[15,78],"drain/source":[16],"extensions":[17],"and":[18,50,76,125],"gate":[19,74],"material":[20],"engineering.":[21],"The":[22,81],"device":[23],"electrical":[24],"behavior":[25],"at":[26],"the":[27,51,70,84,89,92,107,123,129,141,144,149,159],"nanoscale":[28,161],"level":[29],"is":[30,103],"investigated":[31],"using":[32],"an":[33,111],"accurate":[34],"numerical":[35],"computation":[36],"TCAD":[39],"simulation":[40,136],"provided":[41],"by":[42],"ATLAS":[43],"2D":[44],"simulator,":[45],"where":[46,106],"quantum":[47],"confinement":[48],"effects":[49],"modified":[52],"drift-diffusion":[53],"transport":[54],"model":[55],"that":[56],"takes":[57],"into":[58],"account":[59],"SCEs":[60],"are":[61,66,154],"included.":[62],"Circuit":[63],"performance":[64,90,127],"parameters":[65],"also":[67,104],"developed":[68],"incorporating":[69],"impact":[71],"of":[72,83,91,128,143],"dual-material":[73],"engineering":[75],"extension":[79],"regions.":[80],"effect":[82],"proposed":[85,108],"amendments":[87],"common":[93],"source":[94],"single":[95],"stage":[96],"amplifier":[97,117],"circuit":[98,126],"DGJL":[101],"performed,":[105],"exhibits":[110],"outstanding":[112],"capability":[113],"for":[114,140],"offering":[115],"improved":[116],"properties.":[118],"In":[119],"order":[120],"to":[121],"analyze":[122],"characteristics":[124],"device,":[130],"we":[131],"have":[132],"adopted":[133],"mixed":[134],"mode":[135],"under":[137],"Silvaco":[138],"environment":[139],"implementation":[142],"inverter":[145],"circuit.":[146],"Based":[147],"numerical,":[150],"outcomes":[151],"satisfactory":[152],"results":[153],"recorded":[155],"in":[156],"comparison":[157],"with":[158],"conventional":[160],"junctionless":[162],"design.":[163]},"counts_by_year":[],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}