{"id":"https://openalex.org/W2725753878","doi":"https://doi.org/10.1145/3060579","title":"Improving Performance under Process and Voltage Variations in Near-Threshold Computing Using 3D ICs","display_name":"Improving Performance under Process and Voltage Variations in Near-Threshold Computing Using 3D ICs","publication_year":2017,"publication_date":"2017-06-29","ids":{"openalex":"https://openalex.org/W2725753878","doi":"https://doi.org/10.1145/3060579","mag":"2725753878"},"language":"en","primary_location":{"id":"doi:10.1145/3060579","is_oa":false,"landing_page_url":"https://doi.org/10.1145/3060579","pdf_url":null,"source":{"id":"https://openalex.org/S96198239","display_name":"ACM Journal on Emerging Technologies in Computing Systems","issn_l":"1550-4832","issn":["1550-4832","1550-4840"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319798","host_organization_name":"Association for Computing Machinery","host_organization_lineage":["https://openalex.org/P4310319798"],"host_organization_lineage_names":["Association for Computing Machinery"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ACM Journal on Emerging Technologies in Computing Systems","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5066713236","display_name":"Sandeep Kumar Samal","orcid":"https://orcid.org/0000-0002-2636-9928"},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Sandeep Kumar Samal","raw_affiliation_strings":["Georgia Institute of Technology, Atlanta, GA"],"raw_orcid":"https://orcid.org/0000-0002-2636-9928","affiliations":[{"raw_affiliation_string":"Georgia Institute of Technology, Atlanta, GA","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100343003","display_name":"Guoqing Chen","orcid":"https://orcid.org/0000-0002-4841-0741"},"institutions":[{"id":"https://openalex.org/I1311921367","display_name":"Advanced Micro Devices (Canada)","ror":"https://ror.org/02yh0k313","country_code":"CA","type":"company","lineage":["https://openalex.org/I1311921367","https://openalex.org/I4210137977"]}],"countries":["CA"],"is_corresponding":false,"raw_author_name":"Guoqing Chen","raw_affiliation_strings":["Advanced Micro Devices"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Micro Devices","institution_ids":["https://openalex.org/I1311921367"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5052950521","display_name":"Sung Kyu Lim","orcid":"https://orcid.org/0000-0002-2267-5282"},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Sung Kyu Lim","raw_affiliation_strings":["Georgia Institute of Technology, Atlanta, GA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Georgia Institute of Technology, Atlanta, GA","institution_ids":["https://openalex.org/I130701444"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5066713236"],"corresponding_institution_ids":["https://openalex.org/I130701444"],"apc_list":null,"apc_paid":null,"fwci":0.5844,"has_fulltext":false,"cited_by_count":5,"citation_normalized_percentile":{"value":0.6965329,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":"13","issue":"4","first_page":"1","last_page":"18"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.6021410822868347},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.5476488471031189},{"id":"https://openalex.org/keywords/die","display_name":"Die (integrated circuit)","score":0.5347422957420349},{"id":"https://openalex.org/keywords/three-dimensional-integrated-circuit","display_name":"Three-dimensional integrated circuit","score":0.5241216421127319},{"id":"https://openalex.org/keywords/chip","display_name":"Chip","score":0.5009303092956543},{"id":"https://openalex.org/keywords/voltage-drop","display_name":"Voltage drop","score":0.48990124464035034},{"id":"https://openalex.org/keywords/process-corners","display_name":"Process corners","score":0.48408448696136475},{"id":"https://openalex.org/keywords/integrated-circuit","display_name":"Integrated circuit","score":0.48251649737358093},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.4820783734321594},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4696575701236725},{"id":"https://openalex.org/keywords/power-network-design","display_name":"Power network design","score":0.43939775228500366},{"id":"https://openalex.org/keywords/integrated-circuit-design","display_name":"Integrated circuit design","score":0.43649208545684814},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.43437671661376953},{"id":"https://openalex.org/keywords/low-voltage","display_name":"Low voltage","score":0.42153021693229675},{"id":"https://openalex.org/keywords/sensitivity","display_name":"Sensitivity (control systems)","score":0.420303076505661},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.414874792098999},{"id":"https://openalex.org/keywords/process-variation","display_name":"Process variation","score":0.4146023094654083},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3672977685928345},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.08341601490974426}],"concepts":[{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.6021410822868347},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.5476488471031189},{"id":"https://openalex.org/C111106434","wikidata":"https://www.wikidata.org/wiki/Q1072430","display_name":"Die (integrated circuit)","level":2,"score":0.5347422957420349},{"id":"https://openalex.org/C59088047","wikidata":"https://www.wikidata.org/wiki/Q229370","display_name":"Three-dimensional integrated circuit","level":3,"score":0.5241216421127319},{"id":"https://openalex.org/C165005293","wikidata":"https://www.wikidata.org/wiki/Q1074500","display_name":"Chip","level":2,"score":0.5009303092956543},{"id":"https://openalex.org/C82178898","wikidata":"https://www.wikidata.org/wiki/Q166839","display_name":"Voltage drop","level":3,"score":0.48990124464035034},{"id":"https://openalex.org/C192615534","wikidata":"https://www.wikidata.org/wiki/Q7247268","display_name":"Process corners","level":3,"score":0.48408448696136475},{"id":"https://openalex.org/C530198007","wikidata":"https://www.wikidata.org/wiki/Q80831","display_name":"Integrated circuit","level":2,"score":0.48251649737358093},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4820783734321594},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4696575701236725},{"id":"https://openalex.org/C164565468","wikidata":"https://www.wikidata.org/wiki/Q7236535","display_name":"Power network design","level":3,"score":0.43939775228500366},{"id":"https://openalex.org/C74524168","wikidata":"https://www.wikidata.org/wiki/Q1074539","display_name":"Integrated circuit design","level":2,"score":0.43649208545684814},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.43437671661376953},{"id":"https://openalex.org/C128624480","wikidata":"https://www.wikidata.org/wiki/Q1504817","display_name":"Low voltage","level":3,"score":0.42153021693229675},{"id":"https://openalex.org/C21200559","wikidata":"https://www.wikidata.org/wiki/Q7451068","display_name":"Sensitivity (control systems)","level":2,"score":0.420303076505661},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.414874792098999},{"id":"https://openalex.org/C93389723","wikidata":"https://www.wikidata.org/wiki/Q7247313","display_name":"Process variation","level":3,"score":0.4146023094654083},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3672977685928345},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.08341601490974426},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C78519656","wikidata":"https://www.wikidata.org/wiki/Q101333","display_name":"Mechanical engineering","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1145/3060579","is_oa":false,"landing_page_url":"https://doi.org/10.1145/3060579","pdf_url":null,"source":{"id":"https://openalex.org/S96198239","display_name":"ACM Journal on Emerging Technologies in Computing Systems","issn_l":"1550-4832","issn":["1550-4832","1550-4840"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319798","host_organization_name":"Association for Computing Machinery","host_organization_lineage":["https://openalex.org/P4310319798"],"host_organization_lineage_names":["Association for Computing Machinery"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ACM Journal on Emerging Technologies in Computing Systems","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.8999999761581421}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":26,"referenced_works":["https://openalex.org/W1671863340","https://openalex.org/W1972573758","https://openalex.org/W1998525920","https://openalex.org/W2003121308","https://openalex.org/W2038377112","https://openalex.org/W2042579592","https://openalex.org/W2065173340","https://openalex.org/W2073989151","https://openalex.org/W2091531792","https://openalex.org/W2097193789","https://openalex.org/W2097840688","https://openalex.org/W2098514005","https://openalex.org/W2099278122","https://openalex.org/W2099751314","https://openalex.org/W2122915341","https://openalex.org/W2123661206","https://openalex.org/W2140760996","https://openalex.org/W2148292324","https://openalex.org/W2153753826","https://openalex.org/W2155707315","https://openalex.org/W2168159483","https://openalex.org/W2205898907","https://openalex.org/W3146255990","https://openalex.org/W4213079971","https://openalex.org/W4232123023","https://openalex.org/W4252531621"],"related_works":["https://openalex.org/W2525077515","https://openalex.org/W2118152793","https://openalex.org/W2004937362","https://openalex.org/W2141625582","https://openalex.org/W4388000032","https://openalex.org/W2162806231","https://openalex.org/W2146176401","https://openalex.org/W2080140894","https://openalex.org/W2037625031","https://openalex.org/W2129294024"],"abstract_inverted_index":{"Near-threshold":[0],"computing":[1],"(NTC)":[2],"circuits":[3],"have":[4],"been":[5],"shown":[6],"to":[7,111,115,132,156,187,196],"offer":[8],"significant":[9],"energy":[10],"efficiency":[11],"and":[12,27,161],"power":[13,159],"benefits":[14],"but":[15,181],"with":[16,52,61],"a":[17,48,53],"huge":[18],"performance":[19,22,90,101,151,173],"penalty.":[20],"This":[21,94,192],"loss":[23],"exacerbates":[24],"if":[25],"process":[26],"voltage":[28,108,133],"variations":[29],"are":[30],"considered.":[31],"In":[32],"this":[33,44],"article,":[34],"we":[35],"demonstrate":[36],"that":[37,76,126,143],"three-dimensional":[38],"(3D)":[39],"IC":[40,64,78,83,105,149,178,189,204],"technology":[41],"can":[42],"overcome":[43],"limitation.":[45],"We":[46],"present":[47],"detailed":[49],"case":[50,74],"study":[51,70,141],"28nm":[54],"commercial-grade":[55],"core":[56],"at":[57,91,106,118,135],"0.6V":[58],"operation":[59],"optimized":[60],"various":[62],"3D":[63,77,104,177,203],"physical":[65],"design":[66,80],"methods.":[67],"First,":[68],"our":[69,139],"under":[71],"the":[72,99,157,197],"deterministic":[73],"shows":[75],"NTC":[79,84,136,150,179,190,205],"outperforms":[81],"2D":[82,188],"by":[85],"29.5%":[86],"in":[87,176,202],"terms":[88],"of":[89,103],"comparable":[92],"energy.":[93],"is":[95,123,129,152,174,183,193],"significantly":[96],"higher":[97,112],"than":[98],"12.8%":[100],"benefit":[102],"nominal":[107],"supplies":[109],"due":[110,155,195],"delay":[113,128],"sensitivity":[114],"input":[116],"slew":[117],"lower":[119,163],"voltages.":[120],"Second,":[121],"it":[122,182],"well":[124],"demonstrated":[125],"transistor":[127],"more":[130],"sensitive":[131],"changes":[134],"operation.":[137],"However,":[138],"full-chip":[140,172],"reveals":[142],"IR":[144,164],"drop":[145,165],"effect":[146],"on":[147,171],"2D/3D":[148],"not":[153,184],"severe":[154],"low":[158],"consumption":[160],"hence":[162],"values.":[166],"Third,":[167],"die-to-die":[168],"variation":[169],"impact":[170],"visible":[175],"designs,":[180],"worse":[185],"compared":[186],"designs.":[191,206],"mainly":[194],"shorter":[198],"critical":[199],"path":[200],"length":[201]},"counts_by_year":[{"year":2021,"cited_by_count":1},{"year":2019,"cited_by_count":2},{"year":2018,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}