{"id":"https://openalex.org/W2135391845","doi":"https://doi.org/10.1145/2602157","title":"Effect of the Active Layer on Carbon Nanotube-Based Cells for Yield Analysis","display_name":"Effect of the Active Layer on Carbon Nanotube-Based Cells for Yield Analysis","publication_year":2014,"publication_date":"2014-05-01","ids":{"openalex":"https://openalex.org/W2135391845","doi":"https://doi.org/10.1145/2602157","mag":"2135391845"},"language":"en","primary_location":{"id":"doi:10.1145/2602157","is_oa":false,"landing_page_url":"https://doi.org/10.1145/2602157","pdf_url":null,"source":{"id":"https://openalex.org/S96198239","display_name":"ACM Journal on Emerging Technologies in Computing Systems","issn_l":"1550-4832","issn":["1550-4832","1550-4840"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319798","host_organization_name":"Association for Computing Machinery","host_organization_lineage":["https://openalex.org/P4310319798"],"host_organization_lineage_names":["Association for Computing Machinery"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ACM Journal on Emerging Technologies in Computing Systems","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5043669553","display_name":"Matthias Beste","orcid":null},"institutions":[{"id":"https://openalex.org/I102335020","display_name":"Karlsruhe Institute of Technology","ror":"https://ror.org/04t3en479","country_code":"DE","type":"education","lineage":["https://openalex.org/I102335020","https://openalex.org/I1305996414"]}],"countries":["DE"],"is_corresponding":true,"raw_author_name":"Matthias Beste","raw_affiliation_strings":["Karlsruhe Institute of Technology","Karlsruhe Institute of technology"],"affiliations":[{"raw_affiliation_string":"Karlsruhe Institute of Technology","institution_ids":["https://openalex.org/I102335020"]},{"raw_affiliation_string":"Karlsruhe Institute of technology","institution_ids":["https://openalex.org/I102335020"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5064445713","display_name":"Mehdi B. Tahoori","orcid":"https://orcid.org/0000-0002-8829-5610"},"institutions":[{"id":"https://openalex.org/I102335020","display_name":"Karlsruhe Institute of Technology","ror":"https://ror.org/04t3en479","country_code":"DE","type":"education","lineage":["https://openalex.org/I102335020","https://openalex.org/I1305996414"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Mehdi B. Tahoori","raw_affiliation_strings":["Karlsruhe Institute of Technology","Karlsruhe Institute of technology"],"affiliations":[{"raw_affiliation_string":"Karlsruhe Institute of Technology","institution_ids":["https://openalex.org/I102335020"]},{"raw_affiliation_string":"Karlsruhe Institute of technology","institution_ids":["https://openalex.org/I102335020"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5043669553"],"corresponding_institution_ids":["https://openalex.org/I102335020"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.10709914,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"10","issue":"4","first_page":"1","last_page":"19"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10074","display_name":"Carbon Nanotubes in Composites","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10074","display_name":"Carbon Nanotubes in Composites","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9934999942779541,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":0.993399977684021,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/carbon-nanotube-field-effect-transistor","display_name":"Carbon nanotube field-effect transistor","score":0.8936609029769897},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.49145472049713135},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.48797959089279175},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4801335036754608},{"id":"https://openalex.org/keywords/carbon-nanotube","display_name":"Carbon nanotube","score":0.4563908576965332},{"id":"https://openalex.org/keywords/active-layer","display_name":"Active layer","score":0.444598913192749},{"id":"https://openalex.org/keywords/robustness","display_name":"Robustness (evolution)","score":0.4434537887573242},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.43696293234825134},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.431173175573349},{"id":"https://openalex.org/keywords/fabrication","display_name":"Fabrication","score":0.41935789585113525},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.4013406038284302},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.3204141855239868},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.32026445865631104},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2549043893814087},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.12270274758338928},{"id":"https://openalex.org/keywords/thin-film-transistor","display_name":"Thin-film transistor","score":0.10984870791435242}],"concepts":[{"id":"https://openalex.org/C58916441","wikidata":"https://www.wikidata.org/wiki/Q1778563","display_name":"Carbon nanotube field-effect transistor","level":5,"score":0.8936609029769897},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.49145472049713135},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.48797959089279175},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4801335036754608},{"id":"https://openalex.org/C513720949","wikidata":"https://www.wikidata.org/wiki/Q1778729","display_name":"Carbon nanotube","level":2,"score":0.4563908576965332},{"id":"https://openalex.org/C2776026197","wikidata":"https://www.wikidata.org/wiki/Q201890","display_name":"Active layer","level":4,"score":0.444598913192749},{"id":"https://openalex.org/C63479239","wikidata":"https://www.wikidata.org/wiki/Q7353546","display_name":"Robustness (evolution)","level":3,"score":0.4434537887573242},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.43696293234825134},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.431173175573349},{"id":"https://openalex.org/C136525101","wikidata":"https://www.wikidata.org/wiki/Q5428139","display_name":"Fabrication","level":3,"score":0.41935789585113525},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.4013406038284302},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.3204141855239868},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.32026445865631104},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2549043893814087},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.12270274758338928},{"id":"https://openalex.org/C87359718","wikidata":"https://www.wikidata.org/wiki/Q1271916","display_name":"Thin-film transistor","level":3,"score":0.10984870791435242},{"id":"https://openalex.org/C142724271","wikidata":"https://www.wikidata.org/wiki/Q7208","display_name":"Pathology","level":1,"score":0.0},{"id":"https://openalex.org/C71924100","wikidata":"https://www.wikidata.org/wiki/Q11190","display_name":"Medicine","level":0,"score":0.0},{"id":"https://openalex.org/C55493867","wikidata":"https://www.wikidata.org/wiki/Q7094","display_name":"Biochemistry","level":1,"score":0.0},{"id":"https://openalex.org/C104317684","wikidata":"https://www.wikidata.org/wiki/Q7187","display_name":"Gene","level":2,"score":0.0},{"id":"https://openalex.org/C204787440","wikidata":"https://www.wikidata.org/wiki/Q188504","display_name":"Alternative medicine","level":2,"score":0.0},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1145/2602157","is_oa":false,"landing_page_url":"https://doi.org/10.1145/2602157","pdf_url":null,"source":{"id":"https://openalex.org/S96198239","display_name":"ACM Journal on Emerging Technologies in Computing Systems","issn_l":"1550-4832","issn":["1550-4832","1550-4840"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319798","host_organization_name":"Association for Computing Machinery","host_organization_lineage":["https://openalex.org/P4310319798"],"host_organization_lineage_names":["Association for Computing Machinery"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ACM Journal on Emerging Technologies in Computing Systems","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":28,"referenced_works":["https://openalex.org/W1874694348","https://openalex.org/W1975709455","https://openalex.org/W1982371556","https://openalex.org/W1998945124","https://openalex.org/W2006056114","https://openalex.org/W2012778337","https://openalex.org/W2037616057","https://openalex.org/W2045574157","https://openalex.org/W2053289371","https://openalex.org/W2061385931","https://openalex.org/W2064248772","https://openalex.org/W2100890870","https://openalex.org/W2113112076","https://openalex.org/W2113137767","https://openalex.org/W2125540125","https://openalex.org/W2140288260","https://openalex.org/W2140760408","https://openalex.org/W2156844537","https://openalex.org/W2158955861","https://openalex.org/W2160467205","https://openalex.org/W2162476901","https://openalex.org/W2168185346","https://openalex.org/W2168402089","https://openalex.org/W2318182967","https://openalex.org/W2951942370","https://openalex.org/W2981264952","https://openalex.org/W4229800208","https://openalex.org/W4232580036"],"related_works":["https://openalex.org/W1976780206","https://openalex.org/W2040623373","https://openalex.org/W1539578262","https://openalex.org/W3114194026","https://openalex.org/W2059003835","https://openalex.org/W2124762070","https://openalex.org/W2152916165","https://openalex.org/W2150921709","https://openalex.org/W2064856154","https://openalex.org/W2061226083"],"abstract_inverted_index":{"Carbon":[0],"Nanotube":[1],"Field":[2,18],"Effect":[3,19],"Transistor":[4],"(CNTFET)--based":[5],"technologies":[6],"become":[7],"more":[8,10],"and":[9,45,78,98,160,202,209,216],"a":[11,26,33,38,122,132,141,165],"concurrent":[12],"alternative":[13],"to":[14,25,120,139,180,200,219,224],"Metal":[15],"Oxide":[16],"Semiconductor":[17],"Transistors":[20],"(MOSFET)":[21],"technologies.":[22,174],"In":[23,149],"contrast":[24],"MOSFET":[27],"technology,":[28],"the":[29,84,88,95,100,136,146,154,178,186],"active":[30,61,96,170],"layer":[31,97],"of":[32,51,59,87,94,126,135,185],"CNTFET":[34,102,157,204],"technology":[35,67,222],"is":[36,70],"not":[37,106],"regular":[39],"silicon":[40],"film":[41],"with":[42],"homogeneous":[43],"doping":[44],"rectangular":[46],"dimensions,":[47],"but":[48],"an":[49],"array":[50,79],"mostly":[52],"aligned":[53],"carbon":[54],"nanotubes":[55],"(CNTs).":[56],"The":[57,193],"quality":[58],"this":[60,150],"layer,":[62],"which":[63],"depends":[64],"on":[65,92],"various":[66],"process":[68,112,158,221],"parameters,":[69],"expressed":[71],"by":[72,163],"parameters":[73,82,108,223],"such":[74],"as":[75],"CNT":[76,110],"alignment":[77],"density.":[80],"These":[81],"affect":[83],"electrical":[85,137],"properties":[86],"logic":[89],"cells":[90],"placed":[91],"top":[93],"hence":[99],"overall":[101],"circuit":[103,161],"yield.":[104,228],"Although":[105],"all":[107],"in":[109,172],"fabrication":[111,159],"can":[113,196],"be":[114,198],"fully":[115],"controlled,":[116],"designers":[117,179],"still":[118],"need":[119],"assure":[121],"very":[123],"high":[124,133],"yield":[125,144],"their":[127],"cell":[128,188],"layouts,":[129],"that":[130],"is,":[131],"reproducibility":[134],"characteristics":[138],"achieve":[140,225],"reasonable":[142],"manufacturing":[143],"for":[145,169,206,211],"entire":[147],"chip.":[148],"work":[151],"we":[152],"close":[153],"gap":[155],"between":[156],"design":[162,214],"presenting":[164],"novel":[166],"accurate":[167],"model":[168,176,195],"layers":[171],"CNTFET--based":[173],"Our":[175],"enables":[177],"obtain":[181],"technology--dependent":[182],"driver":[183],"strength":[184],"custom":[187],"layouts":[189],"under":[190],"realistic":[191],"conditions.":[192],"new":[194],"also":[197],"used":[199],"extract":[201],"evaluate":[203],"Design":[205,210],"Manufacturing":[207],"(DfM)":[208],"Robustness":[212],"(DfR)":[213],"rules,":[215],"provide":[217],"feedback":[218],"adjust":[220],"desirable":[226],"functional":[227]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}