{"id":"https://openalex.org/W2144691765","doi":"https://doi.org/10.1145/2333660.2333709","title":"Design of low power 3D hybrid memory by non-volatile CBRAM-crossbar with block-level data-retention","display_name":"Design of low power 3D hybrid memory by non-volatile CBRAM-crossbar with block-level data-retention","publication_year":2012,"publication_date":"2012-07-30","ids":{"openalex":"https://openalex.org/W2144691765","doi":"https://doi.org/10.1145/2333660.2333709","mag":"2144691765"},"language":"en","primary_location":{"id":"doi:10.1145/2333660.2333709","is_oa":false,"landing_page_url":"https://doi.org/10.1145/2333660.2333709","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the 2012 ACM/IEEE international symposium on Low power electronics and design","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100370106","display_name":"Yuhao Wang","orcid":"https://orcid.org/0000-0002-9724-9667"},"institutions":[{"id":"https://openalex.org/I172675005","display_name":"Nanyang Technological University","ror":"https://ror.org/02e7b5302","country_code":"SG","type":"education","lineage":["https://openalex.org/I172675005"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Yuhao Wang","raw_affiliation_strings":["Nanyang Technological University, Singapore, Singapore","Nanyang Technological University, Singapore, SINGAPORE#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Nanyang Technological University, Singapore, Singapore","institution_ids":["https://openalex.org/I172675005"]},{"raw_affiliation_string":"Nanyang Technological University, Singapore, SINGAPORE#TAB#","institution_ids":["https://openalex.org/I172675005"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100763540","display_name":"Chun Zhang","orcid":"https://orcid.org/0000-0002-1581-5806"},"institutions":[{"id":"https://openalex.org/I172675005","display_name":"Nanyang Technological University","ror":"https://ror.org/02e7b5302","country_code":"SG","type":"education","lineage":["https://openalex.org/I172675005"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Chun Zhang","raw_affiliation_strings":["Nanyang Technological University, Singapore, Singapore","Nanyang Technological University, Singapore, SINGAPORE#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Nanyang Technological University, Singapore, Singapore","institution_ids":["https://openalex.org/I172675005"]},{"raw_affiliation_string":"Nanyang Technological University, Singapore, SINGAPORE#TAB#","institution_ids":["https://openalex.org/I172675005"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100432170","display_name":"Hao Yu","orcid":"https://orcid.org/0000-0001-8747-3203"},"institutions":[{"id":"https://openalex.org/I172675005","display_name":"Nanyang Technological University","ror":"https://ror.org/02e7b5302","country_code":"SG","type":"education","lineage":["https://openalex.org/I172675005"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Hao Yu","raw_affiliation_strings":["Nanyang Technological University, Singapore, Singapore","Nanyang Technological University, Singapore, SINGAPORE#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Nanyang Technological University, Singapore, Singapore","institution_ids":["https://openalex.org/I172675005"]},{"raw_affiliation_string":"Nanyang Technological University, Singapore, SINGAPORE#TAB#","institution_ids":["https://openalex.org/I172675005"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5061515087","display_name":"Wei Zhang","orcid":"https://orcid.org/0000-0002-7622-6714"},"institutions":[{"id":"https://openalex.org/I172675005","display_name":"Nanyang Technological University","ror":"https://ror.org/02e7b5302","country_code":"SG","type":"education","lineage":["https://openalex.org/I172675005"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Wei Zhang","raw_affiliation_strings":["Nanyang Technological University, Singapore, Singapore","Nanyang Technological University, Singapore, SINGAPORE#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Nanyang Technological University, Singapore, Singapore","institution_ids":["https://openalex.org/I172675005"]},{"raw_affiliation_string":"Nanyang Technological University, Singapore, SINGAPORE#TAB#","institution_ids":["https://openalex.org/I172675005"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":3.7476,"has_fulltext":false,"cited_by_count":20,"citation_normalized_percentile":{"value":0.93746859,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":90,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"197","last_page":"202"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11315","display_name":"Phase-change materials and chalcogenides","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/crossbar-switch","display_name":"Crossbar switch","score":0.8822034597396851},{"id":"https://openalex.org/keywords/block","display_name":"Block (permutation group theory)","score":0.663894772529602},{"id":"https://openalex.org/keywords/non-volatile-memory","display_name":"Non-volatile memory","score":0.6296834349632263},{"id":"https://openalex.org/keywords/data-retention","display_name":"Data retention","score":0.6188665628433228},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.5283535122871399},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5167180895805359},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.36475569009780884},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.2687125504016876},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.26847779750823975},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.2642187476158142},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.19191181659698486},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.14525964856147766},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.13403743505477905}],"concepts":[{"id":"https://openalex.org/C29984679","wikidata":"https://www.wikidata.org/wiki/Q1929149","display_name":"Crossbar switch","level":2,"score":0.8822034597396851},{"id":"https://openalex.org/C2777210771","wikidata":"https://www.wikidata.org/wiki/Q4927124","display_name":"Block (permutation group theory)","level":2,"score":0.663894772529602},{"id":"https://openalex.org/C177950962","wikidata":"https://www.wikidata.org/wiki/Q10997658","display_name":"Non-volatile memory","level":2,"score":0.6296834349632263},{"id":"https://openalex.org/C2780866740","wikidata":"https://www.wikidata.org/wiki/Q5227345","display_name":"Data retention","level":2,"score":0.6188665628433228},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.5283535122871399},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5167180895805359},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.36475569009780884},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.2687125504016876},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.26847779750823975},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.2642187476158142},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.19191181659698486},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.14525964856147766},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.13403743505477905},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.0},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0}],"mesh":[],"locations_count":4,"locations":[{"id":"doi:10.1145/2333660.2333709","is_oa":false,"landing_page_url":"https://doi.org/10.1145/2333660.2333709","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the 2012 ACM/IEEE international symposium on Low power electronics and design","raw_type":"proceedings-article"},{"id":"pmh:oai:dr.ntu.edu.sg:10356/98317","is_oa":false,"landing_page_url":"http://hdl.handle.net/10220/12366","pdf_url":null,"source":{"id":"https://openalex.org/S4306402609","display_name":"DR-NTU (Nanyang Technological University)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I172675005","host_organization_name":"Nanyang Technological University","host_organization_lineage":["https://openalex.org/I172675005"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"Conference Paper"},{"id":"pmh:oai:repository.hkust.edu.hk:1783.1-65488","is_oa":false,"landing_page_url":"http://repository.hkust.edu.hk/ir/Record/1783.1-65488","pdf_url":null,"source":{"id":"https://openalex.org/S4306401796","display_name":"Rare & Special e-Zone (The Hong Kong University of Science and Technology)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I200769079","host_organization_name":"Hong Kong University of Science and Technology","host_organization_lineage":["https://openalex.org/I200769079"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"Conference paper"},{"id":"pmh:oai:repository.ust.hk:1783.1-65488","is_oa":false,"landing_page_url":"http://www.scopus.com/record/display.url?eid=2-s2.0-84865559566&origin=inward","pdf_url":null,"source":{"id":"https://openalex.org/S4306401796","display_name":"Rare & Special e-Zone (The Hong Kong University of Science and Technology)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I200769079","host_organization_name":"Hong Kong University of Science and Technology","host_organization_lineage":["https://openalex.org/I200769079"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"Conference paper"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/10","display_name":"Reduced inequalities","score":0.6499999761581421}],"awards":[],"funders":[{"id":"https://openalex.org/F4320321026","display_name":"Ministry of Earth Sciences","ror":"https://ror.org/013cf5k59"},{"id":"https://openalex.org/F4320322724","display_name":"Ministry of Education, India","ror":"https://ror.org/048xjjh50"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":23,"referenced_works":["https://openalex.org/W1492601037","https://openalex.org/W1555915743","https://openalex.org/W1979979239","https://openalex.org/W2022151624","https://openalex.org/W2028802049","https://openalex.org/W2035257891","https://openalex.org/W2064977311","https://openalex.org/W2068407451","https://openalex.org/W2096800126","https://openalex.org/W2103868490","https://openalex.org/W2108270156","https://openalex.org/W2109458212","https://openalex.org/W2111694462","https://openalex.org/W2121378649","https://openalex.org/W2122435992","https://openalex.org/W2124210802","https://openalex.org/W2131413854","https://openalex.org/W2141483693","https://openalex.org/W2154474882","https://openalex.org/W2166812838","https://openalex.org/W2168972302","https://openalex.org/W2323986115","https://openalex.org/W3139689176"],"related_works":["https://openalex.org/W2110321764","https://openalex.org/W2036350002","https://openalex.org/W53242602","https://openalex.org/W2104937488","https://openalex.org/W2106449802","https://openalex.org/W2168060209","https://openalex.org/W2122491682","https://openalex.org/W2474047183","https://openalex.org/W1602728803","https://openalex.org/W1967645702"],"abstract_inverted_index":{"As":[0],"one":[1,59],"of":[2,19,56,61],"the":[3,99,130,146],"newly":[4],"introduced":[5],"resistive":[6],"random":[7,21,104],"access":[8,22,105],"memory":[9,23,27,34,101,106,113],"(ReRAM)":[10],"devices,":[11],"this":[12],"paper":[13],"has":[14],"shown":[15],"an":[16],"in-depth":[17],"study":[18],"conductive-bridging":[20],"(CBRAM)":[24],"for":[25,65,124],"non-volatile":[26],"(NVM)":[28],"computing.":[29],"Firstly,":[30],"a":[31,52,80],"CBRAM-crossbar":[32,62],"based":[33],"is":[35,45,63,84],"evaluated":[36],"with":[37,51],"accurate":[38],"physical-level":[39],"model":[40],"and":[41,119,141],"circuit-level":[42],"characterization.":[43],"It":[44],"then":[46],"deployed":[47],"as":[48,108],"NVM":[49],"component":[50],"3D":[53],"hybrid":[54,100,112],"integration":[55],"SRAM/DRAM,":[57],"where":[58],"layer":[60],"designed":[64,85],"data-retention":[66,82],"under":[67,145],"power":[68,73,123,144],"gating":[69],"to":[70,86,94,98,129],"reduce":[71],"leakage":[72],"from":[74,92],"SRAM/DRAM":[75,93],"at":[76],"other":[77],"layers.":[78],"Moreover,":[79],"block-level":[81],"scheme":[83],"only":[87],"write":[88],"back":[89],"dirty":[90],"data":[91,148],"CBRAM-crossbar.":[95],"When":[96,127],"compared":[97,128],"using":[102],"phase-change":[103],"(PCRAM)":[107],"data-retention,":[109,133],"our":[110,134],"CBRAM-based":[111],"achieves":[114,137],"16x":[115],"faster":[116],"migration":[117,122,149],"time":[118],"4x":[120],"less":[121],"hibernating":[125],"transition.":[126],"FeRAM-based":[131],"bit-wise":[132],"approach":[135],"also":[136],"17x":[138],"smaller":[139,143],"area":[140],"8x":[142],"same":[147],"speed.":[150]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2017,"cited_by_count":2},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":3},{"year":2014,"cited_by_count":5},{"year":2013,"cited_by_count":6},{"year":2012,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2016-06-24T00:00:00"}