{"id":"https://openalex.org/W2106201725","doi":"https://doi.org/10.1145/2206781.2206836","title":"Limits of writing multivalued resistances in passive nanoelectronic crossbars used in neuromorphic circuits","display_name":"Limits of writing multivalued resistances in passive nanoelectronic crossbars used in neuromorphic circuits","publication_year":2012,"publication_date":"2012-05-03","ids":{"openalex":"https://openalex.org/W2106201725","doi":"https://doi.org/10.1145/2206781.2206836","mag":"2106201725"},"language":"en","primary_location":{"id":"doi:10.1145/2206781.2206836","is_oa":false,"landing_page_url":"https://doi.org/10.1145/2206781.2206836","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the great lakes symposium on VLSI","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5033971238","display_name":"Arne Heittmann","orcid":null},"institutions":[{"id":"https://openalex.org/I887968799","display_name":"RWTH Aachen University","ror":"https://ror.org/04xfq0f34","country_code":"DE","type":"education","lineage":["https://openalex.org/I887968799"]}],"countries":["DE"],"is_corresponding":true,"raw_author_name":"Arne Heittmann","raw_affiliation_strings":["RWTH Aachen University, Aachen, Germany","RWTH-Aachen University, Aachen, Germany"],"affiliations":[{"raw_affiliation_string":"RWTH Aachen University, Aachen, Germany","institution_ids":["https://openalex.org/I887968799"]},{"raw_affiliation_string":"RWTH-Aachen University, Aachen, Germany","institution_ids":["https://openalex.org/I887968799"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5103870395","display_name":"Tobias G. Noll","orcid":null},"institutions":[{"id":"https://openalex.org/I887968799","display_name":"RWTH Aachen University","ror":"https://ror.org/04xfq0f34","country_code":"DE","type":"education","lineage":["https://openalex.org/I887968799"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Tobias G. Noll","raw_affiliation_strings":["RWTH Aachen University, Aachen, Germany","RWTH-Aachen University, Aachen, Germany"],"affiliations":[{"raw_affiliation_string":"RWTH Aachen University, Aachen, Germany","institution_ids":["https://openalex.org/I887968799"]},{"raw_affiliation_string":"RWTH-Aachen University, Aachen, Germany","institution_ids":["https://openalex.org/I887968799"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5033971238"],"corresponding_institution_ids":["https://openalex.org/I887968799"],"apc_list":null,"apc_paid":null,"fwci":2.7388,"has_fulltext":false,"cited_by_count":21,"citation_normalized_percentile":{"value":0.91055899,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"227","last_page":"232"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11601","display_name":"Neuroscience and Neural Engineering","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/2804","display_name":"Cellular and Molecular Neuroscience"},"field":{"id":"https://openalex.org/fields/28","display_name":"Neuroscience"},"domain":{"id":"https://openalex.org/domains/1","display_name":"Life Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/crossbar-switch","display_name":"Crossbar switch","score":0.8214982151985168},{"id":"https://openalex.org/keywords/neuromorphic-engineering","display_name":"Neuromorphic engineering","score":0.8068290948867798},{"id":"https://openalex.org/keywords/resistive-touchscreen","display_name":"Resistive touchscreen","score":0.7081353068351746},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.5920747518539429},{"id":"https://openalex.org/keywords/subthreshold-conduction","display_name":"Subthreshold conduction","score":0.572169840335846},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.565310001373291},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5567719340324402},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5329986810684204},{"id":"https://openalex.org/keywords/feature","display_name":"Feature (linguistics)","score":0.4485512971878052},{"id":"https://openalex.org/keywords/mode","display_name":"Mode (computer interface)","score":0.4155062437057495},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.38941138982772827},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.35579174757003784},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.23347434401512146},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.22252357006072998},{"id":"https://openalex.org/keywords/artificial-intelligence","display_name":"Artificial intelligence","score":0.1449393630027771},{"id":"https://openalex.org/keywords/artificial-neural-network","display_name":"Artificial neural network","score":0.12141680717468262}],"concepts":[{"id":"https://openalex.org/C29984679","wikidata":"https://www.wikidata.org/wiki/Q1929149","display_name":"Crossbar switch","level":2,"score":0.8214982151985168},{"id":"https://openalex.org/C151927369","wikidata":"https://www.wikidata.org/wiki/Q1981312","display_name":"Neuromorphic engineering","level":3,"score":0.8068290948867798},{"id":"https://openalex.org/C6899612","wikidata":"https://www.wikidata.org/wiki/Q852911","display_name":"Resistive touchscreen","level":2,"score":0.7081353068351746},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5920747518539429},{"id":"https://openalex.org/C156465305","wikidata":"https://www.wikidata.org/wiki/Q1658601","display_name":"Subthreshold conduction","level":4,"score":0.572169840335846},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.565310001373291},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5567719340324402},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5329986810684204},{"id":"https://openalex.org/C2776401178","wikidata":"https://www.wikidata.org/wiki/Q12050496","display_name":"Feature (linguistics)","level":2,"score":0.4485512971878052},{"id":"https://openalex.org/C48677424","wikidata":"https://www.wikidata.org/wiki/Q6888088","display_name":"Mode (computer interface)","level":2,"score":0.4155062437057495},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.38941138982772827},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.35579174757003784},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.23347434401512146},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.22252357006072998},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.1449393630027771},{"id":"https://openalex.org/C50644808","wikidata":"https://www.wikidata.org/wiki/Q192776","display_name":"Artificial neural network","level":2,"score":0.12141680717468262},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0},{"id":"https://openalex.org/C41895202","wikidata":"https://www.wikidata.org/wiki/Q8162","display_name":"Linguistics","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1145/2206781.2206836","is_oa":false,"landing_page_url":"https://doi.org/10.1145/2206781.2206836","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the great lakes symposium on VLSI","raw_type":"proceedings-article"},{"id":"pmh:oai:publications.rwth-aachen.de:207578","is_oa":false,"landing_page_url":"https://publications.rwth-aachen.de/search?p=id:%22RWTH-CONV-201006%22","pdf_url":null,"source":{"id":"https://openalex.org/S4306401033","display_name":"RWTH Publications (RWTH Aachen)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I887968799","host_organization_name":"RWTH Aachen University","host_organization_lineage":["https://openalex.org/I887968799"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"GLSVLSI'12 : proceedings of the ACM Conference on Great Lakes Symposium on VLSI 2012; May 3 - 4, Salt Lake City, UT, USA<br/>ACM Conference on Great Lakes Symposium on VLSI 2012, GLSVLSI'12, Salt Lake City, USA, 2012-05-03 - 2012-05-04","raw_type":"info:eu-repo/semantics/publishedVersion"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.5299999713897705,"id":"https://metadata.un.org/sdg/4","display_name":"Quality Education"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":24,"referenced_works":["https://openalex.org/W568905349","https://openalex.org/W2007898123","https://openalex.org/W2009604146","https://openalex.org/W2016922062","https://openalex.org/W2028673792","https://openalex.org/W2031039947","https://openalex.org/W2034770274","https://openalex.org/W2062244941","https://openalex.org/W2072287795","https://openalex.org/W2080659521","https://openalex.org/W2091777687","https://openalex.org/W2108340689","https://openalex.org/W2112181056","https://openalex.org/W2118968555","https://openalex.org/W2120557145","https://openalex.org/W2121917196","https://openalex.org/W2122352981","https://openalex.org/W2142704184","https://openalex.org/W2157729981","https://openalex.org/W2157926305","https://openalex.org/W2166432809","https://openalex.org/W3099743262","https://openalex.org/W4232501994","https://openalex.org/W6681120143"],"related_works":["https://openalex.org/W2986579802","https://openalex.org/W3108691306","https://openalex.org/W4389237622","https://openalex.org/W2166309310","https://openalex.org/W4385753159","https://openalex.org/W4387251107","https://openalex.org/W2612269878","https://openalex.org/W2806295079","https://openalex.org/W2588565308","https://openalex.org/W3100668214"],"abstract_inverted_index":{"In":[0],"this":[1],"paper,":[2],"limits":[3,72],"of":[4,75,85],"writing":[5],"multivalued":[6],"resistances":[7],"in":[8,49],"passive":[9,76],"nanoelectronic":[10],"crossbars":[11],"are":[12,16],"examined.":[13],"The":[14,33,52],"results":[15,53],"based":[17,27,42],"on":[18,28,43],"circuit":[19],"simulation":[20],"including":[21],"device":[22],"models":[23],"for":[24],"resistive":[25,86],"switches":[26],"the":[29,69,73],"electrochemical":[30],"metallization":[31],"effect.":[32],"write":[34],"operation":[35],"is":[36],"performed":[37],"using":[38],"a":[39],"current":[40],"mirror":[41],"40nm":[44],"CMOS":[45],"technology":[46],"which":[47,71],"operates":[48],"subthreshold":[50],"mode.":[51],"show":[54],"that":[55,80],"only":[56],"sparsely":[57],"coded":[58],"pattern":[59],"with":[60],"low":[61],"mutual":[62],"overlap":[63],"can":[64],"be":[65],"robustly":[66],"brought":[67],"into":[68],"matrix":[70],"use":[74],"crossbar":[77],"to":[78],"applications":[79],"feature":[81],"particular":[82],"spatial":[83],"distributions":[84],"weights.":[87]},"counts_by_year":[{"year":2020,"cited_by_count":2},{"year":2018,"cited_by_count":3},{"year":2017,"cited_by_count":3},{"year":2016,"cited_by_count":2},{"year":2015,"cited_by_count":2},{"year":2014,"cited_by_count":5},{"year":2013,"cited_by_count":1},{"year":2012,"cited_by_count":3}],"updated_date":"2026-04-04T16:13:02.066488","created_date":"2025-10-10T00:00:00"}