{"id":"https://openalex.org/W2167453825","doi":"https://doi.org/10.1145/2206781.2206811","title":"Self adaptive body biasing scheme for leakage power reduction in nanoscale CMOS circuit","display_name":"Self adaptive body biasing scheme for leakage power reduction in nanoscale CMOS circuit","publication_year":2012,"publication_date":"2012-05-03","ids":{"openalex":"https://openalex.org/W2167453825","doi":"https://doi.org/10.1145/2206781.2206811","mag":"2167453825"},"language":"en","primary_location":{"id":"doi:10.1145/2206781.2206811","is_oa":false,"landing_page_url":"https://doi.org/10.1145/2206781.2206811","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the great lakes symposium on VLSI","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100459975","display_name":"Jing Yang","orcid":"https://orcid.org/0000-0002-1044-6458"},"institutions":[{"id":"https://openalex.org/I12912129","display_name":"Northeastern University","ror":"https://ror.org/04t5xt781","country_code":"US","type":"education","lineage":["https://openalex.org/I12912129"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Jing Yang","raw_affiliation_strings":["Northeastern University, Boston, MA, USA"],"affiliations":[{"raw_affiliation_string":"Northeastern University, Boston, MA, USA","institution_ids":["https://openalex.org/I12912129"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5011076820","display_name":"Yong-bin Kim","orcid":null},"institutions":[{"id":"https://openalex.org/I12912129","display_name":"Northeastern University","ror":"https://ror.org/04t5xt781","country_code":"US","type":"education","lineage":["https://openalex.org/I12912129"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Yong-bin Kim","raw_affiliation_strings":["Northeastern University, Boston, MA, USA"],"affiliations":[{"raw_affiliation_string":"Northeastern University, Boston, MA, USA","institution_ids":["https://openalex.org/I12912129"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5100459975"],"corresponding_institution_ids":["https://openalex.org/I12912129"],"apc_list":null,"apc_paid":null,"fwci":0.7365,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.75932131,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"111","last_page":"116"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T13182","display_name":"Quantum-Dot Cellular Automata","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/1703","display_name":"Computational Theory and Mathematics"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.8371239900588989},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.7993950843811035},{"id":"https://openalex.org/keywords/subthreshold-conduction","display_name":"Subthreshold conduction","score":0.7751778364181519},{"id":"https://openalex.org/keywords/standby-power","display_name":"Standby power","score":0.5698498487472534},{"id":"https://openalex.org/keywords/biasing","display_name":"Biasing","score":0.5543901324272156},{"id":"https://openalex.org/keywords/leakage-power","display_name":"Leakage power","score":0.5473657846450806},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5259525775909424},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5081110000610352},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.47921305894851685},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.44154438376426697},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.3731849193572998},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.3295409083366394},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.2713088393211365}],"concepts":[{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.8371239900588989},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.7993950843811035},{"id":"https://openalex.org/C156465305","wikidata":"https://www.wikidata.org/wiki/Q1658601","display_name":"Subthreshold conduction","level":4,"score":0.7751778364181519},{"id":"https://openalex.org/C7140552","wikidata":"https://www.wikidata.org/wiki/Q1366402","display_name":"Standby power","level":3,"score":0.5698498487472534},{"id":"https://openalex.org/C20254490","wikidata":"https://www.wikidata.org/wiki/Q719550","display_name":"Biasing","level":3,"score":0.5543901324272156},{"id":"https://openalex.org/C2987719587","wikidata":"https://www.wikidata.org/wiki/Q1811428","display_name":"Leakage power","level":4,"score":0.5473657846450806},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5259525775909424},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5081110000610352},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.47921305894851685},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.44154438376426697},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3731849193572998},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.3295409083366394},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.2713088393211365},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1145/2206781.2206811","is_oa":false,"landing_page_url":"https://doi.org/10.1145/2206781.2206811","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the great lakes symposium on VLSI","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.8700000047683716,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":11,"referenced_works":["https://openalex.org/W2048874455","https://openalex.org/W2056796532","https://openalex.org/W2074190208","https://openalex.org/W2092886195","https://openalex.org/W2097321959","https://openalex.org/W2098194061","https://openalex.org/W2108049334","https://openalex.org/W2131862714","https://openalex.org/W2150526221","https://openalex.org/W2158995415","https://openalex.org/W2170444169"],"related_works":["https://openalex.org/W2081957907","https://openalex.org/W2924345281","https://openalex.org/W1975421009","https://openalex.org/W2099115487","https://openalex.org/W2282857298","https://openalex.org/W2900067469","https://openalex.org/W2802274608","https://openalex.org/W2130342263","https://openalex.org/W1949737515","https://openalex.org/W2039755656"],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"techniques":[3],"to":[4,13,107],"determine":[5],"the":[6,28,92,96,99,109,119,123],"optimal":[7,82],"reverse":[8,30],"body":[9,31],"bias":[10,32],"(RBB)":[11],"voltage":[12,33,76],"minimize":[14],"leakage":[15,36,42,47,52,111,121],"currents":[16,53],"in":[17,55,91],"modern":[18],"nanoscale":[19],"CMOS":[20,69],"technology.":[21],"The":[22,58,81],"proposed":[23,59,124],"self-adaptive":[24],"RBB":[25,83],"system":[26],"finds":[27],"optimum":[29],"for":[34],"minimal":[35],"power":[37],"adaptively":[38],"by":[39],"comparing":[40],"subthreshold":[41],"current":[43,112],"(ISUBTH),":[44],"gate":[45],"tunneling":[46,51],"(IGATE),":[48],"and":[49,64,98],"band-to-band":[50],"(IBTBT)":[54],"standby":[56],"mode.":[57],"circuit":[60,125],"has":[61],"been":[62],"designed":[63],"tested":[65],"using":[66,122],"65nm":[67],"bulk":[68],"technology":[70],"at":[71,86],"25\u00baC":[72],"under":[73],"a":[74],"supply":[75],"of":[77,95,118],"less":[78],"than":[79],"1V.":[80],"was":[84],"achieved":[85],"-0.372V":[87],"with":[88],"1.2%":[89],"error":[90],"test":[93],"case":[94],"paper,":[97],"simulation":[100],"result":[101],"shows":[102],"that":[103],"it":[104],"is":[105],"possible":[106],"reduce":[108],"total":[110,120],"significantly":[113],"as":[114,116],"much":[115],"86%":[117],"techniques.":[126]},"counts_by_year":[{"year":2019,"cited_by_count":1},{"year":2014,"cited_by_count":3}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}