{"id":"https://openalex.org/W2090982072","doi":"https://doi.org/10.1145/1980022.1980268","title":"Effect of high K dielectric on mobility of graphene FET","display_name":"Effect of high K dielectric on mobility of graphene FET","publication_year":2011,"publication_date":"2011-01-01","ids":{"openalex":"https://openalex.org/W2090982072","doi":"https://doi.org/10.1145/1980022.1980268","mag":"2090982072"},"language":"en","primary_location":{"id":"doi:10.1145/1980022.1980268","is_oa":false,"landing_page_url":"https://doi.org/10.1145/1980022.1980268","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the International Conference & Workshop on Emerging Trends in Technology - ICWET '11","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5058666762","display_name":"Vikrant Sahu","orcid":"https://orcid.org/0000-0003-3066-2323"},"institutions":[],"countries":[],"is_corresponding":true,"raw_author_name":"V. B. Sahu","raw_affiliation_strings":["ENTC, College of Engg, Pune"],"affiliations":[{"raw_affiliation_string":"ENTC, College of Engg, Pune","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5067350252","display_name":"P. G. Pawar","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"P. G. Pawar","raw_affiliation_strings":["ENTC, College of Engg, Pune"],"affiliations":[{"raw_affiliation_string":"ENTC, College of Engg, Pune","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5045560035","display_name":"Ashwini S. Gajarushi","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"A. Gajarushi","raw_affiliation_strings":["ENTC, College of Engg, Pune"],"affiliations":[{"raw_affiliation_string":"ENTC, College of Engg, Pune","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5058666762"],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.13341394,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"1148","last_page":"1148"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10083","display_name":"Graphene research and applications","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10083","display_name":"Graphene research and applications","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9940000176429749,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9866999983787537,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/graphene","display_name":"Graphene","score":0.9184039235115051},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.7707517147064209},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7607546448707581},{"id":"https://openalex.org/keywords/gate-dielectric","display_name":"Gate dielectric","score":0.6371815800666809},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6055097579956055},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5977041721343994},{"id":"https://openalex.org/keywords/electron-mobility","display_name":"Electron mobility","score":0.5434485077857971},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.5033494830131531},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.49612411856651306},{"id":"https://openalex.org/keywords/high-\u03ba-dielectric","display_name":"High-\u03ba dielectric","score":0.47722700238227844},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.3309391736984253},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2542402148246765},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.10974863171577454},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.05862545967102051}],"concepts":[{"id":"https://openalex.org/C30080830","wikidata":"https://www.wikidata.org/wiki/Q169917","display_name":"Graphene","level":2,"score":0.9184039235115051},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.7707517147064209},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7607546448707581},{"id":"https://openalex.org/C166972891","wikidata":"https://www.wikidata.org/wiki/Q5527011","display_name":"Gate dielectric","level":4,"score":0.6371815800666809},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6055097579956055},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5977041721343994},{"id":"https://openalex.org/C106782819","wikidata":"https://www.wikidata.org/wiki/Q6501076","display_name":"Electron mobility","level":2,"score":0.5434485077857971},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.5033494830131531},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.49612411856651306},{"id":"https://openalex.org/C16317505","wikidata":"https://www.wikidata.org/wiki/Q132013","display_name":"High-\u03ba dielectric","level":3,"score":0.47722700238227844},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.3309391736984253},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2542402148246765},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.10974863171577454},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.05862545967102051}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1145/1980022.1980268","is_oa":false,"landing_page_url":"https://doi.org/10.1145/1980022.1980268","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the International Conference & Workshop on Emerging Trends in Technology - ICWET '11","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.44999998807907104,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":2,"referenced_works":["https://openalex.org/W2093010835","https://openalex.org/W4285719527"],"related_works":["https://openalex.org/W2119785263","https://openalex.org/W2485423730","https://openalex.org/W2051365563","https://openalex.org/W2325624096","https://openalex.org/W3204399487","https://openalex.org/W2550815500","https://openalex.org/W2048139697","https://openalex.org/W3211886203","https://openalex.org/W1972909779","https://openalex.org/W1963703610"],"abstract_inverted_index":{"In":[0,24],"order":[1],"to":[2,22],"overcome":[3],"the":[4,43],"limitation":[5],"of":[6,55],"Moore's":[7],"law":[8],"in":[9,33],"recent":[10],"years":[11],"much":[12],"attention":[13],"has":[14],"been":[15],"focused":[16],"on":[17],"graphene":[18,34,48],"as":[19,42],"an":[20],"alternative":[21],"silicon.":[23],"this":[25],"paper":[26],"different":[27],"gate":[28,45],"dielectric":[29,46],"materials":[30],"for":[31,47],"use":[32],"transistors":[35],"is":[36,40],"examined.":[37],"Evaporated":[38],"HfO2":[39],"found":[41],"effective":[44],"field":[49],"effect":[50],"transistor":[51],"which":[52],"improves":[53],"mobility":[54],"device.":[56]},"counts_by_year":[{"year":2022,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}