{"id":"https://openalex.org/W2082573032","doi":"https://doi.org/10.1145/1973009.1973034","title":"A 7T SRAM bit-cell for low-power embedded memories","display_name":"A 7T SRAM bit-cell for low-power embedded memories","publication_year":2011,"publication_date":"2011-05-02","ids":{"openalex":"https://openalex.org/W2082573032","doi":"https://doi.org/10.1145/1973009.1973034","mag":"2082573032"},"language":"en","primary_location":{"id":"doi:10.1145/1973009.1973034","is_oa":false,"landing_page_url":"https://doi.org/10.1145/1973009.1973034","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the 21st edition of the great lakes symposium on Great lakes symposium on VLSI","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5051704528","display_name":"Wasim Hussain","orcid":"https://orcid.org/0000-0003-0812-6276"},"institutions":[{"id":"https://openalex.org/I60158472","display_name":"Concordia University","ror":"https://ror.org/0420zvk78","country_code":"CA","type":"education","lineage":["https://openalex.org/I60158472"]}],"countries":["CA"],"is_corresponding":false,"raw_author_name":"Wasim Hussain","raw_affiliation_strings":["Concordia University, Montreal, PQ, Canada","Concordia University, Montreal, PQ, Canada#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Concordia University, Montreal, PQ, Canada","institution_ids":["https://openalex.org/I60158472"]},{"raw_affiliation_string":"Concordia University, Montreal, PQ, Canada#TAB#","institution_ids":["https://openalex.org/I60158472"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5007313602","display_name":"Shah M. Jahinuzzaman","orcid":null},"institutions":[{"id":"https://openalex.org/I60158472","display_name":"Concordia University","ror":"https://ror.org/0420zvk78","country_code":"CA","type":"education","lineage":["https://openalex.org/I60158472"]}],"countries":["CA"],"is_corresponding":false,"raw_author_name":"Shah M. Jahinuzzaman","raw_affiliation_strings":["Concordia University, Montreal, PQ, Canada","Concordia University, Montreal, PQ, Canada#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Concordia University, Montreal, PQ, Canada","institution_ids":["https://openalex.org/I60158472"]},{"raw_affiliation_string":"Concordia University, Montreal, PQ, Canada#TAB#","institution_ids":["https://openalex.org/I60158472"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.2703,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.62784712,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":95},"biblio":{"volume":null,"issue":null,"first_page":"121","last_page":"126"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10018","display_name":"Advancements in Battery Materials","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.8929721713066101},{"id":"https://openalex.org/keywords/soft-error","display_name":"Soft error","score":0.603013277053833},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5747238993644714},{"id":"https://openalex.org/keywords/overhead","display_name":"Overhead (engineering)","score":0.5670274496078491},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.5593074560165405},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5435523986816406},{"id":"https://openalex.org/keywords/memory-cell","display_name":"Memory cell","score":0.522864580154419},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.519015908241272},{"id":"https://openalex.org/keywords/noise-margin","display_name":"Noise margin","score":0.4747783839702606},{"id":"https://openalex.org/keywords/low-power-electronics","display_name":"Low-power electronics","score":0.4653666019439697},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.46322229504585266},{"id":"https://openalex.org/keywords/node","display_name":"Node (physics)","score":0.45890894532203674},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.42642635107040405},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3942214846611023},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.3258219361305237},{"id":"https://openalex.org/keywords/power-consumption","display_name":"Power consumption","score":0.27637210488319397},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.19937238097190857},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.11598604917526245}],"concepts":[{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.8929721713066101},{"id":"https://openalex.org/C154474529","wikidata":"https://www.wikidata.org/wiki/Q1658917","display_name":"Soft error","level":2,"score":0.603013277053833},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5747238993644714},{"id":"https://openalex.org/C2779960059","wikidata":"https://www.wikidata.org/wiki/Q7113681","display_name":"Overhead (engineering)","level":2,"score":0.5670274496078491},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5593074560165405},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5435523986816406},{"id":"https://openalex.org/C2776638159","wikidata":"https://www.wikidata.org/wiki/Q18343761","display_name":"Memory cell","level":4,"score":0.522864580154419},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.519015908241272},{"id":"https://openalex.org/C179499742","wikidata":"https://www.wikidata.org/wiki/Q1324892","display_name":"Noise margin","level":4,"score":0.4747783839702606},{"id":"https://openalex.org/C117551214","wikidata":"https://www.wikidata.org/wiki/Q6692774","display_name":"Low-power electronics","level":4,"score":0.4653666019439697},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.46322229504585266},{"id":"https://openalex.org/C62611344","wikidata":"https://www.wikidata.org/wiki/Q1062658","display_name":"Node (physics)","level":2,"score":0.45890894532203674},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.42642635107040405},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3942214846611023},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.3258219361305237},{"id":"https://openalex.org/C2984118289","wikidata":"https://www.wikidata.org/wiki/Q29954","display_name":"Power consumption","level":3,"score":0.27637210488319397},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.19937238097190857},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.11598604917526245},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C66938386","wikidata":"https://www.wikidata.org/wiki/Q633538","display_name":"Structural engineering","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1145/1973009.1973034","is_oa":false,"landing_page_url":"https://doi.org/10.1145/1973009.1973034","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the 21st edition of the great lakes symposium on Great lakes symposium on VLSI","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.7099999785423279,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":12,"referenced_works":["https://openalex.org/W2002612140","https://openalex.org/W2105175332","https://openalex.org/W2123920772","https://openalex.org/W2132357267","https://openalex.org/W2134381039","https://openalex.org/W2142358791","https://openalex.org/W2142748076","https://openalex.org/W2151466808","https://openalex.org/W2152652532","https://openalex.org/W2158267481","https://openalex.org/W3148792909","https://openalex.org/W4235803197"],"related_works":["https://openalex.org/W4290647047","https://openalex.org/W1500230652","https://openalex.org/W2363504003","https://openalex.org/W2066033226","https://openalex.org/W2548582980","https://openalex.org/W2620706469","https://openalex.org/W2052914698","https://openalex.org/W2088929465","https://openalex.org/W2612883256","https://openalex.org/W4386933833"],"abstract_inverted_index":{"With":[0],"CMOS":[1,143],"technology":[2],"scaling,":[3],"data":[4,95],"stability":[5,96],"and":[6,54,97,103,137,157],"yield":[7,98],"have":[8],"become":[9],"key":[10],"concerns":[11],"of":[12,113,125,150,169,171],"low":[13],"power":[14,61,119,128],"embedded":[15],"memories,":[16],"which":[17],"are":[18],"realized":[19],"using":[20,139],"the":[21,45,50,56,59,73,79,86,90,114,117,126,131,151,159,172],"static":[22,69],"random":[23],"access":[24],"memory":[25],"(SRAM).":[26],"In":[27,107],"this":[28],"paper,":[29],"we":[30],"propose":[31],"a":[32,66,109,140],"seven":[33],"transistor":[34],"(7T)":[35],"SRAM":[36,76,187],"bit-cell":[37],"to":[38,120],"address":[39],"these":[40],"concerns.":[41],"The":[42,63,145],"cell":[43,60,64,77,92,115,133,153,182],"decouples":[44],"read":[46,87],"bit":[47,52],"line":[48],"from":[49],"write":[51,111,118,127],"lines":[53],"uses":[55],"latter":[57],"as":[58,78,180],"lines.":[62],"exhibits":[65],"much":[67],"higher":[68,94],"noise":[70],"margin":[71],"than":[72,122,167],"conventional":[74],"6T":[75,132,173,181],"storage":[80],"node":[81],"is":[82,154,164],"not":[83],"perturbed":[84],"during":[85],"operation.":[88],"Consequently,":[89],"proposed":[91,152],"shows":[93],"under":[99],"varying":[100],"process,":[101],"voltage,":[102],"temperature":[104],"(PVT)":[105],"conditions.":[106],"addition,":[108],"unique":[110],"mechanism":[112],"reduces":[116],"less":[121,166],"one":[123],"third":[124],"consumed":[129],"by":[130],"when":[134],"laid":[135],"out":[136],"simulated":[138],"commercial":[141],"65-nm":[142],"technology.":[144],"soft":[146,160],"error":[147,161],"critical":[148],"charge":[149],"30%":[155],"larger":[156],"hence":[158],"rate":[162],"(SER)":[163],"approximately":[165],"half":[168],"that":[170],"cell.":[174],"It":[175],"takes":[176],"same":[177],"silicon":[178],"area":[179,191],"while":[183],"other":[184],"recently":[185],"reported":[186],"cells":[188],"incur":[189],"30-37%":[190],"overhead.":[192]},"counts_by_year":[{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":2},{"year":2014,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}