{"id":"https://openalex.org/W2052114501","doi":"https://doi.org/10.1145/1854153.1854187","title":"Modeling the impact of RTS on the reliability of ring oscillators","display_name":"Modeling the impact of RTS on the reliability of ring oscillators","publication_year":2010,"publication_date":"2010-09-06","ids":{"openalex":"https://openalex.org/W2052114501","doi":"https://doi.org/10.1145/1854153.1854187","mag":"2052114501"},"language":"en","primary_location":{"id":"doi:10.1145/1854153.1854187","is_oa":false,"landing_page_url":"https://doi.org/10.1145/1854153.1854187","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the 23rd symposium on Integrated circuits and system design","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5003461144","display_name":"Maur\u00edcio Banaszeski da Silva","orcid":"https://orcid.org/0000-0001-7434-6432"},"institutions":[{"id":"https://openalex.org/I130442723","display_name":"Universidade Federal do Rio Grande do Sul","ror":"https://ror.org/041yk2d64","country_code":"BR","type":"education","lineage":["https://openalex.org/I130442723"]}],"countries":["BR"],"is_corresponding":false,"raw_author_name":"Maur\u00edcio Banaszeski da Silva","raw_affiliation_strings":["Universidade Federal do Rio Grande do Sul, Porto Alegre, Brazil"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Universidade Federal do Rio Grande do Sul, Porto Alegre, Brazil","institution_ids":["https://openalex.org/I130442723"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5022015482","display_name":"Gilson Wirth","orcid":"https://orcid.org/0000-0002-4990-5113"},"institutions":[{"id":"https://openalex.org/I130442723","display_name":"Universidade Federal do Rio Grande do Sul","ror":"https://ror.org/041yk2d64","country_code":"BR","type":"education","lineage":["https://openalex.org/I130442723"]}],"countries":["BR"],"is_corresponding":false,"raw_author_name":"Gilson Wirth","raw_affiliation_strings":["Universidade Federal do Rio Grande do Sul, Porto Alegre, Brazil"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Universidade Federal do Rio Grande do Sul, Porto Alegre, Brazil","institution_ids":["https://openalex.org/I130442723"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I130442723"],"apc_list":null,"apc_paid":null,"fwci":0.4451,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.57450616,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"128","last_page":"133"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/jitter","display_name":"Jitter","score":0.8143454790115356},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.6786649823188782},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.6581993103027344},{"id":"https://openalex.org/keywords/ring","display_name":"Ring (chemistry)","score":0.6200023293495178},{"id":"https://openalex.org/keywords/noise","display_name":"Noise (video)","score":0.5678401589393616},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.5379250049591064},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5157051682472229},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4448716342449188},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4161558151245117},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.3750767707824707},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.35289162397384644},{"id":"https://openalex.org/keywords/engineering-physics","display_name":"Engineering physics","score":0.32531291246414185},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.31546491384506226},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.1817796528339386},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.17555806040763855},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.11026263236999512}],"concepts":[{"id":"https://openalex.org/C134652429","wikidata":"https://www.wikidata.org/wiki/Q1052698","display_name":"Jitter","level":2,"score":0.8143454790115356},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.6786649823188782},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.6581993103027344},{"id":"https://openalex.org/C2780378348","wikidata":"https://www.wikidata.org/wiki/Q25351438","display_name":"Ring (chemistry)","level":2,"score":0.6200023293495178},{"id":"https://openalex.org/C99498987","wikidata":"https://www.wikidata.org/wiki/Q2210247","display_name":"Noise (video)","level":3,"score":0.5678401589393616},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.5379250049591064},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5157051682472229},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4448716342449188},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4161558151245117},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3750767707824707},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.35289162397384644},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.32531291246414185},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.31546491384506226},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.1817796528339386},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.17555806040763855},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.11026263236999512},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.0},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.0},{"id":"https://openalex.org/C115961682","wikidata":"https://www.wikidata.org/wiki/Q860623","display_name":"Image (mathematics)","level":2,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1145/1854153.1854187","is_oa":false,"landing_page_url":"https://doi.org/10.1145/1854153.1854187","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the 23rd symposium on Integrated circuits and system design","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.49000000953674316,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":10,"referenced_works":["https://openalex.org/W617071296","https://openalex.org/W1715026339","https://openalex.org/W1970322682","https://openalex.org/W2032496947","https://openalex.org/W2035374584","https://openalex.org/W2069345435","https://openalex.org/W2080287417","https://openalex.org/W2112835374","https://openalex.org/W2150669723","https://openalex.org/W2161246726"],"related_works":["https://openalex.org/W2121182846","https://openalex.org/W2155789024","https://openalex.org/W2315668284","https://openalex.org/W3213608175","https://openalex.org/W3117675750","https://openalex.org/W2141743053","https://openalex.org/W2037276323","https://openalex.org/W2109491806","https://openalex.org/W4321379269","https://openalex.org/W1556217118"],"abstract_inverted_index":{"In":[0],"this":[1],"work":[2],"we":[3],"studied":[4],"the":[5,16,32,54,66],"effects":[6],"of":[7,31,59],"carrier":[8,35],"capture":[9,36],"and":[10,18,37,39,56],"emission":[11,38],"by":[12,69],"traps":[13],"located":[14],"at":[15],"silicon":[17,19],"dioxide":[20],"interface,":[21],"called":[22],"RTS":[23,70],"(Random":[24],"Telegraph":[25],"Signal).":[26],"A":[27],"brief":[28],"theoretical":[29],"study":[30,65],"physics":[33],"behind":[34],"its":[40],"impact":[41],"on":[42],"MOSFET":[43],"drain":[44],"current":[45],"is":[46,51],"presented.":[47],"The":[48],"theory":[49],"presented":[50],"utilized":[52],"in":[53],"analysis":[55],"electrical":[57],"simulation":[58],"single-ended":[60],"ring":[61],"oscillators,":[62],"intending":[63],"to":[64],"jitter":[67],"caused":[68],"noise.":[71]},"counts_by_year":[{"year":2012,"cited_by_count":1}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}