{"id":"https://openalex.org/W1998385236","doi":"https://doi.org/10.1145/1837274.1837495","title":"Impact of process variations on emerging memristor","display_name":"Impact of process variations on emerging memristor","publication_year":2010,"publication_date":"2010-06-13","ids":{"openalex":"https://openalex.org/W1998385236","doi":"https://doi.org/10.1145/1837274.1837495","mag":"1998385236"},"language":"en","primary_location":{"id":"doi:10.1145/1837274.1837495","is_oa":false,"landing_page_url":"https://doi.org/10.1145/1837274.1837495","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the 47th Design Automation Conference","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5068606980","display_name":"Dimin Niu","orcid":"https://orcid.org/0000-0001-8440-3875"},"institutions":[{"id":"https://openalex.org/I130769515","display_name":"Pennsylvania State University","ror":"https://ror.org/04p491231","country_code":"US","type":"education","lineage":["https://openalex.org/I130769515"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Dimin Niu","raw_affiliation_strings":["Pennsylvania State University, University Park, PA","PENNSYLVANIA STATE UNIVERSITY, UNIVERSITY PARK, PA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Pennsylvania State University, University Park, PA","institution_ids":["https://openalex.org/I130769515"]},{"raw_affiliation_string":"PENNSYLVANIA STATE UNIVERSITY, UNIVERSITY PARK, PA","institution_ids":["https://openalex.org/I130769515"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5058073627","display_name":"Yiran Chen","orcid":"https://orcid.org/0000-0002-1486-8412"},"institutions":[{"id":"https://openalex.org/I131787340","display_name":"Seagate (United States)","ror":"https://ror.org/04p1xtv71","country_code":"US","type":"company","lineage":["https://openalex.org/I131787340"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Yiran Chen","raw_affiliation_strings":["Seagate Technology, Bloomington, MN",", Seagate Technology, Bloomington, MN, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Seagate Technology, Bloomington, MN","institution_ids":["https://openalex.org/I131787340"]},{"raw_affiliation_string":", Seagate Technology, Bloomington, MN, USA","institution_ids":["https://openalex.org/I131787340"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5055434477","display_name":"Cong Xu","orcid":"https://orcid.org/0000-0002-9288-1743"},"institutions":[{"id":"https://openalex.org/I130769515","display_name":"Pennsylvania State University","ror":"https://ror.org/04p491231","country_code":"US","type":"education","lineage":["https://openalex.org/I130769515"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Cong Xu","raw_affiliation_strings":["Pennsylvania State University, University Park, PA","PENNSYLVANIA STATE UNIVERSITY, UNIVERSITY PARK, PA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Pennsylvania State University, University Park, PA","institution_ids":["https://openalex.org/I130769515"]},{"raw_affiliation_string":"PENNSYLVANIA STATE UNIVERSITY, UNIVERSITY PARK, PA","institution_ids":["https://openalex.org/I130769515"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100385336","display_name":"Yuan Xie","orcid":"https://orcid.org/0000-0003-2093-1788"},"institutions":[{"id":"https://openalex.org/I130769515","display_name":"Pennsylvania State University","ror":"https://ror.org/04p491231","country_code":"US","type":"education","lineage":["https://openalex.org/I130769515"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Yuan Xie","raw_affiliation_strings":["Pennsylvania State University, University Park, PA","PENNSYLVANIA STATE UNIVERSITY, UNIVERSITY PARK, PA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Pennsylvania State University, University Park, PA","institution_ids":["https://openalex.org/I130769515"]},{"raw_affiliation_string":"PENNSYLVANIA STATE UNIVERSITY, UNIVERSITY PARK, PA","institution_ids":["https://openalex.org/I130769515"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":12.9066,"has_fulltext":false,"cited_by_count":134,"citation_normalized_percentile":{"value":0.99342105,"is_in_top_1_percent":true,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":95,"max":100},"biblio":{"volume":null,"issue":null,"first_page":"877","last_page":"882"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9986000061035156,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/memristor","display_name":"Memristor","score":0.9820444583892822},{"id":"https://openalex.org/keywords/memistor","display_name":"Memistor","score":0.7533431649208069},{"id":"https://openalex.org/keywords/scalability","display_name":"Scalability","score":0.5840939283370972},{"id":"https://openalex.org/keywords/process","display_name":"Process (computing)","score":0.5603487491607666},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5265524387359619},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4732043147087097},{"id":"https://openalex.org/keywords/resistive-random-access-memory","display_name":"Resistive random-access memory","score":0.4200300872325897},{"id":"https://openalex.org/keywords/monte-carlo-method","display_name":"Monte Carlo method","score":0.4161585867404938},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.27514320611953735},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.1977786421775818},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.18939369916915894},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.16664385795593262}],"concepts":[{"id":"https://openalex.org/C150072547","wikidata":"https://www.wikidata.org/wiki/Q212923","display_name":"Memristor","level":2,"score":0.9820444583892822},{"id":"https://openalex.org/C1895703","wikidata":"https://www.wikidata.org/wiki/Q6034938","display_name":"Memistor","level":4,"score":0.7533431649208069},{"id":"https://openalex.org/C48044578","wikidata":"https://www.wikidata.org/wiki/Q727490","display_name":"Scalability","level":2,"score":0.5840939283370972},{"id":"https://openalex.org/C98045186","wikidata":"https://www.wikidata.org/wiki/Q205663","display_name":"Process (computing)","level":2,"score":0.5603487491607666},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5265524387359619},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4732043147087097},{"id":"https://openalex.org/C182019814","wikidata":"https://www.wikidata.org/wiki/Q1143830","display_name":"Resistive random-access memory","level":3,"score":0.4200300872325897},{"id":"https://openalex.org/C19499675","wikidata":"https://www.wikidata.org/wiki/Q232207","display_name":"Monte Carlo method","level":2,"score":0.4161585867404938},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.27514320611953735},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.1977786421775818},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.18939369916915894},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.16664385795593262},{"id":"https://openalex.org/C105795698","wikidata":"https://www.wikidata.org/wiki/Q12483","display_name":"Statistics","level":1,"score":0.0},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0},{"id":"https://openalex.org/C77088390","wikidata":"https://www.wikidata.org/wiki/Q8513","display_name":"Database","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1145/1837274.1837495","is_oa":false,"landing_page_url":"https://doi.org/10.1145/1837274.1837495","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the 47th Design Automation Conference","raw_type":"proceedings-article"},{"id":"pmh:oai:repository.hkust.edu.hk:1783.1-133887","is_oa":false,"landing_page_url":"https://repository.hkust.edu.hk/ir/Record/1783.1-133887","pdf_url":null,"source":{"id":"https://openalex.org/S4306401796","display_name":"Rare & Special e-Zone (The Hong Kong University of Science and Technology)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I200769079","host_organization_name":"Hong Kong University of Science and Technology","host_organization_lineage":["https://openalex.org/I200769079"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"Conference paper"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[{"id":"https://openalex.org/G1691993035","display_name":null,"funder_award_id":"6.44E+26","funder_id":"https://openalex.org/F4320306076","funder_display_name":"National Science Foundation"}],"funders":[{"id":"https://openalex.org/F4320306076","display_name":"National Science Foundation","ror":"https://ror.org/021nxhr62"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":15,"referenced_works":["https://openalex.org/W1503492383","https://openalex.org/W1861596126","https://openalex.org/W1870293527","https://openalex.org/W1968288892","https://openalex.org/W1976888718","https://openalex.org/W2017265403","https://openalex.org/W2027895023","https://openalex.org/W2097133954","https://openalex.org/W2103531629","https://openalex.org/W2112181056","https://openalex.org/W2114131053","https://openalex.org/W2141071915","https://openalex.org/W2162651880","https://openalex.org/W4251453505","https://openalex.org/W4251835410"],"related_works":["https://openalex.org/W1968537616","https://openalex.org/W4308413551","https://openalex.org/W1567000137","https://openalex.org/W4313854508","https://openalex.org/W2795463944","https://openalex.org/W3173413269","https://openalex.org/W4251693286","https://openalex.org/W2094452907","https://openalex.org/W4317665987","https://openalex.org/W3001772581"],"abstract_inverted_index":{"The":[0,27],"memristor,":[1],"known":[2],"as":[3,46],"the":[4,16,32,62,66,75,78,85,91,94,105,111,115,121,129,132,136,140,161,164,169,175,190,195],"fourth":[5],"basic":[6],"two-terminal":[7],"circuit":[8,122],"element,":[9],"has":[10,31],"attracted":[11],"many":[12],"research":[13],"interests":[14],"since":[15],"first":[17],"real":[18],"device":[19,30,191],"was":[20],"developed":[21],"by":[22,61],"HP":[23],"labs":[24],"in":[25,90,194],"2008.":[26],"nano-scale":[28],"memristive":[29],"potential":[33],"to":[34,101,120,159,188],"construct":[35],"some":[36],"novel":[37],"computing":[38],"systems":[39],"because":[40],"of":[41,56,77,82,93,107,114,131,139,163,171,177],"its":[42,118],"distinctive":[43],"characters,":[44],"such":[45],"non-volatility,":[47],"non-linearity,":[48],"low-power,":[49],"and":[50,65,88,103,117,150],"good":[51],"scalability.":[52],"These":[53],"electrical":[54,80,112,137],"characteristics":[55,138],"memristors":[57,83],"are":[58,157,186],"mainly":[59],"determined":[60],"material":[63],"characteristic":[64],"fabrication":[67],"process.":[68],"For":[69],"example,":[70],"process":[71,108,178],"variations":[72,109,134],"may":[73],"cause":[74],"deviation":[76],"actual":[79],"behavior":[81],"from":[84],"original":[86],"design":[87],"result":[89],"malfunction":[92],"device.":[95],"Therefore,":[96],"it":[97],"is":[98],"very":[99],"important":[100],"understand":[102],"characterize":[104],"impact":[106,130,176],"on":[110,135,181],"behaviors":[113],"memristor":[116,173],"implication":[119],"design.":[123],"In":[124],"this":[125],"paper,":[126],"we":[127],"analyze":[128],"geometry":[133],"memristor.":[141],"Two":[142],"parameters":[143],"-":[144],"NARD":[145],"(Normalized":[146,152],"Accumulative":[147,153],"Resistance":[148,155],"Deviation)":[149],"NAARD":[151],"Absolute":[154],"Deviation),":[156],"introduced":[158],"measure":[160],"fluctuation":[162],"overall":[165],"internal":[166],"state":[167],"(or":[168],"resistance)":[170],"a":[172],"under":[174],"variations.":[179],"Based":[180],"our":[182],"analysis,":[183],"Monte-Carlo":[184],"simulations":[185],"conducted":[187],"evaluate":[189],"mismatch":[192],"effects":[193],"memristor-based":[196],"memory.":[197]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":5},{"year":2023,"cited_by_count":7},{"year":2022,"cited_by_count":5},{"year":2021,"cited_by_count":6},{"year":2020,"cited_by_count":11},{"year":2019,"cited_by_count":15},{"year":2018,"cited_by_count":6},{"year":2017,"cited_by_count":13},{"year":2016,"cited_by_count":15},{"year":2015,"cited_by_count":10},{"year":2014,"cited_by_count":10},{"year":2013,"cited_by_count":17},{"year":2012,"cited_by_count":7}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}