{"id":"https://openalex.org/W2044880283","doi":"https://doi.org/10.1145/1785481.1785506","title":"A mask double patterning technique using litho simulation by wavelet transform","display_name":"A mask double patterning technique using litho simulation by wavelet transform","publication_year":2010,"publication_date":"2010-05-16","ids":{"openalex":"https://openalex.org/W2044880283","doi":"https://doi.org/10.1145/1785481.1785506","mag":"2044880283"},"language":"en","primary_location":{"id":"doi:10.1145/1785481.1785506","is_oa":false,"landing_page_url":"https://doi.org/10.1145/1785481.1785506","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the 20th symposium on Great lakes symposium on VLSI","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5103414058","display_name":"Rance Rodrigues","orcid":null},"institutions":[],"countries":[],"is_corresponding":true,"raw_author_name":"Rance Rodrigues","raw_affiliation_strings":["University of Massachusetts at Amherst, Amherst, MA, USA","University of Massachusetts at Amherst, Amherst , MA, USA"],"affiliations":[{"raw_affiliation_string":"University of Massachusetts at Amherst, Amherst, MA, USA","institution_ids":[]},{"raw_affiliation_string":"University of Massachusetts at Amherst, Amherst , MA, USA","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5054064879","display_name":"Sandip Kundu","orcid":"https://orcid.org/0000-0001-8221-3824"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Sandip Kundu","raw_affiliation_strings":["University of Massachusetts at Amherst, Amherst, MA, USA","University of Massachusetts at Amherst, Amherst , MA, USA"],"affiliations":[{"raw_affiliation_string":"University of Massachusetts at Amherst, Amherst, MA, USA","institution_ids":[]},{"raw_affiliation_string":"University of Massachusetts at Amherst, Amherst , MA, USA","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5103414058"],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.2886,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.62706319,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"103","last_page":"106"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11338","display_name":"Advancements in Photolithography Techniques","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11338","display_name":"Advancements in Photolithography Techniques","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12224","display_name":"Nanofabrication and Lithography Techniques","score":0.9947999715805054,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11517","display_name":"Advanced optical system design","score":0.9945999979972839,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/optical-proximity-correction","display_name":"Optical proximity correction","score":0.8293964862823486},{"id":"https://openalex.org/keywords/lithography","display_name":"Lithography","score":0.7819569110870361},{"id":"https://openalex.org/keywords/multiple-patterning","display_name":"Multiple patterning","score":0.7583288550376892},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.6966075301170349},{"id":"https://openalex.org/keywords/masking","display_name":"Masking (illustration)","score":0.5625144839286804},{"id":"https://openalex.org/keywords/process-window","display_name":"Process window","score":0.5062781572341919},{"id":"https://openalex.org/keywords/computational-lithography","display_name":"Computational lithography","score":0.48685139417648315},{"id":"https://openalex.org/keywords/resist","display_name":"Resist","score":0.478023886680603},{"id":"https://openalex.org/keywords/design-for-manufacturability","display_name":"Design for manufacturability","score":0.475897878408432},{"id":"https://openalex.org/keywords/photolithography","display_name":"Photolithography","score":0.4706147313117981},{"id":"https://openalex.org/keywords/semiconductor-device-fabrication","display_name":"Semiconductor device fabrication","score":0.45952731370925903},{"id":"https://openalex.org/keywords/process","display_name":"Process (computing)","score":0.4571218192577362},{"id":"https://openalex.org/keywords/node","display_name":"Node (physics)","score":0.4552806615829468},{"id":"https://openalex.org/keywords/throughput","display_name":"Throughput","score":0.4384404718875885},{"id":"https://openalex.org/keywords/immersion-lithography","display_name":"Immersion lithography","score":0.4224567115306854},{"id":"https://openalex.org/keywords/enhanced-data-rates-for-gsm-evolution","display_name":"Enhanced Data Rates for GSM Evolution","score":0.41145145893096924},{"id":"https://openalex.org/keywords/wafer","display_name":"Wafer","score":0.3647831082344055},{"id":"https://openalex.org/keywords/optics","display_name":"Optics","score":0.3421047627925873},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.25177955627441406},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.22259056568145752},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.20413807034492493},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.16393187642097473},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.16308224201202393},{"id":"https://openalex.org/keywords/artificial-intelligence","display_name":"Artificial intelligence","score":0.15421035885810852},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.12143772840499878},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.11210760474205017}],"concepts":[{"id":"https://openalex.org/C78371743","wikidata":"https://www.wikidata.org/wiki/Q1672829","display_name":"Optical proximity correction","level":3,"score":0.8293964862823486},{"id":"https://openalex.org/C204223013","wikidata":"https://www.wikidata.org/wiki/Q133036","display_name":"Lithography","level":2,"score":0.7819569110870361},{"id":"https://openalex.org/C177409738","wikidata":"https://www.wikidata.org/wiki/Q1917460","display_name":"Multiple patterning","level":4,"score":0.7583288550376892},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.6966075301170349},{"id":"https://openalex.org/C2777402240","wikidata":"https://www.wikidata.org/wiki/Q6783436","display_name":"Masking (illustration)","level":2,"score":0.5625144839286804},{"id":"https://openalex.org/C2777441419","wikidata":"https://www.wikidata.org/wiki/Q16969460","display_name":"Process window","level":3,"score":0.5062781572341919},{"id":"https://openalex.org/C182873914","wikidata":"https://www.wikidata.org/wiki/Q5157329","display_name":"Computational lithography","level":5,"score":0.48685139417648315},{"id":"https://openalex.org/C53524968","wikidata":"https://www.wikidata.org/wiki/Q7315582","display_name":"Resist","level":3,"score":0.478023886680603},{"id":"https://openalex.org/C62064638","wikidata":"https://www.wikidata.org/wiki/Q553878","display_name":"Design for manufacturability","level":2,"score":0.475897878408432},{"id":"https://openalex.org/C105487726","wikidata":"https://www.wikidata.org/wiki/Q622938","display_name":"Photolithography","level":2,"score":0.4706147313117981},{"id":"https://openalex.org/C66018809","wikidata":"https://www.wikidata.org/wiki/Q1570432","display_name":"Semiconductor device fabrication","level":3,"score":0.45952731370925903},{"id":"https://openalex.org/C98045186","wikidata":"https://www.wikidata.org/wiki/Q205663","display_name":"Process (computing)","level":2,"score":0.4571218192577362},{"id":"https://openalex.org/C62611344","wikidata":"https://www.wikidata.org/wiki/Q1062658","display_name":"Node (physics)","level":2,"score":0.4552806615829468},{"id":"https://openalex.org/C157764524","wikidata":"https://www.wikidata.org/wiki/Q1383412","display_name":"Throughput","level":3,"score":0.4384404718875885},{"id":"https://openalex.org/C94263209","wikidata":"https://www.wikidata.org/wiki/Q1076175","display_name":"Immersion lithography","level":4,"score":0.4224567115306854},{"id":"https://openalex.org/C162307627","wikidata":"https://www.wikidata.org/wiki/Q204833","display_name":"Enhanced Data Rates for GSM Evolution","level":2,"score":0.41145145893096924},{"id":"https://openalex.org/C160671074","wikidata":"https://www.wikidata.org/wiki/Q267131","display_name":"Wafer","level":2,"score":0.3647831082344055},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.3421047627925873},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.25177955627441406},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.22259056568145752},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.20413807034492493},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.16393187642097473},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.16308224201202393},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.15421035885810852},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.12143772840499878},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.11210760474205017},{"id":"https://openalex.org/C153349607","wikidata":"https://www.wikidata.org/wiki/Q36649","display_name":"Visual arts","level":1,"score":0.0},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C142362112","wikidata":"https://www.wikidata.org/wiki/Q735","display_name":"Art","level":0,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C555944384","wikidata":"https://www.wikidata.org/wiki/Q249","display_name":"Wireless","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1145/1785481.1785506","is_oa":false,"landing_page_url":"https://doi.org/10.1145/1785481.1785506","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the 20th symposium on Great lakes symposium on VLSI","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/9","display_name":"Industry, innovation and infrastructure","score":0.4399999976158142}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":12,"referenced_works":["https://openalex.org/W1979616688","https://openalex.org/W1990184359","https://openalex.org/W2009102457","https://openalex.org/W2015622761","https://openalex.org/W2021311077","https://openalex.org/W2094370252","https://openalex.org/W2114153270","https://openalex.org/W2146192871","https://openalex.org/W2148115459","https://openalex.org/W2152190733","https://openalex.org/W2175772671","https://openalex.org/W3149318025"],"related_works":["https://openalex.org/W1991236041","https://openalex.org/W2064613305","https://openalex.org/W2050847819","https://openalex.org/W2606576291","https://openalex.org/W2805341030","https://openalex.org/W1988961408","https://openalex.org/W1975854055","https://openalex.org/W2156443994","https://openalex.org/W2791370716","https://openalex.org/W2016087745"],"abstract_inverted_index":{"Optical":[0,84],"Lithography":[1,100],"is":[2,27,44,134,240],"a":[3,75,109,122,135,174,184],"key":[4],"to":[5,12,21,29,139,186,212],"semiconductor":[6],"device":[7],"scaling.":[8],"As":[9,36],"technology":[10,34,115],"continues":[11],"scale,":[13],"the":[14,37,42,48,54,59,63,198,202,209,216,228,246,250],"fundamental":[15],"limits":[16],"of":[17,50,77,150,163,205,227,252],"lithography":[18,55,191],"are":[19,72,128],"pushed":[20],"an":[22],"extreme.":[23],"Today":[24],"193nm":[25],"light":[26,51],"used":[28,52],"print":[30],"features":[31],"in":[32,65,111,121,208,215],"45nm":[33],"node.":[35],"minimum":[38],"feature":[39],"size":[40],"on":[41,173,223],"mask":[43,60,66,123,141,210],"less":[45],"than":[46],"half":[47],"wavelength":[49],"for":[53],"process,":[56],"diffraction":[57],"at":[58],"edges":[61],"dominates":[62],"errors":[64],"printing.":[67],"Mask":[68],"transfer":[69],"fidelity":[70],"issues":[71],"countered":[73],"using":[74,189],"number":[76],"Resolution":[78,93],"Enhancement":[79],"Techniques":[80],"(RET)":[81],"which":[82],"include":[83],"Proximity":[85],"Correction":[86],"(OPC),":[87],"Phase":[88],"Shift":[89],"Masking":[90],"(PSM),":[91],"Sub":[92],"Assist":[94],"Features":[95],"(SRAF)":[96],"and":[97,113,154],"Dual":[98],"Patterning":[99],"(DPL).":[101],"DPL":[102,131,188],"reduces":[103],"wafer":[104],"throughput":[105],"but":[106,200],"has":[107],"become":[108],"necessity":[110],"current":[112],"upcoming":[114],"nodes.":[116],"It":[117],"involves":[118],"splitting":[119],"patterns":[120],"into":[124,194],"two":[125],"masks":[126],"that":[127,158,233],"exposed":[129],"separately.":[130],"CAD":[132],"problem":[133,138],"pattern":[136],"coloring":[137],"minimize":[140],"edge":[142],"placement":[143],"error":[144],"(EPE).":[145],"EPE":[146],"results":[147,222],"from":[148,166],"interaction":[149,162],"near":[151],"field":[152],"waves":[153],"any":[155],"geometric":[156,177],"solution":[157,239],"does":[159],"not":[160,196],"consider":[161],"fields,":[164],"suffers":[165],"inaccuracies.":[167],"Previous":[168],"publications":[169],"were":[170],"mostly":[171],"focused":[172],"rule":[175],"based":[176,238],"solution.":[178],"In":[179],"this":[180],"paper":[181],"we":[182],"investigate":[183],"method":[185],"implement":[187],"fast":[190],"simulation":[192],"taking":[193],"account":[195],"only":[197],"bad,":[199],"also":[201],"beneficial":[203],"effects":[204],"having":[206],"polygons":[207],"close":[211],"one":[213],"another":[214],"final":[217,247],"partitioned":[218],"layout.":[219],"We":[220],"present":[221],"metal":[224],"layer":[225],"2":[226],"ISCAS-85":[229],"benchmarks.":[230],"Results":[231],"show":[232],"even":[234],"though":[235],"our":[236],"model":[237],"slower,":[241],"unlike":[242],"many":[243],"previous":[244],"approaches,":[245],"output":[248],"meets":[249],"objectives":[251],"reducing":[253],"EPE.":[254]},"counts_by_year":[{"year":2015,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}