{"id":"https://openalex.org/W2035861944","doi":"https://doi.org/10.1145/1741906.1742119","title":"Impact of concentration dependent carrier mobility & lifetime on opaque gate controlled MESFET","display_name":"Impact of concentration dependent carrier mobility & lifetime on opaque gate controlled MESFET","publication_year":2010,"publication_date":"2010-02-26","ids":{"openalex":"https://openalex.org/W2035861944","doi":"https://doi.org/10.1145/1741906.1742119","mag":"2035861944"},"language":"en","primary_location":{"id":"doi:10.1145/1741906.1742119","is_oa":false,"landing_page_url":"https://doi.org/10.1145/1741906.1742119","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the International Conference and Workshop on Emerging Trends in Technology","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5026279024","display_name":"Rajesh B. Lohani","orcid":"https://orcid.org/0000-0003-2888-455X"},"institutions":[{"id":"https://openalex.org/I4210112052","display_name":"Indian Institute of Technology Goa","ror":"https://ror.org/02v7trd43","country_code":"IN","type":"education","lineage":["https://openalex.org/I4210112052"]}],"countries":["IN"],"is_corresponding":true,"raw_author_name":"R. B. Lohani","raw_affiliation_strings":["Goa College of Engineering (Govt. of Goa), Ponda, Goa, India"],"affiliations":[{"raw_affiliation_string":"Goa College of Engineering (Govt. of Goa), Ponda, Goa, India","institution_ids":["https://openalex.org/I4210112052"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5087307854","display_name":"Jaya V. Gaitonde","orcid":null},"institutions":[{"id":"https://openalex.org/I4210112052","display_name":"Indian Institute of Technology Goa","ror":"https://ror.org/02v7trd43","country_code":"IN","type":"education","lineage":["https://openalex.org/I4210112052"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"J. Gaitonde","raw_affiliation_strings":["Goa College of Engineering (Govt. of Goa), Ponda, Goa, India"],"affiliations":[{"raw_affiliation_string":"Goa College of Engineering (Govt. of Goa), Ponda, Goa, India","institution_ids":["https://openalex.org/I4210112052"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5026279024"],"corresponding_institution_ids":["https://openalex.org/I4210112052"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.10441558,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"923","last_page":"924"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9980000257492065,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9980000257492065,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9927999973297119,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9922999739646912,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/mesfet","display_name":"MESFET","score":0.9453949928283691},{"id":"https://openalex.org/keywords/opacity","display_name":"Opacity","score":0.7879980802536011},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.711163341999054},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6686311960220337},{"id":"https://openalex.org/keywords/electron-mobility","display_name":"Electron mobility","score":0.5464966297149658},{"id":"https://openalex.org/keywords/impurity","display_name":"Impurity","score":0.5253034234046936},{"id":"https://openalex.org/keywords/photodetector","display_name":"Photodetector","score":0.4840254485607147},{"id":"https://openalex.org/keywords/optics","display_name":"Optics","score":0.2422831952571869},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.21939414739608765},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.19072285294532776},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.17305728793144226},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.12278386950492859},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.10823243856430054},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.10797443985939026},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.07026270031929016}],"concepts":[{"id":"https://openalex.org/C134123091","wikidata":"https://www.wikidata.org/wiki/Q1837339","display_name":"MESFET","level":5,"score":0.9453949928283691},{"id":"https://openalex.org/C60056205","wikidata":"https://www.wikidata.org/wiki/Q691914","display_name":"Opacity","level":2,"score":0.7879980802536011},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.711163341999054},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6686311960220337},{"id":"https://openalex.org/C106782819","wikidata":"https://www.wikidata.org/wiki/Q6501076","display_name":"Electron mobility","level":2,"score":0.5464966297149658},{"id":"https://openalex.org/C71987851","wikidata":"https://www.wikidata.org/wiki/Q7216430","display_name":"Impurity","level":2,"score":0.5253034234046936},{"id":"https://openalex.org/C23125352","wikidata":"https://www.wikidata.org/wiki/Q210765","display_name":"Photodetector","level":2,"score":0.4840254485607147},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.2422831952571869},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.21939414739608765},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.19072285294532776},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.17305728793144226},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.12278386950492859},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.10823243856430054},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.10797443985939026},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.07026270031929016},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1145/1741906.1742119","is_oa":false,"landing_page_url":"https://doi.org/10.1145/1741906.1742119","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the International Conference and Workshop on Emerging Trends in Technology","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.47999998927116394,"display_name":"Responsible consumption and production","id":"https://metadata.un.org/sdg/12"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":4,"referenced_works":["https://openalex.org/W2057077686","https://openalex.org/W2123280160","https://openalex.org/W2151718880","https://openalex.org/W2171721176"],"related_works":["https://openalex.org/W2065685932","https://openalex.org/W2005909799","https://openalex.org/W2899899469","https://openalex.org/W1072792401","https://openalex.org/W2019050294","https://openalex.org/W2193085994","https://openalex.org/W4233483383","https://openalex.org/W2132290171","https://openalex.org/W1976068333","https://openalex.org/W2047252955"],"abstract_inverted_index":{"Optically":[0,34],"controlled":[1,35,74],"MESFET":[2,36,77],"are":[3,18],"useful":[4],"device":[5],"for":[6],"optical":[7,73],"communication":[8],"and":[9,13,52,66],"as":[10],"photodetectors.":[11],"Mobility":[12,65],"life":[14,53,67],"time":[15,54,68],"of":[16,21,30,44,55],"carriers":[17],"strongly":[19],"function":[20],"impurity":[22],"concentration.":[23],"In":[24],"this":[25],"paper":[26],"the":[27,40,45,61],"IV":[28],"characteristerstics":[29],"an":[31],"opaque":[32,75],"gate":[33,76],"is":[37],"presented":[38],"at":[39],"low":[41],"impedance":[42],"state":[43],"device.":[46],"Considering":[47],"concentration":[48,62],"dependent":[49,63],"carrier":[50],"mobility":[51],"carrier.":[56],"The":[57],"result":[58],"indicate":[59],"that":[60],"mo":[64],"have":[69],"strong":[70],"effect":[71],"on":[72],"characteristics.":[78]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}