{"id":"https://openalex.org/W2106313286","doi":"https://doi.org/10.1145/1687399.1687490","title":"Nanoelectromechanical (NEM) relays integrated with CMOS SRAM for improved stability and low leakage","display_name":"Nanoelectromechanical (NEM) relays integrated with CMOS SRAM for improved stability and low leakage","publication_year":2009,"publication_date":"2009-11-02","ids":{"openalex":"https://openalex.org/W2106313286","doi":"https://doi.org/10.1145/1687399.1687490","mag":"2106313286"},"language":"en","primary_location":{"id":"doi:10.1145/1687399.1687490","is_oa":false,"landing_page_url":"https://doi.org/10.1145/1687399.1687490","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the 2009 International Conference on Computer-Aided Design","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5110145070","display_name":"Soogine Chong","orcid":null},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Soogine Chong","raw_affiliation_strings":["Stanford University, Stanford, CA","Department of Electrical Engineering, Stanford University Stanford, CA 94305, U.S.A., 1-650-725-0419"],"affiliations":[{"raw_affiliation_string":"Stanford University, Stanford, CA","institution_ids":["https://openalex.org/I97018004"]},{"raw_affiliation_string":"Department of Electrical Engineering, Stanford University Stanford, CA 94305, U.S.A., 1-650-725-0419","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5067464561","display_name":"Kerem Akarvardar","orcid":"https://orcid.org/0000-0001-5957-826X"},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Kerem Akarvardar","raw_affiliation_strings":["Stanford University, Stanford, CA","Department of Electrical Engineering, Stanford University Stanford, CA 94305, U.S.A., 1-650-725-0419"],"affiliations":[{"raw_affiliation_string":"Stanford University, Stanford, CA","institution_ids":["https://openalex.org/I97018004"]},{"raw_affiliation_string":"Department of Electrical Engineering, Stanford University Stanford, CA 94305, U.S.A., 1-650-725-0419","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5046562428","display_name":"Roozbeh Parsa","orcid":null},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Roozbeh Parsa","raw_affiliation_strings":["Stanford University, Stanford, CA","Department of Electrical Engineering, Stanford University Stanford, CA 94305, U.S.A., 1-650-725-0419"],"affiliations":[{"raw_affiliation_string":"Stanford University, Stanford, CA","institution_ids":["https://openalex.org/I97018004"]},{"raw_affiliation_string":"Department of Electrical Engineering, Stanford University Stanford, CA 94305, U.S.A., 1-650-725-0419","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5061788789","display_name":"Jun\u2010Bo Yoon","orcid":"https://orcid.org/0000-0002-9447-3807"},"institutions":[{"id":"https://openalex.org/I157485424","display_name":"Korea Advanced Institute of Science and Technology","ror":"https://ror.org/05apxxy63","country_code":"KR","type":"education","lineage":["https://openalex.org/I157485424"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jun-Bo Yoon","raw_affiliation_strings":["KAIST, Yuseong-gu, Daejon, Korea","Department of Electrical Engineering and Computer Science, KAIST, 373-1, Guseong-dong, Yuseong-gu, Daejon, Korea, 82-42-869-3476"],"affiliations":[{"raw_affiliation_string":"KAIST, Yuseong-gu, Daejon, Korea","institution_ids":["https://openalex.org/I157485424"]},{"raw_affiliation_string":"Department of Electrical Engineering and Computer Science, KAIST, 373-1, Guseong-dong, Yuseong-gu, Daejon, Korea, 82-42-869-3476","institution_ids":["https://openalex.org/I157485424"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5021259927","display_name":"Roger T. Howe","orcid":"https://orcid.org/0000-0002-4554-7347"},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Roger T. Howe","raw_affiliation_strings":["Stanford University, Stanford, CA","Department of Electrical Engineering, Stanford University Stanford, CA 94305, U.S.A., 1-650-725-0419"],"affiliations":[{"raw_affiliation_string":"Stanford University, Stanford, CA","institution_ids":["https://openalex.org/I97018004"]},{"raw_affiliation_string":"Department of Electrical Engineering, Stanford University Stanford, CA 94305, U.S.A., 1-650-725-0419","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5036312663","display_name":"Subhasish Mitra","orcid":"https://orcid.org/0000-0002-5572-5194"},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Subhasish Mitra","raw_affiliation_strings":["Stanford University, Stanford, CA","Department of Electrical Engineering, Stanford University Stanford, CA 94305, U.S.A., 1-650-725-0419"],"affiliations":[{"raw_affiliation_string":"Stanford University, Stanford, CA","institution_ids":["https://openalex.org/I97018004"]},{"raw_affiliation_string":"Department of Electrical Engineering, Stanford University Stanford, CA 94305, U.S.A., 1-650-725-0419","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5059975258","display_name":"H.\u2010S. Philip Wong","orcid":"https://orcid.org/0000-0002-0096-1472"},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"H.-S. Philip Wong","raw_affiliation_strings":["Stanford University, Stanford, CA","Department of Electrical Engineering, Stanford University Stanford, CA 94305, U.S.A., 1-650-725-0419"],"affiliations":[{"raw_affiliation_string":"Stanford University, Stanford, CA","institution_ids":["https://openalex.org/I97018004"]},{"raw_affiliation_string":"Department of Electrical Engineering, Stanford University Stanford, CA 94305, U.S.A., 1-650-725-0419","institution_ids":["https://openalex.org/I97018004"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":7,"corresponding_author_ids":["https://openalex.org/A5110145070"],"corresponding_institution_ids":["https://openalex.org/I97018004"],"apc_list":null,"apc_paid":null,"fwci":5.7077,"has_fulltext":false,"cited_by_count":80,"citation_normalized_percentile":{"value":0.96797196,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":90,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"478","last_page":"484"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10923","display_name":"Force Microscopy Techniques and Applications","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10923","display_name":"Force Microscopy Techniques and Applications","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11301","display_name":"Advanced Surface Polishing Techniques","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.856719970703125},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.8066563606262207},{"id":"https://openalex.org/keywords/dissipation","display_name":"Dissipation","score":0.6357322931289673},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.633029043674469},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5189228057861328},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.5002169609069824},{"id":"https://openalex.org/keywords/subthreshold-conduction","display_name":"Subthreshold conduction","score":0.47650089859962463},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4760662913322449},{"id":"https://openalex.org/keywords/noise-margin","display_name":"Noise margin","score":0.4724588394165039},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4118836522102356},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.35643094778060913},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.3522154986858368},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.16997182369232178}],"concepts":[{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.856719970703125},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.8066563606262207},{"id":"https://openalex.org/C135402231","wikidata":"https://www.wikidata.org/wiki/Q898440","display_name":"Dissipation","level":2,"score":0.6357322931289673},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.633029043674469},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5189228057861328},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.5002169609069824},{"id":"https://openalex.org/C156465305","wikidata":"https://www.wikidata.org/wiki/Q1658601","display_name":"Subthreshold conduction","level":4,"score":0.47650089859962463},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4760662913322449},{"id":"https://openalex.org/C179499742","wikidata":"https://www.wikidata.org/wiki/Q1324892","display_name":"Noise margin","level":4,"score":0.4724588394165039},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4118836522102356},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.35643094778060913},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.3522154986858368},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.16997182369232178},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.0},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1145/1687399.1687490","is_oa":false,"landing_page_url":"https://doi.org/10.1145/1687399.1687490","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the 2009 International Conference on Computer-Aided Design","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.8799999952316284,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[{"id":"https://openalex.org/F4320332195","display_name":"Samsung","ror":"https://ror.org/04w3jy968"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":32,"referenced_works":["https://openalex.org/W1496316476","https://openalex.org/W1753784006","https://openalex.org/W1964381031","https://openalex.org/W1968286361","https://openalex.org/W1969189258","https://openalex.org/W1975216008","https://openalex.org/W1991137688","https://openalex.org/W2002038549","https://openalex.org/W2002612140","https://openalex.org/W2009608485","https://openalex.org/W2016655135","https://openalex.org/W2060385046","https://openalex.org/W2067168777","https://openalex.org/W2067392247","https://openalex.org/W2084629594","https://openalex.org/W2106507957","https://openalex.org/W2110475419","https://openalex.org/W2121437544","https://openalex.org/W2148465323","https://openalex.org/W2157743350","https://openalex.org/W2168356039","https://openalex.org/W2187944192","https://openalex.org/W2397682474","https://openalex.org/W4229881188","https://openalex.org/W4230282064","https://openalex.org/W4245185858","https://openalex.org/W4323915530","https://openalex.org/W4365799988","https://openalex.org/W4365806356","https://openalex.org/W4376568448","https://openalex.org/W6637817741","https://openalex.org/W6650729477"],"related_works":["https://openalex.org/W2117824263","https://openalex.org/W2071118425","https://openalex.org/W2134421493","https://openalex.org/W2924345281","https://openalex.org/W3086682201","https://openalex.org/W2743772479","https://openalex.org/W2118528827","https://openalex.org/W2775062502","https://openalex.org/W2044270051","https://openalex.org/W1544650831"],"abstract_inverted_index":{"We":[0],"present":[1],"a":[2,19,102,106,111],"hybrid":[3],"nanoelectromechanical":[4],"(NEM)/CMOS":[5],"static":[6,73,138,150,173],"random":[7],"access":[8],"memory":[9],"(SRAM)":[10],"cell,":[11,116],"in":[12,94,170],"which":[13],"the":[14,36,49,54,63,82,88],"two":[15],"pull-down":[16],"transistors":[17],"of":[18,43,67,87,105],"conventional":[20,55],"CMOS":[21,56,113],"six":[22],"transistor":[23],"(6T)":[24],"SRAM":[25,33,58,115],"cell":[26,34,50],"are":[27,99,133,176],"replaced":[28],"with":[29,180],"NEM":[30,44,68,89,107,119],"relays.":[31],"This":[32],"utilizes":[35,62],"infinite":[37],"subthreshold":[38],"slope":[39],"and":[40,136,145,172],"hysteretic":[41],"properties":[42],"relays":[45,69,90,120],"to":[46,53,70,110,178],"dramatically":[47],"increase":[48,179],"stability":[51],"compared":[52],"6T":[57,114],"cells.":[59],"It":[60],"also":[61],"zero":[64],"off-state":[65],"leakage":[66],"significantly":[71],"decrease":[72],"power":[74,151,174],"dissipation.":[75],"The":[76,156,168],"structure":[77],"is":[78],"designed":[79],"so":[80],"that":[81],"relatively":[83],"long":[84],"mechanical":[85],"delay":[86,158,164],"does":[91],"not":[92],"result":[93],"performance":[95],"degradation.":[96],"Circuit":[97],"simulations":[98],"performed":[100],"using":[101],"VerilogA":[103],"model":[104],"relay.":[108],"Compared":[109],"65nm":[112],"when":[117],"10nm-gap":[118],"(pull-in":[121],"voltage":[122,126],"=":[123,127,131],"0.8V,":[124],"pull-out":[125],"0.2V,":[128],"on":[129],"resistance":[130],"1k\u03a9)":[132],"integrated,":[134],"hold":[135],"read":[137,163],"noise":[139],"margin":[140],"(SNM)":[141],"improve":[142],"by":[143,154,160,166],"~110%":[144],"~250%,":[146],"respectively.":[147],"In":[148],"addition,":[149],"dissipation":[152,175],"decreases":[153,159,165],"~85%.":[155],"write":[157],"~60%,":[161],"while":[162],"~10%.":[167],"advantages":[169],"SNM":[171],"expected":[177],"scaling.":[181]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2023,"cited_by_count":2},{"year":2021,"cited_by_count":4},{"year":2020,"cited_by_count":4},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":2},{"year":2017,"cited_by_count":3},{"year":2016,"cited_by_count":11},{"year":2015,"cited_by_count":8},{"year":2014,"cited_by_count":11},{"year":2013,"cited_by_count":8},{"year":2012,"cited_by_count":9}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}