{"id":"https://openalex.org/W2100890870","doi":"https://doi.org/10.1145/1629911.1629933","title":"Carbon nanotube circuits in the presence of carbon nanotube density variations","display_name":"Carbon nanotube circuits in the presence of carbon nanotube density variations","publication_year":2009,"publication_date":"2009-07-26","ids":{"openalex":"https://openalex.org/W2100890870","doi":"https://doi.org/10.1145/1629911.1629933","mag":"2100890870"},"language":"en","primary_location":{"id":"doi:10.1145/1629911.1629933","is_oa":false,"landing_page_url":"https://doi.org/10.1145/1629911.1629933","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the 46th Annual Design Automation Conference","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5023023644","display_name":"Jie Zhang","orcid":"https://orcid.org/0000-0001-7821-4808"},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Jie Zhang","raw_affiliation_strings":["Stanford University, Stanford, CA","Departments of Electrical Engineering and Computer Science, Stanford University, CA, USA"],"affiliations":[{"raw_affiliation_string":"Stanford University, Stanford, CA","institution_ids":["https://openalex.org/I97018004"]},{"raw_affiliation_string":"Departments of Electrical Engineering and Computer Science, Stanford University, CA, USA","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5037285672","display_name":"Nishant Patil","orcid":"https://orcid.org/0000-0001-6620-0038"},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Nishant Patil","raw_affiliation_strings":["Stanford University, Stanford, CA","Departments of Electrical Engineering and Computer Science, Stanford University, CA, USA"],"affiliations":[{"raw_affiliation_string":"Stanford University, Stanford, CA","institution_ids":["https://openalex.org/I97018004"]},{"raw_affiliation_string":"Departments of Electrical Engineering and Computer Science, Stanford University, CA, USA","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113534937","display_name":"Arash Hazeghi","orcid":null},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Arash Hazeghi","raw_affiliation_strings":["Stanford University, Stanford, CA","Departments of Electrical Engineering and Computer Science, Stanford University, CA, USA"],"affiliations":[{"raw_affiliation_string":"Stanford University, Stanford, CA","institution_ids":["https://openalex.org/I97018004"]},{"raw_affiliation_string":"Departments of Electrical Engineering and Computer Science, Stanford University, CA, USA","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5036312663","display_name":"Subhasish Mitra","orcid":"https://orcid.org/0000-0002-5572-5194"},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Subhasish Mitra","raw_affiliation_strings":["Stanford University, Stanford, CA","Departments of Electrical Engineering and Computer Science, Stanford University, CA, USA"],"affiliations":[{"raw_affiliation_string":"Stanford University, Stanford, CA","institution_ids":["https://openalex.org/I97018004"]},{"raw_affiliation_string":"Departments of Electrical Engineering and Computer Science, Stanford University, CA, USA","institution_ids":["https://openalex.org/I97018004"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5023023644"],"corresponding_institution_ids":["https://openalex.org/I97018004"],"apc_list":null,"apc_paid":null,"fwci":6.1036,"has_fulltext":false,"cited_by_count":86,"citation_normalized_percentile":{"value":0.97330465,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":94,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"71","last_page":"76"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10074","display_name":"Carbon Nanotubes in Composites","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10074","display_name":"Carbon Nanotubes in Composites","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9977999925613403,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":0.9948999881744385,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/carbon-nanotube","display_name":"Carbon nanotube","score":0.884211540222168},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.720920205116272},{"id":"https://openalex.org/keywords/carbon-nanotube-field-effect-transistor","display_name":"Carbon nanotube field-effect transistor","score":0.6839324235916138},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6524767279624939},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.562984049320221},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5307883024215698},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.4981870651245117},{"id":"https://openalex.org/keywords/noise-margin","display_name":"Noise margin","score":0.44046080112457275},{"id":"https://openalex.org/keywords/circuit-reliability","display_name":"Circuit reliability","score":0.4383726119995117},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.4299647808074951},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.4212256073951721},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3620482087135315},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.1408463418483734},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.1224290132522583},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.12140613794326782},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.07212811708450317},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.06244397163391113}],"concepts":[{"id":"https://openalex.org/C513720949","wikidata":"https://www.wikidata.org/wiki/Q1778729","display_name":"Carbon nanotube","level":2,"score":0.884211540222168},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.720920205116272},{"id":"https://openalex.org/C58916441","wikidata":"https://www.wikidata.org/wiki/Q1778563","display_name":"Carbon nanotube field-effect transistor","level":5,"score":0.6839324235916138},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6524767279624939},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.562984049320221},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5307883024215698},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.4981870651245117},{"id":"https://openalex.org/C179499742","wikidata":"https://www.wikidata.org/wiki/Q1324892","display_name":"Noise margin","level":4,"score":0.44046080112457275},{"id":"https://openalex.org/C2778309119","wikidata":"https://www.wikidata.org/wiki/Q5121614","display_name":"Circuit reliability","level":4,"score":0.4383726119995117},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.4299647808074951},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.4212256073951721},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3620482087135315},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.1408463418483734},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.1224290132522583},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.12140613794326782},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.07212811708450317},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.06244397163391113},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1145/1629911.1629933","is_oa":false,"landing_page_url":"https://doi.org/10.1145/1629911.1629933","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the 46th Annual Design Automation Conference","raw_type":"proceedings-article"},{"id":"pmh:oai:CiteSeerX.psu:10.1.1.460.6943","is_oa":false,"landing_page_url":"http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.460.6943","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"http://web.stanford.edu/group/rsg_csl/twiki/pub/Public/CntProjectPublications/CNT_DENSITYVAR_TR_1.0.pdf","raw_type":"text"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":25,"referenced_works":["https://openalex.org/W973491057","https://openalex.org/W1964189680","https://openalex.org/W1968487830","https://openalex.org/W1973628995","https://openalex.org/W1991561423","https://openalex.org/W2032324308","https://openalex.org/W2075966063","https://openalex.org/W2091844454","https://openalex.org/W2098194061","https://openalex.org/W2098290609","https://openalex.org/W2103491903","https://openalex.org/W2103727077","https://openalex.org/W2126564504","https://openalex.org/W2140288260","https://openalex.org/W2158955861","https://openalex.org/W2159568563","https://openalex.org/W2160788064","https://openalex.org/W2162476901","https://openalex.org/W2163874178","https://openalex.org/W2166294424","https://openalex.org/W2171229768","https://openalex.org/W2172161464","https://openalex.org/W2539132847","https://openalex.org/W2619400090","https://openalex.org/W4302853952"],"related_works":["https://openalex.org/W2547634696","https://openalex.org/W2570275273","https://openalex.org/W2317479535","https://openalex.org/W1579695216","https://openalex.org/W2134806353","https://openalex.org/W1976161475","https://openalex.org/W3124581103","https://openalex.org/W4380881976","https://openalex.org/W2146902916","https://openalex.org/W2040623373"],"abstract_inverted_index":{"Carbon":[0,33],"Nanotubes":[1],"(CNTs)":[2],"are":[3],"grown":[4],"using":[5],"chemical":[6],"synthesis.":[7],"As":[8],"a":[9],"result,":[10],"it":[11],"is":[12,53,66],"extremely":[13],"difficult":[14],"to":[15,68],"ensure":[16],"exact":[17],"positioning":[18],"and":[19,40,82,98],"uniform":[20],"density":[21,51],"of":[22,32,72,85,103,113],"CNTs.":[23],"Density":[24],"variations":[25,52,74,84],"in":[26,42,94],"CNT":[27,50,62,96],"growth":[28],"can":[29,106],"compromise":[30],"reliability":[31,102],"Nanotube":[34],"Field":[35],"Effect":[36],"Transistor":[37],"(CNFET)":[38],"circuits,":[39],"result":[41],"increased":[43],"delay":[44,83],"variations.":[45],"A":[46],"parameterized":[47],"model":[48,65],"for":[49],"presented":[54],"based":[55],"on":[56,75],"experimental":[57],"data":[58],"extracted":[59],"from":[60],"aligned":[61,95],"growth.":[63],"This":[64],"used":[67],"quantify":[69],"the":[70,101],"impact":[71],"such":[73,78,114],"design":[76],"metrics":[77],"as":[79],"noise":[80],"margin":[81],"CNFET":[86,104],"circuits.":[87],"Finally,":[88],"we":[89],"analyze":[90],"correlation":[91],"that":[92],"exists":[93],"growth,":[97],"demonstrate":[99],"how":[100],"circuits":[105],"be":[107],"significantly":[108],"improved":[109],"by":[110],"taking":[111],"advantage":[112],"correlation.":[115]},"counts_by_year":[{"year":2022,"cited_by_count":5},{"year":2021,"cited_by_count":6},{"year":2020,"cited_by_count":3},{"year":2019,"cited_by_count":2},{"year":2018,"cited_by_count":3},{"year":2017,"cited_by_count":3},{"year":2016,"cited_by_count":4},{"year":2015,"cited_by_count":8},{"year":2014,"cited_by_count":5},{"year":2013,"cited_by_count":8},{"year":2012,"cited_by_count":9}],"updated_date":"2026-04-04T16:13:02.066488","created_date":"2025-10-10T00:00:00"}