{"id":"https://openalex.org/W1982663454","doi":"https://doi.org/10.1145/1404371.1404407","title":"Encountering gate oxide breakdown with shadow transistors to increase reliability","display_name":"Encountering gate oxide breakdown with shadow transistors to increase reliability","publication_year":2008,"publication_date":"2008-09-01","ids":{"openalex":"https://openalex.org/W1982663454","doi":"https://doi.org/10.1145/1404371.1404407","mag":"1982663454"},"language":"en","primary_location":{"id":"doi:10.1145/1404371.1404407","is_oa":false,"landing_page_url":"https://doi.org/10.1145/1404371.1404407","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the 21st annual symposium on Integrated circuits and system design","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5073158292","display_name":"Claas Cornelius","orcid":null},"institutions":[{"id":"https://openalex.org/I4665924","display_name":"University of Rostock","ror":"https://ror.org/03zdwsf69","country_code":"DE","type":"education","lineage":["https://openalex.org/I4665924"]}],"countries":["DE"],"is_corresponding":true,"raw_author_name":"Claas Cornelius","raw_affiliation_strings":["University of Rostock, Rostock, Germany","University of Rostock, Rostock, Germany#TAB#"],"affiliations":[{"raw_affiliation_string":"University of Rostock, Rostock, Germany","institution_ids":["https://openalex.org/I4665924"]},{"raw_affiliation_string":"University of Rostock, Rostock, Germany#TAB#","institution_ids":["https://openalex.org/I4665924"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5056538809","display_name":"Frank Sill Torres","orcid":"https://orcid.org/0000-0002-4028-455X"},"institutions":[{"id":"https://openalex.org/I110200422","display_name":"Universidade Federal de Minas Gerais","ror":"https://ror.org/0176yjw32","country_code":"BR","type":"education","lineage":["https://openalex.org/I110200422"]}],"countries":["BR"],"is_corresponding":false,"raw_author_name":"Frank Sill","raw_affiliation_strings":["Federal University of Minas Gerais, Belo Horizonte, Brazil","Federal University of Minas Gerais, Belo Horizonte; Brazil"],"affiliations":[{"raw_affiliation_string":"Federal University of Minas Gerais, Belo Horizonte, Brazil","institution_ids":["https://openalex.org/I110200422"]},{"raw_affiliation_string":"Federal University of Minas Gerais, Belo Horizonte; Brazil","institution_ids":["https://openalex.org/I110200422"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5090602892","display_name":"Hagen S\u00e4mrow","orcid":null},"institutions":[{"id":"https://openalex.org/I4665924","display_name":"University of Rostock","ror":"https://ror.org/03zdwsf69","country_code":"DE","type":"education","lineage":["https://openalex.org/I4665924"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Hagen S\u00e4mrow","raw_affiliation_strings":["University of Rostock, Rostock, Germany","University of Rostock, Rostock, Germany#TAB#"],"affiliations":[{"raw_affiliation_string":"University of Rostock, Rostock, Germany","institution_ids":["https://openalex.org/I4665924"]},{"raw_affiliation_string":"University of Rostock, Rostock, Germany#TAB#","institution_ids":["https://openalex.org/I4665924"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5051594407","display_name":"Jakob Salzmann","orcid":null},"institutions":[{"id":"https://openalex.org/I4665924","display_name":"University of Rostock","ror":"https://ror.org/03zdwsf69","country_code":"DE","type":"education","lineage":["https://openalex.org/I4665924"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Jakob Salzmann","raw_affiliation_strings":["University of Rostock, Rostock, Germany","University of Rostock, Rostock, Germany#TAB#"],"affiliations":[{"raw_affiliation_string":"University of Rostock, Rostock, Germany","institution_ids":["https://openalex.org/I4665924"]},{"raw_affiliation_string":"University of Rostock, Rostock, Germany#TAB#","institution_ids":["https://openalex.org/I4665924"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103173327","display_name":"Dirk Timmermann","orcid":"https://orcid.org/0000-0001-9267-9695"},"institutions":[{"id":"https://openalex.org/I4665924","display_name":"University of Rostock","ror":"https://ror.org/03zdwsf69","country_code":"DE","type":"education","lineage":["https://openalex.org/I4665924"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Dirk Timmermann","raw_affiliation_strings":["University of Rostock, Rostock, Germany","University of Rostock, Rostock, Germany#TAB#"],"affiliations":[{"raw_affiliation_string":"University of Rostock, Rostock, Germany","institution_ids":["https://openalex.org/I4665924"]},{"raw_affiliation_string":"University of Rostock, Rostock, Germany#TAB#","institution_ids":["https://openalex.org/I4665924"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5031310744","display_name":"D.C. da Silva","orcid":"https://orcid.org/0000-0003-3954-338X"},"institutions":[{"id":"https://openalex.org/I110200422","display_name":"Universidade Federal de Minas Gerais","ror":"https://ror.org/0176yjw32","country_code":"BR","type":"education","lineage":["https://openalex.org/I110200422"]}],"countries":["BR"],"is_corresponding":false,"raw_author_name":"Di\u00f3genes da Silva","raw_affiliation_strings":["Federal University of Minas Gerais, Belo Horizonte, Brazil","Federal University of Minas Gerais, Belo Horizonte; Brazil"],"affiliations":[{"raw_affiliation_string":"Federal University of Minas Gerais, Belo Horizonte, Brazil","institution_ids":["https://openalex.org/I110200422"]},{"raw_affiliation_string":"Federal University of Minas Gerais, Belo Horizonte; Brazil","institution_ids":["https://openalex.org/I110200422"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":6,"corresponding_author_ids":["https://openalex.org/A5073158292"],"corresponding_institution_ids":["https://openalex.org/I4665924"],"apc_list":null,"apc_paid":null,"fwci":1.017,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.76902544,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"111","last_page":"116"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/time-dependent-gate-oxide-breakdown","display_name":"Time-dependent gate oxide breakdown","score":0.8770819902420044},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.7624372243881226},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.742489218711853},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.569628894329071},{"id":"https://openalex.org/keywords/shadow","display_name":"Shadow (psychology)","score":0.5513033866882324},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.5037831664085388},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4489705264568329},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4463205635547638},{"id":"https://openalex.org/keywords/dielectric-strength","display_name":"Dielectric strength","score":0.44546830654144287},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.43950018286705017},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.4150044322013855},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.37412500381469727},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.3547857999801636},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.32186955213546753},{"id":"https://openalex.org/keywords/gate-oxide","display_name":"Gate oxide","score":0.3092518448829651},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.29768604040145874},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.27998191118240356},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.25540095567703247},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.10407426953315735}],"concepts":[{"id":"https://openalex.org/C152909973","wikidata":"https://www.wikidata.org/wiki/Q7804816","display_name":"Time-dependent gate oxide breakdown","level":5,"score":0.8770819902420044},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.7624372243881226},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.742489218711853},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.569628894329071},{"id":"https://openalex.org/C117797892","wikidata":"https://www.wikidata.org/wiki/Q286363","display_name":"Shadow (psychology)","level":2,"score":0.5513033866882324},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.5037831664085388},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4489705264568329},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4463205635547638},{"id":"https://openalex.org/C70401718","wikidata":"https://www.wikidata.org/wiki/Q343241","display_name":"Dielectric strength","level":3,"score":0.44546830654144287},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.43950018286705017},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.4150044322013855},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.37412500381469727},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.3547857999801636},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.32186955213546753},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.3092518448829651},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.29768604040145874},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.27998191118240356},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.25540095567703247},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.10407426953315735},{"id":"https://openalex.org/C15744967","wikidata":"https://www.wikidata.org/wiki/Q9418","display_name":"Psychology","level":0,"score":0.0},{"id":"https://openalex.org/C542102704","wikidata":"https://www.wikidata.org/wiki/Q183257","display_name":"Psychotherapist","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1145/1404371.1404407","is_oa":false,"landing_page_url":"https://doi.org/10.1145/1404371.1404407","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the 21st annual symposium on Integrated circuits and system design","raw_type":"proceedings-article"},{"id":"pmh:oai:CiteSeerX.psu:10.1.1.183.4209","is_oa":false,"landing_page_url":"http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.183.4209","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"http://www.imd.uni-rostock.de/veroeff/SBCCI%2CGramado2008%2CCornelius.pdf","raw_type":"text"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.8100000023841858}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":23,"referenced_works":["https://openalex.org/W48128203","https://openalex.org/W141121412","https://openalex.org/W312756296","https://openalex.org/W1607289384","https://openalex.org/W1641755856","https://openalex.org/W1712958038","https://openalex.org/W1973039798","https://openalex.org/W1990911977","https://openalex.org/W1992580876","https://openalex.org/W2070588354","https://openalex.org/W2104086123","https://openalex.org/W2112018824","https://openalex.org/W2112488383","https://openalex.org/W2115554176","https://openalex.org/W2120937992","https://openalex.org/W2137655221","https://openalex.org/W2148327955","https://openalex.org/W2150526221","https://openalex.org/W2162465831","https://openalex.org/W2167163943","https://openalex.org/W2171186719","https://openalex.org/W6605853022","https://openalex.org/W6684620672"],"related_works":["https://openalex.org/W2099624314","https://openalex.org/W3160961382","https://openalex.org/W2779258936","https://openalex.org/W2546473172","https://openalex.org/W2392567938","https://openalex.org/W3107547302","https://openalex.org/W2373803844","https://openalex.org/W2243340867","https://openalex.org/W2210936481","https://openalex.org/W1199668799"],"abstract_inverted_index":{"Device":[0],"scaling":[1],"has":[2],"enabled":[3],"continuous":[4],"performance":[5],"increase":[6],"of":[7,21,133,159,164],"integrated":[8],"circuits.":[9],"However,":[10],"severe":[11],"reliability":[12,42,78],"and":[13,26,50,136,169],"yield":[14],"concerns":[15],"are":[16,106],"arising":[17],"against":[18],"the":[19,93,109,123,138,154,162],"background":[20],"nanotechnology.":[22],"Traditionally,":[23],"most":[24,96],"causes":[25],"countermeasures":[27],"were":[28,145],"solely":[29],"considered":[30],"manufacturing":[31],"issues,":[32],"but":[33],"lately,":[34],"we":[35,69,87,114,127],"have":[36],"seen":[37],"a":[38,131],"shift":[39],"towards":[40],"operational":[41],"issues.":[43],"Though,":[44],"besides":[45],"intense":[46],"research":[47],"on":[48,146],"soft-errors":[49],"system-level":[51],"approaches":[52],"very":[53],"little":[54],"effort":[55],"is":[56],"put":[57],"into":[58],"low-level":[59],"design":[60],"solutions":[61],"in":[62,157],"order":[63],"to":[64,98,153],"enhance":[65],"lifetime":[66],"reliability.":[67],"Hence,":[68],"demonstrate":[70],"that":[71],"redundant":[72,101,124],"transistor":[73],"insertion":[74],"does":[75],"improve":[76],"system":[77],"significantly":[79],"as":[80],"regards":[81],"Time-Dependent":[82],"Dielectric":[83],"Breakdown":[84],"(TDDB).":[85],"Furthermore,":[86],"introduce":[88],"an":[89],"algorithm":[90],"which":[91],"identifies":[92],"transistors":[94,102],"being":[95],"vulnerable":[97],"TDDB.":[99],"Subsequently,":[100],"(called":[103],"shadow":[104],"transistors)":[105],"inserted":[107],"at":[108,161],"previously":[110],"identified":[111],"instances.":[112],"Lastly,":[113],"argue":[115],"for":[116,122,130],"applying":[117],"high":[118],"threshold":[119],"voltage":[120],"devices":[121],"transistors.":[125],"Finally,":[126],"present":[128],"results":[129],"set":[132],"benchmark":[134],"circuits":[135],"prove":[137],"combined":[139],"approach":[140],"successful.":[141],"The":[142],"enhanced":[143],"designs":[144,156],"average":[147],"41.8":[148],"%":[149],"more":[150],"reliable":[151],"compared":[152],"initial":[155],"respect":[158],"TDDB":[160],"price":[163],"moderately":[165],"increased":[166],"power":[167],"consumption":[168],"delay.":[170]},"counts_by_year":[{"year":2019,"cited_by_count":1}],"updated_date":"2026-04-05T17:49:38.594831","created_date":"2025-10-10T00:00:00"}