{"id":"https://openalex.org/W2097000220","doi":"https://doi.org/10.1145/1366110.1366185","title":"A lithography-friendly structured ASIC design approach","display_name":"A lithography-friendly structured ASIC design approach","publication_year":2008,"publication_date":"2008-05-04","ids":{"openalex":"https://openalex.org/W2097000220","doi":"https://doi.org/10.1145/1366110.1366185","mag":"2097000220"},"language":"en","primary_location":{"id":"doi:10.1145/1366110.1366185","is_oa":false,"landing_page_url":"https://doi.org/10.1145/1366110.1366185","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the 18th ACM Great Lakes symposium on VLSI","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5079726478","display_name":"Salman Gopalani","orcid":null},"institutions":[{"id":"https://openalex.org/I4210124763","display_name":"National Instruments (United States)","ror":"https://ror.org/026exqw73","country_code":"US","type":"company","lineage":["https://openalex.org/I4210117810","https://openalex.org/I4210124763"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Salman Gopalani","raw_affiliation_strings":["National Instruments, Austin, TX, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Instruments, Austin, TX, USA","institution_ids":["https://openalex.org/I4210124763"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102793889","display_name":"Rajesh Garg","orcid":null},"institutions":[{"id":"https://openalex.org/I91045830","display_name":"Texas A&M University","ror":"https://ror.org/01f5ytq51","country_code":"US","type":"education","lineage":["https://openalex.org/I91045830"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Rajesh Garg","raw_affiliation_strings":["Texas A&M University, College Station, TX, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Texas A&M University, College Station, TX, USA","institution_ids":["https://openalex.org/I91045830"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5021685706","display_name":"Sunil P. Khatri","orcid":"https://orcid.org/0000-0001-7134-9929"},"institutions":[{"id":"https://openalex.org/I91045830","display_name":"Texas A&M University","ror":"https://ror.org/01f5ytq51","country_code":"US","type":"education","lineage":["https://openalex.org/I91045830"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Sunil P. Khatri","raw_affiliation_strings":["Texas A&M University, College Station, TX, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Texas A&M University, College Station, TX, USA","institution_ids":["https://openalex.org/I91045830"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5109229445","display_name":"Mosong Cheng","orcid":null},"institutions":[{"id":"https://openalex.org/I91045830","display_name":"Texas A&M University","ror":"https://ror.org/01f5ytq51","country_code":"US","type":"education","lineage":["https://openalex.org/I91045830"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Mosong Cheng","raw_affiliation_strings":["Texas A&M University, College Station, TX, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Texas A&M University, College Station, TX, USA","institution_ids":["https://openalex.org/I91045830"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":3.321,"has_fulltext":false,"cited_by_count":13,"citation_normalized_percentile":{"value":0.92127338,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"315","last_page":"320"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11338","display_name":"Advancements in Photolithography Techniques","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11338","display_name":"Advancements in Photolithography Techniques","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11522","display_name":"VLSI and FPGA Design Techniques","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/application-specific-integrated-circuit","display_name":"Application-specific integrated circuit","score":0.8057093620300293},{"id":"https://openalex.org/keywords/lithography","display_name":"Lithography","score":0.7309580445289612},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5098801851272583},{"id":"https://openalex.org/keywords/next-generation-lithography","display_name":"Next-generation lithography","score":0.42623740434646606},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.3047240078449249},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.29972395300865173},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.27979162335395813},{"id":"https://openalex.org/keywords/electron-beam-lithography","display_name":"Electron-beam lithography","score":0.1997736692428589},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.1699816882610321},{"id":"https://openalex.org/keywords/resist","display_name":"Resist","score":0.14512860774993896}],"concepts":[{"id":"https://openalex.org/C77390884","wikidata":"https://www.wikidata.org/wiki/Q217302","display_name":"Application-specific integrated circuit","level":2,"score":0.8057093620300293},{"id":"https://openalex.org/C204223013","wikidata":"https://www.wikidata.org/wiki/Q133036","display_name":"Lithography","level":2,"score":0.7309580445289612},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5098801851272583},{"id":"https://openalex.org/C163581340","wikidata":"https://www.wikidata.org/wiki/Q1983848","display_name":"Next-generation lithography","level":5,"score":0.42623740434646606},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.3047240078449249},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.29972395300865173},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.27979162335395813},{"id":"https://openalex.org/C200274948","wikidata":"https://www.wikidata.org/wiki/Q256845","display_name":"Electron-beam lithography","level":4,"score":0.1997736692428589},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.1699816882610321},{"id":"https://openalex.org/C53524968","wikidata":"https://www.wikidata.org/wiki/Q7315582","display_name":"Resist","level":3,"score":0.14512860774993896},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1145/1366110.1366185","is_oa":false,"landing_page_url":"https://doi.org/10.1145/1366110.1366185","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the 18th ACM Great Lakes symposium on VLSI","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":23,"referenced_works":["https://openalex.org/W32726193","https://openalex.org/W1492192095","https://openalex.org/W1511688816","https://openalex.org/W1570969114","https://openalex.org/W1657993870","https://openalex.org/W2069106938","https://openalex.org/W2115420102","https://openalex.org/W2115731142","https://openalex.org/W2120116751","https://openalex.org/W2123815308","https://openalex.org/W2134849712","https://openalex.org/W2136328167","https://openalex.org/W2139569078","https://openalex.org/W2141429499","https://openalex.org/W2143518405","https://openalex.org/W2154941994","https://openalex.org/W2157024459","https://openalex.org/W2172117646","https://openalex.org/W3103339143","https://openalex.org/W3172772885","https://openalex.org/W4234513063","https://openalex.org/W6667652645","https://openalex.org/W6676989908"],"related_works":["https://openalex.org/W2363991779","https://openalex.org/W2115795789","https://openalex.org/W2379570117","https://openalex.org/W1946880670","https://openalex.org/W2028711229","https://openalex.org/W69224963","https://openalex.org/W2503993276","https://openalex.org/W2025251804","https://openalex.org/W1966972295","https://openalex.org/W2122563195"],"abstract_inverted_index":{"Integrated":[0],"circuit":[1,39,53,77],"manufacturing":[2,80],"costs":[3],"are":[4,30],"increasing":[5],"with":[6,41,121],"decreasing":[7],"device":[8],"feature":[9],"sizes,":[10],"due":[11,25],"to":[12,26,36,48,95,160,224],"significant":[13],"increases":[14],"in":[15,109],"mask":[16],"costs.":[17],"At":[18],"the":[19,38,91,96,115,122,169,181,187,196,212,215,225],"same":[20,92],"time,":[21],"systematic":[22,111],"processing":[23],"variations":[24],"optical":[27],"proximity":[28],"effects":[29],"also":[31,107,176],"increasing,":[32],"making":[33],"it":[34],"harder":[35],"predict":[37],"behavior":[40],"fidelity.":[42],"Therefore,":[43],"there":[44],"is":[45,166],"a":[46,60,143,154],"need":[47],"implement":[49],"designs":[50,88,188],"using":[51,130,190],"regular":[52,100],"structures.":[54],"In":[55],"this":[56],"paper,":[57],"we":[58],"present":[59],"new":[61],"structured":[62,172],"ASIC":[63,123,162,173,197,226],"approach":[64,124,141,192,207],"which":[65],"utilizes":[66],"an":[67,148,161],"array":[68,75,106,120],"of":[69,103,117,146,151,157,180,186],"2-input":[70],"NAND":[71],"gates.":[72],"Our":[73],"NAND2":[74,105,119],"based":[76],"implementation":[78],"reduces":[79],"costs,":[81],"and":[82,153,183,214,220],"design":[83,163,198],"turn-around":[84],"times":[85],"because":[86],"different":[87],"can":[89],"share":[90],"masks":[93,185],"up":[94],"poly":[97,182,213],"layer.":[98],"The":[99,133],"layout":[101],"structure":[102],"our":[104,118,140,191,206],"helps":[108],"reducing":[110],"variations.":[112],"We":[113,175],"compared":[114,159,223],"performance":[116],"by":[125,218],"implementing":[126],"several":[127],"benchmark":[128],"circuits":[129],"both":[131],"methods.":[132],"experimental":[134],"results":[135,203],"demonstrate":[136,204],"that":[137,205],"on":[138,211],"average,":[139],"has":[142,208],"delay":[144],"penalty":[145,150],"40%,":[147],"area":[149],"12%,":[152],"power":[155],"increase":[156],"7%,":[158],"approach.":[164,199,227],"This":[165],"better":[167],"than":[168],"previously":[170],"reported":[171],"approaches.":[174],"performed":[177],"lithographical":[178,201],"simulations":[179],"metal":[184],"implemented":[189],"as":[193,195],"well":[194],"These":[200],"simulation":[202],"lower":[209],"errors":[210],"Metal1":[216],"layers":[217],"7%":[219],"24%":[221],"respectively,":[222]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2014,"cited_by_count":1},{"year":2013,"cited_by_count":2},{"year":2012,"cited_by_count":2}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}