{"id":"https://openalex.org/W2092968117","doi":"https://doi.org/10.1142/s0218126695000060","title":"STATIC CHARACTERISTICS OF MOS-CONTROLLED THYRISTORS \u2014 ANALYSIS, SIMULATION, AND EXPERIMENTAL RESULTS","display_name":"STATIC CHARACTERISTICS OF MOS-CONTROLLED THYRISTORS \u2014 ANALYSIS, SIMULATION, AND EXPERIMENTAL RESULTS","publication_year":1995,"publication_date":"1995-03-01","ids":{"openalex":"https://openalex.org/W2092968117","doi":"https://doi.org/10.1142/s0218126695000060","mag":"2092968117"},"language":"en","primary_location":{"id":"doi:10.1142/s0218126695000060","is_oa":false,"landing_page_url":"https://doi.org/10.1142/s0218126695000060","pdf_url":null,"source":{"id":"https://openalex.org/S167602672","display_name":"Journal of Circuits Systems and Computers","issn_l":"0218-1266","issn":["0218-1266","1793-6454"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319815","host_organization_name":"World Scientific","host_organization_lineage":["https://openalex.org/P4310319815"],"host_organization_lineage_names":["World Scientific"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Circuits, Systems and Computers","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5036917143","display_name":"Dariusz Czarkowski","orcid":"https://orcid.org/0000-0003-3706-2830"},"institutions":[{"id":"https://openalex.org/I33213144","display_name":"University of Florida","ror":"https://ror.org/02y3ad647","country_code":"US","type":"education","lineage":["https://openalex.org/I33213144"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"DARIUSZ CZARKOWSKI","raw_affiliation_strings":["University of Florida, Department of Electrical Engineering, Gainesville, FL 32611, U.S.A"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Florida, Department of Electrical Engineering, Gainesville, FL 32611, U.S.A","institution_ids":["https://openalex.org/I33213144"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5064938602","display_name":"Marian K. Kazimierczuk","orcid":"https://orcid.org/0000-0003-4275-0507"},"institutions":[{"id":"https://openalex.org/I19648265","display_name":"Wright State University","ror":"https://ror.org/04qk6pt94","country_code":"US","type":"education","lineage":["https://openalex.org/I19648265"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"MARIAN K. KAZIMIERCZUK","raw_affiliation_strings":["Wright State University, Department of Electrical Engineering, Dayton, OH 45435, U.S.A"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Wright State University, Department of Electrical Engineering, Dayton, OH 45435, U.S.A","institution_ids":["https://openalex.org/I19648265"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.19472896,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":"05","issue":"01","first_page":"65","last_page":"80"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9986000061035156,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":0.9973999857902527,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/thyristor","display_name":"Thyristor","score":0.8145958781242371},{"id":"https://openalex.org/keywords/saturation-current","display_name":"Saturation current","score":0.7147831916809082},{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.6154614686965942},{"id":"https://openalex.org/keywords/saturation","display_name":"Saturation (graph theory)","score":0.6127759218215942},{"id":"https://openalex.org/keywords/spice","display_name":"Spice","score":0.6079102754592896},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5841386318206787},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.49959278106689453},{"id":"https://openalex.org/keywords/voltage-drop","display_name":"Voltage drop","score":0.4897015392780304},{"id":"https://openalex.org/keywords/cathode","display_name":"Cathode","score":0.487356960773468},{"id":"https://openalex.org/keywords/bipolar-junction-transistor","display_name":"Bipolar junction transistor","score":0.47535440325737},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.46184247732162476},{"id":"https://openalex.org/keywords/equivalent-circuit","display_name":"Equivalent circuit","score":0.4459015727043152},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4339807629585266},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.41273564100265503},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.401824414730072},{"id":"https://openalex.org/keywords/computational-physics","display_name":"Computational physics","score":0.3832731246948242},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.17076537013053894},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.1425655484199524}],"concepts":[{"id":"https://openalex.org/C121922863","wikidata":"https://www.wikidata.org/wiki/Q180805","display_name":"Thyristor","level":3,"score":0.8145958781242371},{"id":"https://openalex.org/C155891486","wikidata":"https://www.wikidata.org/wiki/Q3694418","display_name":"Saturation current","level":3,"score":0.7147831916809082},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.6154614686965942},{"id":"https://openalex.org/C9930424","wikidata":"https://www.wikidata.org/wiki/Q7426587","display_name":"Saturation (graph theory)","level":2,"score":0.6127759218215942},{"id":"https://openalex.org/C2780077345","wikidata":"https://www.wikidata.org/wiki/Q16891888","display_name":"Spice","level":2,"score":0.6079102754592896},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5841386318206787},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.49959278106689453},{"id":"https://openalex.org/C82178898","wikidata":"https://www.wikidata.org/wiki/Q166839","display_name":"Voltage drop","level":3,"score":0.4897015392780304},{"id":"https://openalex.org/C49110097","wikidata":"https://www.wikidata.org/wiki/Q175233","display_name":"Cathode","level":2,"score":0.487356960773468},{"id":"https://openalex.org/C23061349","wikidata":"https://www.wikidata.org/wiki/Q188946","display_name":"Bipolar junction transistor","level":4,"score":0.47535440325737},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.46184247732162476},{"id":"https://openalex.org/C23572009","wikidata":"https://www.wikidata.org/wiki/Q964981","display_name":"Equivalent circuit","level":3,"score":0.4459015727043152},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4339807629585266},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.41273564100265503},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.401824414730072},{"id":"https://openalex.org/C30475298","wikidata":"https://www.wikidata.org/wiki/Q909554","display_name":"Computational physics","level":1,"score":0.3832731246948242},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.17076537013053894},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.1425655484199524},{"id":"https://openalex.org/C114614502","wikidata":"https://www.wikidata.org/wiki/Q76592","display_name":"Combinatorics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1142/s0218126695000060","is_oa":false,"landing_page_url":"https://doi.org/10.1142/s0218126695000060","pdf_url":null,"source":{"id":"https://openalex.org/S167602672","display_name":"Journal of Circuits Systems and Computers","issn_l":"0218-1266","issn":["0218-1266","1793-6454"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319815","host_organization_name":"World Scientific","host_organization_lineage":["https://openalex.org/P4310319815"],"host_organization_lineage_names":["World Scientific"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Circuits, Systems and Computers","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.8700000047683716}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2798845339","https://openalex.org/W2912949236","https://openalex.org/W1545891137","https://openalex.org/W1509712401","https://openalex.org/W2158893791","https://openalex.org/W2021786683","https://openalex.org/W1845175674","https://openalex.org/W2903708848","https://openalex.org/W2133435206","https://openalex.org/W2912032346"],"abstract_inverted_index":{"An":[0],"equation":[1,39],"for":[2,32,44,163],"the":[3,24,52,59,63,70,80,95,105,108,111,115],"i":[4,117,128],"K":[5,118,129],"-v":[6,119,130],"AK":[7,120,131],"static":[8],"forward":[9,64],"characteristic":[10],"of":[11,23,51,57,69,76,90,107,148,154],"an":[12],"MOS-controlled":[13],"thyristor":[14],"(MCT)":[15],"is":[16,30,40,54],"derived":[17],"using":[18,101],"a":[19,55,145,152],"four-transistor":[20],"equivalent":[21,48,82,97],"model":[22,29,98],"device.":[25],"The":[26,38,47,124,137],"Ebers\u2013Moll":[27],"large-signal":[28],"used":[31],"n-p-n":[33,71],"and":[34,62,65,72,88,126,151],"p-n-p":[35,73],"bipolar":[36],"transistors.":[37,74],"similar":[41],"to":[42,103],"that":[43,93],"forward-biased":[45,112],"diodes.":[46],"saturation":[49,60,83],"current":[50,67,84,147],"MCT":[53,81,96],"function":[56],"both":[58],"currents":[61,89],"reverse":[66],"gains":[68],"Effects":[75],"these":[77],"parameters":[78],"on":[79],"are":[85,99,122,158],"investigated.":[86],"Voltages":[87],"all":[91],"transistors":[92],"form":[94],"simulated":[100],"SPICE":[102],"explain":[104],"behavior":[106],"device":[109],"in":[110,134],"region.":[113],"Finally,":[114],"experimental":[116],"characteristics":[121,132],"presented.":[123],"calculated":[125],"measured":[127,138],"were":[133],"good":[135],"agreement.":[136],"ON-voltage":[139],"drop":[140],"was":[141],"1.6":[142],"V":[143],"at":[144],"cathode":[146],"200":[149],"A":[150],"temperature":[153],"300":[155],"K.":[156],"MCTs":[157],"especially":[159],"useful":[160],"power":[161],"devices":[162],"electric":[164],"car":[165],"applications.":[166]},"counts_by_year":[{"year":2013,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}