{"id":"https://openalex.org/W4403503639","doi":"https://doi.org/10.1142/s0218126625501257","title":"Comparative Analysis of AlN/\u03b2-Ga<sub>2</sub>O<sub>3</sub> and MgZnO/CdZnO Gate All Around Field Effect Transistors (GAA-FETs) for Analog/RF Applications","display_name":"Comparative Analysis of AlN/\u03b2-Ga<sub>2</sub>O<sub>3</sub> and MgZnO/CdZnO Gate All Around Field Effect Transistors (GAA-FETs) for Analog/RF Applications","publication_year":2024,"publication_date":"2024-10-18","ids":{"openalex":"https://openalex.org/W4403503639","doi":"https://doi.org/10.1142/s0218126625501257"},"language":"en","primary_location":{"id":"doi:10.1142/s0218126625501257","is_oa":false,"landing_page_url":"https://doi.org/10.1142/s0218126625501257","pdf_url":null,"source":{"id":"https://openalex.org/S167602672","display_name":"Journal of Circuits Systems and Computers","issn_l":"0218-1266","issn":["0218-1266","1793-6454"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319815","host_organization_name":"World Scientific","host_organization_lineage":["https://openalex.org/P4310319815"],"host_organization_lineage_names":["World Scientific"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Circuits, Systems and Computers","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5088337404","display_name":"Yogesh Kumar Verma","orcid":"https://orcid.org/0000-0003-4145-7202"},"institutions":[{"id":"https://openalex.org/I110360157","display_name":"Lovely Professional University","ror":"https://ror.org/00et6q107","country_code":"IN","type":"education","lineage":["https://openalex.org/I110360157"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Yogesh Kumar Verma","raw_affiliation_strings":["School of Electronics and Electrical Engineering, Lovely Professional University, Jalandhar, Punjab 144411, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electronics and Electrical Engineering, Lovely Professional University, Jalandhar, Punjab 144411, India","institution_ids":["https://openalex.org/I110360157"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5000974773","display_name":"Varun Mishra","orcid":"https://orcid.org/0000-0002-9264-9338"},"institutions":[{"id":"https://openalex.org/I191366470","display_name":"ITM University","ror":"https://ror.org/004pc5924","country_code":"IN","type":"education","lineage":["https://openalex.org/I191366470"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Varun Mishra","raw_affiliation_strings":["Department of Electronics Engineering, Madhav Institute of Technology and Science (Deemed University), Gwalior, Madhya Pradesh 474005, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronics Engineering, Madhav Institute of Technology and Science (Deemed University), Gwalior, Madhya Pradesh 474005, India","institution_ids":["https://openalex.org/I191366470"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5021153739","display_name":"Manoj Singh Adhikari","orcid":"https://orcid.org/0000-0001-7645-658X"},"institutions":[{"id":"https://openalex.org/I110360157","display_name":"Lovely Professional University","ror":"https://ror.org/00et6q107","country_code":"IN","type":"education","lineage":["https://openalex.org/I110360157"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Manoj Singh Adhikari","raw_affiliation_strings":["School of Electronics and Electrical Engineering, Lovely Professional University, Jalandhar, Punjab 144411, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electronics and Electrical Engineering, Lovely Professional University, Jalandhar, Punjab 144411, India","institution_ids":["https://openalex.org/I110360157"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5090422312","display_name":"Suman Lata Tripathi","orcid":"https://orcid.org/0000-0002-1684-8204"},"institutions":[{"id":"https://openalex.org/I110360157","display_name":"Lovely Professional University","ror":"https://ror.org/00et6q107","country_code":"IN","type":"education","lineage":["https://openalex.org/I110360157"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Suman Lata Tripathi","raw_affiliation_strings":["School of Electronics and Electrical Engineering, Lovely Professional University, Jalandhar, Punjab 144411, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electronics and Electrical Engineering, Lovely Professional University, Jalandhar, Punjab 144411, India","institution_ids":["https://openalex.org/I110360157"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5028498726","display_name":"Santosh Kumar Gupta","orcid":"https://orcid.org/0000-0003-4235-9065"},"institutions":[{"id":"https://openalex.org/I152869788","display_name":"Motilal Nehru National Institute of Technology","ror":"https://ror.org/04dp7tp96","country_code":"IN","type":"education","lineage":["https://openalex.org/I152869788"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Santosh Kumar Gupta","raw_affiliation_strings":["Department of Electronics and Communication Engineering, Motilal Nehru National Institute of Technology, Allahabad, Prayagraj, UP 211004, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronics and Communication Engineering, Motilal Nehru National Institute of Technology, Allahabad, Prayagraj, UP 211004, India","institution_ids":["https://openalex.org/I152869788"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0997,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.31819725,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":91,"max":95},"biblio":{"volume":"34","issue":"05","first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9988999962806702,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9690999984741211,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6610864400863647},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.6601413488388062},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6472869515419006},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5822676420211792},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3717723488807678},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1647476851940155},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.0997706949710846}],"concepts":[{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6610864400863647},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.6601413488388062},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6472869515419006},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5822676420211792},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3717723488807678},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1647476851940155},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0997706949710846}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1142/s0218126625501257","is_oa":false,"landing_page_url":"https://doi.org/10.1142/s0218126625501257","pdf_url":null,"source":{"id":"https://openalex.org/S167602672","display_name":"Journal of Circuits Systems and Computers","issn_l":"0218-1266","issn":["0218-1266","1793-6454"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319815","host_organization_name":"World Scientific","host_organization_lineage":["https://openalex.org/P4310319815"],"host_organization_lineage_names":["World Scientific"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Circuits, Systems and Computers","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.5799999833106995,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":29,"referenced_works":["https://openalex.org/W1497495782","https://openalex.org/W2020431932","https://openalex.org/W2033591438","https://openalex.org/W2070837727","https://openalex.org/W2099961602","https://openalex.org/W2179274921","https://openalex.org/W2259626724","https://openalex.org/W2280783756","https://openalex.org/W2321168704","https://openalex.org/W2339133292","https://openalex.org/W2406809365","https://openalex.org/W2462599028","https://openalex.org/W2529157282","https://openalex.org/W2551166540","https://openalex.org/W2556340064","https://openalex.org/W2765857684","https://openalex.org/W2790986675","https://openalex.org/W2804755657","https://openalex.org/W2805786765","https://openalex.org/W2912744753","https://openalex.org/W2944849135","https://openalex.org/W2987401534","https://openalex.org/W3022845458","https://openalex.org/W3035605709","https://openalex.org/W3080769621","https://openalex.org/W3135008586","https://openalex.org/W3157608150","https://openalex.org/W3171413849","https://openalex.org/W4387435823"],"related_works":["https://openalex.org/W2899084033","https://openalex.org/W2748952813","https://openalex.org/W2016187641","https://openalex.org/W2805339068","https://openalex.org/W4246450666","https://openalex.org/W2072424359","https://openalex.org/W2061674058","https://openalex.org/W2750055590","https://openalex.org/W1990516236","https://openalex.org/W1976012112"],"abstract_inverted_index":{"In":[0],"this":[1],"work,":[2],"a":[3,235,248],"3-D":[4],"model":[5],"is":[6,33,65,118,160,223],"presented":[7],"for":[8,18,41,62,77,115,137,199,251],"the":[9,36,54,151,153,226],"comparative":[10],"analysis":[11],"of":[12,15,44,57,94,139,167,172,238],"different":[13,42],"Figures":[14],"merit":[16],"(FOM)":[17],"MgZnO/CdZnO":[19,242],"and":[20,50,83,96,107,134,169,183,194,205],"AlN/Ga":[21],"2":[22,69,103,125,155,217,230],"O":[23,70,126,156,218,231],"3":[24,71,106,113,127,157,188,219,232],"Gate":[25],"All":[26],"Around":[27],"Field":[28],"Effect":[29],"Transistor":[30],"(GAA-FET).":[31],"It":[32,222],"noticed":[34,119,224],"within":[35],"analyzed":[37,161],"device":[38],"geometries":[39],"that":[40,225],"values":[43],"channel":[45,51],"length":[46],"(CL),":[47],"temperature":[48],"(T)":[49],"height":[52],"(H);":[53],"peak":[55,92,165],"magnitude":[56,93,166,237],"transconductance":[58],"([Formula:":[59],"see":[60,81,85,89,144,148,174,178,181,196,203,207,211,228],"text])":[61],"ZnO-based":[63,116],"GAA-FET":[64,73,117,129,159,233],"higher":[66,122],"than":[67,123,241],"Ga":[68,124,154,216],"-based":[72,128,158],"relatively":[74,130,190],"by":[75,131,191],"0.996":[76],"CL":[78,138,200],"=":[79,87,146,201,209],"20[Formula:":[80,202],"text]nm":[82,204],"[Formula:":[84,143,173,177,180,206],"text]":[86,145,182,208],"1[Formula:":[88,147,210],"text]V.":[90,149],"The":[91],"second":[95],"third-order":[97,108,184],"voltage":[98],"intercept":[99,109],"points,":[100],"i.e.,":[101,176],"VIP":[102,105],",":[104],"input":[110],"power":[111],"(IIP":[112],")":[114,189],"to":[120,162,215],"be":[121],"0.89,":[132],"0.59":[133],"0.80,":[135],"respectively,":[136,198],"30":[140],"nm":[141],"at":[142],"On":[150],"contrary,":[152],"exhibit":[163],"lower":[164,236],"first":[168],"second-order":[170],"derivatives":[171],"text],":[175,179],"intermodulation":[185],"distortion":[186],"(IMD":[187],"0.94,":[192],"0.66":[193],"3.59[Formula:":[195],"text]dB,":[197],"text]V":[212],"as":[213,247],"compared":[214],"based":[220],"GAA-FET.":[221],"AlN/[Formula:":[227],"text]-Ga":[229],"provides":[234],"output":[239],"conductance":[240],"GAA-FET,":[243],"thus":[244],"highlighting":[245],"it":[246],"potential":[249],"contender":[250],"analog":[252],"circuit":[253],"applications.":[254]},"counts_by_year":[{"year":2025,"cited_by_count":1}],"updated_date":"2026-05-21T06:26:12.895304","created_date":"2025-10-10T00:00:00"}