{"id":"https://openalex.org/W4391053362","doi":"https://doi.org/10.1142/s0218126624502128","title":"Mole Fraction and Device Reliability Analysis of Vertical-Tunneling-Attributed Dual-Material Double-Gate Heterojunction-TFET with Si0.7Ge0.3 Source Region at Device and Circuit Level","display_name":"Mole Fraction and Device Reliability Analysis of Vertical-Tunneling-Attributed Dual-Material Double-Gate Heterojunction-TFET with Si0.7Ge0.3 Source Region at Device and Circuit Level","publication_year":2024,"publication_date":"2024-01-20","ids":{"openalex":"https://openalex.org/W4391053362","doi":"https://doi.org/10.1142/s0218126624502128"},"language":"en","primary_location":{"id":"doi:10.1142/s0218126624502128","is_oa":false,"landing_page_url":"https://doi.org/10.1142/s0218126624502128","pdf_url":null,"source":{"id":"https://openalex.org/S167602672","display_name":"Journal of Circuits Systems and Computers","issn_l":"0218-1266","issn":["0218-1266","1793-6454"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319815","host_organization_name":"World Scientific","host_organization_lineage":["https://openalex.org/P4310319815"],"host_organization_lineage_names":["World Scientific"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Circuits, Systems and Computers","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5045532237","display_name":"Km. Sucheta Singh","orcid":"https://orcid.org/0000-0003-0093-4535"},"institutions":[{"id":"https://openalex.org/I74885063","display_name":"Sharda University","ror":"https://ror.org/03b6ffh07","country_code":"IN","type":"education","lineage":["https://openalex.org/I74885063"]}],"countries":["IN"],"is_corresponding":true,"raw_author_name":"Km. Sucheta Singh","raw_affiliation_strings":["Sharda University, Greater Noida, U.P., India"],"raw_orcid":"https://orcid.org/0000-0003-0093-4535","affiliations":[{"raw_affiliation_string":"Sharda University, Greater Noida, U.P., India","institution_ids":["https://openalex.org/I74885063"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5034989027","display_name":"Satyendra Kumar","orcid":"https://orcid.org/0000-0001-8545-2505"},"institutions":[{"id":"https://openalex.org/I154970844","display_name":"Jaypee Institute of Information Technology","ror":"https://ror.org/05sttyy11","country_code":"IN","type":"education","lineage":["https://openalex.org/I154970844"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Satyendra Kumar","raw_affiliation_strings":["Jaypee Institute of Information Technology, Noida, U. P., India"],"raw_orcid":"https://orcid.org/0000-0001-8545-2505","affiliations":[{"raw_affiliation_string":"Jaypee Institute of Information Technology, Noida, U. P., India","institution_ids":["https://openalex.org/I154970844"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5045532237"],"corresponding_institution_ids":["https://openalex.org/I74885063"],"apc_list":null,"apc_paid":null,"fwci":0.2003,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.44971769,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":91,"max":95},"biblio":{"volume":"33","issue":"12","first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/quantum-tunnelling","display_name":"Quantum tunnelling","score":0.7502129673957825},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.7367192506790161},{"id":"https://openalex.org/keywords/heterojunction","display_name":"Heterojunction","score":0.6952347755432129},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6110524535179138},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.557966411113739},{"id":"https://openalex.org/keywords/dual","display_name":"Dual (grammatical number)","score":0.4772743582725525},{"id":"https://openalex.org/keywords/mole-fraction","display_name":"Mole fraction","score":0.460581511259079},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.40267422795295715},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.331707626581192},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.20624351501464844},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.15742933750152588}],"concepts":[{"id":"https://openalex.org/C120398109","wikidata":"https://www.wikidata.org/wiki/Q175751","display_name":"Quantum tunnelling","level":2,"score":0.7502129673957825},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.7367192506790161},{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.6952347755432129},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6110524535179138},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.557966411113739},{"id":"https://openalex.org/C2780980858","wikidata":"https://www.wikidata.org/wiki/Q110022","display_name":"Dual (grammatical number)","level":2,"score":0.4772743582725525},{"id":"https://openalex.org/C36591836","wikidata":"https://www.wikidata.org/wiki/Q125264","display_name":"Mole fraction","level":2,"score":0.460581511259079},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.40267422795295715},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.331707626581192},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.20624351501464844},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.15742933750152588},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C142362112","wikidata":"https://www.wikidata.org/wiki/Q735","display_name":"Art","level":0,"score":0.0},{"id":"https://openalex.org/C124952713","wikidata":"https://www.wikidata.org/wiki/Q8242","display_name":"Literature","level":1,"score":0.0},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1142/s0218126624502128","is_oa":false,"landing_page_url":"https://doi.org/10.1142/s0218126624502128","pdf_url":null,"source":{"id":"https://openalex.org/S167602672","display_name":"Journal of Circuits Systems and Computers","issn_l":"0218-1266","issn":["0218-1266","1793-6454"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319815","host_organization_name":"World Scientific","host_organization_lineage":["https://openalex.org/P4310319815"],"host_organization_lineage_names":["World Scientific"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Circuits, Systems and Computers","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/11","score":0.5099999904632568,"display_name":"Sustainable cities and communities"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":34,"referenced_works":["https://openalex.org/W1991353080","https://openalex.org/W1994325774","https://openalex.org/W1997643851","https://openalex.org/W2002792980","https://openalex.org/W2005713153","https://openalex.org/W2054856749","https://openalex.org/W2062632887","https://openalex.org/W2073932165","https://openalex.org/W2075247018","https://openalex.org/W2105917526","https://openalex.org/W2110584581","https://openalex.org/W2111229858","https://openalex.org/W2119378720","https://openalex.org/W2121071016","https://openalex.org/W2127180025","https://openalex.org/W2129680670","https://openalex.org/W2143451736","https://openalex.org/W2156057417","https://openalex.org/W2533460176","https://openalex.org/W2735417541","https://openalex.org/W2942266371","https://openalex.org/W2966580969","https://openalex.org/W2997921357","https://openalex.org/W3003185454","https://openalex.org/W3004005501","https://openalex.org/W3010710249","https://openalex.org/W3014541640","https://openalex.org/W3023574506","https://openalex.org/W3043014344","https://openalex.org/W3045995108","https://openalex.org/W3094817358","https://openalex.org/W3128469058","https://openalex.org/W3138633549","https://openalex.org/W3154462176"],"related_works":["https://openalex.org/W1515161531","https://openalex.org/W4379114818","https://openalex.org/W2921865011","https://openalex.org/W1631058538","https://openalex.org/W2021859258","https://openalex.org/W4399069508","https://openalex.org/W4323658053","https://openalex.org/W2013924061","https://openalex.org/W2012959172","https://openalex.org/W1995707634"],"abstract_inverted_index":{"This":[0],"paper":[1],"puts":[2],"forward":[3],"a":[4,275],"new":[5],"vertical-tunneling-attributed":[6],"dual-material":[7,100],"double-gate":[8],"heterojunction-TFET":[9],"(VTDMDG-HTFET).":[10],"The":[11,29,173],"device":[12,174,190,202,236,256],"structure":[13],"of":[14,26,31,65,77,92,121,151,163,168,217,242,253],"VTDMDG-HTFET":[15,35,49,94,114,152,272],"includes":[16,51,89],"Si[Formula:":[17],"see":[18,20,67,72],"text]Ge[Formula:":[19],"text]":[21,68,73],"material":[22,70],"for":[23,198,233,278],"the":[24,75,81,87,90,96,108,213,225,234,240,254],"designing":[25],"source":[27],"region.":[28],"mechanism":[30],"vertical":[32,267],"tunneling":[33,41,268],"in":[34,74,119,161,215],"provides":[36],"superior":[37,122],"electric":[38],"field":[39],"at":[40,83],"interface":[42,170,244],"and":[43,61,157,166,176,200,220,269,285,292],"leads":[44],"to":[45,57,142,261],"improved":[46],"transfer":[47],"characteristics.":[48],"also":[50,154,231],"metal":[52],"gate":[53,78],"work-function":[54],"engineering":[55],"approach":[56],"facilitate":[58],"high":[59],"ON-current":[60],"small":[62],"OFF-current.":[63],"Application":[64],"high-[Formula:":[66],"dielectric":[69],"[Formula:":[71],"form":[76],"oxide":[79],"enhances":[80],"capacitive-coupling":[82],"channel-source":[84],"interface.":[85],"Moreover,":[86,189],"work":[88],"comparison":[91,208],"proposed":[93,201,235,255],"with":[95,134,159],"conventional":[97,199,264],"vertical-tunneling":[98],"based":[99,203,237],"double-gate-TFET":[101],"(VTDMDG-TFET).":[102],"It":[103],"has":[104,153],"been":[105,155,179],"observed":[106],"from":[107],"simulation":[109,175,193,228],"results":[110],"that":[111,250],"SiGe":[112,270],"source-based":[113,271],"offers":[115],"better":[116,258,276],"DC":[117],"characteristics":[118],"terms":[120,162,216],"ON-current,":[123],"smaller":[124,135],"OFF-current,":[125],"steeper":[126],"subthreshold-slope,":[127],"lower":[128],"threshold":[129,222],"voltage,":[130],"higher":[131],"transconductance":[132],"along":[133],"drain-induced":[136],"barrier-lowering":[137],"(DIBL)":[138],"effects":[139],"as":[140,259,282],"compared":[141,158,260],"its":[143,262],"counterpart":[144,263],"silicon-source-based":[145],"VTDMDG-TFET.":[146],"In":[147],"this":[148],"work,":[149],"reliability":[150,251],"examined":[156],"VTDMDG-TFET":[160],"temperature":[164],"sensitivity":[165],"effect":[167],"different":[169,243],"trap":[171,245],"charges.":[172],"investigations":[177],"have":[178],"carried":[180,196],"out":[181,197],"using":[182],"technology":[183],"computer":[184],"aided":[185],"design":[186],"(TCAD)":[187],"tool.":[188],"circuit":[191],"mixed-mode":[192],"analysis":[194,229],"is":[195,209,230,257],"resistive":[204],"load":[205],"inverters.":[206],"A":[207],"performed":[210,232],"between":[211],"both":[212],"inverters":[214],"prorogation":[218],"delay":[219],"switching":[221],"voltages.":[223],"Further,":[224],"mixed":[226],"mode":[227],"inverter":[238],"under":[239],"influence":[241],"charges":[246],"(ITCs).":[247],"Study":[248],"shows":[249],"performance":[252],"device.":[265],"Hence,":[266],"can":[273],"be":[274],"choice":[277],"various":[279],"applications":[280],"such":[281],"analog/RF,":[283],"analog":[284],"digital":[286],"electronic":[287],"circuits,":[288],"energy":[289],"harvesting,":[290],"gas-sensing":[291],"memory":[293],"devices.":[294]},"counts_by_year":[{"year":2025,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}