{"id":"https://openalex.org/W2912744753","doi":"https://doi.org/10.1142/s0218126620500097","title":"A Physics-Based Analytical Model for MgZnO/ZnO HEMT","display_name":"A Physics-Based Analytical Model for MgZnO/ZnO HEMT","publication_year":2019,"publication_date":"2019-02-14","ids":{"openalex":"https://openalex.org/W2912744753","doi":"https://doi.org/10.1142/s0218126620500097","mag":"2912744753"},"language":"en","primary_location":{"id":"doi:10.1142/s0218126620500097","is_oa":false,"landing_page_url":"https://doi.org/10.1142/s0218126620500097","pdf_url":null,"source":{"id":"https://openalex.org/S167602672","display_name":"Journal of Circuits Systems and Computers","issn_l":"0218-1266","issn":["0218-1266","1793-6454"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319815","host_organization_name":"World Scientific","host_organization_lineage":["https://openalex.org/P4310319815"],"host_organization_lineage_names":["World Scientific"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Circuits, Systems and Computers","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5088337404","display_name":"Yogesh Kumar Verma","orcid":"https://orcid.org/0000-0003-4145-7202"},"institutions":[{"id":"https://openalex.org/I152869788","display_name":"Motilal Nehru National Institute of Technology","ror":"https://ror.org/04dp7tp96","country_code":"IN","type":"education","lineage":["https://openalex.org/I152869788"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Yogesh Kumar Verma","raw_affiliation_strings":["Department of Electronics and Communication Engineering, Motilal Nehru National Institute of Technology Allahabad, Prayagraj 211004, Uttar Pradesh, India"],"raw_orcid":"https://orcid.org/0000-0003-4145-7202","affiliations":[{"raw_affiliation_string":"Department of Electronics and Communication Engineering, Motilal Nehru National Institute of Technology Allahabad, Prayagraj 211004, Uttar Pradesh, India","institution_ids":["https://openalex.org/I152869788"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5000974773","display_name":"Varun Mishra","orcid":"https://orcid.org/0000-0002-9264-9338"},"institutions":[{"id":"https://openalex.org/I152869788","display_name":"Motilal Nehru National Institute of Technology","ror":"https://ror.org/04dp7tp96","country_code":"IN","type":"education","lineage":["https://openalex.org/I152869788"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Varun Mishra","raw_affiliation_strings":["Department of Electronics and Communication Engineering, Motilal Nehru National Institute of Technology Allahabad, Prayagraj 211004, Uttar Pradesh, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronics and Communication Engineering, Motilal Nehru National Institute of Technology Allahabad, Prayagraj 211004, Uttar Pradesh, India","institution_ids":["https://openalex.org/I152869788"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5028498726","display_name":"Santosh Kumar Gupta","orcid":"https://orcid.org/0000-0003-4235-9065"},"institutions":[{"id":"https://openalex.org/I152869788","display_name":"Motilal Nehru National Institute of Technology","ror":"https://ror.org/04dp7tp96","country_code":"IN","type":"education","lineage":["https://openalex.org/I152869788"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Santosh Kumar Gupta","raw_affiliation_strings":["Department of Electronics and Communication Engineering, Motilal Nehru National Institute of Technology Allahabad, Prayagraj 211004, Uttar Pradesh, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronics and Communication Engineering, Motilal Nehru National Institute of Technology Allahabad, Prayagraj 211004, Uttar Pradesh, India","institution_ids":["https://openalex.org/I152869788"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I152869788"],"apc_list":null,"apc_paid":null,"fwci":1.4192,"has_fulltext":false,"cited_by_count":37,"citation_normalized_percentile":{"value":0.7986497,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":96,"max":99},"biblio":{"volume":"29","issue":"01","first_page":"2050009","last_page":"2050009"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10090","display_name":"ZnO doping and properties","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10090","display_name":"ZnO doping and properties","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.9327720403671265},{"id":"https://openalex.org/keywords/transconductance","display_name":"Transconductance","score":0.819214940071106},{"id":"https://openalex.org/keywords/poissons-equation","display_name":"Poisson's equation","score":0.5994487404823303},{"id":"https://openalex.org/keywords/fermi-gas","display_name":"Fermi gas","score":0.5317493677139282},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.5253764390945435},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5016477108001709},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.4770438075065613},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.47535035014152527},{"id":"https://openalex.org/keywords/condensed-matter-physics","display_name":"Condensed matter physics","score":0.4693489968776703},{"id":"https://openalex.org/keywords/current-density","display_name":"Current density","score":0.46601206064224243},{"id":"https://openalex.org/keywords/heterojunction","display_name":"Heterojunction","score":0.46594345569610596},{"id":"https://openalex.org/keywords/quantum-well","display_name":"Quantum well","score":0.44856521487236023},{"id":"https://openalex.org/keywords/electron","display_name":"Electron","score":0.3885478079319},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.38739970326423645},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.382453590631485},{"id":"https://openalex.org/keywords/quantum-mechanics","display_name":"Quantum mechanics","score":0.21821153163909912},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.1623322069644928}],"concepts":[{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.9327720403671265},{"id":"https://openalex.org/C2779283907","wikidata":"https://www.wikidata.org/wiki/Q1632964","display_name":"Transconductance","level":4,"score":0.819214940071106},{"id":"https://openalex.org/C96716743","wikidata":"https://www.wikidata.org/wiki/Q827688","display_name":"Poisson's equation","level":2,"score":0.5994487404823303},{"id":"https://openalex.org/C85867844","wikidata":"https://www.wikidata.org/wiki/Q1072904","display_name":"Fermi gas","level":3,"score":0.5317493677139282},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.5253764390945435},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5016477108001709},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4770438075065613},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.47535035014152527},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.4693489968776703},{"id":"https://openalex.org/C207740977","wikidata":"https://www.wikidata.org/wiki/Q234072","display_name":"Current density","level":2,"score":0.46601206064224243},{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.46594345569610596},{"id":"https://openalex.org/C29169072","wikidata":"https://www.wikidata.org/wiki/Q521166","display_name":"Quantum well","level":3,"score":0.44856521487236023},{"id":"https://openalex.org/C147120987","wikidata":"https://www.wikidata.org/wiki/Q2225","display_name":"Electron","level":2,"score":0.3885478079319},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.38739970326423645},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.382453590631485},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.21821153163909912},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.1623322069644928},{"id":"https://openalex.org/C520434653","wikidata":"https://www.wikidata.org/wiki/Q38867","display_name":"Laser","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1142/s0218126620500097","is_oa":false,"landing_page_url":"https://doi.org/10.1142/s0218126620500097","pdf_url":null,"source":{"id":"https://openalex.org/S167602672","display_name":"Journal of Circuits Systems and Computers","issn_l":"0218-1266","issn":["0218-1266","1793-6454"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319815","host_organization_name":"World Scientific","host_organization_lineage":["https://openalex.org/P4310319815"],"host_organization_lineage_names":["World Scientific"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Circuits, Systems and Computers","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.6800000071525574,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":33,"referenced_works":["https://openalex.org/W1550302297","https://openalex.org/W1566916904","https://openalex.org/W1973090670","https://openalex.org/W1977241145","https://openalex.org/W1989974213","https://openalex.org/W1994912458","https://openalex.org/W1995113963","https://openalex.org/W1998005932","https://openalex.org/W1999800158","https://openalex.org/W2007803098","https://openalex.org/W2035635036","https://openalex.org/W2039309324","https://openalex.org/W2060636679","https://openalex.org/W2073354463","https://openalex.org/W2078232245","https://openalex.org/W2080842078","https://openalex.org/W2096515792","https://openalex.org/W2100450057","https://openalex.org/W2116793014","https://openalex.org/W2134767699","https://openalex.org/W2157880699","https://openalex.org/W2159280428","https://openalex.org/W2161029953","https://openalex.org/W2163205443","https://openalex.org/W2460802407","https://openalex.org/W2578172029","https://openalex.org/W2690279537","https://openalex.org/W2735502885","https://openalex.org/W2738647383","https://openalex.org/W2791695151","https://openalex.org/W2801447543","https://openalex.org/W2805476414","https://openalex.org/W2894919147"],"related_works":["https://openalex.org/W1977193875","https://openalex.org/W2146864492","https://openalex.org/W1974075916","https://openalex.org/W1679432894","https://openalex.org/W2073318835","https://openalex.org/W2042128947","https://openalex.org/W2912744753","https://openalex.org/W2380013392","https://openalex.org/W2161159121","https://openalex.org/W1991796793"],"abstract_inverted_index":{"In":[0],"this":[1],"paper,":[2],"a":[3],"physics-based":[4],"compact":[5,56],"model":[6],"is":[7,22],"developed":[8],"for":[9,63,67],"novel":[10],"MgZnO/ZnO":[11],"high-electron-mobility":[12],"transistor":[13],"(HEMT).":[14],"Poisson\u2019s":[15],"equation":[16,21],"coupled":[17],"with":[18,40,100,107],"1D":[19],"Schr\u00f6dinger":[20],"solved":[23],"self-consistently":[24],"in":[25],"the":[26,46,64,71,77,108],"triangular":[27],"quantum":[28],"well":[29],"to":[30,42,70,82,102],"derive":[31],"an":[32],"expression":[33,78],"of":[34,48,73,79],"two-dimensional":[35],"electron":[36],"gas":[37],"(2DEG)":[38],"density":[39,81],"respect":[41,101],"gate":[43,86,88,90,103],"voltage":[44,104],"at":[45],"heterointerface":[47],"barrier":[49],"(MgZnO)":[50],"and":[51,97,105],"buffer":[52],"(ZnO)":[53],"layers.":[54],"A":[55],"mathematical":[57],"framework":[58],"has":[59],"been":[60],"devised":[61],"further":[62],"first":[65],"time":[66],"ZnO-based":[68],"HEMT":[69],"best":[72],"our":[74],"knowledge":[75],"using":[76],"2DEG":[80],"compute":[83],"surface":[84],"potential,":[85],"charge,":[87],"current,":[89],"capacitance,":[91],"current\u2013voltage":[92],"characteristics,":[93],"output":[94,110],"conductance,":[95],"transconductance":[96],"cut-off":[98],"frequency":[99],"along":[106],"drain\u2013source":[109],"resistance":[111],"[Formula:":[112],"see":[113],"text].":[114]},"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2025,"cited_by_count":4},{"year":2024,"cited_by_count":11},{"year":2023,"cited_by_count":4},{"year":2022,"cited_by_count":7},{"year":2021,"cited_by_count":6},{"year":2020,"cited_by_count":3}],"updated_date":"2026-05-21T06:26:12.895304","created_date":"2025-10-10T00:00:00"}