{"id":"https://openalex.org/W2127401680","doi":"https://doi.org/10.1142/s0218126612400178","title":"A NOVEL ULTRA-LOW POWER TWO-TERMINAL ZENER VOLTAGE REFERENCE","display_name":"A NOVEL ULTRA-LOW POWER TWO-TERMINAL ZENER VOLTAGE REFERENCE","publication_year":2012,"publication_date":"2012-10-01","ids":{"openalex":"https://openalex.org/W2127401680","doi":"https://doi.org/10.1142/s0218126612400178","mag":"2127401680"},"language":"en","primary_location":{"id":"doi:10.1142/s0218126612400178","is_oa":false,"landing_page_url":"https://doi.org/10.1142/s0218126612400178","pdf_url":null,"source":{"id":"https://openalex.org/S167602672","display_name":"Journal of Circuits Systems and Computers","issn_l":"0218-1266","issn":["0218-1266","1793-6454"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319815","host_organization_name":"World Scientific","host_organization_lineage":["https://openalex.org/P4310319815"],"host_organization_lineage_names":["World Scientific"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Circuits, Systems and Computers","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5036486742","display_name":"Chiang Liang Kok","orcid":"https://orcid.org/0009-0007-7368-1280"},"institutions":[{"id":"https://openalex.org/I172675005","display_name":"Nanyang Technological University","ror":"https://ror.org/02e7b5302","country_code":"SG","type":"education","lineage":["https://openalex.org/I172675005"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"CHIANG LIANG KOK","raw_affiliation_strings":["VIRTUS \u2014 IC Design Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"VIRTUS \u2014 IC Design Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore","institution_ids":["https://openalex.org/I172675005"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5062730461","display_name":"Liter Siek","orcid":"https://orcid.org/0000-0002-0415-6497"},"institutions":[{"id":"https://openalex.org/I172675005","display_name":"Nanyang Technological University","ror":"https://ror.org/02e7b5302","country_code":"SG","type":"education","lineage":["https://openalex.org/I172675005"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"LITER SIEK","raw_affiliation_strings":["VIRTUS \u2014 IC Design Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"VIRTUS \u2014 IC Design Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore","institution_ids":["https://openalex.org/I172675005"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5010513140","display_name":"Wei Meng Lim","orcid":null},"institutions":[{"id":"https://openalex.org/I172675005","display_name":"Nanyang Technological University","ror":"https://ror.org/02e7b5302","country_code":"SG","type":"education","lineage":["https://openalex.org/I172675005"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"WEI MENG LIM","raw_affiliation_strings":["VIRTUS \u2014 IC Design Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"VIRTUS \u2014 IC Design Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore","institution_ids":["https://openalex.org/I172675005"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I172675005"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.15696877,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"21","issue":"06","first_page":"1240017","last_page":"1240017"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/zener-diode","display_name":"Zener diode","score":0.7690595984458923},{"id":"https://openalex.org/keywords/voltage-reference","display_name":"Voltage reference","score":0.6634820103645325},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.6565139889717102},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.6315119862556458},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.606399416923523},{"id":"https://openalex.org/keywords/low-voltage","display_name":"Low voltage","score":0.5969325304031372},{"id":"https://openalex.org/keywords/terminal","display_name":"Terminal (telecommunication)","score":0.5835077166557312},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.49857378005981445},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.498553991317749},{"id":"https://openalex.org/keywords/bandgap-voltage-reference","display_name":"Bandgap voltage reference","score":0.46614351868629456},{"id":"https://openalex.org/keywords/power-mosfet","display_name":"Power MOSFET","score":0.4659019410610199},{"id":"https://openalex.org/keywords/overdrive-voltage","display_name":"Overdrive voltage","score":0.4633415639400482},{"id":"https://openalex.org/keywords/die","display_name":"Die (integrated circuit)","score":0.4618147611618042},{"id":"https://openalex.org/keywords/temperature-coefficient","display_name":"Temperature coefficient","score":0.4569166302680969},{"id":"https://openalex.org/keywords/power-consumption","display_name":"Power consumption","score":0.4568345248699188},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4545118808746338},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.38781553506851196},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.36096739768981934},{"id":"https://openalex.org/keywords/dropout-voltage","display_name":"Dropout voltage","score":0.33252352476119995},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.3076396882534027},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.29249483346939087},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.272298127412796},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.20358392596244812},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.1262754499912262},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.07532498240470886}],"concepts":[{"id":"https://openalex.org/C50566616","wikidata":"https://www.wikidata.org/wiki/Q180586","display_name":"Zener diode","level":4,"score":0.7690595984458923},{"id":"https://openalex.org/C44351266","wikidata":"https://www.wikidata.org/wiki/Q1465532","display_name":"Voltage reference","level":3,"score":0.6634820103645325},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.6565139889717102},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.6315119862556458},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.606399416923523},{"id":"https://openalex.org/C128624480","wikidata":"https://www.wikidata.org/wiki/Q1504817","display_name":"Low voltage","level":3,"score":0.5969325304031372},{"id":"https://openalex.org/C2779664074","wikidata":"https://www.wikidata.org/wiki/Q3518405","display_name":"Terminal (telecommunication)","level":2,"score":0.5835077166557312},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.49857378005981445},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.498553991317749},{"id":"https://openalex.org/C127033052","wikidata":"https://www.wikidata.org/wiki/Q48635","display_name":"Bandgap voltage reference","level":5,"score":0.46614351868629456},{"id":"https://openalex.org/C88653102","wikidata":"https://www.wikidata.org/wiki/Q570553","display_name":"Power MOSFET","level":5,"score":0.4659019410610199},{"id":"https://openalex.org/C195905723","wikidata":"https://www.wikidata.org/wiki/Q7113634","display_name":"Overdrive voltage","level":5,"score":0.4633415639400482},{"id":"https://openalex.org/C111106434","wikidata":"https://www.wikidata.org/wiki/Q1072430","display_name":"Die (integrated circuit)","level":2,"score":0.4618147611618042},{"id":"https://openalex.org/C16643434","wikidata":"https://www.wikidata.org/wiki/Q898642","display_name":"Temperature coefficient","level":2,"score":0.4569166302680969},{"id":"https://openalex.org/C2984118289","wikidata":"https://www.wikidata.org/wiki/Q29954","display_name":"Power consumption","level":3,"score":0.4568345248699188},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4545118808746338},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.38781553506851196},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.36096739768981934},{"id":"https://openalex.org/C15032970","wikidata":"https://www.wikidata.org/wiki/Q851210","display_name":"Dropout voltage","level":4,"score":0.33252352476119995},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.3076396882534027},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.29249483346939087},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.272298127412796},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.20358392596244812},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.1262754499912262},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.07532498240470886},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1142/s0218126612400178","is_oa":false,"landing_page_url":"https://doi.org/10.1142/s0218126612400178","pdf_url":null,"source":{"id":"https://openalex.org/S167602672","display_name":"Journal of Circuits Systems and Computers","issn_l":"0218-1266","issn":["0218-1266","1793-6454"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319815","host_organization_name":"World Scientific","host_organization_lineage":["https://openalex.org/P4310319815"],"host_organization_lineage_names":["World Scientific"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Circuits, Systems and Computers","raw_type":"journal-article"},{"id":"pmh:oai:dr.ntu.edu.sg:10356/106794","is_oa":false,"landing_page_url":"http://hdl.handle.net/10220/17666","pdf_url":null,"source":{"id":"https://openalex.org/S4306402609","display_name":"DR-NTU (Nanyang Technological University)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I172675005","host_organization_name":"Nanyang Technological University","host_organization_lineage":["https://openalex.org/I172675005"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"Journal Article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.8799999952316284,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":13,"referenced_works":["https://openalex.org/W649475307","https://openalex.org/W1597620877","https://openalex.org/W2011872929","https://openalex.org/W2067658274","https://openalex.org/W2092954710","https://openalex.org/W2098227045","https://openalex.org/W2109526415","https://openalex.org/W2133201500","https://openalex.org/W2140755946","https://openalex.org/W2157109715","https://openalex.org/W2158981990","https://openalex.org/W2164546195","https://openalex.org/W2171702041"],"related_works":["https://openalex.org/W1901426235","https://openalex.org/W2349078291","https://openalex.org/W2025577345","https://openalex.org/W2151854205","https://openalex.org/W1481245673","https://openalex.org/W2205084904","https://openalex.org/W2678139733","https://openalex.org/W4220980193","https://openalex.org/W2349647559","https://openalex.org/W2128111561"],"abstract_inverted_index":{"A":[0],"novel":[1],"ultra-low":[2,117],"power":[3,118],"two":[4,35,133,150],"terminal":[5,36,134],"zener":[6],"voltage":[7,32,41,81,146],"reference":[8,42],"is":[9,126],"designed":[10],"and":[11,29,131,144],"implemented.":[12],"It":[13,88],"realizes":[14],"the":[15,22],"concept":[16],"of":[17,21,58,82,94,110,120],"using":[18],"sub-threshold":[19],"region":[20],"MOSFET":[23],"to":[24,104,139],"achieve":[25],"a":[26,34,53,78,98,107,141],"very":[27,54,142],"low":[28,143],"stable":[30,79],"output":[31,80],"within":[33],"circuit":[37],"topology.":[38],"This":[39,129],"proposed":[40],"was":[43],"fabricated":[44],"with":[45,106],"Global":[46],"Foundries":[47],"0.18-\u03bcm":[48],"CMOS":[49],"process,":[50],"consuming":[51],"only":[52],"small":[55],"die":[56],"area":[57],"0.0009":[59],"mm":[60],"2":[61,111,121],".":[62],"Experimental":[63],"results,":[64],"carried":[65],"out":[66],"on":[67],"five":[68],"different":[69],"silicon":[70],"samples,":[71],"explicitly":[72],"show":[73],"that":[74],"it":[75,114],"can":[76,136],"yield":[77],"0.22":[83],"V":[84],"at":[85],"room":[86],"temperature.":[87],"achieves":[89,115],"an":[90,116,153],"average":[91],"temperature":[92,100],"coefficient":[93],"6.4":[95],"ppm/\u00b0C":[96],"across":[97],"wide":[99],"range":[101],"from":[102],"0\u00b0C":[103],"150\u00b0C":[105],"standard":[108],"deviation":[109],"ppm/\u00b0C.":[112],"Furthermore,":[113],"consumption":[119],"\u03bcW.":[122],"The":[123],"load":[124],"regulation":[125],"20":[127],"mV/V.":[128],"simple":[130],"innovative":[132],"device":[135],"be":[137],"used":[138],"provide":[140],"constant":[145],"difference":[147],"between":[148],"any":[149],"nodes":[151],"in":[152],"analog":[154],"circuit.":[155]},"counts_by_year":[],"updated_date":"2026-05-21T06:26:12.895304","created_date":"2025-10-10T00:00:00"}