{"id":"https://openalex.org/W2029731238","doi":"https://doi.org/10.1142/s0218126609005253","title":"LOGARITHMICAL CURVATURE-CORRECTED VOLTAGE REFERENCES WITH IMPROVED TEMPERATURE BEHAVIOR","display_name":"LOGARITHMICAL CURVATURE-CORRECTED VOLTAGE REFERENCES WITH IMPROVED TEMPERATURE BEHAVIOR","publication_year":2009,"publication_date":"2009-05-01","ids":{"openalex":"https://openalex.org/W2029731238","doi":"https://doi.org/10.1142/s0218126609005253","mag":"2029731238"},"language":"en","primary_location":{"id":"doi:10.1142/s0218126609005253","is_oa":false,"landing_page_url":"https://doi.org/10.1142/s0218126609005253","pdf_url":null,"source":{"id":"https://openalex.org/S167602672","display_name":"Journal of Circuits Systems and Computers","issn_l":"0218-1266","issn":["0218-1266","1793-6454"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319815","host_organization_name":"World Scientific","host_organization_lineage":["https://openalex.org/P4310319815"],"host_organization_lineage_names":["World Scientific"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Circuits, Systems and Computers","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5112294951","display_name":"Cosmin Popa","orcid":null},"institutions":[{"id":"https://openalex.org/I61641377","display_name":"Universitatea Na\u021bional\u0103 de \u0218tiin\u021b\u0103 \u0219i Tehnologie Politehnica Bucure\u0219ti","ror":"https://ror.org/0558j5q12","country_code":"RO","type":"education","lineage":["https://openalex.org/I61641377"]}],"countries":["RO"],"is_corresponding":true,"raw_author_name":"COSMIN POPA","raw_affiliation_strings":["University Politehnica of Bucharest, Faculty of Electronics, Telecommunications and Information Technology, Bucharest, Romania"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University Politehnica of Bucharest, Faculty of Electronics, Telecommunications and Information Technology, Bucharest, Romania","institution_ids":["https://openalex.org/I61641377"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5112294951"],"corresponding_institution_ids":["https://openalex.org/I61641377"],"apc_list":null,"apc_paid":null,"fwci":0.4591,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.67525177,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"18","issue":"03","first_page":"519","last_page":"534"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9983000159263611,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/voltage-reference","display_name":"Voltage reference","score":0.661422610282898},{"id":"https://openalex.org/keywords/subthreshold-conduction","display_name":"Subthreshold conduction","score":0.6587665677070618},{"id":"https://openalex.org/keywords/input-offset-voltage","display_name":"Input offset voltage","score":0.6016255617141724},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5880463719367981},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5718399286270142},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5393806099891663},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4970703423023224},{"id":"https://openalex.org/keywords/resistor","display_name":"Resistor","score":0.48331332206726074},{"id":"https://openalex.org/keywords/overdrive-voltage","display_name":"Overdrive voltage","score":0.46093833446502686},{"id":"https://openalex.org/keywords/bipolar-junction-transistor","display_name":"Bipolar junction transistor","score":0.42988717555999756},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.4116396903991699},{"id":"https://openalex.org/keywords/dropout-voltage","display_name":"Dropout voltage","score":0.39525362849235535},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.36624836921691895},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.3062615394592285},{"id":"https://openalex.org/keywords/operational-amplifier","display_name":"Operational amplifier","score":0.2786981165409088},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.16638219356536865}],"concepts":[{"id":"https://openalex.org/C44351266","wikidata":"https://www.wikidata.org/wiki/Q1465532","display_name":"Voltage reference","level":3,"score":0.661422610282898},{"id":"https://openalex.org/C156465305","wikidata":"https://www.wikidata.org/wiki/Q1658601","display_name":"Subthreshold conduction","level":4,"score":0.6587665677070618},{"id":"https://openalex.org/C63651839","wikidata":"https://www.wikidata.org/wiki/Q478566","display_name":"Input offset voltage","level":5,"score":0.6016255617141724},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5880463719367981},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5718399286270142},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5393806099891663},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4970703423023224},{"id":"https://openalex.org/C137488568","wikidata":"https://www.wikidata.org/wiki/Q5321","display_name":"Resistor","level":3,"score":0.48331332206726074},{"id":"https://openalex.org/C195905723","wikidata":"https://www.wikidata.org/wiki/Q7113634","display_name":"Overdrive voltage","level":5,"score":0.46093833446502686},{"id":"https://openalex.org/C23061349","wikidata":"https://www.wikidata.org/wiki/Q188946","display_name":"Bipolar junction transistor","level":4,"score":0.42988717555999756},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.4116396903991699},{"id":"https://openalex.org/C15032970","wikidata":"https://www.wikidata.org/wiki/Q851210","display_name":"Dropout voltage","level":4,"score":0.39525362849235535},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.36624836921691895},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.3062615394592285},{"id":"https://openalex.org/C145366948","wikidata":"https://www.wikidata.org/wiki/Q178947","display_name":"Operational amplifier","level":4,"score":0.2786981165409088},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.16638219356536865}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1142/s0218126609005253","is_oa":false,"landing_page_url":"https://doi.org/10.1142/s0218126609005253","pdf_url":null,"source":{"id":"https://openalex.org/S167602672","display_name":"Journal of Circuits Systems and Computers","issn_l":"0218-1266","issn":["0218-1266","1793-6454"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319815","host_organization_name":"World Scientific","host_organization_lineage":["https://openalex.org/P4310319815"],"host_organization_lineage_names":["World Scientific"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Circuits, Systems and Computers","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.8399999737739563,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":12,"referenced_works":["https://openalex.org/W1965284924","https://openalex.org/W1999592297","https://openalex.org/W2098944725","https://openalex.org/W2105680435","https://openalex.org/W2118389586","https://openalex.org/W2118526058","https://openalex.org/W2122486141","https://openalex.org/W2133201500","https://openalex.org/W2140280638","https://openalex.org/W2145706786","https://openalex.org/W2146255617","https://openalex.org/W2157204167"],"related_works":["https://openalex.org/W2087168948","https://openalex.org/W2348464439","https://openalex.org/W2095476332","https://openalex.org/W3085055085","https://openalex.org/W3113655337","https://openalex.org/W3196410233","https://openalex.org/W3106621756","https://openalex.org/W2367229640","https://openalex.org/W2055167838","https://openalex.org/W2358628378"],"abstract_inverted_index":{"Two":[0],"voltage":[1,32,37,116,145,151,170,181,194,237,319,325],"reference":[2,115,144,182,318],"circuits":[3],"will":[4,25,63,95,223],"be":[5,26,64,224],"presented.":[6],"For":[7],"the":[8,11,40,44,73,84,93,114,137,143,149,167,178,186,198,209,213,227,230,235,251,281,293,317,323],"first":[9],"circuit,":[10],"linear":[12],"compensation":[13,228],"of":[14,42,48,83,89,113,142,177,189,211,229,234,289,316],"V":[15,79,118,122,308,312],"GS":[16,80],"(T)":[17],"for":[18,71,117,155,238,257,292,329],"an":[19,29,67],"MOS":[20,91,202,242,258],"transistor":[21,243],"in":[22,86,205,272],"subthreshold":[23,240],"region":[24],"realized":[27],"using":[28,66],"original":[30],"offset":[31],"follower":[33],"block":[34],"as":[35],"PTAT":[36],"generator,":[38],"with":[39,55,105,146,201,208,215,264,320],"advantages":[41],"reducing":[43],"silicon":[45],"area":[46],"and":[47,123,166,303],"increasing":[49],"accuracy":[50],"by":[51,196,244,249],"replacing":[52,197],"matched":[53,56],"resistors":[54],"transistors.":[57],"A":[58],"new":[59,219],"logarithmic":[60,74],"curvature-correction":[61,221],"technique":[62,222],"implemented":[65,271],"asymmetric":[68],"differential":[69],"amplifier":[70],"compensating":[72],"temperature":[75,111,125,187,232,266,287,295],"dependent":[76],"term":[77],"from":[78],"(T).":[81],"Because":[82],"operation":[85],"weak":[87,206],"inversion":[88],"all":[90],"transistors,":[92],"circuit":[94,159,269],"have":[96],"a":[97,124,190,239,245,286,304],"very":[98],"small":[99,305],"current":[100,160,247],"consumption,":[101],"making":[102],"it":[103],"compatible":[104],"low-power":[106],"low-voltage":[107],"designs.":[108],"The":[109,140,158,174,218,268,277,314],"simulated":[110],"coefficient":[112,288],"DD":[119,309],"=":[120,310],"2.5":[121,311],"range":[126],"0":[127,297],"<":[128,130,298,300],"t":[129,299],"30\u00b0":[131],"C":[132,302],"is":[133,152,162,171,183,270,326],"36.5":[134],"ppm/K,":[135],"confirming":[136],"theoretical":[138,282],"estimations.":[139],"variation":[141,315],"respect":[147,321],"to":[148,184,322],"supply":[150,169,306,324],"1.5":[153],"mV/V":[154,328],"2\u20134":[156,330],"V.":[157,173,331],"consumption":[161],"about":[163],"1":[164],"\u03bcA":[165],"minimal":[168],"2":[172],"main":[175],"goal":[176],"second":[179],"proposed":[180,220],"improve":[185],"behavior":[188],"previous":[191],"reported":[192],"bipolar":[193,199],"reference,":[195],"transistors":[200,203,259],"working":[204],"inversion,":[207],"advantage":[210],"obtaining":[212],"compatibility":[214],"CMOS":[216,275],"technology.":[217,276],"based":[225],"on":[226],"nonlinear":[231],"dependence":[233],"gate-source":[236,255],"operated":[241],"correction":[246],"obtained":[248],"taking":[250],"difference":[252],"between":[253],"two":[254],"voltages":[256],"biased":[260],"at":[261],"drain":[262],"currents":[263],"different":[265],"dependencies.":[267],"0.35":[273],"\u03bcm":[274],"SPICE":[278],"simulation":[279],"confirms":[280],"estimated":[283],"results,":[284],"reporting":[285],"4.23":[290],"ppm/K":[291],"commercial":[294],"range,":[296],"70\u00b0":[301],"voltage,":[307],".":[313],"0.9":[327]},"counts_by_year":[],"updated_date":"2026-05-21T06:26:12.895304","created_date":"2025-10-10T00:00:00"}