{"id":"https://openalex.org/W2018484494","doi":"https://doi.org/10.1109/vlsi-dat.2012.6212606","title":"New design on 2×VDD-tolerant power-rail ESD clamp circuit with low standby leakage in 65nm CMOS process","display_name":"New design on 2×VDD-tolerant power-rail ESD clamp circuit with low standby leakage in 65nm CMOS process","publication_year":2012,"publication_date":"2012-04-01","ids":{"openalex":"https://openalex.org/W2018484494","doi":"https://doi.org/10.1109/vlsi-dat.2012.6212606","mag":"2018484494"},"language":"en","primary_location":{"id":"doi:10.1109/vlsi-dat.2012.6212606","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vlsi-dat.2012.6212606","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of Technical Program of 2012 VLSI Design, Automation and Test","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5102214259","display_name":"Chih-Ting Yeh","orcid":null},"institutions":[{"id":"https://openalex.org/I142066694","display_name":"ITRI International","ror":"https://ror.org/04wwsbd59","country_code":"US","type":"facility","lineage":["https://openalex.org/I142066694"]},{"id":"https://openalex.org/I4210148468","display_name":"Industrial Technology Research Institute","ror":"https://ror.org/05szzwt63","country_code":"TW","type":"nonprofit","lineage":["https://openalex.org/I4210148468"]}],"countries":["TW","US"],"is_corresponding":true,"raw_author_name":"Chih-Ting Yeh","raw_affiliation_strings":["Information and Communications Research Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan","Information and Communications Research Lab, Industrial Technology Research Institute, Hsinchu, Taiwan#TAB#"],"affiliations":[{"raw_affiliation_string":"Information and Communications Research Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I4210148468"]},{"raw_affiliation_string":"Information and Communications Research Lab, Industrial Technology Research Institute, Hsinchu, Taiwan#TAB#","institution_ids":["https://openalex.org/I142066694"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5043540734","display_name":"Ming\u2010Dou Ker","orcid":"https://orcid.org/0000-0003-3622-181X"},"institutions":[{"id":"https://openalex.org/I4210148468","display_name":"Industrial Technology Research Institute","ror":"https://ror.org/05szzwt63","country_code":"TW","type":"nonprofit","lineage":["https://openalex.org/I4210148468"]},{"id":"https://openalex.org/I148366613","display_name":"National Yang Ming Chiao Tung University","ror":"https://ror.org/00se2k293","country_code":"TW","type":"education","lineage":["https://openalex.org/I148366613"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Ming-Dou Ker","raw_affiliation_strings":["Information and Communications Research Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan","Department of Electronics Engineering & Institute of Electronics National Chiao-Tung University, Hsinchu, Taiwan"],"affiliations":[{"raw_affiliation_string":"Information and Communications Research Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I4210148468"]},{"raw_affiliation_string":"Department of Electronics Engineering & Institute of Electronics National Chiao-Tung University, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I148366613"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5102214259"],"corresponding_institution_ids":["https://openalex.org/I142066694","https://openalex.org/I4210148468"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.08634909,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.991100013256073,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":0.9891999959945679,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/clamper","display_name":"Clamper","score":0.7979816198348999},{"id":"https://openalex.org/keywords/electrostatic-discharge","display_name":"Electrostatic discharge","score":0.7873374223709106},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.6571115851402283},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.6226975321769714},{"id":"https://openalex.org/keywords/standby-power","display_name":"Standby power","score":0.6018952131271362},{"id":"https://openalex.org/keywords/gate-oxide","display_name":"Gate oxide","score":0.5496575832366943},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.5337088704109192},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.4285304546356201},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.42233338952064514},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.3810713291168213},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.35042378306388855},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.33217352628707886},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.1954437792301178}],"concepts":[{"id":"https://openalex.org/C64881904","wikidata":"https://www.wikidata.org/wiki/Q825778","display_name":"Clamper","level":3,"score":0.7979816198348999},{"id":"https://openalex.org/C205483674","wikidata":"https://www.wikidata.org/wiki/Q3574961","display_name":"Electrostatic discharge","level":3,"score":0.7873374223709106},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.6571115851402283},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.6226975321769714},{"id":"https://openalex.org/C7140552","wikidata":"https://www.wikidata.org/wiki/Q1366402","display_name":"Standby power","level":3,"score":0.6018952131271362},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.5496575832366943},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.5337088704109192},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.4285304546356201},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.42233338952064514},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.3810713291168213},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.35042378306388855},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.33217352628707886},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.1954437792301178},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/vlsi-dat.2012.6212606","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vlsi-dat.2012.6212606","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of Technical Program of 2012 VLSI Design, Automation and Test","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.8500000238418579,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":13,"referenced_works":["https://openalex.org/W2085898298","https://openalex.org/W2086185767","https://openalex.org/W2098347740","https://openalex.org/W2102434753","https://openalex.org/W2116641647","https://openalex.org/W2117493644","https://openalex.org/W2120399117","https://openalex.org/W2126232622","https://openalex.org/W2152525104","https://openalex.org/W2152811937","https://openalex.org/W2162669223","https://openalex.org/W2167393507","https://openalex.org/W6683981759"],"related_works":["https://openalex.org/W2046430182","https://openalex.org/W1571396369","https://openalex.org/W2154271946","https://openalex.org/W1985232861","https://openalex.org/W2169305461","https://openalex.org/W2563543428","https://openalex.org/W2763943869","https://openalex.org/W2138659665","https://openalex.org/W1966802912","https://openalex.org/W2133051202"],"abstract_inverted_index":{"A":[0],"2\u00d7VDD-tolerant":[1],"power-rail":[2,36],"electrostatic":[3],"discharge":[4],"(ESD)":[5],"clamp":[6,22,38],"circuit":[7,39,101],"with":[8,70,104],"only":[9],"thin":[10],"gate":[11,53],"oxide":[12,54],"1V":[13],"devices":[14,57],"and":[15,27,87],"silicon-controlled":[16],"rectifier":[17],"(SCR)":[18],"as":[19],"main":[20],"ESD":[21,37,60,85],"device":[23],"has":[24,40],"been":[25],"proposed":[26,35,68],"verified":[28],"in":[29,58,75],"a":[30],"65nm":[31],"CMOS":[32],"process.":[33],"The":[34],"an":[41,88],"ultra-low":[42,89],"standby":[43,90],"leakage":[44,91],"current":[45,92],"by":[46],"reducing":[47],"the":[48,52,56,59,64,67,99],"voltage":[49],"drop":[50],"across":[51],"of":[55,73,93],"detection":[61],"circuit.":[62],"From":[63],"measured":[65],"results,":[66],"design":[69],"SCR":[71],"dimension":[72],"50\u03bcm":[74],"width":[76],"can":[77],"achieve":[78],"6.5kV":[79],"human-body-model":[80],"(HBM),":[81],"300V":[82],"machine-model":[83],"(MM)":[84],"levels,":[86],"34.1nA":[94],"at":[95],"room":[96],"temperature":[97],"under":[98],"normal":[100],"operating":[102],"condition":[103],"1.8V":[105],"bias.":[106]},"counts_by_year":[{"year":2018,"cited_by_count":2},{"year":2017,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}