{"id":"https://openalex.org/W2994919687","doi":"https://doi.org/10.1109/tencon.2019.8929531","title":"An Architectural Parametric Analysis for Vertical Super-Thin Body (VSTB) MOSFET with Double Material Gate (DMG)","display_name":"An Architectural Parametric Analysis for Vertical Super-Thin Body (VSTB) MOSFET with Double Material Gate (DMG)","publication_year":2019,"publication_date":"2019-10-01","ids":{"openalex":"https://openalex.org/W2994919687","doi":"https://doi.org/10.1109/tencon.2019.8929531","mag":"2994919687"},"language":"en","primary_location":{"id":"doi:10.1109/tencon.2019.8929531","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tencon.2019.8929531","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"TENCON 2019 - 2019 IEEE Region 10 Conference (TENCON)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5075891986","display_name":"Kuheli Roy Barman","orcid":"https://orcid.org/0000-0003-0595-1449"},"institutions":[{"id":"https://openalex.org/I151903974","display_name":"National Institute Of Technology Silchar","ror":"https://ror.org/001ws2a36","country_code":"IN","type":"education","lineage":["https://openalex.org/I151903974"]}],"countries":["IN"],"is_corresponding":true,"raw_author_name":"Kuheli Roy Barman","raw_affiliation_strings":["Department of Electronics and Communication Engineering, National Institute of Technology, Silchar, Silchar, India"],"affiliations":[{"raw_affiliation_string":"Department of Electronics and Communication Engineering, National Institute of Technology, Silchar, Silchar, India","institution_ids":["https://openalex.org/I151903974"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5091134142","display_name":"Srimanta Baishya","orcid":"https://orcid.org/0000-0001-8984-8806"},"institutions":[{"id":"https://openalex.org/I151903974","display_name":"National Institute Of Technology Silchar","ror":"https://ror.org/001ws2a36","country_code":"IN","type":"education","lineage":["https://openalex.org/I151903974"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Srimanta Baishya","raw_affiliation_strings":["Department of Electronics and Communication Engineering, National Institute of Technology, Silchar, Silchar, India"],"affiliations":[{"raw_affiliation_string":"Department of Electronics and Communication Engineering, National Institute of Technology, Silchar, Silchar, India","institution_ids":["https://openalex.org/I151903974"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5075891986"],"corresponding_institution_ids":["https://openalex.org/I151903974"],"apc_list":null,"apc_paid":null,"fwci":0.8346,"has_fulltext":false,"cited_by_count":7,"citation_normalized_percentile":{"value":0.7478925,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":96,"max":97},"biblio":{"volume":"86","issue":null,"first_page":"62","last_page":"66"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/parametric-statistics","display_name":"Parametric statistics","score":0.5157535076141357},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.45163023471832275},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.341455340385437},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.1950351595878601},{"id":"https://openalex.org/keywords/statistics","display_name":"Statistics","score":0.0960579514503479}],"concepts":[{"id":"https://openalex.org/C117251300","wikidata":"https://www.wikidata.org/wiki/Q1849855","display_name":"Parametric statistics","level":2,"score":0.5157535076141357},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.45163023471832275},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.341455340385437},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.1950351595878601},{"id":"https://openalex.org/C105795698","wikidata":"https://www.wikidata.org/wiki/Q12483","display_name":"Statistics","level":1,"score":0.0960579514503479}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tencon.2019.8929531","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tencon.2019.8929531","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"TENCON 2019 - 2019 IEEE Region 10 Conference (TENCON)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/11","display_name":"Sustainable cities and communities","score":0.6000000238418579}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":18,"referenced_works":["https://openalex.org/W1511865672","https://openalex.org/W1547754762","https://openalex.org/W1891252540","https://openalex.org/W2001725666","https://openalex.org/W2028179039","https://openalex.org/W2062627774","https://openalex.org/W2119297468","https://openalex.org/W2132729131","https://openalex.org/W2140550763","https://openalex.org/W2155234523","https://openalex.org/W2318556048","https://openalex.org/W2400824646","https://openalex.org/W2532139375","https://openalex.org/W2540649257","https://openalex.org/W2553148565","https://openalex.org/W2605240226","https://openalex.org/W2888696155","https://openalex.org/W4241311960"],"related_works":["https://openalex.org/W4391375266","https://openalex.org/W2748952813","https://openalex.org/W2935759653","https://openalex.org/W3105167352","https://openalex.org/W54078636","https://openalex.org/W2954470139","https://openalex.org/W1501425562","https://openalex.org/W2902782467","https://openalex.org/W3084825885","https://openalex.org/W2298861036"],"abstract_inverted_index":{"A":[0],"simulation-based":[1],"systematical":[2],"investigation":[3],"of":[4,30,36,41,60,86,105,114],"vertical":[5],"super-thin":[6],"body":[7],"(VSTB)":[8],"MOSFET's":[9],"architectural":[10],"parameters'":[11,32],"effect":[12],"on":[13,34,67],"its":[14],"electrical":[15],"characteristics":[16],"was":[17,80],"performed":[18],"using":[19],"3-D":[20],"TCAD":[21],"Sentaurus":[22],"tool":[23],"in":[24,43,56,83,112],"order":[25],"to":[26],"build":[27],"an":[28],"understanding":[29],"design":[31],"role":[33],"nature":[35],"device":[37,45,49,115],"electrostatics.":[38],"The":[39],"origin":[40],"changes":[42],"the":[44,84,103],"performance":[46],"for":[47],"each":[48],"parameter":[50],"variation":[51],"has":[52,99],"been":[53,100],"explained":[54,101],"precisely":[55],"this":[57],"work.":[58],"Influence":[59],"dual":[61],"material":[62],"gate":[63],"(DMG)":[64],"VSTB":[65],"FET":[66],"on-to-off":[68],"current":[69],"ratio":[70],"(I":[71],"<sub":[72,76,88,92],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[73,77,89,93],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">ON</sub>":[74,90],"/I":[75,91],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">OFF</sub>":[78,94],")":[79],"studied.":[81],"Improvement":[82],"value":[85],"I":[87],"and":[95,109,117],"subthreshold":[96],"swing":[97],"(SS)":[98],"with":[102],"help":[104],"electron":[106],"density,":[107],"mobility,":[108],"velocity":[110],"variations":[111],"case":[113],"off":[116],"on-states.":[118]},"counts_by_year":[{"year":2022,"cited_by_count":3},{"year":2021,"cited_by_count":4}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}