{"id":"https://openalex.org/W2905569248","doi":"https://doi.org/10.1109/ssd.2018.8570462","title":"Memristor Based Programmable Current Reference Generator","display_name":"Memristor Based Programmable Current Reference Generator","publication_year":2018,"publication_date":"2018-03-01","ids":{"openalex":"https://openalex.org/W2905569248","doi":"https://doi.org/10.1109/ssd.2018.8570462","mag":"2905569248"},"language":"en","primary_location":{"id":"doi:10.1109/ssd.2018.8570462","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ssd.2018.8570462","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 15th International Multi-Conference on Systems, Signals & Devices (SSD)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5033446090","display_name":"Mohamed A. Bahloul","orcid":"https://orcid.org/0000-0002-4510-8029"},"institutions":[{"id":"https://openalex.org/I71920554","display_name":"King Abdullah University of Science and Technology","ror":"https://ror.org/01q3tbs38","country_code":"SA","type":"education","lineage":["https://openalex.org/I71920554"]}],"countries":["SA"],"is_corresponding":true,"raw_author_name":"Mohamed A. Bahloul","raw_affiliation_strings":["Electrical Engineering, King Abdullah University of Science and Technology, Thuwal, Saudi Arabia"],"affiliations":[{"raw_affiliation_string":"Electrical Engineering, King Abdullah University of Science and Technology, Thuwal, Saudi Arabia","institution_ids":["https://openalex.org/I71920554"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5088940929","display_name":"Mariem Bouraoui","orcid":"https://orcid.org/0000-0001-6792-3924"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Mariem Bouraoui","raw_affiliation_strings":["METS Research Group, National Engineers School of Sfax, Sfax, Tunisia"],"affiliations":[{"raw_affiliation_string":"METS Research Group, National Engineers School of Sfax, Sfax, Tunisia","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5030406979","display_name":"Imen Barraj","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Imen Barraj","raw_affiliation_strings":["METS Research Group, National Engineers School of Sfax, Sfax, Tunisia"],"affiliations":[{"raw_affiliation_string":"METS Research Group, National Engineers School of Sfax, Sfax, Tunisia","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5084829415","display_name":"Mohammed E. Fouda","orcid":"https://orcid.org/0000-0001-7139-3428"},"institutions":[{"id":"https://openalex.org/I204250578","display_name":"University of California, Irvine","ror":"https://ror.org/04gyf1771","country_code":"US","type":"education","lineage":["https://openalex.org/I204250578"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Mohammed E. Fouda","raw_affiliation_strings":["Electrical Engineering and Computer Science Dept., University of California-Irvine, CA, USA"],"affiliations":[{"raw_affiliation_string":"Electrical Engineering and Computer Science Dept., University of California-Irvine, CA, USA","institution_ids":["https://openalex.org/I204250578"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5055124358","display_name":"Mohamed Masmoudi","orcid":"https://orcid.org/0000-0002-1571-4386"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Mohamed Masmoudi","raw_affiliation_strings":["METS Research Group, National Engineers School of Sfax, Sfax, Tunisia"],"affiliations":[{"raw_affiliation_string":"METS Research Group, National Engineers School of Sfax, Sfax, Tunisia","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5033446090"],"corresponding_institution_ids":["https://openalex.org/I71920554"],"apc_list":null,"apc_paid":null,"fwci":0.2575,"has_fulltext":false,"cited_by_count":5,"citation_normalized_percentile":{"value":0.59120944,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"1051","last_page":"1054"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11601","display_name":"Neuroscience and Neural Engineering","score":0.9987999796867371,"subfield":{"id":"https://openalex.org/subfields/2804","display_name":"Cellular and Molecular Neuroscience"},"field":{"id":"https://openalex.org/fields/28","display_name":"Neuroscience"},"domain":{"id":"https://openalex.org/domains/1","display_name":"Life Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9987000226974487,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/memristor","display_name":"Memristor","score":0.8367587327957153},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5742354989051819},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.5656989812850952},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5579313635826111},{"id":"https://openalex.org/keywords/discrete-circuit","display_name":"Discrete circuit","score":0.46688926219940186},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.4661810100078583},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.45406290888786316},{"id":"https://openalex.org/keywords/resistor","display_name":"Resistor","score":0.43019574880599976},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.41708043217658997},{"id":"https://openalex.org/keywords/memistor","display_name":"Memistor","score":0.4127592444419861},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.25832802057266235},{"id":"https://openalex.org/keywords/resistive-random-access-memory","display_name":"Resistive random-access memory","score":0.23795756697654724},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.190431147813797}],"concepts":[{"id":"https://openalex.org/C150072547","wikidata":"https://www.wikidata.org/wiki/Q212923","display_name":"Memristor","level":2,"score":0.8367587327957153},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5742354989051819},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5656989812850952},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5579313635826111},{"id":"https://openalex.org/C188058453","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Discrete circuit","level":4,"score":0.46688926219940186},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.4661810100078583},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.45406290888786316},{"id":"https://openalex.org/C137488568","wikidata":"https://www.wikidata.org/wiki/Q5321","display_name":"Resistor","level":3,"score":0.43019574880599976},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.41708043217658997},{"id":"https://openalex.org/C1895703","wikidata":"https://www.wikidata.org/wiki/Q6034938","display_name":"Memistor","level":4,"score":0.4127592444419861},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.25832802057266235},{"id":"https://openalex.org/C182019814","wikidata":"https://www.wikidata.org/wiki/Q1143830","display_name":"Resistive random-access memory","level":3,"score":0.23795756697654724},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.190431147813797}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/ssd.2018.8570462","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ssd.2018.8570462","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 15th International Multi-Conference on Systems, Signals & Devices (SSD)","raw_type":"proceedings-article"},{"id":"pmh:oai:repository.kaust.edu.sa:10754/630705","is_oa":false,"landing_page_url":"http://hdl.handle.net/10754/630705","pdf_url":null,"source":{"id":"https://openalex.org/S4306401596","display_name":"King Abdullah University of Science and Technology Repository (King Abdullah University of Science and Technology)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I71920554","host_organization_name":"King Abdullah University of Science and Technology","host_organization_lineage":["https://openalex.org/I71920554"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"Conference Paper"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.8100000023841858,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":10,"referenced_works":["https://openalex.org/W1578783943","https://openalex.org/W2018774711","https://openalex.org/W2030892040","https://openalex.org/W2098944725","https://openalex.org/W2121416362","https://openalex.org/W2141071915","https://openalex.org/W2493028547","https://openalex.org/W2760230810","https://openalex.org/W2761676849","https://openalex.org/W2774971648"],"related_works":["https://openalex.org/W2111892130","https://openalex.org/W4317665987","https://openalex.org/W3031966903","https://openalex.org/W3082575083","https://openalex.org/W4386159386","https://openalex.org/W1981484129","https://openalex.org/W3082198935","https://openalex.org/W2807813071","https://openalex.org/W2803640254","https://openalex.org/W2136811319"],"abstract_inverted_index":{"Current":[0],"reference":[1,19,28,60,112],"circuits":[2],"are":[3,21,32,98,141],"widely":[4],"used":[5,57,84,106,135],"in":[6,34,58,107],"analog":[7,36],"integrated":[8],"circuit":[9,53,63,89,97,103,121,139],"design.":[10],"However,":[11],"due":[12,38,128],"to":[13,39,73,85,113,129],"PVT":[14],"and":[15,42,69],"aging":[16],"variations,":[17],"the":[18,27,40,75,78,87,96,101,108,130,134],"currents":[20],"mostly":[22],"affected":[23],"which":[24],"requires":[25],"reprogramming":[26],"circuit.":[29],"Recently,":[30],"memristors":[31],"investigated":[33],"many":[35],"applications":[37],"programmability":[41],"non-volatility.":[43],"In":[44],"this":[45],"paper,":[46],"we":[47],"introduce":[48],"a":[49,115,123],"simple":[50],"programmable":[51,116],"memristor-based":[52],"that":[54],"can":[55],"be":[56],"current":[59,111,117,125],"generators.":[61],"The":[62,91,119],"is":[64,83],"based":[65],"on":[66],"one":[67,70],"memristor":[68,81,136],"CMOS":[71,146],"transistor":[72],"tune":[74],"resistance":[76],"of":[77,133],"memristor.":[79],"VTEAM":[80],"model":[82],"study":[86],"proposed":[88,102],"programmability.":[90],"necessary":[92],"tuning":[93,126],"conditions":[94],"for":[95],"discussed.":[99],"Then,":[100],"have":[104],"been":[105],"well-known":[109],"Beta-Multiplier":[110],"generate":[114],"reference.":[118],"designed":[120],"has":[122],"reasonable":[124],"range":[127,132],"limited":[131],"model.":[137],"Different":[138],"simulations":[140],"provided":[142],"using":[143],"ST":[144],"65nm":[145],"Technology.":[147]},"counts_by_year":[{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2019,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}