{"id":"https://openalex.org/W1603322618","doi":"https://doi.org/10.1109/mipro.2015.7160233","title":"Impact of the emitter length scaling on electrical characteristics of horizontal current bipolar transistor with single polysilicon region","display_name":"Impact of the emitter length scaling on electrical characteristics of horizontal current bipolar transistor with single polysilicon region","publication_year":2015,"publication_date":"2015-05-01","ids":{"openalex":"https://openalex.org/W1603322618","doi":"https://doi.org/10.1109/mipro.2015.7160233","mag":"1603322618"},"language":"en","primary_location":{"id":"doi:10.1109/mipro.2015.7160233","is_oa":false,"landing_page_url":"https://doi.org/10.1109/mipro.2015.7160233","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 38th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5082319901","display_name":"M. Kori\u010di\u0107","orcid":"https://orcid.org/0000-0001-9886-5413"},"institutions":[{"id":"https://openalex.org/I181343428","display_name":"University of Zagreb","ror":"https://ror.org/00mv6sv71","country_code":"HR","type":"education","lineage":["https://openalex.org/I181343428"]}],"countries":["HR"],"is_corresponding":true,"raw_author_name":"M. Koricic","raw_affiliation_strings":["Faculty of Electrical Engineering and Computing, University of Zagreb, Zagreb, Croatia","University of Zagreb, Faculty of Electrical Engineering and Computing, Croatia#TAB#"],"affiliations":[{"raw_affiliation_string":"Faculty of Electrical Engineering and Computing, University of Zagreb, Zagreb, Croatia","institution_ids":["https://openalex.org/I181343428"]},{"raw_affiliation_string":"University of Zagreb, Faculty of Electrical Engineering and Computing, Croatia#TAB#","institution_ids":["https://openalex.org/I181343428"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5075539209","display_name":"Josip \u017dilak","orcid":"https://orcid.org/0000-0001-5083-7878"},"institutions":[{"id":"https://openalex.org/I181343428","display_name":"University of Zagreb","ror":"https://ror.org/00mv6sv71","country_code":"HR","type":"education","lineage":["https://openalex.org/I181343428"]}],"countries":["HR"],"is_corresponding":false,"raw_author_name":"J. Zilak","raw_affiliation_strings":["Faculty of Electrical Engineering and Computing, University of Zagreb, Zagreb, Croatia","University of Zagreb, Faculty of Electrical Engineering and Computing, Croatia#TAB#"],"affiliations":[{"raw_affiliation_string":"Faculty of Electrical Engineering and Computing, University of Zagreb, Zagreb, Croatia","institution_ids":["https://openalex.org/I181343428"]},{"raw_affiliation_string":"University of Zagreb, Faculty of Electrical Engineering and Computing, Croatia#TAB#","institution_ids":["https://openalex.org/I181343428"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5061642935","display_name":"Tomislav Suligoj","orcid":null},"institutions":[{"id":"https://openalex.org/I181343428","display_name":"University of Zagreb","ror":"https://ror.org/00mv6sv71","country_code":"HR","type":"education","lineage":["https://openalex.org/I181343428"]}],"countries":["HR"],"is_corresponding":false,"raw_author_name":"T. Suligoj","raw_affiliation_strings":["Faculty of Electrical Engineering and Computing, University of Zagreb, Zagreb, Croatia","University of Zagreb, Faculty of Electrical Engineering and Computing, Croatia#TAB#"],"affiliations":[{"raw_affiliation_string":"Faculty of Electrical Engineering and Computing, University of Zagreb, Zagreb, Croatia","institution_ids":["https://openalex.org/I181343428"]},{"raw_affiliation_string":"University of Zagreb, Faculty of Electrical Engineering and Computing, Croatia#TAB#","institution_ids":["https://openalex.org/I181343428"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5082319901"],"corresponding_institution_ids":["https://openalex.org/I181343428"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.03447989,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"31","last_page":"36"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/common-emitter","display_name":"Common emitter","score":0.9395754337310791},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.721805989742279},{"id":"https://openalex.org/keywords/bipolar-junction-transistor","display_name":"Bipolar junction transistor","score":0.6792283058166504},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6302570104598999},{"id":"https://openalex.org/keywords/heterostructure-emitter-bipolar-transistor","display_name":"Heterostructure-emitter bipolar transistor","score":0.596738874912262},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5939646363258362},{"id":"https://openalex.org/keywords/current","display_name":"Current (fluid)","score":0.5919909477233887},{"id":"https://openalex.org/keywords/scaling","display_name":"Scaling","score":0.5741914510726929},{"id":"https://openalex.org/keywords/current-density","display_name":"Current density","score":0.4131242632865906},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.38756290078163147},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.17674845457077026},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1416301429271698},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.1372380256652832}],"concepts":[{"id":"https://openalex.org/C46918542","wikidata":"https://www.wikidata.org/wiki/Q1648344","display_name":"Common emitter","level":2,"score":0.9395754337310791},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.721805989742279},{"id":"https://openalex.org/C23061349","wikidata":"https://www.wikidata.org/wiki/Q188946","display_name":"Bipolar junction transistor","level":4,"score":0.6792283058166504},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6302570104598999},{"id":"https://openalex.org/C58127512","wikidata":"https://www.wikidata.org/wiki/Q5747796","display_name":"Heterostructure-emitter bipolar transistor","level":5,"score":0.596738874912262},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5939646363258362},{"id":"https://openalex.org/C148043351","wikidata":"https://www.wikidata.org/wiki/Q4456944","display_name":"Current (fluid)","level":2,"score":0.5919909477233887},{"id":"https://openalex.org/C99844830","wikidata":"https://www.wikidata.org/wiki/Q102441924","display_name":"Scaling","level":2,"score":0.5741914510726929},{"id":"https://openalex.org/C207740977","wikidata":"https://www.wikidata.org/wiki/Q234072","display_name":"Current density","level":2,"score":0.4131242632865906},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.38756290078163147},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.17674845457077026},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1416301429271698},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.1372380256652832},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/mipro.2015.7160233","is_oa":false,"landing_page_url":"https://doi.org/10.1109/mipro.2015.7160233","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 38th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.8500000238418579}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":10,"referenced_works":["https://openalex.org/W564905336","https://openalex.org/W1606695234","https://openalex.org/W1661368752","https://openalex.org/W1851526533","https://openalex.org/W1979293181","https://openalex.org/W2074529906","https://openalex.org/W2095594381","https://openalex.org/W2128089256","https://openalex.org/W2142888808","https://openalex.org/W2171449901"],"related_works":["https://openalex.org/W2185874911","https://openalex.org/W2184349518","https://openalex.org/W1981729447","https://openalex.org/W2043970876","https://openalex.org/W2076422391","https://openalex.org/W2025633334","https://openalex.org/W2069256397","https://openalex.org/W2055740555","https://openalex.org/W2027422173","https://openalex.org/W1970807543"],"abstract_inverted_index":{"Emitter":[0],"length":[1,58],"scaling":[2],"of":[3,67,114],"HCBT":[4],"with":[5,15,55,121],"single":[6],"polysilicon":[7],"region":[8,87],"is":[9,24,73,117],"investigated":[10],"by":[11,44,107],"3D":[12],"device":[13],"simulations":[14],"the":[16,19,36,56,68,85,90,95],"emphasis":[17],"on":[18,35],"high":[20],"frequency":[21,72],"characteristics.":[22],"It":[23],"shown":[25],"that":[26,52],"collector":[27,86,100],"current":[28,82,91],"and":[29,59,93,111],"junction":[30],"capacitances":[31],"have":[32],"linear":[33],"dependence":[34],"emitter":[37,57,77,124],"length.":[38],"Collector":[39],"resistance":[40],"can":[41],"be":[42,105],"represented":[43],"two":[45],"components":[46],"which":[47,63,88],"appear":[48],"in":[49,84],"parallel,":[50],"one":[51],"scales":[53],"proportionally":[54],"a":[60],"constant":[61],"part":[62],"describes":[64],"lateral":[65],"portion":[66],"extrinsic":[69],"transistor.":[70],"Cut-off":[71],"improved":[74],"for":[75,119],"small":[76,123],"area":[78],"devices":[79],"due":[80],"to":[81],"spreading":[83],"reduces":[89],"density":[92],"causes":[94],"base":[96],"push-out":[97],"at":[98],"higher":[99],"currents.":[101],"The":[102],"effect":[103],"cannot":[104],"captured":[106],"scalable":[108],"transistor":[109],"model":[110,115],"separate":[112],"set":[113],"parameters":[116],"needed":[118],"transistors":[120],"very":[122],"size.":[125]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}
