{"id":"https://openalex.org/W2100516830","doi":"https://doi.org/10.1109/jssc.2011.2164731","title":"A 1.2 V 12.8 GB/s 2 Gb Mobile Wide-I/O DRAM With 4 $\\times$ 128 I/Os Using TSV Based Stacking","display_name":"A 1.2 V 12.8 GB/s 2 Gb Mobile Wide-I/O DRAM With 4 $\\times$ 128 I/Os Using TSV Based Stacking","publication_year":2011,"publication_date":"2011-09-28","ids":{"openalex":"https://openalex.org/W2100516830","doi":"https://doi.org/10.1109/jssc.2011.2164731","mag":"2100516830"},"language":"en","primary_location":{"id":"doi:10.1109/jssc.2011.2164731","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2011.2164731","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5055194823","display_name":"Jung\u2010Sik Kim","orcid":"https://orcid.org/0000-0002-3696-7251"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Jung-Sik Kim","raw_affiliation_strings":["DRAM Design Team, Samsung Electronics, Company, Ltd., Hwasung-city, Gyeonggi-Do, Korea","Samsung Electronics, Hwasung Korea"],"affiliations":[{"raw_affiliation_string":"DRAM Design Team, Samsung Electronics, Company, Ltd., Hwasung-city, Gyeonggi-Do, Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electronics, Hwasung Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5042962142","display_name":"Chi Sung Oh","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Chi Sung Oh","raw_affiliation_strings":["DRAM Design Team, Samsung Electronics, Company, Ltd., Hwasung-city, Gyeonggi-Do, Korea","Samsung Electronics, Hwasung Korea"],"affiliations":[{"raw_affiliation_string":"DRAM Design Team, Samsung Electronics, Company, Ltd., Hwasung-city, Gyeonggi-Do, Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electronics, Hwasung Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101811609","display_name":"Hocheol Lee","orcid":"https://orcid.org/0000-0001-7436-7567"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hocheol Lee","raw_affiliation_strings":["DRAM Design Team, Samsung Electronics, Company, Ltd., Hwasung-city, Gyeonggi-Do, Korea","Samsung Electronics, Hwasung Korea"],"affiliations":[{"raw_affiliation_string":"DRAM Design Team, Samsung Electronics, Company, Ltd., Hwasung-city, Gyeonggi-Do, Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electronics, Hwasung Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101991475","display_name":"Donghyuk Lee","orcid":"https://orcid.org/0009-0001-9572-5391"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Donghyuk Lee","raw_affiliation_strings":["DRAM Design Team, Samsung Electronics, Company, Ltd., Hwasung-city, Gyeonggi-Do, Korea","Samsung Electronics, Hwasung Korea"],"affiliations":[{"raw_affiliation_string":"DRAM Design Team, Samsung Electronics, Company, Ltd., Hwasung-city, Gyeonggi-Do, Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electronics, Hwasung Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110647394","display_name":"Hyong-Ryol Hwang","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hyong Ryol Hwang","raw_affiliation_strings":["DRAM Design Team, Samsung Electronics, Company, Ltd., Hwasung-city, Gyeonggi-Do, Korea","Samsung Electronics, Hwasung Korea"],"affiliations":[{"raw_affiliation_string":"DRAM Design Team, Samsung Electronics, Company, Ltd., Hwasung-city, Gyeonggi-Do, Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electronics, Hwasung Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5027074511","display_name":"Sooman Hwang","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sooman Hwang","raw_affiliation_strings":["DRAM Design Team, Samsung Electronics, Company, Ltd., Hwasung-city, Gyeonggi-Do, Korea","Samsung Electronics, Hwasung Korea"],"affiliations":[{"raw_affiliation_string":"DRAM Design Team, Samsung Electronics, Company, Ltd., Hwasung-city, Gyeonggi-Do, Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electronics, Hwasung Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5072393272","display_name":"Byongwook Na","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Byongwook Na","raw_affiliation_strings":["DRAM Design Team, Samsung Electronics, Company, Ltd., Hwasung-city, Gyeonggi-Do, Korea","Samsung Electronics, Hwasung Korea"],"affiliations":[{"raw_affiliation_string":"DRAM Design Team, Samsung Electronics, Company, Ltd., Hwasung-city, Gyeonggi-Do, Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electronics, Hwasung Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111883131","display_name":"Joung-Wook Moon","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Joungwook Moon","raw_affiliation_strings":["DRAM Design Team, Samsung Electronics, Company, Ltd., Hwasung-city, Gyeonggi-Do, Korea","Samsung Electronics, Hwasung Korea"],"affiliations":[{"raw_affiliation_string":"DRAM Design Team, Samsung Electronics, Company, Ltd., Hwasung-city, Gyeonggi-Do, Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electronics, Hwasung Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5061945242","display_name":"Jin-Guk Kim","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jin-Guk Kim","raw_affiliation_strings":["DRAM Design Team, Samsung Electronics, Company, Ltd., Hwasung-city, Gyeonggi-Do, Korea","Samsung Electronics, Hwasung Korea"],"affiliations":[{"raw_affiliation_string":"DRAM Design Team, Samsung Electronics, Company, Ltd., Hwasung-city, Gyeonggi-Do, Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electronics, Hwasung Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102853839","display_name":"Hanna Park","orcid":"https://orcid.org/0009-0009-9209-5572"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hanna Park","raw_affiliation_strings":["DRAM Design Team, Samsung Electronics, Company, Ltd., Hwasung-city, Gyeonggi-Do, Korea","Samsung Electronics, Hwasung Korea"],"affiliations":[{"raw_affiliation_string":"DRAM Design Team, Samsung Electronics, Company, Ltd., Hwasung-city, Gyeonggi-Do, Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electronics, Hwasung Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5044627458","display_name":"Jang-Woo Ryu","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jang-Woo Ryu","raw_affiliation_strings":["DRAM Design Team, Samsung Electronics, Company, Ltd., Hwasung-city, Gyeonggi-Do, Korea","Samsung Electronics, Hwasung Korea"],"affiliations":[{"raw_affiliation_string":"DRAM Design Team, Samsung Electronics, Company, Ltd., Hwasung-city, Gyeonggi-Do, Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electronics, Hwasung Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5070441956","display_name":"Kiwon Park","orcid":"https://orcid.org/0000-0002-3188-000X"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kiwon Park","raw_affiliation_strings":["DRAM Design Team, Samsung Electronics, Company, Ltd., Hwasung-city, Gyeonggi-Do, Korea","Samsung Electronics, Hwasung Korea"],"affiliations":[{"raw_affiliation_string":"DRAM Design Team, Samsung Electronics, Company, Ltd., Hwasung-city, Gyeonggi-Do, Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electronics, Hwasung Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112828254","display_name":"Sang-Kyu Kang","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sang Kyu Kang","raw_affiliation_strings":["DRAM Design Team, Samsung Electronics, Company, Ltd., Hwasung-city, Gyeonggi-Do, Korea","Samsung Electronics, Hwasung Korea"],"affiliations":[{"raw_affiliation_string":"DRAM Design Team, Samsung Electronics, Company, Ltd., Hwasung-city, Gyeonggi-Do, Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electronics, Hwasung Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100373077","display_name":"SoYoung Kim","orcid":"https://orcid.org/0000-0001-8901-3649"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"So-Young Kim","raw_affiliation_strings":["DRAM Design Team, Samsung Electronics, Company, Ltd., Hwasung-city, Gyeonggi-Do, Korea","Samsung Electronics, Hwasung Korea"],"affiliations":[{"raw_affiliation_string":"DRAM Design Team, Samsung Electronics, Company, Ltd., Hwasung-city, Gyeonggi-Do, Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electronics, Hwasung Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100670367","display_name":"Hoyoung Kim","orcid":"https://orcid.org/0000-0001-5148-5026"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hoyoung Kim","raw_affiliation_strings":["DRAM Design Team, Samsung Electronics, Company, Ltd., Hwasung-city, Gyeonggi-Do, Korea","Samsung Electronics, Hwasung Korea"],"affiliations":[{"raw_affiliation_string":"DRAM Design Team, Samsung Electronics, Company, Ltd., Hwasung-city, Gyeonggi-Do, Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electronics, Hwasung Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5054300110","display_name":"Jong-Min Bang","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jong-Min Bang","raw_affiliation_strings":["DRAM Design Team, Samsung Electronics, Company, Ltd., Hwasung-city, Gyeonggi-Do, Korea","Samsung Electronics, Hwasung Korea"],"affiliations":[{"raw_affiliation_string":"DRAM Design Team, Samsung Electronics, Company, Ltd., Hwasung-city, Gyeonggi-Do, Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electronics, Hwasung Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5084599152","display_name":"Hyunyoon Cho","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hyunyoon Cho","raw_affiliation_strings":["DRAM Design Team, Samsung Electronics, Company, Ltd., Hwasung-city, Gyeonggi-Do, Korea","Samsung Electronics, Hwasung Korea"],"affiliations":[{"raw_affiliation_string":"DRAM Design Team, Samsung Electronics, Company, Ltd., Hwasung-city, Gyeonggi-Do, Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electronics, Hwasung Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103559503","display_name":"Minsoo Jang","orcid":"https://orcid.org/0009-0004-7155-7639"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Minsoo Jang","raw_affiliation_strings":["DRAM Design Team, Samsung Electronics, Company, Ltd., Hwasung-city, Gyeonggi-Do, Korea","Samsung Electronics, Hwasung Korea"],"affiliations":[{"raw_affiliation_string":"DRAM Design Team, Samsung Electronics, Company, Ltd., Hwasung-city, Gyeonggi-Do, Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electronics, Hwasung Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5114256101","display_name":"Cheolmin Han","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Cheolmin Han","raw_affiliation_strings":["DRAM Design Team, Samsung Electronics, Company, Ltd., Hwasung-city, Gyeonggi-Do, Korea","Samsung Electronics, Hwasung Korea"],"affiliations":[{"raw_affiliation_string":"DRAM Design Team, Samsung Electronics, Company, Ltd., Hwasung-city, Gyeonggi-Do, Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electronics, Hwasung Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5098093462","display_name":"Jung-Bae LeeLee","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jung-Bae LeeLee","raw_affiliation_strings":["DRAM Design Team, Memory Division, Samsung Electronics, Company, Ltd., Hwasung-city, Gyeonggi-Do, Korea","Samsung Electronics, Hwasung Korea"],"affiliations":[{"raw_affiliation_string":"DRAM Design Team, Memory Division, Samsung Electronics, Company, Ltd., Hwasung-city, Gyeonggi-Do, Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electronics, Hwasung Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110755494","display_name":"Joo Sun Choi","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Joo Sun Choi","raw_affiliation_strings":["DRAM Design Team, Samsung Electronics, Company, Ltd., Hwasung-city, Gyeonggi-Do, Korea","Samsung Electronics, Hwasung Korea"],"affiliations":[{"raw_affiliation_string":"DRAM Design Team, Samsung Electronics, Company, Ltd., Hwasung-city, Gyeonggi-Do, Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electronics, Hwasung Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5112318178","display_name":"Young-Hyun Jun","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Young-Hyun Jun","raw_affiliation_strings":["Flash Product and Technology, Memory Division, Samsung Electronics, Company, Ltd., Hwasung-city, Gyeonggi-Do, Korea","Samsung Electronics, Hwasung Korea"],"affiliations":[{"raw_affiliation_string":"Flash Product and Technology, Memory Division, Samsung Electronics, Company, Ltd., Hwasung-city, Gyeonggi-Do, Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electronics, Hwasung Korea","institution_ids":["https://openalex.org/I2250650973"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":22,"corresponding_author_ids":["https://openalex.org/A5055194823"],"corresponding_institution_ids":["https://openalex.org/I2250650973"],"apc_list":null,"apc_paid":null,"fwci":22.9451,"has_fulltext":false,"cited_by_count":203,"citation_normalized_percentile":{"value":0.99633212,"is_in_top_1_percent":true,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":90,"max":100},"biblio":{"volume":"47","issue":"1","first_page":"107","last_page":"116"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11527","display_name":"3D IC and TSV technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11527","display_name":"3D IC and TSV technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10460","display_name":"Electronic Packaging and Soldering Technologies","score":0.9966999888420105,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/dram","display_name":"Dram","score":0.8770240545272827},{"id":"https://openalex.org/keywords/stacking","display_name":"Stacking","score":0.6219533681869507},{"id":"https://openalex.org/keywords/chip","display_name":"Chip","score":0.5876771211624146},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5645831227302551},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4744877815246582},{"id":"https://openalex.org/keywords/bandwidth","display_name":"Bandwidth (computing)","score":0.47192835807800293},{"id":"https://openalex.org/keywords/block","display_name":"Block (permutation group theory)","score":0.4423847794532776},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.43414008617401123},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.40536367893218994},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.39897918701171875},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3538691997528076},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3468985855579376},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.24070069193840027},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.20555120706558228},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.12270620465278625},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.09613236784934998}],"concepts":[{"id":"https://openalex.org/C7366592","wikidata":"https://www.wikidata.org/wiki/Q1255620","display_name":"Dram","level":2,"score":0.8770240545272827},{"id":"https://openalex.org/C33347731","wikidata":"https://www.wikidata.org/wiki/Q285210","display_name":"Stacking","level":2,"score":0.6219533681869507},{"id":"https://openalex.org/C165005293","wikidata":"https://www.wikidata.org/wiki/Q1074500","display_name":"Chip","level":2,"score":0.5876771211624146},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5645831227302551},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4744877815246582},{"id":"https://openalex.org/C2776257435","wikidata":"https://www.wikidata.org/wiki/Q1576430","display_name":"Bandwidth (computing)","level":2,"score":0.47192835807800293},{"id":"https://openalex.org/C2777210771","wikidata":"https://www.wikidata.org/wiki/Q4927124","display_name":"Block (permutation group theory)","level":2,"score":0.4423847794532776},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.43414008617401123},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.40536367893218994},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.39897918701171875},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3538691997528076},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3468985855579376},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.24070069193840027},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.20555120706558228},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.12270620465278625},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.09613236784934998},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.0},{"id":"https://openalex.org/C46141821","wikidata":"https://www.wikidata.org/wiki/Q209402","display_name":"Nuclear magnetic resonance","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/jssc.2011.2164731","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2011.2164731","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.7200000286102295,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":10,"referenced_works":["https://openalex.org/W1527183359","https://openalex.org/W1998409614","https://openalex.org/W2028504835","https://openalex.org/W2034975188","https://openalex.org/W2107304970","https://openalex.org/W2113837812","https://openalex.org/W2134727012","https://openalex.org/W2140035878","https://openalex.org/W2546379052","https://openalex.org/W6649865103"],"related_works":["https://openalex.org/W2899084033","https://openalex.org/W2056505473","https://openalex.org/W2037965222","https://openalex.org/W1990538797","https://openalex.org/W1981823592","https://openalex.org/W2362222286","https://openalex.org/W2140848062","https://openalex.org/W2390551782","https://openalex.org/W3094920005","https://openalex.org/W2389537118"],"abstract_inverted_index":{"A":[0],"1.2":[1],"V":[2],"1":[3],"Gb":[4],"mobile":[5],"SDRAM,":[6],"having":[7],"4":[8,29],"channels":[9],"with":[10,17,65,74],"512":[11],"DQ":[12],"pins":[13],"has":[14,83],"been":[15,50,84],"developed":[16],"50":[18],"nm":[19],"technology.":[20],"It":[21],"exhibits":[22],"330.6":[23],"mW":[24],"read":[25],"operating":[26],"power":[27],"during":[28],"channel":[30],"operation,":[31],"achieving":[32],"12.8":[33],"GB/s":[34],"data":[35],"bandwidth.":[36],"Test":[37],"correlation":[38],"techniques":[39],"to":[40,60],"verify":[41],"functions":[42],"through":[43],"micro":[44],"bumps":[45],"and":[46,78,86,101],"test":[47],"pads":[48],"have":[49],"developed.":[51],"Block":[52],"based":[53],"dual":[54],"period":[55],"refresh":[56,63],"scheme":[57],"is":[58],"applied":[59],"reduce":[61],"self":[62],"current":[64],"minimum":[66],"chip":[67],"size":[68],"burden.":[69],"Stacking":[70],"of":[71],"2":[72],"dies":[73],"7.5":[75],"\u03bcm":[76,80],"diameter":[77],"40":[79],"pitch":[81],"TSVs":[82],"fabricated":[85],"tested,":[87],"which":[88],"results":[89],"in":[90,97],"76%":[91],"overall":[92],"package":[93],"yield":[94],"without":[95],"difference":[96],"performances":[98],"between":[99],"top":[100],"bottom":[102],"die.":[103]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":3},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":4},{"year":2021,"cited_by_count":6},{"year":2020,"cited_by_count":10},{"year":2019,"cited_by_count":7},{"year":2018,"cited_by_count":12},{"year":2017,"cited_by_count":18},{"year":2016,"cited_by_count":19},{"year":2015,"cited_by_count":37},{"year":2014,"cited_by_count":32},{"year":2013,"cited_by_count":30},{"year":2012,"cited_by_count":17}],"updated_date":"2026-04-04T16:13:02.066488","created_date":"2025-10-10T00:00:00"}