{"id":"https://openalex.org/W1964845328","doi":"https://doi.org/10.1109/jssc.2005.847531","title":"4-Mb MOSFET-selected /spl mu/trench phase-change memory experimental chip","display_name":"4-Mb MOSFET-selected /spl mu/trench phase-change memory experimental chip","publication_year":2005,"publication_date":"2005-06-28","ids":{"openalex":"https://openalex.org/W1964845328","doi":"https://doi.org/10.1109/jssc.2005.847531","mag":"1964845328"},"language":"en","primary_location":{"id":"doi:10.1109/jssc.2005.847531","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2005.847531","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5040893925","display_name":"F. Bedeschi","orcid":"https://orcid.org/0000-0002-8315-2119"},"institutions":[{"id":"https://openalex.org/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https://ror.org/053bqv655","country_code":"IT","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210154781"]}],"countries":["IT"],"is_corresponding":true,"raw_author_name":"F. Bedeschi","raw_affiliation_strings":["Memory Product Group, STMicroelectronics, Agrate-Brianza, Italy"],"affiliations":[{"raw_affiliation_string":"Memory Product Group, STMicroelectronics, Agrate-Brianza, Italy","institution_ids":["https://openalex.org/I4210154781"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111947979","display_name":"R. Bez","orcid":null},"institutions":[{"id":"https://openalex.org/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https://ror.org/053bqv655","country_code":"IT","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210154781"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"R. Bez","raw_affiliation_strings":["Central Research & Development, STMicroelectronics, Agrate-Brianza, Italy"],"affiliations":[{"raw_affiliation_string":"Central Research & Development, STMicroelectronics, Agrate-Brianza, Italy","institution_ids":["https://openalex.org/I4210154781"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5044257538","display_name":"C. Boffino","orcid":null},"institutions":[{"id":"https://openalex.org/I25217355","display_name":"University of Pavia","ror":"https://ror.org/00s6t1f81","country_code":"IT","type":"education","lineage":["https://openalex.org/I25217355"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"C. Boffino","raw_affiliation_strings":["Department of Electronics, University of Pavia, Pavia, Italy"],"affiliations":[{"raw_affiliation_string":"Department of Electronics, University of Pavia, Pavia, Italy","institution_ids":["https://openalex.org/I25217355"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5002715573","display_name":"Edoardo Bonizzoni","orcid":"https://orcid.org/0000-0002-8398-8506"},"institutions":[{"id":"https://openalex.org/I25217355","display_name":"University of Pavia","ror":"https://ror.org/00s6t1f81","country_code":"IT","type":"education","lineage":["https://openalex.org/I25217355"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"E. Bonizzoni","raw_affiliation_strings":["Department of Electronics, University of Pavia, Pavia, Italy"],"affiliations":[{"raw_affiliation_string":"Department of Electronics, University of Pavia, Pavia, Italy","institution_ids":["https://openalex.org/I25217355"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5004361570","display_name":"E. Buda","orcid":null},"institutions":[{"id":"https://openalex.org/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https://ror.org/053bqv655","country_code":"IT","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210154781"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"E.C. Buda","raw_affiliation_strings":["Memory Product Group, STMicroelectronics, Agrate-Brianza, Italy"],"affiliations":[{"raw_affiliation_string":"Memory Product Group, STMicroelectronics, Agrate-Brianza, Italy","institution_ids":["https://openalex.org/I4210154781"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5029830629","display_name":"G. Casagrande","orcid":null},"institutions":[{"id":"https://openalex.org/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https://ror.org/053bqv655","country_code":"IT","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210154781"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"G. Casagrande","raw_affiliation_strings":["Memory Product Group, STMicroelectronics, Agrate-Brianza, Italy"],"affiliations":[{"raw_affiliation_string":"Memory Product Group, STMicroelectronics, Agrate-Brianza, Italy","institution_ids":["https://openalex.org/I4210154781"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5060822643","display_name":"L. Costa","orcid":null},"institutions":[{"id":"https://openalex.org/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https://ror.org/053bqv655","country_code":"IT","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210154781"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"L. Costa","raw_affiliation_strings":["Memory Product Group, STMicroelectronics, Agrate-Brianza, Italy"],"affiliations":[{"raw_affiliation_string":"Memory Product Group, STMicroelectronics, Agrate-Brianza, Italy","institution_ids":["https://openalex.org/I4210154781"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5085401619","display_name":"Marco Ferraro","orcid":"https://orcid.org/0000-0001-8186-2769"},"institutions":[{"id":"https://openalex.org/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https://ror.org/053bqv655","country_code":"IT","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210154781"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"M. Ferraro","raw_affiliation_strings":["Memory Product Group, STMicroelectronics, Agrate-Brianza, Italy"],"affiliations":[{"raw_affiliation_string":"Memory Product Group, STMicroelectronics, Agrate-Brianza, Italy","institution_ids":["https://openalex.org/I4210154781"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5023376625","display_name":"Roberto Gastaldi","orcid":null},"institutions":[{"id":"https://openalex.org/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https://ror.org/053bqv655","country_code":"IT","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210154781"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"R. Gastaldi","raw_affiliation_strings":["Memory Product Group, STMicroelectronics, Agrate-Brianza, Italy"],"affiliations":[{"raw_affiliation_string":"Memory Product Group, STMicroelectronics, Agrate-Brianza, Italy","institution_ids":["https://openalex.org/I4210154781"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5024127689","display_name":"O. Khouri","orcid":null},"institutions":[{"id":"https://openalex.org/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https://ror.org/053bqv655","country_code":"IT","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210154781"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"O. Khouri","raw_affiliation_strings":["Memory Product Group, STMicroelectronics, Agrate-Brianza, Italy"],"affiliations":[{"raw_affiliation_string":"Memory Product Group, STMicroelectronics, Agrate-Brianza, Italy","institution_ids":["https://openalex.org/I4210154781"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5007827881","display_name":"F. Ottogalli","orcid":null},"institutions":[{"id":"https://openalex.org/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https://ror.org/053bqv655","country_code":"IT","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210154781"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"F. Ottogalli","raw_affiliation_strings":["Central Research & Development, STMicroelectronics, Agrate-Brianza, Italy"],"affiliations":[{"raw_affiliation_string":"Central Research & Development, STMicroelectronics, Agrate-Brianza, Italy","institution_ids":["https://openalex.org/I4210154781"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5007190679","display_name":"F. Pellizzer","orcid":null},"institutions":[{"id":"https://openalex.org/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https://ror.org/053bqv655","country_code":"IT","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210154781"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"F. Pellizzer","raw_affiliation_strings":["Central Research & Development, STMicroelectronics, Agrate-Brianza, Italy"],"affiliations":[{"raw_affiliation_string":"Central Research & Development, STMicroelectronics, Agrate-Brianza, Italy","institution_ids":["https://openalex.org/I4210154781"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113351652","display_name":"A. Pirovano","orcid":null},"institutions":[{"id":"https://openalex.org/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https://ror.org/053bqv655","country_code":"IT","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210154781"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"A. Pirovano","raw_affiliation_strings":["Central Research & Development, STMicroelectronics, Agrate-Brianza, Italy"],"affiliations":[{"raw_affiliation_string":"Central Research & Development, STMicroelectronics, Agrate-Brianza, Italy","institution_ids":["https://openalex.org/I4210154781"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5073180808","display_name":"Claudio Resta","orcid":"https://orcid.org/0000-0002-5362-7697"},"institutions":[{"id":"https://openalex.org/I25217355","display_name":"University of Pavia","ror":"https://ror.org/00s6t1f81","country_code":"IT","type":"education","lineage":["https://openalex.org/I25217355"]},{"id":"https://openalex.org/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https://ror.org/053bqv655","country_code":"IT","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210154781"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"C. Resta","raw_affiliation_strings":["Memory Product Group, STMicroelectronics, Agrate-Brianza, Italy","Studio di Microelettronica, STMicroelectronics and University of Pavia, Pavia, Italy"],"affiliations":[{"raw_affiliation_string":"Memory Product Group, STMicroelectronics, Agrate-Brianza, Italy","institution_ids":["https://openalex.org/I4210154781"]},{"raw_affiliation_string":"Studio di Microelettronica, STMicroelectronics and University of Pavia, Pavia, Italy","institution_ids":["https://openalex.org/I25217355","https://openalex.org/I4210154781"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5087562135","display_name":"G. Torelli","orcid":"https://orcid.org/0000-0002-9713-2338"},"institutions":[{"id":"https://openalex.org/I25217355","display_name":"University of Pavia","ror":"https://ror.org/00s6t1f81","country_code":"IT","type":"education","lineage":["https://openalex.org/I25217355"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"G. Torelli","raw_affiliation_strings":["Department of Electronics, University of Pavia, Pavia, Italy"],"affiliations":[{"raw_affiliation_string":"Department of Electronics, University of Pavia, Pavia, Italy","institution_ids":["https://openalex.org/I25217355"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5041286158","display_name":"M. Tosi","orcid":null},"institutions":[{"id":"https://openalex.org/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https://ror.org/053bqv655","country_code":"IT","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210154781"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"M. Tosi","raw_affiliation_strings":["Central Research & Development, STMicroelectronics, Agrate-Brianza, Italy"],"affiliations":[{"raw_affiliation_string":"Central Research & Development, STMicroelectronics, Agrate-Brianza, Italy","institution_ids":["https://openalex.org/I4210154781"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":16,"corresponding_author_ids":["https://openalex.org/A5040893925"],"corresponding_institution_ids":["https://openalex.org/I4210154781"],"apc_list":null,"apc_paid":null,"fwci":2.1513,"has_fulltext":false,"cited_by_count":49,"citation_normalized_percentile":{"value":0.86149468,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":99},"biblio":{"volume":"40","issue":"7","first_page":"1557","last_page":"1565"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11315","display_name":"Phase-change materials and chalcogenides","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11315","display_name":"Phase-change materials and chalcogenides","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10306","display_name":"Liquid Crystal Research Advancements","score":0.9821000099182129,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10590","display_name":"Chalcogenide Semiconductor Thin Films","score":0.965499997138977,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/cascode","display_name":"Cascode","score":0.8368207812309265},{"id":"https://openalex.org/keywords/trench","display_name":"Trench","score":0.6693422198295593},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.6552927494049072},{"id":"https://openalex.org/keywords/phase-change-memory","display_name":"Phase-change memory","score":0.6533742547035217},{"id":"https://openalex.org/keywords/flash","display_name":"Flash (photography)","score":0.6284577250480652},{"id":"https://openalex.org/keywords/chip","display_name":"Chip","score":0.6199834942817688},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.581275463104248},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5698830485343933},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4644958972930908},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4640224575996399},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4417254626750946},{"id":"https://openalex.org/keywords/flash-memory","display_name":"Flash memory","score":0.43756037950515747},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3767556846141815},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.3730524182319641},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.325382798910141},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.2280355989933014},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2069942057132721},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.13695430755615234},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.13391268253326416},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.11492791771888733},{"id":"https://openalex.org/keywords/optics","display_name":"Optics","score":0.06477624177932739}],"concepts":[{"id":"https://openalex.org/C2775946640","wikidata":"https://www.wikidata.org/wiki/Q1735017","display_name":"Cascode","level":4,"score":0.8368207812309265},{"id":"https://openalex.org/C155310634","wikidata":"https://www.wikidata.org/wiki/Q1852785","display_name":"Trench","level":3,"score":0.6693422198295593},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.6552927494049072},{"id":"https://openalex.org/C64142963","wikidata":"https://www.wikidata.org/wiki/Q1153902","display_name":"Phase-change memory","level":3,"score":0.6533742547035217},{"id":"https://openalex.org/C2777526259","wikidata":"https://www.wikidata.org/wiki/Q221836","display_name":"Flash (photography)","level":2,"score":0.6284577250480652},{"id":"https://openalex.org/C165005293","wikidata":"https://www.wikidata.org/wiki/Q1074500","display_name":"Chip","level":2,"score":0.6199834942817688},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.581275463104248},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5698830485343933},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4644958972930908},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4640224575996399},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4417254626750946},{"id":"https://openalex.org/C2776531357","wikidata":"https://www.wikidata.org/wiki/Q174077","display_name":"Flash memory","level":2,"score":0.43756037950515747},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3767556846141815},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.3730524182319641},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.325382798910141},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.2280355989933014},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2069942057132721},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.13695430755615234},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.13391268253326416},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.11492791771888733},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.06477624177932739},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/jssc.2005.847531","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2005.847531","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.6600000262260437,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":13,"referenced_works":["https://openalex.org/W1486495540","https://openalex.org/W1523051994","https://openalex.org/W1831441072","https://openalex.org/W1916612470","https://openalex.org/W2081688987","https://openalex.org/W2082398524","https://openalex.org/W2113512876","https://openalex.org/W2126830366","https://openalex.org/W2158426860","https://openalex.org/W2170821637","https://openalex.org/W2543638529","https://openalex.org/W4254007354","https://openalex.org/W6684982254"],"related_works":["https://openalex.org/W2019611465","https://openalex.org/W2116397085","https://openalex.org/W2017101954","https://openalex.org/W2537636062","https://openalex.org/W1594494193","https://openalex.org/W2378293894","https://openalex.org/W2135436866","https://openalex.org/W1994190181","https://openalex.org/W1492907585","https://openalex.org/W2014913374"],"abstract_inverted_index":{"A":[0,26,57],"/spl":[1],"mu/trench":[2],"Phase-Change":[3],"Memory":[4],"(PCM)":[5],"cell":[6,86],"with":[7,44,67,100,113],"MOSFET":[8],"selector":[9],"and":[10,33],"its":[11],"integration":[12],"in":[13,19,109],"a":[14,68],"4-Mb":[15,91],"experimental":[16],"chip":[17],"fabricated":[18],"0.18-/spl":[20],"mu/m":[21],"CMOS":[22,111],"technology":[23,112],"are":[24],"presented.":[25],"cascode":[27],"bitline":[28],"biasing":[29],"scheme":[30],"allows":[31],"read":[32,58],"write":[34,69],"voltages":[35],"to":[36,39,81],"be":[37],"fed":[38],"the":[40,45,90,105],"addressed":[41],"storage":[42],"elements":[43],"required":[46],"accuracy.":[47],"The":[48],"high-performance":[49],"capabilities":[50],"of":[51,61,71,107],"PCM":[52],"cells":[53],"were":[54],"experimentally":[55],"investigated.":[56],"access":[59],"time":[60],"45":[62],"ns":[63],"was":[64],"measured":[65],"together":[66,99],"throughput":[70],"5":[72],"MB/s,":[73],"which":[74],"represents":[75],"an":[76,94],"improved":[77],"performance":[78],"as":[79],"compared":[80],"NOR":[82],"Flash":[83],"memories.":[84],"Programmed":[85],"current":[87],"distributions":[88],"on":[89],"array":[92],"demonstrate":[93],"adequate":[95],"working":[96],"window":[97],"and,":[98],"first":[101],"endurance":[102],"measurements,":[103],"assess":[104],"feasibility":[106],"PCMs":[108],"standard":[110],"few":[114],"additional":[115],"process":[116],"modules.":[117]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2019,"cited_by_count":5},{"year":2016,"cited_by_count":2},{"year":2015,"cited_by_count":4},{"year":2014,"cited_by_count":3},{"year":2013,"cited_by_count":1},{"year":2012,"cited_by_count":8}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}