{"id":"https://openalex.org/W2040518993","doi":"https://doi.org/10.1109/isvdat.2014.6881054","title":"High permittivity spacer effects on junctionless FinFET based circuit/SRAM applications","display_name":"High permittivity spacer effects on junctionless FinFET based circuit/SRAM applications","publication_year":2014,"publication_date":"2014-07-01","ids":{"openalex":"https://openalex.org/W2040518993","doi":"https://doi.org/10.1109/isvdat.2014.6881054","mag":"2040518993"},"language":"en","primary_location":{"id":"doi:10.1109/isvdat.2014.6881054","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isvdat.2014.6881054","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"18th International Symposium on VLSI Design and Test","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5056007806","display_name":"Dilsukh Nehra","orcid":null},"institutions":[{"id":"https://openalex.org/I154851008","display_name":"Indian Institute of Technology Roorkee","ror":"https://ror.org/00582g326","country_code":"IN","type":"education","lineage":["https://openalex.org/I154851008"]}],"countries":["IN"],"is_corresponding":true,"raw_author_name":"Dilsukh Nehra","raw_affiliation_strings":["Microelectronics & VLSI Group, Electronics & Communication Engineering Department Indian Institute of Technology Roorkee, Roorkee, Uttarakhand, India","Electron. & Commun. Eng. Dept., Indian Inst. of Technol., Roorkee, Roorkee, India"],"affiliations":[{"raw_affiliation_string":"Microelectronics & VLSI Group, Electronics & Communication Engineering Department Indian Institute of Technology Roorkee, Roorkee, Uttarakhand, India","institution_ids":["https://openalex.org/I154851008"]},{"raw_affiliation_string":"Electron. & Commun. Eng. Dept., Indian Inst. of Technol., Roorkee, Roorkee, India","institution_ids":["https://openalex.org/I154851008"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5078675823","display_name":"Pankaj Kumar Pal","orcid":"https://orcid.org/0000-0001-6580-0488"},"institutions":[{"id":"https://openalex.org/I154851008","display_name":"Indian Institute of Technology Roorkee","ror":"https://ror.org/00582g326","country_code":"IN","type":"education","lineage":["https://openalex.org/I154851008"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Pankaj Kumar Pal","raw_affiliation_strings":["Microelectronics & VLSI Group, Electronics & Communication Engineering Department Indian Institute of Technology Roorkee, Roorkee, Uttarakhand, India","Electron. & Commun. Eng. Dept., Indian Inst. of Technol., Roorkee, Roorkee, India"],"affiliations":[{"raw_affiliation_string":"Microelectronics & VLSI Group, Electronics & Communication Engineering Department Indian Institute of Technology Roorkee, Roorkee, Uttarakhand, India","institution_ids":["https://openalex.org/I154851008"]},{"raw_affiliation_string":"Electron. & Commun. Eng. Dept., Indian Inst. of Technol., Roorkee, Roorkee, India","institution_ids":["https://openalex.org/I154851008"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5021553938","display_name":"Brajesh Kumar Kaushik","orcid":"https://orcid.org/0000-0002-6414-0032"},"institutions":[{"id":"https://openalex.org/I154851008","display_name":"Indian Institute of Technology Roorkee","ror":"https://ror.org/00582g326","country_code":"IN","type":"education","lineage":["https://openalex.org/I154851008"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"B. K. Kaushik","raw_affiliation_strings":["Microelectronics & VLSI Group, Electronics & Communication Engineering Department Indian Institute of Technology Roorkee, Roorkee, Uttarakhand, India","Electron. & Commun. Eng. Dept., Indian Inst. of Technol., Roorkee, Roorkee, India"],"affiliations":[{"raw_affiliation_string":"Microelectronics & VLSI Group, Electronics & Communication Engineering Department Indian Institute of Technology Roorkee, Roorkee, Uttarakhand, India","institution_ids":["https://openalex.org/I154851008"]},{"raw_affiliation_string":"Electron. & Commun. Eng. Dept., Indian Inst. of Technol., Roorkee, Roorkee, India","institution_ids":["https://openalex.org/I154851008"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5064560509","display_name":"Sudeb Dasgupta","orcid":"https://orcid.org/0000-0002-4044-1594"},"institutions":[{"id":"https://openalex.org/I154851008","display_name":"Indian Institute of Technology Roorkee","ror":"https://ror.org/00582g326","country_code":"IN","type":"education","lineage":["https://openalex.org/I154851008"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"S. Dasgupta","raw_affiliation_strings":["Microelectronics & VLSI Group, Electronics & Communication Engineering Department Indian Institute of Technology Roorkee, Roorkee, Uttarakhand, India","Electron. & Commun. Eng. Dept., Indian Inst. of Technol., Roorkee, Roorkee, India"],"affiliations":[{"raw_affiliation_string":"Microelectronics & VLSI Group, Electronics & Communication Engineering Department Indian Institute of Technology Roorkee, Roorkee, Uttarakhand, India","institution_ids":["https://openalex.org/I154851008"]},{"raw_affiliation_string":"Electron. & Commun. Eng. Dept., Indian Inst. of Technol., Roorkee, Roorkee, India","institution_ids":["https://openalex.org/I154851008"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5056007806"],"corresponding_institution_ids":["https://openalex.org/I154851008"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":7,"citation_normalized_percentile":{"value":0.0921807,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"6"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.718799889087677},{"id":"https://openalex.org/keywords/ring-oscillator","display_name":"Ring oscillator","score":0.7030077576637268},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6999056339263916},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.630434513092041},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6246200799942017},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5845755338668823},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5138723850250244},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.47139957547187805},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.470726877450943},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.4260501265525818},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.35422253608703613},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.179107666015625},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.17484048008918762},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.14863649010658264},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.07137131690979004}],"concepts":[{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.718799889087677},{"id":"https://openalex.org/C104111718","wikidata":"https://www.wikidata.org/wiki/Q2153973","display_name":"Ring oscillator","level":3,"score":0.7030077576637268},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6999056339263916},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.630434513092041},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6246200799942017},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5845755338668823},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5138723850250244},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.47139957547187805},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.470726877450943},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.4260501265525818},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.35422253608703613},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.179107666015625},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.17484048008918762},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.14863649010658264},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.07137131690979004},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/isvdat.2014.6881054","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isvdat.2014.6881054","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"18th International Symposium on VLSI Design and Test","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.8100000023841858,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":16,"referenced_works":["https://openalex.org/W1970691317","https://openalex.org/W1982240498","https://openalex.org/W2002612140","https://openalex.org/W2030684844","https://openalex.org/W2054284160","https://openalex.org/W2071003649","https://openalex.org/W2106998413","https://openalex.org/W2111555482","https://openalex.org/W2114072633","https://openalex.org/W2119378720","https://openalex.org/W2135818056","https://openalex.org/W2144693175","https://openalex.org/W2159980332","https://openalex.org/W2235528636","https://openalex.org/W2237575598","https://openalex.org/W2298798742"],"related_works":["https://openalex.org/W3151633427","https://openalex.org/W2212894501","https://openalex.org/W2793465010","https://openalex.org/W3024050170","https://openalex.org/W4293253840","https://openalex.org/W4378977321","https://openalex.org/W1976168335","https://openalex.org/W4308090481","https://openalex.org/W3211992815","https://openalex.org/W179354024"],"abstract_inverted_index":{"In":[0],"this":[1],"paper,":[2],"we":[3],"present":[4],"the":[5,48,60,89,94,116,119],"impact":[6],"of":[7,85,96,100,118],"spacer":[8,42,111,114],"dielectric":[9],"on":[10],"a":[11],"junctionless":[12],"transistor":[13],"(JLT)":[14],"FinFET":[15],"based":[16],"circuit/SRAM":[17],"memory":[18],"cell.":[19],"JLT":[20,77,90],"FinFETs":[21],"with":[22,79,107],"high-k":[23,110],"spacers":[24,80],"provide":[25],"excellent":[26],"electrostatic":[27],"integrity":[28],"as":[29,31],"well":[30],"reduction":[32],"in":[33,47,51,98,109],"short":[34],"channel":[35,45],"effects":[36],"(SCEs).":[37],"Fringing":[38],"electric":[39],"field":[40],"through":[41],"increases":[43],"effective":[44],"length":[46],"OFF-state,":[49],"whereas":[50],"ON-state":[52],"it":[53],"is":[54,57],"unaffected.":[55],"It":[56],"observed":[58],"that":[59],"drive":[61],"current,":[62,64],"leakage":[63,105],"drain":[65],"induced":[66],"barrier":[67],"lowering":[68],"(DIBL)":[69],"and":[70,104,125],"sub-threshold":[71],"swing":[72],"(SS)":[73],"are":[74,129],"improved.":[75],"The":[76],"structure":[78],"leads":[81],"to":[82],"better":[83],"noise-margins":[84],"CMOS":[86],"inverter.":[87],"Moreover,":[88],"architecture":[91],"also":[92],"improves":[93],"performance":[95],"SRAM":[97,126],"terms":[99],"static-noise":[101],"margins":[102],"(SNMs)":[103],"power":[106],"increase":[108,115],"value.":[112],"High-k":[113],"capacitance":[117],"device,":[120],"so":[121],"ring":[122],"oscillator":[123],"delay":[124],"access":[127],"times":[128],"degraded.":[130]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2022,"cited_by_count":3},{"year":2021,"cited_by_count":2},{"year":2018,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}